| Foto | Bezeichnung | Hersteller | Beschreibung |
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NSVMUN5312DW1T2G | onsemi |
 Description: TRANS NPN/PNP 50V BIPO SC88-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NSVMUN5316DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVR0240HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVR0340HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVR05F40NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 500MA 2DSN Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 35pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: 2-DSN (1x0.6), (0402) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1625000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVRB751V40T1G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V Qualification: AEC-Q101 |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLUS3C18PZTAG | onsemi |
Description: MOSFET P-CH 12V 4.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V |
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NTLUS3C18PZTBG | onsemi |
Description: MOSFET P-CH 12V 4.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V |
Produkt ist nicht verfügbar |
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NTMFD4C85NT1G | onsemi |
Description: MOSFET 2N-CH 30V 15.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
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NTMFD4C86NT1G | onsemi |
Description: MOSFET 2N-CH 30V 11.3A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NTMFD4C87NT1G | onsemi |
Description: MOSFET 2N-CH 30V 11.7A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |
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NTMFD4C88NT1G | onsemi |
Description: MOSFET 2N-CH 30V 11.7A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |
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| NTMFS4962NFT1G | onsemi | Description: MOSFET N-CH 30V SO8FL |
Produkt ist nicht verfügbar |
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NTMFS4982NFT1G | onsemi |
Description: MOSFET N-CH 30V 26.5A/207A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4C01NT1G | onsemi |
Description: MOSFET N-CH 30V 47A/303A 5DFN |
Produkt ist nicht verfügbar |
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NTMFS4C03NT1G | onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C05NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 11.9A/78A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4C06NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 11A/69A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4C09NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 9A/52A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4C10NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 8.2A/46A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFS4H01NFT1G | onsemi |
Description: MOSFET N-CH 25V 54A/334A 5DFN |
Produkt ist nicht verfügbar |
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NTMFS4H02NFT1G | onsemi |
Description: MOSFET N-CH 25V 37A/193A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 3.13W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTMFS5C404NLT1G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5105PT1G | onsemi |
Description: MOSFET P-CH 60V 196MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 196mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V Power Dissipation (Max): 347mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V |
auf Bestellung 351000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTS10100EMFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
Produkt ist nicht verfügbar |
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NTS10100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
Produkt ist nicht verfügbar |
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NTS10120EMFST1G | onsemi |
Description: DIODE SCHOTTKY 120V 10A 5DFN |
Produkt ist nicht verfügbar |
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NTS10120MFST1G | onsemi |
Description: DIODE SCHOTTKY 120V 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 120 V |
Produkt ist nicht verfügbar |
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NTS12100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 12A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A Current - Reverse Leakage @ Vr: 55 µA @ 100 V |
Produkt ist nicht verfügbar |
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NTZD3155CT1H | onsemi |
Description: MOSFET N/P-CH 20V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NTZS3151PT1H | onsemi |
Description: MOSFET P-CH 20V 860MA SOT563-6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 170mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V |
Produkt ist nicht verfügbar |
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NVGS5120PT1G | onsemi |
Description: MOSFET P-CH 60V 1.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 585000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS4C03NT1G | onsemi |
Description: MOSFET N-CH 30V 31.4A/143A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.71W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V Qualification: AEC-Q101 |
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NVMFS5C404NLT1G | onsemi |
Description: MOSFET N-CH 40V 49A/352A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
Produkt ist nicht verfügbar |
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NVMFS5C404NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 49A/352A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
Produkt ist nicht verfügbar |
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NVMFS5C410NLT1G | onsemi |
Description: MOSFET N-CH 40V 48A/315A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Qualification: AEC-Q101 |
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NVMFS5C410NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 48A/315A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFS5C612NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 36A/235A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVT211DMTR2G | onsemi |
