Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (167162) > Seite 1214 nach 2787
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| STTH810FP | STMicroelectronics |
 Category: THT universal diodesDescription: Diode: rectifying Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STTH810G-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STTH810GY-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STTH812D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns Type of diode: rectifying Semiconductor structure: single diode Max. off-state voltage: 1.2kV Load current: 8A Case: TO220AC Max. forward voltage: 1.25V Max. forward impulse current: 80A Mounting: THT Features of semiconductor devices: ultrafast switching Kind of package: tube Reverse recovery time: 50ns Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4058 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH812DI | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220ACIns Max. forward voltage: 1.25V Max. forward impulse current: 80A Kind of package: tube Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH812FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220FPAC Max. forward voltage: 1.25V Max. forward impulse current: 80A Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 379 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH812G-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 1.25V Max. forward impulse current: 80A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STTH8L06D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 200uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220AC Max. forward voltage: 1.3V Leakage current: 0.2mA Heatsink thickness: 1.23...1.32mm Reverse recovery time: 105ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8L06FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220FPAC; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220FPAC Max. forward voltage: 0.85V Reverse recovery time: 75ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 381 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8L06G-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 75ns; D2PAK; Ufmax: 0.85V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 120A Case: D2PAK Max. forward voltage: 0.85V Reverse recovery time: 75ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STTH8R04D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220AC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220AC Max. forward voltage: 0.9V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 110 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R04DI | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220ACIns; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 120A Case: TO220ACIns Max. forward voltage: 0.9V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R04G-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 8A; 25ns; D2PAK; Ufmax: 0.9V; Ifsm: 120A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 120A Case: D2PAK Max. forward voltage: 0.9V Reverse recovery time: 25ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STTH8R06D | STMicroelectronics |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns Type of diode: rectifying Semiconductor structure: single diode Max. off-state voltage: 0.6kV Load current: 8A Case: TO220AC Max. forward voltage: 1.4V Max. forward impulse current: 80A Mounting: THT Max. load current: 30A Features of semiconductor devices: ultrafast switching Kind of package: tube Reverse recovery time: 25ns Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 496 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06DIRG | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220ACIns Max. forward voltage: 1.4V Max. forward impulse current: 80A Kind of package: tube Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220FPAC Max. forward voltage: 1.4V Max. forward impulse current: 80A Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 99 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8R06G-TR | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 1.4V Max. forward impulse current: 80A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1011 Stücke: Lieferzeit 7-14 Tag (e) |
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| STTH8S06D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220AC Max. forward voltage: 3.4V Leakage current: 20µA Reverse recovery time: 12ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STTH8S06FP | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220FPAC; 18ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 60A Case: TO220FPAC Max. forward voltage: 3.4V Leakage current: 0.2mA Reverse recovery time: 18ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STTH8S12D | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns Mounting: THT Max. off-state voltage: 1.2kV Max. forward voltage: 1.75V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 32ns Max. forward impulse current: 70A Kind of package: tube Type of diode: rectifying Features of semiconductor devices: ultrafast switching Heatsink thickness: 1.23...1.32mm Case: TO220AC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 234 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8ST06DI | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; TO220ACIns; 13ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Max. load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 55A Case: TO220ACIns Max. forward voltage: 2.5V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 13ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 84 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH8T06DI | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 15ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Max. load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 80A Case: TO220ACIns Max. forward voltage: 2.05V Heatsink thickness: 1.23...1.32mm Reverse recovery time: 15ns Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STTH9012TV1 | STMicroelectronics |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 45A x2 Case: ISOTOP Max. forward voltage: 1.2V Max. forward impulse current: 420A Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw Reverse recovery time: 50ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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STTH9012TV2 | STMicroelectronics |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw Mechanical mounting: screw Max. off-state voltage: 1.2kV Case: ISOTOP Electrical mounting: screw Type of module: diode Max. load current: 150A Max. forward voltage: 1.2V Load current: 45A x2 Semiconductor structure: double independent Reverse recovery time: 50ns Max. forward impulse current: 420A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STTN6050H-12M1Y | STMicroelectronics |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 60A; 38A; Igt: 50mA; ACEPACK SMIT; SMD; tape Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 60A Load current: 38A Gate current: 50mA Case: ACEPACK SMIT Mounting: SMD Kind of package: tape Max. forward impulse current: 600A Semiconductor structure: double series Features of semiconductor devices: high temperature Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STTS22HTR | STMicroelectronics |
