RGW00TS65DHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.99 EUR |
10+ | 7.71 EUR |
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Technische Details RGW00TS65DHRC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 48ns/186ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 141 nC, Part Status: Active, Current - Collector (Ic) (Max): 96 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 254 W.
Weitere Produktangebote RGW00TS65DHRC11 nach Preis ab 6.95 EUR bis 9.05 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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RGW00TS65DHRC11 | Hersteller : ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive. |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TS65DHRC11 | Hersteller : ROHM |
Description: ROHM - RGW00TS65DHRC11 - IGBT, 96 A, 1.5 V, 254 W, 650 V, TO-247N, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V usEccn: EAR99 euEccn: NLR Verlustleistung: 254W Bauform - Transistor: TO-247N Anzahl der Pins: 3Pins Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 96A SVHC: Lead (23-Jan-2024) |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |