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RBQ10NS65ATL RBQ10NS65ATL Rohm Semiconductor datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Produkt ist nicht verfügbar
RBQ10NS45AFHTL RBQ10NS45AFHTL Rohm Semiconductor rbq10ns45afhtl-e.pdf Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Produkt ist nicht verfügbar
RBQ10NS45AFHTL RBQ10NS45AFHTL Rohm Semiconductor rbq10ns45afhtl-e.pdf Description: DIODE (RECTIFIER FRD) 45V-VRM 45
auf Bestellung 772 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
12+ 1.49 EUR
100+ 1.16 EUR
500+ 0.96 EUR
Mindestbestellmenge: 11
R6015FNJTL R6015FNJTL Rohm Semiconductor datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
R6015FNX R6015FNX Rohm Semiconductor datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
BSM300C12P3E201 BSM300C12P3E201 Rohm Semiconductor datasheet?p=BSM300C12P3E201&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SICFET N-CH 1200V 300A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 1360W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Supplier Device Package: Module
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+1235.71 EUR
SDR10EZPJ511 SDR10EZPJ511 Rohm Semiconductor sdr-e.pdf Description: RES 510 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
Produkt ist nicht verfügbar
SDR10EZPJ511 SDR10EZPJ511 Rohm Semiconductor sdr-e.pdf Description: RES 510 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
auf Bestellung 4628 Stücke:
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44+0.4 EUR
87+ 0.2 EUR
129+ 0.14 EUR
151+ 0.12 EUR
500+ 0.084 EUR
1000+ 0.074 EUR
Mindestbestellmenge: 44
RB521VM-30TE-17 RB521VM-30TE-17 Rohm Semiconductor datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.097 EUR
6000+ 0.09 EUR
9000+ 0.074 EUR
Mindestbestellmenge: 3000
RB521VM-30TE-17 RB521VM-30TE-17 Rohm Semiconductor datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
auf Bestellung 13332 Stücke:
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31+0.58 EUR
45+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 31
RB521CM-40T2R RB521CM-40T2R Rohm Semiconductor rb521cm-40t2r-e.pdf Description: DIODE SCHOTTKY 40V 100MA VMN2M
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.066 EUR
16000+ 0.056 EUR
Mindestbestellmenge: 8000
RB521CM-40T2R RB521CM-40T2R Rohm Semiconductor rb521cm-40t2r-e.pdf Description: DIODE SCHOTTKY 40V 100MA VMN2M
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
50+ 0.36 EUR
100+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.085 EUR
2000+ 0.076 EUR
Mindestbestellmenge: 40
RB521CS-30FHT2RA RB521CS-30FHT2RA Rohm Semiconductor datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.13 EUR
16000+ 0.11 EUR
Mindestbestellmenge: 8000
RB521CS-30FHT2RA RB521CS-30FHT2RA Rohm Semiconductor datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22537 Stücke:
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24+0.74 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.21 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 24
RB521VM-40TE-17 RB521VM-40TE-17 Rohm Semiconductor datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.097 EUR
6000+ 0.09 EUR
9000+ 0.075 EUR
30000+ 0.073 EUR
Mindestbestellmenge: 3000
RB521VM-40TE-17 RB521VM-40TE-17 Rohm Semiconductor datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
auf Bestellung 33256 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
45+ 0.4 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 31
RB078RSM10STFTL1 RB078RSM10STFTL1 Rohm Semiconductor datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RB078RSM10STFTL1 RB078RSM10STFTL1 Rohm Semiconductor datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3365 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
12+ 1.54 EUR
100+ 1.2 EUR
500+ 1.02 EUR
1000+ 0.83 EUR
2000+ 0.78 EUR
Mindestbestellmenge: 10
RB048RSM10STL1 RB048RSM10STL1 Rohm Semiconductor datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 8A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Produkt ist nicht verfügbar
RB048RSM10STL1 RB048RSM10STL1 Rohm Semiconductor datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 8A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
auf Bestellung 3912 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.9 EUR
12+ 1.57 EUR
100+ 1.22 EUR
500+ 1.03 EUR
1000+ 0.84 EUR
2000+ 0.79 EUR
Mindestbestellmenge: 10
RB088RSM10STL1 RB088RSM10STL1 Rohm Semiconductor datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Produkt ist nicht verfügbar
RB088RSM10STL1 RB088RSM10STL1 Rohm Semiconductor datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
11+ 1.72 EUR
100+ 1.34 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
RB078RSM10STL1 RB078RSM10STL1 Rohm Semiconductor datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.64 EUR
Mindestbestellmenge: 4000
RB078RSM10STL1 RB078RSM10STL1 Rohm Semiconductor datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
14+ 1.27 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
2000+ 0.64 EUR
Mindestbestellmenge: 12