Category: Temperature transducers Description: IC: temperature sensor; -40÷125°C; uDFN6; SMD; Accur: ±1°C; 16bit Case: uDFN6 Kind of package: reel; tape Temperature measuring range: -40...125°C Temperature measurement accuracy: ±1°C Mounting: SMD Supply voltage: 1.5...3.6V Type of integrated circuit: temperature sensor Interface: I2C; SMBus Converter resolution: 16bit Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STTS75M2F | STMicroelectronics |
Category: Temperature transducers Description: IC: temperature sensor; -55÷125°C; SO8; SMD; Interface: I2C,SMBus Case: SO8 Mounting: SMD Temperature measurement accuracy: ±2°C Kind of package: reel; tape Interface: I2C; SMBus Supply voltage: 2.7...5.5V Converter resolution: 11bit Type of integrated circuit: temperature sensor Temperature measuring range: -55...125°C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STU10NM60N | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 147 Stücke: Lieferzeit 7-14 Tag (e) |
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| STU13NM60N | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 25W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STU1HN60K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 600V; 0.76A; 27W; IPAK Mounting: THT Case: IPAK Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: SuperMESH3™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 0.76A On-state resistance: 8Ω Type of transistor: N-MOSFET Power dissipation: 27W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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STU2NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK Mounting: THT Case: IPAK Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1kV Drain current: 1.16A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Power dissipation: 70W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STU3N62K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 1.7A; 45W; IPAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 1.7A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STU4N52K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 525V Drain current: 2A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| STU4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STU6N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STU7N105K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 110W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 110W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STU7N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 60W Case: IPAK Gate-source voltage: ±25V On-state resistance: 1.15Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STU9N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.5A Pulsed drain current: 22A Power dissipation: 60W Case: IPAK Gate-source voltage: ±25V On-state resistance: 780mΩ Mounting: THT Gate charge: 10nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STUSB4500QTR | STMicroelectronics |
Category: USB interfaces - integrated circuits Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 4.1÷22VDC Type of integrated circuit: interface Interface: GPIO; I2C; USB 3.0 Kind of integrated circuit: USB PD controller Supply voltage: 4.1...22V DC Kind of package: reel; tape Case: QFN24 Mounting: SMD Operating temperature: -40...105°C Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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| STUSBCD01BJR | STMicroelectronics |
Category: Integrated circuits - others Description: IC: Supervisor Integrated Circuit; supply voltage monitor; Ch: 1 Type of integrated circuit: Supervisor Integrated Circuit Interface: GPIO Number of channels: 1 Integrated circuit features: USB charger detection Kind of integrated circuit: supply voltage monitor Mounting: SMD Case: flip chip12 Supply voltage: 2.2...4.5V DC Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| STW10N105K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3.78A Pulsed drain current: 24A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STW10N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 5A Pulsed drain current: 32A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW10NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247 Case: TO247 Mounting: THT Kind of package: tube Technology: SuperMesh™ Drain-source voltage: 600V Drain current: 5.7A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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STW10NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW11NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 8.3A Power dissipation: 230W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW11NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.8A Pulsed drain current: 36.8A Power dissipation: 200W Case: TO247 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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STW11NM80 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STW120NF10 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 77A Pulsed drain current: 440A Power dissipation: 312W Case: TO247 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW12N120K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1200V; 7.6A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW12N150K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1500V Drain current: 4A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1600mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW12N170K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 3A; Idm: 10A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3A Pulsed drain current: 10A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW12NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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STW12NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 11A Power dissipation: 230W Case: TO247 Gate-source voltage: ±30V On-state resistance: 880mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 255 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW13N95K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Pulsed drain current: 40A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 8.2A; 350W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 8.2A Power dissipation: 350W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 187 Stücke: Lieferzeit 7-14 Tag (e) |
