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NCP716BSN330T1G ONSEMI ncp716b-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP716B
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Produkt ist nicht verfügbar
NCP716BSN500T1G ONSEMI ncp716b-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; TSOP5; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716B
Mounting: SMD
Case: TSOP5
Tolerance: ±2%
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.955V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT12TBG ONSEMI ncp716-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 1.2V
Output current: 80mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT15TBG ONSEMI ncp716-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 1.5V
Output current: 80mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT18TBG ONSEMI ncp716-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 80mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT30TBG ONSEMI ncp716-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; WDFN6; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 80mA
Voltage drop: 0.58V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT33TBG ONSEMI ncp716-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 80mA
Voltage drop: 0.56V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MTG50TBG ONSEMI ncp716-d.pdf Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; WDFN6; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
MC74AC646DWG MC74AC646DWG ONSEMI MC74AC646-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,register,transceiver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; register; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: AC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.91 EUR
18+ 3.99 EUR
19+ 3.77 EUR
Mindestbestellmenge: 13
MC74ACT646DWG MC74ACT646DWG ONSEMI MC74AC646-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,register,transceiver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; register; transceiver
Number of channels: 8
Technology: TTL
Mounting: SMD
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: ACT
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.21 EUR
18+ 3.99 EUR
19+ 3.78 EUR
Mindestbestellmenge: 14
1N4749A 1N4749A ONSEMI 1N4728A-1N4764A%20N0183%20REV.C.pdf ONSM-S-A0003585147-1.pdf?t.download=true&u=5oefqw 1N47xxA-SERIES.pdf 1N4740A SERIES_O2104.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; DO41; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
Mindestbestellmenge: 239
FQPF8N80C FQPF8N80C ONSEMI FQPF8N80C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; 59W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 59W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
NCP380HMU20AATBG ONSEMI ncp380-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
MBRM120LT3G ONSEMI mbrm120l-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; DO216AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO216AA
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
FDS8447 FDS8447 ONSEMI FDS8447.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 40V
Drain current: 12.8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
49+ 1.49 EUR
67+ 1.08 EUR
71+ 1.02 EUR
500+ 0.99 EUR
Mindestbestellmenge: 30
FDP8447L FDP8447L ONSEMI fdp8447l-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Mounting: THT
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: TO220-3
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
1N4933G ONSEMI 1N4933_7.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
MC74VHC1G03DTT1G MC74VHC1G03DTT1G ONSEMI mc74vhc1g03-d.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
Produkt ist nicht verfügbar
FODM611 ONSEMI FODM611.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 10Mbps; 40kV/μs
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Case: Mini-flat 5pin
Max. off-state voltage: 5V
Turn-on time: 20ns
Turn-off time: 10ns
Output voltage: -500mV...7.5V
Number of channels: 1
Produkt ist nicht verfügbar
FODM611R2 ONSEMI FODM611R2.pdf Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Kind of output: open collector
Insulation voltage: 3.75kV
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Case: Mini-flat 4pin
Number of channels: 1
Produkt ist nicht verfügbar
FDG6335N FDG6335N ONSEMI FDG6335N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 442mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
232+ 0.31 EUR
246+ 0.29 EUR
Mindestbestellmenge: 109
P6KE350A P6KE350A ONSEMI P6KE350A.pdf Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Produkt ist nicht verfügbar
P6KE100CA P6KE100CA ONSEMI P6KE100CA.pdf Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
FQP7P06 FQP7P06 ONSEMI FQP7P06-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.95A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
6N137M 6N137M ONSEMI 6N137.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
ESD7C3.3DT5G ONSEMI esd7c3.3d-d.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 0.24W; double,common anode; SOT723; Ch: 2
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; double
Breakdown voltage: 5V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.24W