RB088RSM10STFTL1 RB088RSM10STFTL1 Rohm Semiconductor datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RB088RSM10STFTL1 RB088RSM10STFTL1 Rohm Semiconductor datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3475 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
10+ 2.06 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
2000+ 1.04 EUR
Mindestbestellmenge: 7
UT6J3TCR UT6J3TCR Rohm Semiconductor Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
SFR10EZPF1001 SFR10EZPF1001 Rohm Semiconductor sfr-e.pdf Description: RES 1 KOHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.035 EUR
10000+ 0.032 EUR
Mindestbestellmenge: 5000
SFR10EZPF1001 SFR10EZPF1001 Rohm Semiconductor sfr-e.pdf Description: RES 1 KOHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1 kOhms
auf Bestellung 18626 Stücke:
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70+ 0.25 EUR
132+ 0.13 EUR
177+ 0.099 EUR
500+ 0.06 EUR
1000+ 0.042 EUR
Mindestbestellmenge: 59
RD3P130SPTL1 RD3P130SPTL1 Rohm Semiconductor datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2500 Stücke:
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RD3P130SPTL1 RD3P130SPTL1 Rohm Semiconductor datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 4741 Stücke:
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500+ 1.63 EUR
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SFR10EZPJ474 SFR10EZPJ474 Rohm Semiconductor sfr-e.pdf Description: RES 470K OHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 470 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.032 EUR
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SFR10EZPJ474 SFR10EZPJ474 Rohm Semiconductor sfr-e.pdf Description: RES 470K OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 470 kOhms
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RB161SS-207HFT2R Rohm Semiconductor Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
BU7233SF-E2 BU7233SF-E2 Rohm Semiconductor datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
auf Bestellung 5000 Stücke:
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2500+0.85 EUR
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Mindestbestellmenge: 2500
BU7233SF-E2 BU7233SF-E2 Rohm Semiconductor datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
auf Bestellung 5000 Stücke:
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9+2.01 EUR
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100+ 1.39 EUR
250+ 1.3 EUR
500+ 1.15 EUR
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DTC114TE3HZGTL DTC114TE3HZGTL Rohm Semiconductor datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3000 Stücke:
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3000+0.14 EUR
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DTC114TE3HZGTL DTC114TE3HZGTL Rohm Semiconductor datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3000 Stücke:
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25+0.72 EUR
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500+ 0.2 EUR
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RGTH80TS65DGC13 RGTH80TS65DGC13 Rohm Semiconductor datasheet?p=RGTH80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
auf Bestellung 593 Stücke:
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2+11.21 EUR
10+ 7.58 EUR
100+ 5.51 EUR
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RGWS80TS65DGC13 RGWS80TS65DGC13 Rohm Semiconductor datasheet?p=RGWS80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
auf Bestellung 600 Stücke:
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3+7.88 EUR
30+ 4.58 EUR
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RGS80TS65DHRC11 RGS80TS65DHRC11 Rohm Semiconductor datasheet?p=RGS80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
auf Bestellung 709 Stücke:
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2+14.36 EUR
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120+ 7.12 EUR
510+ 6.36 EUR
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RGSX5TS65DHRC11 RGSX5TS65DHRC11 Rohm Semiconductor datasheet?p=RGSX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 450 Stücke:
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2+11.88 EUR
30+ 9.48 EUR
120+ 8.79 EUR
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RGWS00TS65DGC13 RGWS00TS65DGC13 Rohm Semiconductor rgws00ts65dgc13-e.pdf Description: IGBT TRNCH FIELD 650V 88A TO247G
Produkt ist nicht verfügbar
RGTH00TS65DGC13 RGTH00TS65DGC13 Rohm Semiconductor datasheet?p=RGTH00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 85A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
auf Bestellung 591 Stücke:
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2+12.28 EUR
10+ 8.34 EUR
100+ 6.1 EUR
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RGWX5TS65DGC11 RGWX5TS65DGC11 Rohm Semiconductor datasheet?p=RGWX5TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/229ns
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 400 Stücke:
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2+10.23 EUR
30+ 6.46 EUR
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RGT80TS65DGC13 RGT80TS65DGC13 Rohm Semiconductor datasheet?p=RGT80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
