| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SBC807-25LT3G | ONSEMI |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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SBC807-25WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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74LVX3245MTC | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.7...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: tube Manufacturer series: LVX Quiescent current: 80µA Kind of output: 3-state |
Produkt ist nicht verfügbar |
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74LVX3245MTCX | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.7...3.6V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: 74LVX Kind of output: 3-state |
Produkt ist nicht verfügbar |
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| 74LVX3245QSCX | ONSEMI |
Category: Level translators Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Supply voltage: 2.7...3.6V DC Mounting: SMD Case: QSOP24 Operating temperature: -40...85°C Kind of package: reel; tape Manufacturer series: 74LVX Kind of output: 3-state |
Produkt ist nicht verfügbar |
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MC74HC151ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; data selector; multiplexer Number of channels: 1 Number of inputs: 12 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: HC Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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MC74HC151ADTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; data selector; multiplexer Number of channels: 1 Number of inputs: 12 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Supply voltage: 2...6V DC Family: HC Kind of package: tube Operating temperature: -55...125°C |
auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74HC151ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; data selector; multiplexer Number of channels: 1 Number of inputs: 12 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Supply voltage: 2...6V DC Family: HC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| FMB3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; SuperSOT-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.7W Case: SuperSOT-6 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
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MBT3904DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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PZT3904T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5135DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Collector current: 0.1A Type of transistor: PNP x2 Power dissipation: 0.187W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Mounting: SMD Collector-emitter voltage: 50V |
Produkt ist nicht verfügbar |
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MMBD914LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 75ns; SOT23; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: switching Case: SOT23 Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Reverse recovery time: 75ns |
auf Bestellung 12480 Stücke: Lieferzeit 14-21 Tag (e) |
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MJ15001G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 15A Power dissipation: 200W Case: TO3 Current gain: 25...150 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
Produkt ist nicht verfügbar |
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SBAS40-04LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: double series Capacitance: 5pF Case: SOT23 Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W |
auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTH10LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz |
auf Bestellung 2930 Stücke: Lieferzeit 14-21 Tag (e) |
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MC79L12ABDR2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; ±2%; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
Produkt ist nicht verfügbar |
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MC79L12ACDR2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
auf Bestellung 808 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC79L12ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
auf Bestellung 2831 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC79L12ACPRAG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; 0÷125°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: -12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±2% Number of channels: 1 Manufacturer series: MC79L00A |
Produkt ist nicht verfügbar |
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FDD2582 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK Kind of package: reel; tape Drain-source voltage: 150V Drain current: 21A On-state resistance: 172mΩ Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar Gate charge: 25nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK |
Produkt ist nicht verfügbar |
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BAV70TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ifsm: 500mA; 360mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT416 Max. forward impulse current: 0.5A Power dissipation: 0.36W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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BC847BTT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2/0.3W; SOT416 Mounting: SMD Case: SOT416 Kind of package: reel; tape Power dissipation: 0.2/0.3W Frequency: 100MHz Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Current gain: 150...450 Collector current: 0.1A |
auf Bestellung 6440 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857BTT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT416 Current gain: 150...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 4890 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT416; Ufmax: 1.25V; 360mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT416 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.36W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MBR0520LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 0.33V Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ALS-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board; Comp: NOA1305 Type of accessories for development kits: expansion board Kit contents: prototype board Components: NOA1305 Interface: I2C Kind of connector: Pmod connector development kits accessories features: light sensor |
Produkt ist nicht verfügbar |
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MJ21194G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 250W Case: TO3 Current gain: 8...75 Mounting: THT Kind of package: in-tray Frequency: 4MHz |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5931BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 2185 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54CWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 7.6pF Case: SOT323 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAT54CWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Case: SOT323 Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