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STW13NK60Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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STW14NK50Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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STW15N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 7.6A Power dissipation: 170W Case: TO247 Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| STTH810FP |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH810G-TR |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH810GY-TR |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH812D |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Type of diode: rectifying
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Mounting: THT
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 50ns
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220AC; 50ns
Type of diode: rectifying
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Mounting: THT
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 50ns
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4058 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 89+ | 0.81 EUR |
| 133+ | 0.54 EUR |
| 141+ | 0.51 EUR |
| 5000+ | 0.5 EUR |
| 10000+ | 0.49 EUR |
| STTH812DI |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.79 EUR |
| 45+ | 1.62 EUR |
| 50+ | 1.43 EUR |
| 54+ | 1.33 EUR |
| 57+ | 1.26 EUR |
| 250+ | 1.22 EUR |
| STTH812FP |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 379 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.03 EUR |
| 80+ | 0.9 EUR |
| 90+ | 0.8 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| STTH812G-TR |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH8L06D |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 200uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 1.3V
Leakage current: 0.2mA
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 105ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 200uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 1.3V
Leakage current: 0.2mA
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 105ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 62+ | 1.16 EUR |
| 69+ | 1.04 EUR |
| 91+ | 0.79 EUR |
| 96+ | 0.75 EUR |
| STTH8L06FP |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220FPAC; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FPAC
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 120A; TO220FPAC; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220FPAC
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 381 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.2 EUR |
| 67+ | 1.08 EUR |
| 75+ | 0.96 EUR |
| 89+ | 0.81 EUR |
| 94+ | 0.76 EUR |
| STTH8L06G-TR |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 75ns; D2PAK; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 75ns; D2PAK; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.85V
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH8R04D |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 74+ | 0.97 EUR |
| 84+ | 0.86 EUR |
| 97+ | 0.74 EUR |
| 102+ | 0.7 EUR |
| STTH8R04DI |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220ACIns
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8A; tube; Ifsm: 120A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220ACIns
Max. forward voltage: 0.9V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 42+ | 1.7 EUR |
| 250+ | 1.14 EUR |
| STTH8R04G-TR |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 25ns; D2PAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.9V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 8A; 25ns; D2PAK; Ufmax: 0.9V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 120A
Case: D2PAK
Max. forward voltage: 0.9V
Reverse recovery time: 25ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH8R06D | |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Type of diode: rectifying
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Mounting: THT
Max. load current: 30A
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 25ns
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Type of diode: rectifying
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Mounting: THT
Max. load current: 30A
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Reverse recovery time: 25ns
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.57 EUR |
| 65+ | 1.12 EUR |
| 85+ | 0.85 EUR |
| 106+ | 0.68 EUR |
| 110+ | 0.65 EUR |
| 112+ | 0.64 EUR |
| STTH8R06DIRG |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 10.21 EUR |
| 10+ | 7.15 EUR |
| 40+ | 1.79 EUR |
| 50+ | 1.43 EUR |
| STTH8R06FP |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220FPAC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 99 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 70+ | 1.02 EUR |
| 99+ | 0.73 EUR |
| 1000+ | 0.61 EUR |
| STTH8R06G-TR |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1011 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 63+ | 1.15 EUR |
| 99+ | 0.73 EUR |
| 104+ | 0.69 EUR |
| 1000+ | 0.66 EUR |
| STTH8S06D |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Leakage current: 20µA
Reverse recovery time: 12ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220AC; Ir: 20uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220AC
Max. forward voltage: 3.4V
Leakage current: 20µA
Reverse recovery time: 12ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH8S06FP |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220FPAC; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220FPAC
Max. forward voltage: 3.4V
Leakage current: 0.2mA
Reverse recovery time: 18ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; TO220FPAC; 18ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 60A
Case: TO220FPAC
Max. forward voltage: 3.4V
Leakage current: 0.2mA
Reverse recovery time: 18ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTH8S12D |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 32ns
Max. forward impulse current: 70A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Case: TO220AC
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Mounting: THT
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.75V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 32ns
Max. forward impulse current: 70A
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Case: TO220AC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 76+ | 0.94 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| 500+ | 0.63 EUR |
| STTH8ST06DI |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Max. load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: TO220ACIns
Max. forward voltage: 2.5V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; TO220ACIns; 13ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Max. load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: TO220ACIns
Max. forward voltage: 2.5V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 13ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.55 EUR |
| 30+ | 2.4 EUR |
| 37+ | 1.96 EUR |
| 39+ | 1.85 EUR |
| 250+ | 1.84 EUR |
| STTH8T06DI |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Max. load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 2.05V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 15ns
Anzahl je Verpackung: 1000 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220ACIns; 15ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Max. load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 80A
Case: TO220ACIns
Max. forward voltage: 2.05V
Heatsink thickness: 1.23...1.32mm
Reverse recovery time: 15ns
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| STTH9012TV1 | |
|
Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 45A x2
Case: ISOTOP
Max. forward voltage: 1.2V
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 45A x2
Case: ISOTOP
Max. forward voltage: 1.2V
Max. forward impulse current: 420A
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 33.55 EUR |
| STTH9012TV2 | |
|
Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: ISOTOP
Electrical mounting: screw
Type of module: diode
Max. load current: 150A
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 420A
Anzahl je Verpackung: 1 Stücke
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 45Ax2; ISOTOP; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: ISOTOP
Electrical mounting: screw
Type of module: diode
Max. load current: 150A
Max. forward voltage: 1.2V
Load current: 45A x2
Semiconductor structure: double independent
Reverse recovery time: 50ns
Max. forward impulse current: 420A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTN6050H-12M1Y |
|
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 60A; 38A; Igt: 50mA; ACEPACK SMIT; SMD; tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 60A
Load current: 38A
Gate current: 50mA
Case: ACEPACK SMIT
Mounting: SMD
Kind of package: tape
Max. forward impulse current: 600A
Semiconductor structure: double series
Features of semiconductor devices: high temperature
Anzahl je Verpackung: 1 Stücke
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 60A; 38A; Igt: 50mA; ACEPACK SMIT; SMD; tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 60A
Load current: 38A
Gate current: 50mA
Case: ACEPACK SMIT
Mounting: SMD
Kind of package: tape
Max. forward impulse current: 600A
Semiconductor structure: double series
Features of semiconductor devices: high temperature
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTS22HTR |
|
Hersteller: STMicroelectronics
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; uDFN6; SMD; Accur: ±1°C; 16bit
Case: uDFN6
Kind of package: reel; tape
Temperature measuring range: -40...125°C
Temperature measurement accuracy: ±1°C
Mounting: SMD
Supply voltage: 1.5...3.6V
Type of integrated circuit: temperature sensor
Interface: I2C; SMBus
Converter resolution: 16bit
Anzahl je Verpackung: 1 Stücke
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; uDFN6; SMD; Accur: ±1°C; 16bit
Case: uDFN6
Kind of package: reel; tape
Temperature measuring range: -40...125°C
Temperature measurement accuracy: ±1°C
Mounting: SMD
Supply voltage: 1.5...3.6V
Type of integrated circuit: temperature sensor
Interface: I2C; SMBus
Converter resolution: 16bit
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STTS75M2F |
|
Hersteller: STMicroelectronics
Category: Temperature transducers
Description: IC: temperature sensor; -55÷125°C; SO8; SMD; Interface: I2C,SMBus
Case: SO8
Mounting: SMD
Temperature measurement accuracy: ±2°C
Kind of package: reel; tape
Interface: I2C; SMBus
Supply voltage: 2.7...5.5V
Converter resolution: 11bit
Type of integrated circuit: temperature sensor
Temperature measuring range: -55...125°C
Anzahl je Verpackung: 1 Stücke
Category: Temperature transducers
Description: IC: temperature sensor; -55÷125°C; SO8; SMD; Interface: I2C,SMBus
Case: SO8
Mounting: SMD
Temperature measurement accuracy: ±2°C
Kind of package: reel; tape
Interface: I2C; SMBus
Supply voltage: 2.7...5.5V
Converter resolution: 11bit
Type of integrated circuit: temperature sensor
Temperature measuring range: -55...125°C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU10NM60N |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 147 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.19 EUR |
| 68+ | 1.06 EUR |
| 89+ | 0.8 EUR |
| 94+ | 0.76 EUR |
| STU13NM60N |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 25W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU1HN60K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 600V; 0.76A; 27W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.76A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 600V; 0.76A; 27W; IPAK
Mounting: THT
Case: IPAK
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 0.76A
On-state resistance: 8Ω
Type of transistor: N-MOSFET
Power dissipation: 27W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.83 EUR |
| 100+ | 0.72 EUR |
| STU2NK100Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK
Mounting: THT
Case: IPAK
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 1.16A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK
Mounting: THT
Case: IPAK
Features of semiconductor devices: ESD protected gate
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1kV
Drain current: 1.16A
On-state resistance: 8.5Ω
Type of transistor: N-MOSFET
Power dissipation: 70W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU3N62K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 1.7A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 1.7A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 1.7A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 1.7A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU4N52K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 2A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 2A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| 53+ | 1.34 EUR |