auf Bestellung 600 Stücke:
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2+13.02 EUR
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100+ 8.89 EUR
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RGT00TS65DGC13 RGT00TS65DGC13 Rohm Semiconductor rgt00ts65dgc13-e.pdf Description: IGBT TRNCH FIELD 650V 85A TO247G
Produkt ist nicht verfügbar
RGTH50TS65DGC13 RGTH50TS65DGC13 Rohm Semiconductor datasheet?p=RGTH50TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 174 W
auf Bestellung 600 Stücke:
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RGT40TS65DGC13 RGT40TS65DGC13 Rohm Semiconductor datasheet?p=RGT40TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
auf Bestellung 600 Stücke:
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2+11.21 EUR
30+ 7.3 EUR
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RGWX5TS65DHRC11 RGWX5TS65DHRC11 Rohm Semiconductor datasheet?p=RGWX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 332 Stücke:
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2+10.05 EUR
10+ 8.61 EUR
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RGW00TS65DHRC11 RGW00TS65DHRC11 Rohm Semiconductor datasheet?p=RGW00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 425 Stücke:
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2+10.23 EUR
10+ 7.01 EUR
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RGW80TS65DHRC11 RGW80TS65DHRC11 Rohm Semiconductor datasheet?p=RGW80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 446 Stücke:
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2+9.35 EUR
10+ 6.37 EUR
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RGT50TS65DGC11 RGT50TS65DGC11 Rohm Semiconductor rgt50ts65d-e.pdf Description: IGBT TRNCH FIELD 650V 48A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
Produkt ist nicht verfügbar
SFR18EZPF1503 SFR18EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.057 EUR
Mindestbestellmenge: 5000
SFR18EZPF1503 SFR18EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
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157+ 0.11 EUR
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BD7281YG-CTR BD7281YG-CTR Rohm Semiconductor datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BD7281YG-CTR BD7281YG-CTR Rohm Semiconductor datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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RS6R035BHTB1 RS6R035BHTB1 Rohm Semiconductor datasheet?p=RS6R035BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Produkt ist nicht verfügbar
RS6R035BHTB1 RS6R035BHTB1 Rohm Semiconductor datasheet?p=RS6R035BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
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LTR100JZPFLR270 LTR100JZPFLR270 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 270 MOhms
Produkt ist nicht verfügbar
RBQ10NS65ATL datasheet?p=RBQ10NS65A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBQ10NS65ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 65V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Produkt ist nicht verfügbar
RBQ10NS45AFHTL rbq10ns45afhtl-e.pdf
RBQ10NS45AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
Produkt ist nicht verfügbar
RBQ10NS45AFHTL rbq10ns45afhtl-e.pdf
RBQ10NS45AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE (RECTIFIER FRD) 45V-VRM 45
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11+1.67 EUR
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R6015FNJTL datasheet?p=R6015FNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A LPT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
R6015FNX datasheet?p=R6015FNX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015FNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
BSM300C12P3E201 datasheet?p=BSM300C12P3E201&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BSM300C12P3E201
Hersteller: Rohm Semiconductor
Description: SICFET N-CH 1200V 300A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Power Dissipation (Max): 1360W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 80mA
Supplier Device Package: Module
Part Status: Active
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
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Anzahl Preis ohne MwSt
1+1235.71 EUR
SDR10EZPJ511 sdr-e.pdf
SDR10EZPJ511
Hersteller: Rohm Semiconductor
Description: RES 510 OHM 5% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
Produkt ist nicht verfügbar
SDR10EZPJ511 sdr-e.pdf
SDR10EZPJ511
Hersteller: Rohm Semiconductor
Description: RES 510 OHM 5% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 510 Ohms
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44+0.4 EUR
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129+ 0.14 EUR
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RB521VM-30TE-17 datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
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3000+0.097 EUR
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RB521VM-30TE-17 datasheet?p=RB521VM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-30TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
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RB521CM-40T2R rb521cm-40t2r-e.pdf
RB521CM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA VMN2M
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8000+0.066 EUR
16000+ 0.056 EUR
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RB521CM-40T2R rb521cm-40t2r-e.pdf
RB521CM-40T2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA VMN2M
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40+0.44 EUR
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RB521CS-30FHT2RA datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CS-30FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
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8000+0.13 EUR
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RB521CS-30FHT2RA datasheet?p=RB521CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521CS-30FHT2RA
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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RB521VM-40TE-17 datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
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RB521VM-40TE-17 datasheet?p=RB521VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB521VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
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RB078RSM10STFTL1 datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RB078RSM10STFTL1 datasheet?p=RB078RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 3365 Stücke:
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10+1.88 EUR
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RB048RSM10STL1 datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB048RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
Produkt ist nicht verfügbar
RB048RSM10STL1 datasheet?p=RB048RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB048RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 8A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.4 µA @ 100 V
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10+1.9 EUR
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RB088RSM10STL1 datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Produkt ist nicht verfügbar
RB088RSM10STL1 datasheet?p=RB088RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.09 EUR
11+ 1.72 EUR
100+ 1.34 EUR
500+ 1.13 EUR
1000+ 0.92 EUR
2000+ 0.87 EUR
Mindestbestellmenge: 9
RB078RSM10STL1 datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.64 EUR
Mindestbestellmenge: 4000
RB078RSM10STL1 datasheet?p=RB078RSM10S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB078RSM10STL1
Hersteller: Rohm Semiconductor
Description: 100V 5A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 1.3 µA @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.27 EUR
100+ 0.99 EUR
500+ 0.84 EUR
1000+ 0.68 EUR
2000+ 0.64 EUR
Mindestbestellmenge: 12
RB088RSM10STFTL1 datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RB088RSM10STFTL1 datasheet?p=RB088RSM10STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB088RSM10STFTL1
Hersteller: Rohm Semiconductor
Description: 100V 10A, TO-277GE, ULTRA LOW IR
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 3.7 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.06 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
2000+ 1.04 EUR
Mindestbestellmenge: 7
UT6J3TCR
UT6J3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.51 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 18
SFR10EZPF1001 sfr-e.pdf
SFR10EZPF1001
Hersteller: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.035 EUR
10000+ 0.032 EUR
Mindestbestellmenge: 5000
SFR10EZPF1001 sfr-e.pdf
SFR10EZPF1001
Hersteller: Rohm Semiconductor
Description: RES 1 KOHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 1 kOhms
auf Bestellung 18626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
70+ 0.25 EUR
132+ 0.13 EUR
177+ 0.099 EUR
500+ 0.06 EUR
1000+ 0.042 EUR
Mindestbestellmenge: 59
RD3P130SPTL1 datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P130SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.32 EUR
Mindestbestellmenge: 2500
RD3P130SPTL1 datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P130SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 4741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.9 EUR
10+ 2.42 EUR
100+ 1.93 EUR
500+ 1.63 EUR
1000+ 1.39 EUR
Mindestbestellmenge: 7
SFR10EZPJ474 sfr-e.pdf
SFR10EZPJ474
Hersteller: Rohm Semiconductor
Description: RES 470K OHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 470 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.032 EUR
Mindestbestellmenge: 5000
SFR10EZPJ474 sfr-e.pdf
SFR10EZPJ474
Hersteller: Rohm Semiconductor
Description: RES 470K OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 470 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.23 EUR
152+ 0.12 EUR
228+ 0.077 EUR
266+ 0.066 EUR
500+ 0.047 EUR
1000+ 0.042 EUR
Mindestbestellmenge: 77
RB161SS-207HFT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
BU7233SF-E2 datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233SF-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.85 EUR
5000+ 0.81 EUR