Mounting: SMD
Case: SOT723
Capacitance: 12...13pF
auf Bestellung 7205 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
319+ 0.22 EUR
421+ 0.17 EUR
550+ 0.13 EUR
582+ 0.12 EUR
Mindestbestellmenge: 162
7WB383MUTAG ONSEMI 7WB383-D.PDF Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Kind of integrated circuit: bus switch; translator
Produkt ist nicht verfügbar
7WBD383MUTAG ONSEMI 7wbd383-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Kind of integrated circuit: bus switch; translator
Produkt ist nicht verfügbar
BAS16WT1G BAS16WT1G ONSEMI BAS16WT1G.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 8220 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
736+ 0.097 EUR
1462+ 0.049 EUR
2294+ 0.031 EUR
3572+ 0.02 EUR
3788+ 0.019 EUR
Mindestbestellmenge: 556
BAS16XV2T1G BAS16XV2T1G ONSEMI BAS16XV2.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 2781 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
685+ 0.1 EUR
863+ 0.083 EUR
1220+ 0.059 EUR
1743+ 0.041 EUR
2359+ 0.03 EUR
2488+ 0.029 EUR
Mindestbestellmenge: 500
BAS16XV2T5G BAS16XV2T5G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 5050 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
676+ 0.11 EUR
1226+ 0.058 EUR
1743+ 0.041 EUR
1924+ 0.037 EUR
Mindestbestellmenge: 455
FDMC86183 ONSEMI fdmc86183-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 189A; 52W; Power33
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 189A
Case: Power33
Drain-source voltage: 100V
Drain current: 29A
Produkt ist nicht verfügbar
FDMS86183 ONSEMI fdms86183-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Mounting: SMD
On-state resistance: 34.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 187A
Case: Power56
Drain-source voltage: 100V
Drain current: 32A
Produkt ist nicht verfügbar
BUT12A BUT12A ONSEMI FAIRS18517-1.pdf?t.download=true&u=5oefqw BUT12A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 8A; 125W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 8A
Power: 125W
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
NCP716BSN330T1G ncp716b-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP716B
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Produkt ist nicht verfügbar
NCP716BSN500T1G ncp716b-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; TSOP5; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716B
Mounting: SMD
Case: TSOP5
Tolerance: ±2%
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.955V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT12TBG ncp716-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 1.2V
Output current: 80mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT15TBG ncp716-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 1.5V
Output current: 80mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT18TBG ncp716-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 80mA
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT30TBG ncp716-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 80mA; WDFN6; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 80mA
Voltage drop: 0.58V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MT33TBG ncp716-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; WDFN6; SMD
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 80mA
Voltage drop: 0.56V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
NCP716MTG50TBG ncp716-d.pdf
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; WDFN6; SMD; ±2%
Operating temperature: -40...125°C
Manufacturer series: NCP716
Mounting: SMD
Case: WDFN6
Tolerance: ±2%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...24V
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
MC74AC646DWG MC74AC646-D.pdf
MC74AC646DWG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,register,transceiver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; register; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: AC
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
13+5.91 EUR
18+ 3.99 EUR
19+ 3.77 EUR
Mindestbestellmenge: 13
MC74ACT646DWG MC74AC646-D.pdf
MC74ACT646DWG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,register,transceiver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; register; transceiver
Number of channels: 8
Technology: TTL
Mounting: SMD
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Family: ACT
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
14+5.21 EUR
18+ 3.99 EUR
19+ 3.78 EUR
Mindestbestellmenge: 14
1N4749A 1N4728A-1N4764A%20N0183%20REV.C.pdf ONSM-S-A0003585147-1.pdf?t.download=true&u=5oefqw 1N47xxA-SERIES.pdf 1N4740A SERIES_O2104.pdf
1N4749A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; DO41; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
239+0.3 EUR
Mindestbestellmenge: 239
FQPF8N80C FQPF8N80C.pdf
FQPF8N80C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; 59W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 59W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
NCP380HMU20AATBG ncp380-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
MBRM120LT3G mbrm120l-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; DO216AA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO216AA
Max. load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
FDS8447 description FDS8447.pdf
FDS8447
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Mounting: SMD
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 40V
Drain current: 12.8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
auf Bestellung 1815 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+2.42 EUR
49+ 1.49 EUR
67+ 1.08 EUR
71+ 1.02 EUR
500+ 0.99 EUR
Mindestbestellmenge: 30
FDP8447L fdp8447l-d.pdf
FDP8447L
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 60W; TO220-3
Mounting: THT
Power dissipation: 60W
Polarisation: unipolar
Kind of package: tube
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Case: TO220-3
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 13.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
1N4933G 1N4933_7.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
MC74VHC1G03DTT1G mc74vhc1g03-d.pdf
MC74VHC1G03DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
Produkt ist nicht verfügbar
FODM611 FODM611.pdf
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; 10Mbps; 40kV/μs
Kind of output: logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Case: Mini-flat 5pin
Max. off-state voltage: 5V
Turn-on time: 20ns
Turn-off time: 10ns
Output voltage: -500mV...7.5V
Number of channels: 1
Produkt ist nicht verfügbar
FODM611R2 FODM611R2.pdf
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Kind of output: open collector
Insulation voltage: 3.75kV
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Case: Mini-flat 4pin
Number of channels: 1
Produkt ist nicht verfügbar
FDG6335N FDG6335N.pdf
FDG6335N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 442mΩ
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
109+0.66 EUR
232+ 0.31 EUR
246+ 0.29 EUR
Mindestbestellmenge: 109
P6KE350A P6KE350A.pdf
P6KE350A
Hersteller: ONSEMI
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 350V; 2A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 350V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Produkt ist nicht verfügbar
P6KE100CA P6KE100CA.pdf
P6KE100CA
Hersteller: ONSEMI
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 100V; 4.4A; bidirectional; DO15; 600W
Type of diode: TVS
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
FQP7P06 FQP7P06-DTE.pdf
FQP7P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.95A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+35.75 EUR
Mindestbestellmenge: 2
6N137M 6N137.pdf
6N137M
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
ESD7C3.3DT5G esd7c3.3d-d.pdf
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; 0.24W; double,common anode; SOT723; Ch: 2
Max. off-state voltage: 3.3V
Semiconductor structure: common anode; double
Breakdown voltage: 5V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.24W
Mounting: SMD
Case: SOT723
Capacitance: 12...13pF
auf Bestellung 7205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
319+ 0.22 EUR
421+ 0.17 EUR
550+ 0.13 EUR
582+ 0.12 EUR
Mindestbestellmenge: 162
7WB383MUTAG 7WB383-D.PDF
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Kind of integrated circuit: bus switch; translator
Produkt ist nicht verfügbar
7WBD383MUTAG 7wbd383-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; bus switch,translator; TTL; SMD; uDFN8; 4÷5.5VDC
Mounting: SMD
Case: uDFN8
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Kind of integrated circuit: bus switch; translator
Produkt ist nicht verfügbar
BAS16WT1G BAS16WT1G.pdf
BAS16WT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 8220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
556+0.13 EUR
736+ 0.097 EUR
1462+ 0.049 EUR
2294+ 0.031 EUR
3572+ 0.02 EUR
3788+ 0.019 EUR
Mindestbestellmenge: 556
BAS16XV2T1G BAS16XV2.PDF
BAS16XV2T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 2781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
500+0.14 EUR
685+ 0.1 EUR
863+ 0.083 EUR
1220+ 0.059 EUR
1743+ 0.041 EUR
2359+ 0.03 EUR
2488+ 0.029 EUR
Mindestbestellmenge: 500
BAS16XV2T5G bas16xv2t1-d.pdf
BAS16XV2T5G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 5050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
455+0.16 EUR
676+ 0.11 EUR
1226+ 0.058 EUR
1743+ 0.041 EUR
1924+ 0.037 EUR
Mindestbestellmenge: 455
FDMC86183 fdmc86183-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 189A; 52W; Power33
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 189A
Case: Power33
Drain-source voltage: 100V
Drain current: 29A
Produkt ist nicht verfügbar
FDMS86183 fdms86183-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 187A; 63W; Power56
Mounting: SMD
On-state resistance: 34.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 187A
Case: Power56
Drain-source voltage: 100V
Drain current: 32A
Produkt ist nicht verfügbar
BUT12A FAIRS18517-1.pdf?t.download=true&u=5oefqw BUT12A.pdf
BUT12A
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1kV; 8A; 125W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1kV
Collector current: 8A
Power: 125W
Case: TO220
Mounting: THT
Produkt ist nicht verfügbar
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