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BAV99WT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 4ns; SOT323; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Capacitance: 2pF Case: SOT323 Kind of package: reel; tape |
auf Bestellung 1471 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAV99WT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SC70 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP3420DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 4.6...13.2V DC Mounting: SMD Operating temperature: 0...85°C |
Produkt ist nicht verfügbar |
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NCP51530BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Output current: -3...3.5A Supply voltage: 10...17V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Voltage class: 700V |
Produkt ist nicht verfügbar |
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| NCP51530BMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: DFN10 Output current: -3...3.5A Supply voltage: 10...17V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Voltage class: 700V |
Produkt ist nicht verfügbar |
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NCP51561BADWR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO16 Output current: -9...4.5A Number of channels: 2 Supply voltage: 3...5V DC; 9.5...30V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 19ns Pulse fall time: 19ns |
Produkt ist nicht verfügbar |
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NCP51561BBDWR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2 Mounting: SMD Operating temperature: -40...125°C Output current: -9...4.5A Type of integrated circuit: driver Pulse fall time: 19ns Case: SO16 Kind of integrated circuit: gate driver; high-side; low-side Number of channels: 2 Impulse rise time: 19ns Supply voltage: 3...5V DC; 9.5...30V DC |
Produkt ist nicht verfügbar |
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| NCP51705MNTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A Supply voltage: -8...0V DC; 10...22V DC Mounting: SMD Operating temperature: -40...125°C Output current: -6...6A Type of integrated circuit: driver Impulse rise time: 15ns Pulse fall time: 15ns Technology: SiC Kind of integrated circuit: gate driver; high-side; low-side Case: QFN24 |
Produkt ist nicht verfügbar |
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| NCP51810AMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Technology: GaN Case: QFN15 Mounting: SMD Output current: -2...1A Operating temperature: -40...125°C Kind of integrated circuit: gate driver; high-side; low-side Type of integrated circuit: driver Supply voltage: 9...17V DC |
Produkt ist nicht verfügbar |
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| NCP51820AMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A Technology: GaN Case: QFN15 Mounting: SMD Output current: -2...1A Operating temperature: -40...125°C Voltage class: 650V Kind of integrated circuit: gate driver; high-side; low-side Type of integrated circuit: driver Supply voltage: 9...17V DC |
Produkt ist nicht verfügbar |
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NCP81075DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns |
Produkt ist nicht verfügbar |
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| NCP81075MTTXG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: WDFN10 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns |
Produkt ist nicht verfügbar |
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| NRVBSS24NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 40V Application: automotive industry Max. load current: 3A Load current: 2A Max. forward voltage: 0.5V Max. forward impulse current: 75A Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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| CAT24C32C5CTR | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; WLCSP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: WLCSP5 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
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| CAT24C32HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 1MHz Kind of interface: serial Memory: 32kb EEPROM Operating voltage: 1.7...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 4kx8bit |
Produkt ist nicht verfügbar |
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MC100EPT23DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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MC100EPT23DTG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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MC100EPT23DTR2G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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| MC100EPT23MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator Number of channels: 2 Mounting: SMD Case: VDFN8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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FDS4935A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2452 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4935BZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1032 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP42BU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 50MHz |
Produkt ist nicht verfügbar |
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KSP42TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
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MJE5852G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB Case: TO220AB Mounting: THT Collector-emitter voltage: 400V Collector current: 8A Type of transistor: PNP Power dissipation: 80W Polarisation: bipolar Kind of package: tube |
Produkt ist nicht verfügbar |
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2SC5226A-4-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.15W Case: SC70 Current gain: 90...180 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
Produkt ist nicht verfügbar |
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2SC5226A-5-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.15W Case: SC70 Current gain: 135...270 Mounting: SMD Kind of package: reel; tape Frequency: 5...7GHz |
Produkt ist nicht verfügbar |
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NCP1034DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 10÷18V; SO16; buck Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 2A Frequency: 170...430kHz Mounting: SMD Case: SO16 Topology: buck Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 10...18V |
Produkt ist nicht verfügbar |
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| FDG6301N-F085 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 7Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
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| FDMC86259P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33 Kind of package: reel; tape Drain-source voltage: -150V Drain current: -13A On-state resistance: 178mΩ Type of transistor: P-MOSFET Power dissipation: 62W Polarisation: unipolar Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -20A Mounting: SMD Case: Power33 |
Produkt ist nicht verfügbar |
