FDMS86300DC onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 24A/76A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.8 EUR |
| 10+ | 3.99 EUR |
| 100+ | 3.18 EUR |
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Technische Details FDMS86300DC onsemi
Description: MOSFET N-CH 80V 24A/76A DLCOOL56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V, Power Dissipation (Max): 3.2W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V.
Weitere Produktangebote FDMS86300DC nach Preis ab 2.18 EUR bis 4.82 EUR
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Description: ONSEMI - FDMS86300DC - Leistungs-MOSFET, n-Kanal, 80 V, 76 A, 0.0026 ohm, Power 56, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 76A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.3V euEccn: NLR Verlustleistung: 125W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0026ohm SVHC: Lead (23-Jan-2024) |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDMS86300DC | Hersteller : onsemi |
Description: MOSFET N-CH 80V 24A/76A DLCOOL56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7005 pF @ 40 V |
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FDMS86300DC | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 110A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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