RGWS80TS65DGC13 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.88 EUR |
| 30+ | 4.58 EUR |
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Technische Details RGWS80TS65DGC13 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247G, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/114ns, Switching Energy: 700µJ (on), 660µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 83 nC, Current - Collector (Ic) (Max): 71 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 202 W.
Weitere Produktangebote RGWS80TS65DGC13 nach Preis ab 4.95 EUR bis 7.99 EUR
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RGWS80TS65DGC13 | Hersteller : ROHM Semiconductor |
IGBTs TO247 650V 40A TRNCH |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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