| 144+ | 0.5 EUR |
| STU4N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU6N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU7N105K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 110W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 110W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 110W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 110W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU7N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STU9N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.5A
Pulsed drain current: 22A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STUSB4500QTR |
|
Hersteller: STMicroelectronics
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 4.1÷22VDC
Type of integrated circuit: interface
Interface: GPIO; I2C; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 4.1...22V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
Anzahl je Verpackung: 4000 Stücke
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO,I2C,USB 3.0; USB PD controller; 4.1÷22VDC
Type of integrated circuit: interface
Interface: GPIO; I2C; USB 3.0
Kind of integrated circuit: USB PD controller
Supply voltage: 4.1...22V DC
Kind of package: reel; tape
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
| STUSBCD01BJR |
|
Hersteller: STMicroelectronics
Category: Integrated circuits - others
Description: IC: Supervisor Integrated Circuit; supply voltage monitor; Ch: 1
Type of integrated circuit: Supervisor Integrated Circuit
Interface: GPIO
Number of channels: 1
Integrated circuit features: USB charger detection
Kind of integrated circuit: supply voltage monitor
Mounting: SMD
Case: flip chip12
Supply voltage: 2.2...4.5V DC
Anzahl je Verpackung: 5000 Stücke
Category: Integrated circuits - others
Description: IC: Supervisor Integrated Circuit; supply voltage monitor; Ch: 1
Type of integrated circuit: Supervisor Integrated Circuit
Interface: GPIO
Number of channels: 1
Integrated circuit features: USB charger detection
Kind of integrated circuit: supply voltage monitor
Mounting: SMD
Case: flip chip12
Supply voltage: 2.2...4.5V DC
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| STW10N105K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3.78A
Pulsed drain current: 24A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 21.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW10N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW10NK60Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Technology: SuperMesh™
Drain-source voltage: 600V
Drain current: 5.7A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Technology: SuperMesh™
Drain-source voltage: 600V
Drain current: 5.7A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 28+ | 2.56 EUR |
| STW10NK80Z | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW11NK100Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.3A; 230W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.3A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW11NK90Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Pulsed drain current: 36.8A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Pulsed drain current: 36.8A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.93 EUR |
| 21+ | 3.55 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.43 EUR |
| STW11NM80 | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW120NF10 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Pulsed drain current: 440A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Pulsed drain current: 440A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW12N120K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1200V; 7.6A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1200V; 7.6A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW12N150K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1500V
Drain current: 4A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1600mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1500V; 4A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1500V
Drain current: 4A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1600mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 14.59 EUR |
| 7+ | 10.65 EUR |
| 8+ | 10.08 EUR |
| STW12N170K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 3A; Idm: 10A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3A
Pulsed drain current: 10A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.7kV; 3A; Idm: 10A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3A
Pulsed drain current: 10A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STW12NK80Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.6A; 190W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.68 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.04 EUR |
| STW12NK90Z | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 230W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 230W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 880mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 255 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.15 EUR |
| 24+ | 3.02 EUR |
| 26+ | 2.85 EUR |
| STW13N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.11 EUR |
| 25+ | 3.79 EUR |
| STW13N95K3 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.85 EUR |
| 15+ | 4.89 EUR |
| 16+ | 4.62 EUR |
| 300+ | 4.46 EUR |
| STW13NK100Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.2A; 350W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.2A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 8.2A; 350W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 8.2A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 13 EUR |
| 10+ | 7.22 EUR |
| 11+ | 6.84 EUR |
| STW13NK60Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 150W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 10.21 EUR |
| 8+ | 8.94 EUR |
| 21+ | 3.4 EUR |
| STW14NK50Z | |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 150W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.9 EUR |
| 28+ | 2.62 EUR |
| 36+ | 2.02 EUR |
| 38+ | 1.9 EUR |
| STW15N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.42 EUR |
| 13+ | 5.78 EUR |
| 17+ | 4.42 EUR |
| 18+ | 4.18 EUR |
| STW15N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
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