Description: SENSOR DIGITAL -40C-125C 8WDFN Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Output Type: I2C/SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.8V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-WDFN (2x2) Test Condition: 0°C ~ 70°C (-20°C ~ 110°C) Accuracy - Highest (Lowest): ±1°C (±2.5°C) Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
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NVTFS4C10NWFTAG | onsemi |
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
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PCA9306AMUTCG | onsemi |
Description: IC TRNSLTR BIDIRECTIONAL 8UQFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-UFQFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: 8-UQFN (1.6x1.6) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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PCA9306FMUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: 8-UDFN (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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PCA9617ADMR2G | onsemi |
Description: IC REPEATER I2C BUS MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Number of Channels: 1 Mounting Type: Surface Mount Output: 2-Wire Bus Type: Buffer, ReDriver Input: 2-Wire Bus Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2.7V ~ 5.5V Applications: I2C Current - Supply: 8µA Supplier Device Package: 8-MSOP Part Status: Not For New Designs Capacitance - Input: 10 pF |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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PCS3I8504AG-08CR | onsemi |
Description: IC CLOCK PEAK EMI GP 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Mounting Type: Surface Mount Output: Clock Frequency - Max: 50MHz Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:1 Differential - Input:Output: No/No Supplier Device Package: 8-WDFN (2x2) PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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SBSP52T1G | onsemi |
Description: TRANS NPN DARL 80V 1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Qualification: AEC-Q101 |
auf Bestellung 6900 Stücke: Lieferzeit 10-14 Tag (e) |
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SC431AVSNT1G | onsemi |
Description: IC VREF SHUNT ADJ 1% SOT23-3 Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: SOT-23-3 (TO-236) Voltage - Output (Min/Fixed): 2.5V Grade: Automotive Part Status: Active Current - Cathode: 100 mA Current - Output: 40 µA Voltage - Output (Max): 36 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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SCM1293A-04SO | onsemi |
Description: TVS DIODE SC74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C Applications: DVI, HDMI Capacitance @ Frequency: 2pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Supplier Device Package: SC-74 Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 9.9V (Typ) Power Line Protection: Yes Part Status: Active |
auf Bestellung 63000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBFJ177LT1G | onsemi |
Description: JFET P-CH 30V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Power - Max: 225 mW Resistance - RDS(On): 300 Ohms Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMMBFJ309LT1G | onsemi |
Description: RF MOSFET JFET 25V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Current Rating (Amps): 30mA Mounting Type: Surface Mount Configuration: N-Channel Technology: JFET Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Voltage - Rated: 25 V Qualification: AEC-Q101 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBT2369ALT1G | onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 225 mW |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBT2369LT1G | onsemi |
Description: TRANS NPN 15V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
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| SNUF2042XV6T1G | onsemi |
Description: FILTER RC(PI) 22 OHM/42PF ESD Packaging: Tape & Reel (TR) Type: Low Pass Operating Temperature: -55°C ~ 125°C Values: R = 22Ohms, C = 42pF (Total) Filter Order: 2nd Technology: RC (Pi) Resistance - Channel (Ohms): 22 ESD Protection: Yes Number of Channels: 2 |
Produkt ist nicht verfügbar |
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SPZT651T1G | onsemi |
Description: TRANS NPN 60V 2A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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SPZT751T1G | onsemi |
Description: TRANS PNP 60V 2A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 47000 Stücke: Lieferzeit 10-14 Tag (e) |
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STGD1100LT1G | onsemi |
Description: IC PWR DRIVER P-CHAN 1:1 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 40mOhm Voltage - Load: 1.8V ~ 8V Current - Output (Max): 3.3A Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP |
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SZBZX84B3V3LT1G | onsemi |
Description: DIODE ZENER 3.3V 250MW SOT23-3 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZCM1214A-01SO | onsemi |
Description: TVS DIODE 7VWM 11.3VC SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: Ethernet, RF Antenna Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 11.3V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SZESD5B5.0ST1G | onsemi |
Description: TVS DIODE 5VWM SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-523 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power - Peak Pulse: 50W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZESD5Z3.3T1G | onsemi |
Description: TVS DIODE 3.3VWM 14.1VC SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-523 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 14.1V Power - Peak Pulse: 158W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZESD8351HT1G | onsemi |
