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FDC6305N FDC6305N onsemi fdc6305n-d.pdf Description: MOSFET 2N-CH 20V 2.7A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 40389 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 17
FDC6306P FDC6306P onsemi fdc6306p-d.pdf Description: MOSFET 2P-CH 20V 1.9A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 6544 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
21+ 0.87 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
FDC6333C FDC6333C onsemi fdc6333c-d.pdf Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 28676 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+ 0.84 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
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FDC634P onsemi fdc634p-d.pdf Description: MOSFET P-CH 20V 3.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
auf Bestellung 5000 Stücke:
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19+0.95 EUR
22+ 0.82 EUR
100+ 0.57 EUR
500+ 0.47 EUR
1000+ 0.4 EUR
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FDC6506P FDC6506P onsemi fdc6506p-d.pdf Description: MOSFET 2P-CH 30V 1.8A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Produkt ist nicht verfügbar
FDC653N FDC653N onsemi fdc653n-d.pdf Description: MOSFET N-CH 30V 5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
auf Bestellung 7454 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.93 EUR
100+ 0.64 EUR
500+ 0.54 EUR
1000+ 0.46 EUR
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FDC6561AN FDC6561AN onsemi fdc6561an-d.pdf Description: MOSFET 2N-CH 30V 2.5A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 4641 Stücke:
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17+1.07 EUR
20+ 0.91 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
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FDD5614P FDD5614P onsemi fdd5614p-d.pdf Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V
Produkt ist nicht verfügbar
FDD6690A FDD6690A onsemi fdd6690a-d.pdf Description: MOSFET N-CH 30V 12A/46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Produkt ist nicht verfügbar
FDG6301N FDG6301N onsemi fdg6301n-d.pdf Description: MOSFET 2N-CH 25V 0.22A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 67927 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
31+ 0.59 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
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FDG6303N FDG6303N onsemi fdg6303n-d.pdf Description: MOSFET 2N-CH 25V 500MA SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 60100 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
30+ 0.59 EUR
100+ 0.35 EUR
500+ 0.33 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
FDG6304P FDG6304P onsemi fdg6304p-d.pdf Description: MOSFET 2P-CH 25V 0.41A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
23+ 0.77 EUR
100+ 0.53 EUR
Mindestbestellmenge: 20
FDG6322C FDG6322C onsemi fdg6322c-d.pdf Description: MOSFET N/P-CH 25V 0.22A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
auf Bestellung 28061 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 25
FDLL300 FDLL300 onsemi ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 125V 200MA LL34
Produkt ist nicht verfügbar
FDN306P FDN306P onsemi FAIRS19378-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 12V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 6 V
auf Bestellung 51666 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 25
FDN336P FDN336P onsemi fdn336p-d.pdf Description: MOSFET P-CH 20V 1.3A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 8156 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
30+ 0.6 EUR
100+ 0.42 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
FDN339AN FDN339AN onsemi ONSM-S-A0003699943-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 20V 3A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
auf Bestellung 150716 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+ 0.66 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
FDN357N FDN357N onsemi fdn357n-d.pdf Description: MOSFET N-CH 30V 1.9A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V
auf Bestellung 16296 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
25+ 0.71 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
FDN358P FDN358P onsemi FAIRS20312-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 30V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 15 V
auf Bestellung 2621 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
26+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
FDN359AN FDN359AN onsemi fdn359an-d.pdf Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 30858 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+ 0.66 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
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FDN360P FDN360P onsemi fdn360p-d.pdf Description: MOSFET P-CH 30V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
auf Bestellung 77801 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
28+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
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FDN5618P FDN5618P onsemi fdn5618p-d.pdf Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 19296 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
FDN5630 FDN5630 onsemi fdn5630-d.pdf Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
auf Bestellung 24110 Stücke:
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FDS2572 FDS2572 onsemi FAIRS45105-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 4.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 57050 Stücke:
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FDS3672 FDS3672 onsemi fds3672-d.pdf Description: MOSFET N-CH 100V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
auf Bestellung 584 Stücke:
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FDS4435 FDS4435 onsemi FDS4435.pdf Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1604 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
FDS4465 FDS4465 onsemi fds4465-d.pdf Description: MOSFET P-CH 20V 13.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
auf Bestellung 11990 Stücke:
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FDS4935A FDS4935A onsemi fds4935a-d.pdf Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 29718 Stücke:
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FDS5670 FDS5670 onsemi fds5670-d.pdf Description: MOSFET N-CH 60V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V
Produkt ist nicht verfügbar
FDS6675 FDS6675 onsemi fds6675-d.pdf Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
FDS6690A FDS6690A onsemi fds6690a-d.pdf Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
auf Bestellung 6315 Stücke:
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FDS6875 FDS6875 onsemi fds6875-d.pdf Description: MOSFET 2P-CH 20V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2350 Stücke:
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FDS6898A FDS6898A onsemi FDS6898A.pdf Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12002 Stücke:
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FDS6912A FDS6912A onsemi ONSM-S-A0003584182-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1523 Stücke:
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FDS6975 FDS6975 onsemi ONSM-S-A0003584103-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1461 Stücke:
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FDS6990A FDS6990A onsemi fds6990a-d.pdf Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FDS9926A FDS9926A onsemi fds9926a-d.pdf Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 33153 Stücke:
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FQB34N20TM-AM002 FQB34N20TM-AM002 onsemi fqb34n20-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
FQB55N10TM FQB55N10TM onsemi ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 403 Stücke:
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FQD17P06TF FQD17P06TF onsemi Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N80TM FQD2N80TM onsemi fqd2n80-d.pdf Description: MOSFET N-CH 800V 1.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
FQT7N10LTF FQT7N10LTF onsemi fqt7n10ltf-d.pdf Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
auf Bestellung 12048 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.59 EUR
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FSA3157P6X FSA3157P6X onsemi ONSM-S-A0003544200-1.pdf?t.download=true&u=5oefqw Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.7ns, 3.8ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
HMHAA280R1 HMHAA280R1 onsemi hmhaa280-d.pdf Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
HUF75645S3ST HUF75645S3ST onsemi FAIRS45737-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
auf Bestellung 14970 Stücke:
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KSH122TF KSH122TF onsemi KSH122(I).pdf Description: TRANS NPN DARL 100V 8A DPAK
Produkt ist nicht verfügbar
KST42MTF KST42MTF onsemi KST42-KST43.pdf Description: TRANS NPN 300V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
KST92MTF KST92MTF onsemi DS_488_KST92.pdf Description: TRANS PNP 300V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
MB4S MB4S onsemi ONSM-S-A0003523414-1.pdf?t.download=true&u=5oefqw Description: BRIDGE RECT 1P 400V 500MA 4SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 108902 Stücke:
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MBRS340 MBRS340 onsemi Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar
MM74HC164MX MM74HC164MX onsemi ONSM-S-A0003590464-1.pdf?t.download=true&u=5oefqw Description: IC REGISTER SER/PAR I/O 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 23267 Stücke:
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MM74HC4052MX MM74HC4052MX onsemi MM74HC405x.pdf Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
MM74HCT04MX MM74HCT04MX onsemi ONSM-S-A0003587704-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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MM74HCU04MX MM74HCU04MX onsemi mm74hcu04-d.pdf Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 7.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 14ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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MMBD1403 MMBD1403 onsemi mmbd1405-d.pdf Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
auf Bestellung 118328 Stücke:
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MMBD1504A MMBD1504A onsemi mmbd1501-d.pdf Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
auf Bestellung 286748 Stücke:
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MMBD1505A MMBD1505A onsemi mmbd1501-d.pdf Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
auf Bestellung 36713 Stücke:
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MMBD4148se MMBD4148se onsemi mmbd4148se-d.pdf Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
MMBFJ112 MMBFJ112 onsemi ONSM-S-A0003590801-1.pdf?t.download=true&u=5oefqw Description: JFET N-CH 35V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 68236 Stücke:
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NC7NZ34K8X NC7NZ34K8X onsemi nc7nz34-d.pdf Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Produkt ist nicht verfügbar
FDC6305N fdc6305n-d.pdf
FDC6305N
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 2.7A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 40389 Stücke:
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17+1.04 EUR
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FDC6306P fdc6306p-d.pdf
FDC6306P
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 1.9A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 6544 Stücke:
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18+1.02 EUR
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FDC6333C fdc6333c-d.pdf
FDC6333C
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 2.5A/2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 28676 Stücke:
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FDC634P fdc634p-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
auf Bestellung 5000 Stücke:
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19+0.95 EUR
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FDC6506P fdc6506p-d.pdf
FDC6506P
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 1.8A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Produkt ist nicht verfügbar
FDC653N fdc653n-d.pdf
FDC653N
Hersteller: onsemi
Description: MOSFET N-CH 30V 5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
auf Bestellung 7454 Stücke:
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17+1.07 EUR
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FDC6561AN fdc6561an-d.pdf
FDC6561AN
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.5A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 4641 Stücke:
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17+1.07 EUR
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FDD5614P fdd5614p-d.pdf
FDD5614P
Hersteller: onsemi
Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 30 V
Produkt ist nicht verfügbar
FDD6690A fdd6690a-d.pdf
FDD6690A
Hersteller: onsemi
Description: MOSFET N-CH 30V 12A/46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 3.3W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Produkt ist nicht verfügbar
FDG6301N fdg6301n-d.pdf
FDG6301N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 67927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.59 EUR
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FDG6303N fdg6303n-d.pdf
FDG6303N
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 500MA SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 60100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
30+ 0.59 EUR
100+ 0.35 EUR
500+ 0.33 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
FDG6304P fdg6304p-d.pdf
FDG6304P
Hersteller: onsemi
Description: MOSFET 2P-CH 25V 0.41A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 410mA
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 410mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
23+ 0.77 EUR
100+ 0.53 EUR
Mindestbestellmenge: 20
FDG6322C fdg6322c-d.pdf
FDG6322C
Hersteller: onsemi
Description: MOSFET N/P-CH 25V 0.22A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
auf Bestellung 28061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 25
FDLL300 ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
FDLL300
Hersteller: onsemi
Description: DIODE GEN PURP 125V 200MA LL34
Produkt ist nicht verfügbar
FDN306P FAIRS19378-1.pdf?t.download=true&u=5oefqw
FDN306P
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 6 V
auf Bestellung 51666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.33 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 25
FDN336P fdn336p-d.pdf
FDN336P
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.3A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 8156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
30+ 0.6 EUR
100+ 0.42 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
FDN339AN ONSM-S-A0003699943-1.pdf?t.download=true&u=5oefqw
FDN339AN
Hersteller: onsemi
Description: MOSFET N-CH 20V 3A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
auf Bestellung 150716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.66 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
FDN357N fdn357n-d.pdf
FDN357N
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.9A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 10 V
auf Bestellung 16296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
25+ 0.71 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
FDN358P FAIRS20312-1.pdf?t.download=true&u=5oefqw
FDN358P
Hersteller: onsemi
Description: MOSFET P-CH 30V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 15 V
auf Bestellung 2621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
26+ 0.68 EUR
100+ 0.47 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 23
FDN359AN fdn359an-d.pdf
FDN359AN
Hersteller: onsemi
Description: MOSFET N-CH 30V 2.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
auf Bestellung 30858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.66 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
FDN360P fdn360p-d.pdf
FDN360P
Hersteller: onsemi
Description: MOSFET P-CH 30V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
auf Bestellung 77801 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
28+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 21
FDN5618P fdn5618p-d.pdf
FDN5618P
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.25A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
auf Bestellung 19296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
FDN5630 fdn5630-d.pdf
FDN5630
Hersteller: onsemi
Description: MOSFET N-CH 60V 1.7A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V
auf Bestellung 24110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
FDS2572 FAIRS45105-1.pdf?t.download=true&u=5oefqw
FDS2572
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 57050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.69 EUR
10+ 2.23 EUR
100+ 1.78 EUR
500+ 1.5 EUR
1000+ 1.28 EUR
Mindestbestellmenge: 7
FDS3672 fds3672-d.pdf
FDS3672
Hersteller: onsemi
Description: MOSFET N-CH 100V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2015 pF @ 25 V
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.02 EUR
100+ 1.57 EUR
500+ 1.33 EUR
Mindestbestellmenge: 8
FDS4435 FDS4435.pdf
FDS4435
Hersteller: onsemi
Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1604 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
FDS4465 fds4465-d.pdf
FDS4465
Hersteller: onsemi
Description: MOSFET P-CH 20V 13.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
auf Bestellung 11990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.71 EUR
10+ 2.21 EUR
100+ 1.72 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 7
FDS4935A fds4935a-d.pdf
FDS4935A
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 29718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.64 EUR
14+ 1.34 EUR
100+ 1.04 EUR
500+ 0.88 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 11
FDS5670 fds5670-d.pdf
FDS5670
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V
Produkt ist nicht verfügbar
FDS6675 fds6675-d.pdf
FDS6675
Hersteller: onsemi
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
FDS6690A fds6690a-d.pdf
FDS6690A
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 15 V
auf Bestellung 6315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.28 EUR
16+ 1.11 EUR
100+ 0.77 EUR
500+ 0.64 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 14
FDS6875 fds6875-d.pdf
FDS6875
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.11 EUR
11+ 1.73 EUR
100+ 1.35 EUR
500+ 1.14 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 9
FDS6898A FDS6898A.pdf
FDS6898A
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 9.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A
Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 12002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.72 EUR
13+ 1.42 EUR
100+ 1.1 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
Mindestbestellmenge: 11
FDS6912A ONSM-S-A0003584182-1.pdf?t.download=true&u=5oefqw
FDS6912A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
16+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 14
FDS6975 ONSM-S-A0003584103-1.pdf?t.download=true&u=5oefqw
FDS6975
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.39 EUR
10+ 1.96 EUR
100+ 1.52 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 8
FDS6990A fds6990a-d.pdf
FDS6990A
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FDS9926A fds9926a-d.pdf
FDS9926A
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 33153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.13 EUR
18+ 0.99 EUR
100+ 0.68 EUR
500+ 0.57 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 16
FQB34N20TM-AM002 fqb34n20-d.pdf
FQB34N20TM-AM002
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
FQB55N10TM ONSM-S-A0003590373-1.pdf?t.download=true&u=5oefqw
FQB55N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 55A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.82 EUR
10+ 3.18 EUR
100+ 2.53 EUR
Mindestbestellmenge: 5
FQD17P06TF
FQD17P06TF
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
FQD2N80TM fqd2n80-d.pdf
FQD2N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 1.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
FQT7N10LTF fqt7n10ltf-d.pdf
FQT7N10LTF
Hersteller: onsemi
Description: MOSFET N-CH 100V 1.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
auf Bestellung 12048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.59 EUR
1000+ 0.5 EUR
2000+ 0.44 EUR
Mindestbestellmenge: 16
FSA3157P6X ONSM-S-A0003544200-1.pdf?t.download=true&u=5oefqw
FSA3157P6X
Hersteller: onsemi
Description: IC SWITCH SPDT X 1 15OHM SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: SC-88 (SC-70-6)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.7ns, 3.8ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
HMHAA280R1 hmhaa280-d.pdf
HMHAA280R1
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
HUF75645S3ST FAIRS45737-1.pdf?t.download=true&u=5oefqw
HUF75645S3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
auf Bestellung 14970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.1 EUR
10+ 4.28 EUR
100+ 3.47 EUR
Mindestbestellmenge: 4
KSH122TF KSH122(I).pdf
KSH122TF
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Produkt ist nicht verfügbar
KST42MTF KST42-KST43.pdf
KST42MTF
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
KST92MTF DS_488_KST92.pdf
KST92MTF
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
MB4S ONSM-S-A0003523414-1.pdf?t.download=true&u=5oefqw
MB4S
Hersteller: onsemi
Description: BRIDGE RECT 1P 400V 500MA 4SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 108902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
28+ 0.63 EUR
100+ 0.38 EUR
500+ 0.35 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 22
MBRS340
MBRS340
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 4A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Produkt ist nicht verfügbar
MM74HC164MX ONSM-S-A0003590464-1.pdf?t.download=true&u=5oefqw
MM74HC164MX
Hersteller: onsemi
Description: IC REGISTER SER/PAR I/O 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 23267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
23+ 0.77 EUR
25+ 0.72 EUR
100+ 0.53 EUR
250+ 0.45 EUR
500+ 0.43 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 20
MM74HC4052MX MM74HC405x.pdf
MM74HC4052MX
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 35MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
MM74HCT04MX ONSM-S-A0003587704-1.pdf?t.download=true&u=5oefqw
MM74HCT04MX
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4.8mA, 4.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 20ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
23+ 0.77 EUR
25+ 0.71 EUR
100+ 0.53 EUR
250+ 0.45 EUR
500+ 0.43 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 20
MM74HCU04MX mm74hcu04-d.pdf
MM74HCU04MX
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 7.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 14ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 6236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
24+ 0.74 EUR
26+ 0.69 EUR
100+ 0.51 EUR
250+ 0.43 EUR
500+ 0.41 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 21
MMBD1403 mmbd1405-d.pdf
MMBD1403
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
auf Bestellung 118328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
45+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 31
MMBD1504A mmbd1501-d.pdf
MMBD1504A
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
auf Bestellung 286748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
45+ 0.4 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 31
MMBD1505A mmbd1501-d.pdf
MMBD1505A
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
auf Bestellung 36713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
42+ 0.43 EUR
100+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 29
MMBD4148se mmbd4148se-d.pdf
MMBD4148se
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
MMBFJ112 ONSM-S-A0003590801-1.pdf?t.download=true&u=5oefqw
MMBFJ112
Hersteller: onsemi
Description: JFET N-CH 35V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 350 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 68236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
35+ 0.51 EUR
100+ 0.26 EUR
500+ 0.23 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 25
NC7NZ34K8X nc7nz34-d.pdf
NC7NZ34K8X
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Part Status: Obsolete
Produkt ist nicht verfügbar
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