FDMS8320LDC ON Semiconductor
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 2.15 EUR |
6000+ | 1.98 EUR |
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Technische Details FDMS8320LDC ON Semiconductor
Description: MOSFET N-CH 40V 44A DLCOOL56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 130A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 44A, 10V, Power Dissipation (Max): 3.2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11635 pF @ 20 V.
Weitere Produktangebote FDMS8320LDC nach Preis ab 2.24 EUR bis 4.79 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMS8320LDC | Hersteller : onsemi |
Description: MOSFET N-CH 40V 44A DLCOOL56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 44A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11635 pF @ 20 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8320LDC | Hersteller : onsemi / Fairchild | MOSFETs 40V 130A Dual Cool PowerTrench MOSFET |
auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8320LDC | Hersteller : onsemi |
Description: MOSFET N-CH 40V 44A DLCOOL56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 44A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11635 pF @ 20 V |
auf Bestellung 4452 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8320LDC | Hersteller : ONSEMI |
Description: ONSEMI - FDMS8320LDC - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 212255 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8320LDC | Hersteller : Fairchild Semiconductor |
Description: N-CHANNEL DUAL COOLTM 56 POWER T Packaging: Bulk |
auf Bestellung 41418 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8320LDC | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R |
Produkt ist nicht verfügbar |
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FDMS8320LDC | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R |
Produkt ist nicht verfügbar |
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FDMS8320LDC | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 40V 44A 8-Pin Power 56 T/R |
Produkt ist nicht verfügbar |
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FDMS8320LDC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 192A Pulsed drain current: 300A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS8320LDC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 192A Pulsed drain current: 300A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |