NTMFS4H02NFT1G ON Semiconductor

Description: MOSFET N-CH 25V 37A/193A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V, Power Dissipation (Max): 3.13W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V.