| SBC807-25LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
| SBC807-25WT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
| 74LVX3245MTC |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: LVX
Quiescent current: 80µA
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: tube
Manufacturer series: LVX
Quiescent current: 80µA
Kind of output: 3-state
Produkt ist nicht verfügbar
| 74LVX3245MTCX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: 74LVX
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: 74LVX
Kind of output: 3-state
Produkt ist nicht verfügbar
| 74LVX3245QSCX |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Case: QSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: 74LVX
Kind of output: 3-state
Category: Level translators
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Supply voltage: 2.7...3.6V DC
Mounting: SMD
Case: QSOP24
Operating temperature: -40...85°C
Kind of package: reel; tape
Manufacturer series: 74LVX
Kind of output: 3-state
Produkt ist nicht verfügbar
| MC74HC151ADR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| MC74HC151ADTG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Operating temperature: -55...125°C
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 79+ | 0.92 EUR |
| 83+ | 0.86 EUR |
| 88+ | 0.82 EUR |
| 98+ | 0.73 EUR |
| 175+ | 0.41 EUR |
| 184+ | 0.39 EUR |
| MC74HC151ADTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer,data selector; Ch: 1; IN: 12; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; data selector; multiplexer
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| FMB3904 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; SuperSOT-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; SuperSOT-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: SuperSOT-6
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
| MBT3904DW1T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.79 EUR |
| PZT3904T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 180+ | 0.4 EUR |
| 327+ | 0.22 EUR |
| 428+ | 0.17 EUR |
| 450+ | 0.16 EUR |
| MUN5135DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.187W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
| MMBD914LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 75ns; SOT23; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 75ns; SOT23; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
auf Bestellung 12480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 970+ | 0.074 EUR |
| 2110+ | 0.034 EUR |
| 2605+ | 0.027 EUR |
| 2925+ | 0.024 EUR |
| 3090+ | 0.023 EUR |
| MJ15001G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 15A; 200W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 15A
Power dissipation: 200W
Case: TO3
Current gain: 25...150
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
| SBAS40-04LT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.12A; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.29 EUR |
| 350+ | 0.2 EUR |
| 428+ | 0.17 EUR |
| 752+ | 0.095 EUR |
| 1382+ | 0.052 EUR |
| 1458+ | 0.049 EUR |
| MMBTH10LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1064+ | 0.067 EUR |
| 1211+ | 0.059 EUR |
| 1583+ | 0.045 EUR |
| 1673+ | 0.043 EUR |
| MC79L12ABDR2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; ±2%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; ±2%; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Produkt ist nicht verfügbar
| MC79L12ACDR2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; SO8; SMD; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
auf Bestellung 808 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 225+ | 0.32 EUR |
| 363+ | 0.2 EUR |
| 472+ | 0.15 EUR |
| 500+ | 0.14 EUR |
| MC79L12ACPG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
auf Bestellung 2831 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 186+ | 0.39 EUR |
| 236+ | 0.3 EUR |
| 295+ | 0.24 EUR |
| 311+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
| MC79L12ACPRAG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.1A; TO92; THT; 0÷125°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: -12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±2%
Number of channels: 1
Manufacturer series: MC79L00A
Produkt ist nicht verfügbar
| FDD2582 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 172mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 172mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar
| BAV70TT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ifsm: 500mA; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT416
Max. forward impulse current: 0.5A
Power dissipation: 0.36W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ifsm: 500mA; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT416
Max. forward impulse current: 0.5A
Power dissipation: 0.36W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BC847BTT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2/0.3W; SOT416
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Power dissipation: 0.2/0.3W
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Current gain: 150...450
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2/0.3W; SOT416
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Power dissipation: 0.2/0.3W
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Current gain: 150...450
Collector current: 0.1A
auf Bestellung 6440 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 455+ | 0.16 EUR |
| 589+ | 0.12 EUR |
| 1112+ | 0.064 EUR |
| 1701+ | 0.042 EUR |
| 2399+ | 0.03 EUR |
| 2537+ | 0.028 EUR |
| BC857BTT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT416
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT416
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 4890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 544+ | 0.13 EUR |
| 1127+ | 0.063 EUR |
| 1489+ | 0.048 EUR |
| 2778+ | 0.026 EUR |
| 2942+ | 0.024 EUR |
| BAS16TT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT416; Ufmax: 1.25V; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT416
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.36W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT416; Ufmax: 1.25V; 360mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT416
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.36W
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MBR0520LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 0.33V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 0.33V
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ALS-GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NOA1305
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NOA1305
Interface: I2C
Kind of connector: Pmod connector
development kits accessories features: light sensor
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NOA1305
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NOA1305
Interface: I2C
Kind of connector: Pmod connector
development kits accessories features: light sensor
Produkt ist nicht verfügbar
| MJ21194G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 8...75
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 250W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 250W
Case: TO3
Current gain: 8...75
Mounting: THT
Kind of package: in-tray
Frequency: 4MHz
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 12.33 EUR |
| 9+ | 8.07 EUR |
| 1N5931BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 3W; 18V; reel,tape; CASE59; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 2185 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.23 EUR |
| 385+ | 0.19 EUR |
| 440+ | 0.16 EUR |
| 510+ | 0.14 EUR |
| 535+ | 0.13 EUR |
| BAT54CWT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 1720 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 417+ | 0.17 EUR |
| 633+ | 0.11 EUR |
| 1036+ | 0.069 EUR |
| 1720+ | 0.041 EUR |
| SBAT54CWT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
| BAV99WT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; SOT323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT323
Kind of package: reel; tape
auf Bestellung 1471 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 385+ | 0.19 EUR |
| 521+ | 0.14 EUR |
| 837+ | 0.086 EUR |
| 1042+ | 0.069 EUR |
| 1374+ | 0.052 EUR |
| 1471+ | 0.049 EUR |
| SBAV99WT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SC70
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 6ns; SC70; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SC70
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| NCP3420DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; 4.6÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 4.6...13.2V DC
Mounting: SMD
Operating temperature: 0...85°C
Produkt ist nicht verfügbar
| NCP51530BDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
Produkt ist nicht verfügbar
| NCP51530BMNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: DFN10
Output current: -3...3.5A
Supply voltage: 10...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Voltage class: 700V
Produkt ist nicht verfügbar
| NCP51561BADWR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO16
Output current: -9...4.5A
Number of channels: 2
Supply voltage: 3...5V DC; 9.5...30V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 19ns
Pulse fall time: 19ns
Produkt ist nicht verfügbar
| NCP51561BBDWR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Type of integrated circuit: driver
Pulse fall time: 19ns
Case: SO16
Kind of integrated circuit: gate driver; high-side; low-side
Number of channels: 2
Impulse rise time: 19ns
Supply voltage: 3...5V DC; 9.5...30V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO16; -9÷4.5A; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -9...4.5A
Type of integrated circuit: driver
Pulse fall time: 19ns
Case: SO16
Kind of integrated circuit: gate driver; high-side; low-side
Number of channels: 2
Impulse rise time: 19ns
Supply voltage: 3...5V DC; 9.5...30V DC
Produkt ist nicht verfügbar
| NCP51705MNTXG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Type of integrated circuit: driver
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SiC; QFN24; -6÷6A
Supply voltage: -8...0V DC; 10...22V DC
Mounting: SMD
Operating temperature: -40...125°C
Output current: -6...6A
Type of integrated circuit: driver
Impulse rise time: 15ns
Pulse fall time: 15ns
Technology: SiC
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN24
Produkt ist nicht verfügbar
| NCP51810AMNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
Produkt ist nicht verfügbar
| NCP51820AMNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Technology: GaN
Case: QFN15
Mounting: SMD
Output current: -2...1A
Operating temperature: -40...125°C
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side; low-side
Type of integrated circuit: driver
Supply voltage: 9...17V DC
Produkt ist nicht verfügbar
| NCP81075DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; SO8; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Produkt ist nicht verfügbar
| NCP81075MTTXG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Case: WDFN10
Output current: -4...4A
Number of channels: 2
Supply voltage: 8.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 8ns
Pulse fall time: 7ns
Produkt ist nicht verfügbar
| NRVBSS24NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Application: automotive industry
Max. load current: 3A
Load current: 2A
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Application: automotive industry
Max. load current: 3A
Load current: 2A
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
| CAT24C32C5CTR |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; WLCSP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; WLCSP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP5
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Produkt ist nicht verfügbar
| CAT24C32HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 1MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Produkt ist nicht verfügbar
| MC100EPT23DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| MC100EPT23DTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| MC100EPT23DTR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; SMD; TSSOP8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| MC100EPT23MNR4G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; SMD; VDFN8; -40÷85°C; reel,tape; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: differential translator to LVCMOS; LVPECL to LVTTL differential translator
Number of channels: 2
Mounting: SMD
Case: VDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| FDS4935A |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2452 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.2 EUR |
| 75+ | 0.97 EUR |
| 100+ | 0.72 EUR |
| 107+ | 0.67 EUR |
| 500+ | 0.65 EUR |
| FDS4935BZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1032 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.44 EUR |
| 83+ | 0.87 EUR |
| 107+ | 0.67 EUR |
| 113+ | 0.64 EUR |
| KSP42BU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Produkt ist nicht verfügbar
| KSP42TA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
| MJE5852G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Case: TO220AB
Mounting: THT
Collector-emitter voltage: 400V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
| 2SC5226A-4-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 90...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Produkt ist nicht verfügbar
| 2SC5226A-5-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.15W; SC70
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.15W
Case: SC70
Current gain: 135...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 5...7GHz
Produkt ist nicht verfügbar
| NCP1034DR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 10÷18V; SO16; buck
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 10÷18V; SO16; buck
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V
Produkt ist nicht verfügbar
| FDG6301N-F085 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| FDMC86259P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Kind of package: reel; tape
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Kind of package: reel; tape
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
Produkt ist nicht verfügbar