Description: TVS DIODE 3.3VWM 11.2VC SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 11.2V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
| NSVMUN5312DW1T2G |
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Hersteller: onsemi
Description: TRANS NPN/PNP 50V BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS NPN/PNP 50V BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| NSVMUN5316DW1T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.087 EUR |
| 6000+ | 0.081 EUR |
| 9000+ | 0.067 EUR |
| 30000+ | 0.066 EUR |
| 75000+ | 0.059 EUR |
| NSVR0240HT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.077 EUR |
| NSVR0340HT1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
| NSVR05F40NXT5G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1625000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.18 EUR |
| 10000+ | 0.16 EUR |
| 50000+ | 0.15 EUR |
| NSVRB751V40T1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 30MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.08 EUR |
| 6000+ | 0.074 EUR |
| 9000+ | 0.061 EUR |
| 30000+ | 0.06 EUR |
| NTLUS3C18PZTAG |
|
Hersteller: onsemi
Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Produkt ist nicht verfügbar
| NTLUS3C18PZTBG |
|
Hersteller: onsemi
Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Description: MOSFET P-CH 12V 4.4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Produkt ist nicht verfügbar
| NTMFD4C85NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
| NTMFD4C86NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Produkt ist nicht verfügbar
| NTMFD4C87NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
| NTMFD4C88NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
| NTMFS4982NFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Produkt ist nicht verfügbar
| NTMFS4C01NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 47A/303A 5DFN
Description: MOSFET N-CH 30V 47A/303A 5DFN
Produkt ist nicht verfügbar
| NTMFS4C03NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.85 EUR |
| NTMFS4C05NT1G-001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Description: MOSFET N-CH 30V 11.9A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Produkt ist nicht verfügbar
| NTMFS4C06NT1G-001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Produkt ist nicht verfügbar
| NTMFS4C09NT1G-001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Produkt ist nicht verfügbar
| NTMFS4C10NT1G-001 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/46A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A/46A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Produkt ist nicht verfügbar
| NTMFS4H01NFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
Description: MOSFET N-CH 25V 54A/334A 5DFN
Produkt ist nicht verfügbar
| NTMFS4H02NFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 37A/193A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V
Description: MOSFET N-CH 25V 37A/193A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V
Produkt ist nicht verfügbar
| NTMFS5C404NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 5.4 EUR |
| 3000+ | 5.08 EUR |
| NTR5105PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 196MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 347mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
Description: MOSFET P-CH 60V 196MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 347mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
auf Bestellung 351000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.099 EUR |
| 9000+ | 0.086 EUR |
| 30000+ | 0.084 EUR |
| 75000+ | 0.07 EUR |
| 150000+ | 0.068 EUR |
| NTS10100EMFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Produkt ist nicht verfügbar
| NTS10100MFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Produkt ist nicht verfügbar
| NTS10120EMFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Description: DIODE SCHOTTKY 120V 10A 5DFN
Produkt ist nicht verfügbar
| NTS10120MFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Produkt ist nicht verfügbar
| NTS12100MFST1G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Produkt ist nicht verfügbar
| NTZD3155CT1H |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
Produkt ist nicht verfügbar
| NTZS3151PT1H |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 860MA SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 170mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
Description: MOSFET P-CH 20V 860MA SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 170mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
Produkt ist nicht verfügbar
| NVGS5120PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 585000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.57 EUR |
| 6000+ | 0.54 EUR |
| 9000+ | 0.51 EUR |
| NVMFS4C03NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 31.4A/143A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.71W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 31.4A/143A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.71W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| NVMFS5C404NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Produkt ist nicht verfügbar
| NVMFS5C404NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Produkt ist nicht verfügbar
| NVMFS5C410NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| NVMFS5C410NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| NVMFS5C612NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| NVT211DMTR2G |
|
Hersteller: onsemi
Description: SENSOR DIGITAL -40C-125C 8WDFN
Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.8V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 8 b
Supplier Device Package: 8-WDFN (2x2)
Test Condition: 0°C ~ 70°C (-20°C ~ 110°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR DIGITAL -40C-125C 8WDFN
Features: One-Shot, Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.8V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 8 b
Supplier Device Package: 8-WDFN (2x2)
Test Condition: 0°C ~ 70°C (-20°C ~ 110°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| NVTFS4C10NWFTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| PCA9306AMUTCG |
|
Hersteller: onsemi
Description: IC TRNSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UQFN (1.6x1.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRNSLTR BIDIRECTIONAL 8UQFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UQFN (1.6x1.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
| PCA9306FMUTAG |
|
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
| PCA9617ADMR2G |
|
Hersteller: onsemi
Description: IC REPEATER I2C BUS MICRO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: I2C
Current - Supply: 8µA
Supplier Device Package: 8-MSOP
Part Status: Not For New Designs
Capacitance - Input: 10 pF
Description: IC REPEATER I2C BUS MICRO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 1
Mounting Type: Surface Mount
Output: 2-Wire Bus
Type: Buffer, ReDriver
Input: 2-Wire Bus
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Applications: I2C
Current - Supply: 8µA
Supplier Device Package: 8-MSOP
Part Status: Not For New Designs
Capacitance - Input: 10 pF
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.88 EUR |
| 8000+ | 0.84 EUR |
| 12000+ | 0.82 EUR |
| PCS3I8504AG-08CR |
|
Hersteller: onsemi
Description: IC CLOCK PEAK EMI GP 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 50MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-WDFN (2x2)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK PEAK EMI GP 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 50MHz
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-WDFN (2x2)
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| SBSP52T1G |
|
Hersteller: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: AEC-Q101
Description: TRANS NPN DARL 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Qualification: AEC-Q101
auf Bestellung 6900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.59 EUR |
| 2000+ | 0.53 EUR |
| 5000+ | 0.5 EUR |
| SC431AVSNT1G |
|
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 1% SOT23-3
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Part Status: Active
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
Qualification: AEC-Q100
Description: IC VREF SHUNT ADJ 1% SOT23-3
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Part Status: Active
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
| SCM1293A-04SO |
|
Hersteller: onsemi
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C
Applications: DVI, HDMI
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Supplier Device Package: SC-74
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Active
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.083 EUR |
| 30000+ | 0.081 EUR |
| SMMBFJ177LT1G |
|
Hersteller: onsemi
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Qualification: AEC-Q101
Description: JFET P-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 225 mW
Resistance - RDS(On): 300 Ohms
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| SMMBFJ309LT1G |
|
Hersteller: onsemi
Description: RF MOSFET JFET 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Voltage - Rated: 25 V
Qualification: AEC-Q101
Description: RF MOSFET JFET 25V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Voltage - Rated: 25 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 15000+ | 0.19 EUR |
| SMMBT2369ALT1G |
|
Hersteller: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.095 EUR |
| 6000+ | 0.094 EUR |
| SMMBT2369LT1G |
|
Hersteller: onsemi
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Description: TRANS NPN 15V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
| SNUF2042XV6T1G |
Hersteller: onsemi
Description: FILTER RC(PI) 22 OHM/42PF ESD
Packaging: Tape & Reel (TR)
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Filter Order: 2nd
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 22 OHM/42PF ESD
Packaging: Tape & Reel (TR)
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Filter Order: 2nd
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Number of Channels: 2
Produkt ist nicht verfügbar
| SPZT651T1G |
|
Hersteller: onsemi
Description: TRANS NPN 60V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
| SPZT751T1G |
|
Hersteller: onsemi
Description: TRANS PNP 60V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS PNP 60V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 47000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.61 EUR |
| 2000+ | 0.57 EUR |
| 5000+ | 0.54 EUR |
| 10000+ | 0.52 EUR |
| STGD1100LT1G |
Hersteller: onsemi
Description: IC PWR DRIVER P-CHAN 1:1 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Description: IC PWR DRIVER P-CHAN 1:1 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
| SZBZX84B3V3LT1G |
|
Hersteller: onsemi
Description: DIODE ZENER 3.3V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 250MW SOT23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.056 EUR |
| 6000+ | 0.053 EUR |
| 9000+ | 0.045 EUR |
| SZCM1214A-01SO |
|
Hersteller: onsemi
Description: TVS DIODE 7VWM 11.3VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Ethernet, RF Antenna
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 7VWM 11.3VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Ethernet, RF Antenna
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
| SZESD5B5.0ST1G |
|
Hersteller: onsemi
Description: TVS DIODE 5VWM SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5VWM SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-523
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.16 EUR |
| 30000+ | 0.15 EUR |
| SZESD5Z3.3T1G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 14.1VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 158W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.12 EUR |
| 9000+ | 0.1 EUR |
| SZESD8351HT1G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 11.2VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar