| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NCP81074BMNTBG | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -10...10A Number of channels: 1 Supply voltage: 4.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 7ns Pulse fall time: 7ns |
Produkt ist nicht verfügbar |
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| NCP59800BMNADJTBG | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; DFN8 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.5V Output voltage: 0.8...5V Output current: 1A Case: DFN8 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 2 Input voltage: 2.2...6V Manufacturer series: NCP59800 |
Produkt ist nicht verfügbar |
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| NCP81075MNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns |
Produkt ist nicht verfügbar |
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| NCP81253MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC Type of integrated circuit: driver Case: DFN8 Mounting: SMD Operating temperature: -40...100°C Kind of integrated circuit: gate driver; high-side; low-side Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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NCV7342MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; DFN8; reel,tape Supply voltage: 4.5...5.5V DC Mounting: SMD Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: transceiver Case: DFN8 Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
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NCV7344AMW0R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; DFN8; reel,tape Type of integrated circuit: interface Case: DFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
Produkt ist nicht verfügbar |
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NCV7428MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; system basis chip SBC; 4÷28VDC; SMD; DFN8 Type of integrated circuit: interface Case: DFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Application: automotive industry Integrated circuit features: integrated voltage regulator; LIN transceiver Kind of integrated circuit: system basis chip SBC Supply voltage: 4...28V DC |
Produkt ist nicht verfügbar |
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FDMS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 27A Power dissipation: 78W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 103mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDMS86101DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDMS86200DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDMS86300DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NB3L553MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: fanout buffer Number of channels: 1 Mounting: SMD Supply voltage: 2.375...5.25V DC Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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| NRVHP420MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A Mounting: SMD Max. forward impulse current: 40A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 4A Max. forward voltage: 1.1V Load current: 2A Semiconductor structure: double independent Reverse recovery time: 40ns |
Produkt ist nicht verfügbar |
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| NRVHP620MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A Semiconductor structure: double independent Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
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| NRVHP620MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 6A Max. forward voltage: 1.09V Load current: 3A Semiconductor structure: double independent Reverse recovery time: 25ns |
Produkt ist nicht verfügbar |
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| NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 8A Max. forward voltage: 1.05V Load current: 4A Semiconductor structure: double independent Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
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| NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Max. forward impulse current: 80A Case: DFN8 Kind of package: reel; tape Application: automotive industry Type of diode: rectifying Max. off-state voltage: 200V Max. load current: 8A Max. forward voltage: 1.05V Load current: 4A Semiconductor structure: double independent Reverse recovery time: 50ns |
Produkt ist nicht verfügbar |
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NVMFD5C462NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 25W Dimensions: 5x6mm Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 52A On-state resistance: 4.7mΩ Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MC100LVELT23MNRG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2 Type of integrated circuit: digital Mounting: SMD Number of channels: 2 Case: DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: logic level voltage translator; non-inverting Manufacturer series: 100LVELT Number of inputs: 4 Number of outputs: 2 |
Produkt ist nicht verfügbar |
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| NCP5901BMNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
Produkt ist nicht verfügbar |
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| NCP5901MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -10...125°C |
Produkt ist nicht verfügbar |
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| NCP81145MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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| NCP81146MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Topology: buck Kind of integrated circuit: gate driver; high-side; low-side Case: DFN8 Supply voltage: 4.5...13.2V DC Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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| NCP81258MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Type of integrated circuit: driver Mounting: SMD Case: DFN8 Operating temperature: -10...125°C Kind of integrated circuit: gate driver; high-side; low-side Supply voltage: 4.5...13.2V DC Topology: buck |
Produkt ist nicht verfügbar |
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NCV51190MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.675...1.35V Output current: 1.5A Mounting: SMD Case: DFN8 Number of channels: 1 Operating temperature: -40...125°C Application: automotive industry; for DDR memories Operating voltage: 1.35...2.5/2.2...5.5V |
Produkt ist nicht verfügbar |
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| FDMS7650DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 200A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 206nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS8320LDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 192A Pulsed drain current: 300A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -65A Power dissipation: 107W Case: DFN8 Gate-source voltage: ±16V On-state resistance: 13mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| NCP45520IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: DFN8 Kind of package: reel; tape Kind of integrated circuit: high-side Output current: 10.5A Control voltage: 0.5...13.5V DC Supply voltage: 3...5.5V DC On-state resistance: 22.5mΩ Active logical level: low Kind of output: N-Channel |
auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP45522IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Case: DFN8 Supply voltage: 3...5.5V DC On-state resistance: 31.7mΩ Output current: 6A Number of channels: 1 Kind of output: N-Channel Active logical level: high Kind of package: reel; tape Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD |
Produkt ist nicht verfügbar |
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| NCP45523IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: DFN8 Kind of package: reel; tape Kind of integrated circuit: high-side Output current: 6A Control voltage: 0.5...13.5V DC Supply voltage: 3...5.5V DC On-state resistance: 31.7mΩ Active logical level: high Kind of output: N-Channel |
Produkt ist nicht verfügbar |
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| NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Kind of package: reel; tape On-state resistance: 31.7mΩ Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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| NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Kind of package: reel; tape On-state resistance: 31.7mΩ Output current: 6A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: low Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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| NCP45610IMNTWG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Kind of package: reel; tape Active logical level: high Control voltage: 1...13.5V DC Output current: 8A Type of integrated circuit: power switch Kind of output: N-Channel Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 21mΩ Mounting: SMD Supply voltage: 3...5.5V DC |
Produkt ist nicht verfügbar |
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| NCP81080MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8 Case: DFN8 Topology: MOSFET half-bridge Operating temperature: -40...140°C Mounting: SMD Supply voltage: 5.5...20V DC Output current: -800...500mA Type of integrated circuit: driver Impulse rise time: 19ns Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side |
Produkt ist nicht verfügbar |
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MC100EPT21MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2 Operating temperature: -40...85°C Manufacturer series: 100EPT Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 1 Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Mounting: SMD Case: DFN8 Number of inputs: 2 Number of outputs: 1 Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |
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FDL100N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264 Drain-source voltage: 500V Drain current: 100A Case: TO264 Polarisation: unipolar On-state resistance: 55mΩ Power dissipation: 2.5kW Technology: UniFET™ Kind of channel: enhanced Gate charge: 238nC Gate-source voltage: ±30V Kind of package: tube Type of transistor: N-MOSFET Mounting: THT |
Produkt ist nicht verfügbar |
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| NV25256DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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| NV25256DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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| NV25256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
Produkt ist nicht verfügbar |
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| CAT25256HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 256kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 40ns |
Produkt ist nicht verfügbar |
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| CAT25256VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
Produkt ist nicht verfügbar |
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| CAT25256XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
Produkt ist nicht verfügbar |
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| CAT25256YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V |
Produkt ist nicht verfügbar |
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| CAV25256VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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| CAV25256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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FQB30N06LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22.6A; Idm: 128A; 79W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 22.6A Pulsed drain current: 128A Power dissipation: 79W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQD30N06TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDP030N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 138A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS030N06B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MMSZ5226BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 3667 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5251BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 2997 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86163P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -100V Drain current: -50A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 517 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP1117ST50T3G | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.2V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: NCP1117 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
auf Bestellung 1803 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSD4448 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Mounting: SMD Power dissipation: 0.4W Type of diode: switching Case: SOD123 Capacitance: 2pF Max. off-state voltage: 100V Max. forward voltage: 1V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 4ns Max. forward impulse current: 2A Leakage current: 5µA |
auf Bestellung 3970 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ43T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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MMSZ4678T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 1.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 5567 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4679T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2V; SMD; reel,tape; SOD123; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 5µA |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4680T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 4µA |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4681T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 2µA |
auf Bestellung 5180 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP81074BMNTBG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -10÷10A; Ch: 1; 4.5÷20VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -10...10A
Number of channels: 1
Supply voltage: 4.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 7ns
Pulse fall time: 7ns
Produkt ist nicht verfügbar
| NCP59800BMNADJTBG |
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Hersteller: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 0.8...5V
Output current: 1A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 2
Input voltage: 2.2...6V
Manufacturer series: NCP59800
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5V; 1A; DFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 0.8...5V
Output current: 1A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 2
Input voltage: 2.2...6V
Manufacturer series: NCP59800
Produkt ist nicht verfügbar
| NCP81075MNTXG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Produkt ist nicht verfügbar
| NCP81253MNTBG |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Case: DFN8
Mounting: SMD
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...5.5V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN8; 4.5÷5.5VDC
Type of integrated circuit: driver
Case: DFN8
Mounting: SMD
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| NCV7342MW3R2G |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; DFN8; reel,tape
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: DFN8
Type of integrated circuit: interface
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; DFN8; reel,tape
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: DFN8
Type of integrated circuit: interface
Produkt ist nicht verfügbar
| NCV7344AMW0R2G |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; DFN8; reel,tape
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; DFN8; reel,tape
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Produkt ist nicht verfügbar
| NCV7428MW3R2G |
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; SMD; DFN8
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Integrated circuit features: integrated voltage regulator; LIN transceiver
Kind of integrated circuit: system basis chip SBC
Supply voltage: 4...28V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; SMD; DFN8
Type of integrated circuit: interface
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Application: automotive industry
Integrated circuit features: integrated voltage regulator; LIN transceiver
Kind of integrated circuit: system basis chip SBC
Supply voltage: 4...28V DC
Produkt ist nicht verfügbar
| FDMS2572 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS86101DC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS86200DC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS86300DC |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NB3L553MNR4G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
Produkt ist nicht verfügbar
| NRVHP420MFDT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Max. forward impulse current: 40A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
Semiconductor structure: double independent
Reverse recovery time: 40ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 40ns; DFN8; Ufmax: 1.1V; Ifsm: 40A
Mounting: SMD
Max. forward impulse current: 40A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 4A
Max. forward voltage: 1.1V
Load current: 2A
Semiconductor structure: double independent
Reverse recovery time: 40ns
Produkt ist nicht verfügbar
| NRVHP620MFDT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
| NRVHP620MFDT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DFN8; Ufmax: 1.09V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 6A
Max. forward voltage: 1.09V
Load current: 3A
Semiconductor structure: double independent
Reverse recovery time: 25ns
Produkt ist nicht verfügbar
| NRVHP820MFDT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
| NRVHP820MFDT3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Max. forward impulse current: 80A
Case: DFN8
Kind of package: reel; tape
Application: automotive industry
Type of diode: rectifying
Max. off-state voltage: 200V
Max. load current: 8A
Max. forward voltage: 1.05V
Load current: 4A
Semiconductor structure: double independent
Reverse recovery time: 50ns
Produkt ist nicht verfügbar
| NVMFD5C462NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MC100LVELT23MNRG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Manufacturer series: 100LVELT
Number of inputs: 4
Number of outputs: 2
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 2
Case: DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: logic level voltage translator; non-inverting
Manufacturer series: 100LVELT
Number of inputs: 4
Number of outputs: 2
Produkt ist nicht verfügbar
| NCP5901BMNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Produkt ist nicht verfügbar
| NCP5901MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -10...125°C
Produkt ist nicht verfügbar
| NCP81145MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| NCP81146MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN8
Supply voltage: 4.5...13.2V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| NCP81258MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...13.2V DC
Topology: buck
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Type of integrated circuit: driver
Mounting: SMD
Case: DFN8
Operating temperature: -10...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Supply voltage: 4.5...13.2V DC
Topology: buck
Produkt ist nicht verfügbar
| NCV51190MNTAG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: DFN8
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
Produkt ist nicht verfügbar
| FDMS7650DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 200A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 200A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 206nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS8320LDC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDWS9509L-F085 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| NCP45520IMNTWG-L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 10.5A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 22.5mΩ
Active logical level: low
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 10.5A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 22.5mΩ
Active logical level: low
Kind of output: N-Channel
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 41+ | 1.74 EUR |
| 46+ | 1.57 EUR |
| 63+ | 1.14 EUR |
| 67+ | 1.08 EUR |
| NCP45522IMNTWG-H |
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Output current: 6A
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Produkt ist nicht verfügbar
| NCP45523IMNTWG-H |
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 6A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Active logical level: high
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: DFN8
Kind of package: reel; tape
Kind of integrated circuit: high-side
Output current: 6A
Control voltage: 0.5...13.5V DC
Supply voltage: 3...5.5V DC
On-state resistance: 31.7mΩ
Active logical level: high
Kind of output: N-Channel
Produkt ist nicht verfügbar
| NCP45524IMNTWG-H |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| NCP45524IMNTWG-L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Kind of package: reel; tape
On-state resistance: 31.7mΩ
Output current: 6A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: low
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| NCP45610IMNTWG |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 1...13.5V DC
Output current: 8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 21mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Kind of package: reel; tape
Active logical level: high
Control voltage: 1...13.5V DC
Output current: 8A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 21mΩ
Mounting: SMD
Supply voltage: 3...5.5V DC
Produkt ist nicht verfügbar
| NCP81080MNTBG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Case: DFN8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; DFN8
Case: DFN8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
Produkt ist nicht verfügbar
| MC100EPT21MNR4G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: DFN8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Category: Level translators
Description: IC: digital; Ch: 1; 3÷3.6VDC; SMD; DFN8; -40÷85°C; reel,tape; IN: 2
Operating temperature: -40...85°C
Manufacturer series: 100EPT
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 1
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Mounting: SMD
Case: DFN8
Number of inputs: 2
Number of outputs: 1
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
| FDL100N50F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
| NV25256DTHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| NV25256DWHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| NV25256MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Produkt ist nicht verfügbar
| CAT25256HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 256kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 256kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 40ns
Produkt ist nicht verfügbar
| CAT25256VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Produkt ist nicht verfügbar
| CAT25256XI-T2 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Produkt ist nicht verfügbar
| CAT25256YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Produkt ist nicht verfügbar
| CAV25256VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| CAV25256YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| FQB30N06LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.6A; Idm: 128A; 79W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.6A
Pulsed drain current: 128A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.6A; Idm: 128A; 79W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.6A
Pulsed drain current: 128A
Power dissipation: 79W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQD30N06TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDP030N06 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS030N06B |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MMSZ5226BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3667 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 544+ | 0.13 EUR |
| 1036+ | 0.069 EUR |
| 1578+ | 0.045 EUR |
| 2193+ | 0.033 EUR |
| 2326+ | 0.031 EUR |
| MMSZ5251BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 2997 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 521+ | 0.14 EUR |
| 1015+ | 0.07 EUR |
| 2041+ | 0.035 EUR |
| 2156+ | 0.033 EUR |
| FDMS86163P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 517 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.66 EUR |
| 24+ | 3.03 EUR |
| 32+ | 2.3 EUR |
| 33+ | 2.17 EUR |
| NCP1117ST50T3G | |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.2V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: NCP1117
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1803 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 88+ | 0.82 EUR |
| 106+ | 0.68 EUR |
| 168+ | 0.43 EUR |
| 178+ | 0.4 EUR |
| 500+ | 0.39 EUR |
| MMSD4448 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Mounting: SMD
Power dissipation: 0.4W
Type of diode: switching
Case: SOD123
Capacitance: 2pF
Max. off-state voltage: 100V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Mounting: SMD
Power dissipation: 0.4W
Type of diode: switching
Case: SOD123
Capacitance: 2pF
Max. off-state voltage: 100V
Max. forward voltage: 1V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 4ns
Max. forward impulse current: 2A
Leakage current: 5µA
auf Bestellung 3970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 569+ | 0.13 EUR |
| 752+ | 0.095 EUR |
| 987+ | 0.073 EUR |
| 1042+ | 0.069 EUR |
| 3000+ | 0.068 EUR |
| MMSZ43T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| MMSZ4678T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 1.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 1.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5567 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 527+ | 0.14 EUR |
| 754+ | 0.095 EUR |
| 1171+ | 0.061 EUR |
| 1345+ | 0.053 EUR |
| 1507+ | 0.047 EUR |
| 2513+ | 0.028 EUR |
| 2660+ | 0.027 EUR |
| MMSZ4679T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; reel,tape; SOD123; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; reel,tape; SOD123; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.39 EUR |
| MMSZ4680T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
auf Bestellung 2475 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 417+ | 0.17 EUR |
| 618+ | 0.12 EUR |
| 802+ | 0.089 EUR |
| 1171+ | 0.061 EUR |
| 1774+ | 0.04 EUR |
| 1873+ | 0.038 EUR |
| MMSZ4681T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 2µA
auf Bestellung 5180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 358+ | 0.2 EUR |
| 506+ | 0.14 EUR |
| 1071+ | 0.067 EUR |
| 1887+ | 0.038 EUR |
| 1985+ | 0.036 EUR |
| 3000+ | 0.035 EUR |