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FDD6690A ONSEMI
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; 56W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
56+ | 1.29 EUR |
63+ | 1.14 EUR |
85+ | 0.84 EUR |
91+ | 0.79 EUR |
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Technische Details FDD6690A ONSEMI
Description: MOSFET N-CH 30V 12A/46A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V, Power Dissipation (Max): 3.3W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V.
Weitere Produktangebote FDD6690A nach Preis ab 0.8 EUR bis 2.91 EUR
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FDD6690A | Hersteller : onsemi / Fairchild |
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auf Bestellung 162 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD6690A | Hersteller : Fairchild |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD6690A Produktcode: 183764 |
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Produkt ist nicht verfügbar
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FDD6690A | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDD6690A | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Power Dissipation (Max): 3.3W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDD6690A | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Power Dissipation (Max): 3.3W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
Produkt ist nicht verfügbar |