Mindestbestellmenge: 2500
BU7233SF-E2 datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233SF-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
10+ 1.79 EUR
25+ 1.7 EUR
100+ 1.39 EUR
250+ 1.3 EUR
500+ 1.15 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 9
DTC114TE3HZGTL datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TE3HZGTL
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3000 Stücke:
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Anzahl Preis ohne MwSt
3000+0.14 EUR
Mindestbestellmenge: 3000
DTC114TE3HZGTL datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TE3HZGTL
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
33+ 0.54 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 25
RGTH80TS65DGC13 datasheet?p=RGTH80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.21 EUR
10+ 7.58 EUR
100+ 5.51 EUR
Mindestbestellmenge: 2
RGWS80TS65DGC13 datasheet?p=RGWS80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWS80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.88 EUR
30+ 4.58 EUR
Mindestbestellmenge: 3
RGS80TS65DHRC11 datasheet?p=RGS80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
auf Bestellung 709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.36 EUR
30+ 8.43 EUR
120+ 7.12 EUR
510+ 6.36 EUR
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RGSX5TS65DHRC11 datasheet?p=RGSX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.88 EUR
30+ 9.48 EUR
120+ 8.79 EUR
Mindestbestellmenge: 2
RGWS00TS65DGC13 rgws00ts65dgc13-e.pdf
RGWS00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247G
Produkt ist nicht verfügbar
RGTH00TS65DGC13 datasheet?p=RGTH00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
auf Bestellung 591 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.28 EUR
10+ 8.34 EUR
100+ 6.1 EUR
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RGWX5TS65DGC11 datasheet?p=RGWX5TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/229ns
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.23 EUR
30+ 6.46 EUR
Mindestbestellmenge: 2
RGT80TS65DGC13 datasheet?p=RGT80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
auf Bestellung 600 Stücke:
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Anzahl Preis ohne MwSt
2+13.02 EUR
10+ 9.05 EUR
100+ 8.89 EUR
Mindestbestellmenge: 2
RGT00TS65DGC13 rgt00ts65dgc13-e.pdf
RGT00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Produkt ist nicht verfügbar
RGTH50TS65DGC13 datasheet?p=RGTH50TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH50TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 174 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.11 EUR
10+ 4.78 EUR
100+ 4 EUR
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RGT40TS65DGC13 datasheet?p=RGT40TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT40TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.21 EUR
30+ 7.3 EUR
Mindestbestellmenge: 2
RGWX5TS65DHRC11 datasheet?p=RGWX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 332 Stücke:
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Anzahl Preis ohne MwSt
2+10.05 EUR
10+ 8.61 EUR
Mindestbestellmenge: 2
RGW00TS65DHRC11 datasheet?p=RGW00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 425 Stücke:
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2+10.23 EUR
10+ 7.01 EUR
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RGW80TS65DHRC11 datasheet?p=RGW80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.35 EUR
10+ 6.37 EUR
Mindestbestellmenge: 2
RGT50TS65DGC11 rgt50ts65d-e.pdf
RGT50TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 48A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
Produkt ist nicht verfügbar
SFR18EZPF1503 sfr-e.pdf
SFR18EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
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Anzahl Preis ohne MwSt
5000+0.057 EUR
Mindestbestellmenge: 5000
SFR18EZPF1503 sfr-e.pdf
SFR18EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 9950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
93+ 0.19 EUR
135+ 0.13 EUR
157+ 0.11 EUR
500+ 0.083 EUR
1000+ 0.073 EUR
Mindestbestellmenge: 50
BD7281YG-CTR datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7281YG-CTR
Hersteller: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
BD7281YG-CTR datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7281YG-CTR
Hersteller: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.01 EUR
10+ 2.59 EUR
25+ 2.21 EUR
100+ 1.79 EUR
250+ 1.58 EUR
500+ 1.46 EUR
1000+ 1.35 EUR
Mindestbestellmenge: 5
RS6R035BHTB1 datasheet?p=RS6R035BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS6R035BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Produkt ist nicht verfügbar
RS6R035BHTB1 datasheet?p=RS6R035BH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS6R035BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.21 EUR
10+ 3.5 EUR
100+ 2.78 EUR
500+ 2.36 EUR
1000+ 2 EUR
Mindestbestellmenge: 5
LTR100JZPFLR270 ltr-low-e.pdf
LTR100JZPFLR270
Hersteller: Rohm Semiconductor
Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 270 MOhms
Produkt ist nicht verfügbar
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