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FDMC8884 FDMC8884 onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
Produkt ist nicht verfügbar
FDMC8884 FDMC8884 onsemi FDMC8884_RevE4_Jun2014.pdf Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
auf Bestellung 24916 Stücke:
Lieferzeit 10-14 Tag (e)
919+0.54 EUR
Mindestbestellmenge: 919
NSR02301MX4T5G NSR02301MX4T5G onsemi nsr02301-d.pdf Description: 01005_TRENCH_SCHOTTKY_30V_200MA_
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 11 ns
Technology: Schottky
Capacitance @ Vr, F: 19pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X4DFN (0.45x0.24)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
NSR02301MX4T5G NSR02301MX4T5G onsemi nsr02301-d.pdf Description: 01005_TRENCH_SCHOTTKY_30V_200MA_
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 11 ns
Technology: Schottky
Capacitance @ Vr, F: 19pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X4DFN (0.45x0.24)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
BC847AMTF BC847AMTF onsemi ONSM-S-A0004900064-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
auf Bestellung 673132 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.049 EUR
Mindestbestellmenge: 11539
BC847ALT1 BC847ALT1 onsemi BC846ALT1_Rev6.pdf Description: TRANS NPN 45V 100MA SOT23
Packaging: Bulk
auf Bestellung 23905 Stücke:
Lieferzeit 10-14 Tag (e)
6662+0.082 EUR
Mindestbestellmenge: 6662
P6KE39ARL P6KE39ARL onsemi P6KE6.8A_Series.pdf Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
MC74HCT4053ADR2G MC74HCT4053ADR2G onsemi mc74hct4051a-d.pdf Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 130pF
Current - Leakage (IS(off)) (Max): 200nA
Number of Circuits: 3
Produkt ist nicht verfügbar
MC74HCT4053ADR2G MC74HCT4053ADR2G onsemi mc74hct4051a-d.pdf Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 130pF
Current - Leakage (IS(off)) (Max): 200nA
Number of Circuits: 3
Produkt ist nicht verfügbar
1.5KE12ARL4 1.5KE12ARL4 onsemi 1N6267A_Series.pdf Description: TVS DIODE 10.2VWM 16.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1567+0.31 EUR
Mindestbestellmenge: 1567
CAT3644HV3 onsemi ONSMS38987-1.pdf?t.download=true&u=5oefqw Description: IC LED DRVR RGLTR SGL WR 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 800kHz ~ 1.6MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 25mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
auf Bestellung 1326 Stücke:
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1326+0.47 EUR
Mindestbestellmenge: 1326
CAT3604HS4-TE13 onsemi CATSS00900-1.pdf?t.download=true&u=5oefqw Description: IC LED DRV RGLTR PWM 30MA 16TQFN
Packaging: Bulk
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
807+0.6 EUR
Mindestbestellmenge: 807
KA278R33CTU KA278R33CTU onsemi KA278RxxC_Series.pdf Description: IC REG LINEAR 3.3V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
BD435G BD435G onsemi bd437-d.pdf Description: TRANS NPN 32V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
auf Bestellung 8102 Stücke:
Lieferzeit 10-14 Tag (e)
858+0.58 EUR
Mindestbestellmenge: 858
FAD8253MX-1 FAD8253MX-1 onsemi fad8253-d.pdf Description: 1200V 2.5A HALF-BRIDGE GATE DRIV
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 18V
Applications: General Purpose
Current - Output / Channel: 2.5A, 3.4A
Current - Peak Output: 2.5A, 3.4A
Technology: IGBT
Voltage - Load: 10.6V ~ 22V
Supplier Device Package: 14-SOIC
Fault Protection: Current Limiting, Shoot Through, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MPSA05 MPSA05 onsemi MPSA05%2CMMBTA05.pdf Description: TRANS NPN GP BIPO LP 60V TO-92
Packaging: Bulk
Produkt ist nicht verfügbar
BAT54CLT1 BAT54CLT1 onsemi bat54clt1-d.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 281978 Stücke:
Lieferzeit 10-14 Tag (e)
4438+0.12 EUR
Mindestbestellmenge: 4438
1N4738A-T50R 1N4738A-T50R onsemi ONSM-S-A0003585147-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 8.2V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
5998+0.082 EUR
Mindestbestellmenge: 5998
NCP1240AD065R2G NCP1240AD065R2G onsemi ncp1240-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
532+0.91 EUR
Mindestbestellmenge: 532
NCP1240GD065R2G NCP1240GD065R2G onsemi ncp1240g-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 13684 Stücke:
Lieferzeit 10-14 Tag (e)
532+0.91 EUR
Mindestbestellmenge: 532
NCP1240FD065R2G NCP1240FD065R2G onsemi ncp1240-d.pdf Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 4688 Stücke:
Lieferzeit 10-14 Tag (e)
532+0.91 EUR
Mindestbestellmenge: 532
MT9M114EBLSTCZ-CR MT9M114EBLSTCZ-CR onsemi mt9m114-d.pdf Description: IMAGE SENSOR CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
Produkt ist nicht verfügbar
FFSB3065B-F085 FFSB3065B-F085 onsemi ffsb3065b-f085-d.pdf Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+7.31 EUR
Mindestbestellmenge: 800
FFSB3065B-F085 FFSB3065B-F085 onsemi ffsb3065b-f085-d.pdf Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1320 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.6 EUR
10+ 9.95 EUR
100+ 8.29 EUR
Mindestbestellmenge: 2
AR0144CSSM00SUKA0-CPBR AR0144CSSM00SUKA0-CPBR onsemi AR0144CS_Web.pdf Description: IMAGE SENSOR CMOS ODCSP-69
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
auf Bestellung 2043 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.88 EUR
AP1302CSSL00SMGA0-DR onsemi Description: IMAGE SIGNAL PROCESSOR
Packaging: Tray
Package / Case: 120-WFBGA
Mounting Type: Surface Mount
Function: Processor
Supplier Device Package: 120-VFBGA (6.5x6.5)
auf Bestellung 3063 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.89 EUR
10+ 16.54 EUR
25+ 15.66 EUR
80+ 13.49 EUR
440+ 12.62 EUR
ASX340AT3C00XPED0-DPBR ASX340AT3C00XPED0-DPBR onsemi asx340at-d.pdf Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 1074 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.5 EUR
10+ 20.18 EUR
25+ 19.12 EUR
80+ 16.47 EUR
440+ 15.4 EUR
ASX340AT2C00XPED0-DRBR ASX340AT2C00XPED0-DRBR onsemi asx340at-d.pdf Description: SENSOR IMAGE COLOR CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.77 EUR
10+ 20.39 EUR
25+ 19.32 EUR
80+ 16.64 EUR
440+ 15.56 EUR
NDSH25170A NDSH25170A onsemi ndsh25170a-d.pdf Description: DIODE SIL CARB 1.7KV 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2025pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.33 EUR
30+ 21.32 EUR
120+ 20.06 EUR
510+ 18.18 EUR
NTBG015N065SC1 NTBG015N065SC1 onsemi ntbg015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+29.01 EUR
Mindestbestellmenge: 800
NTBG015N065SC1 NTBG015N065SC1 onsemi ntbg015n065sc1-d.pdf Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.75 EUR
10+ 38.87 EUR
100+ 34 EUR
FFSH50120A FFSH50120A onsemi ffsh50120a-d.pdf Description: DIODE SIL CARB 1.2KV 77A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2560pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 1447 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.63 EUR
30+ 27.05 EUR
120+ 25.36 EUR
510+ 21.64 EUR
AR0521SR2M09SURA0-DP AR0521SR2M09SURA0-DP onsemi ar0521?pdf=Y Description: 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.07 EUR
AR0130CSSM00SPCA0-DRBR AR0130CSSM00SPCA0-DRBR onsemi AR0130CS.pdf Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
auf Bestellung 3660 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.82 EUR
10+ 28.34 EUR
25+ 26.85 EUR
80+ 23.12 EUR
440+ 21.63 EUR
AR1335CSSC11SMKA0-CP AR1335CSSC11SMKA0-CP onsemi ar1335?pdf=Y Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
auf Bestellung 1892 Stücke:
Lieferzeit 10-14 Tag (e)
1+37.05 EUR
10+ 29.32 EUR
25+ 27.77 EUR
80+ 23.92 EUR
440+ 22.37 EUR
AR0134CSSC00SPCA0-DPBR AR0134CSSC00SPCA0-DPBR onsemi ar0134cs-d.pdf Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
auf Bestellung 1663 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.52 EUR
10+ 29.77 EUR
AR0521SR2C09SURA0-DR AR0521SR2C09SURA0-DR onsemi ar0521?pdf=Y Description: IMAGE SENSOR 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.97 EUR
10+ 30.16 EUR
AR0521SR2C09SURA0-DP AR0521SR2C09SURA0-DP onsemi ar0521?pdf=Y Description: 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1508 Stücke:
Lieferzeit 10-14 Tag (e)
1+52.22 EUR
10+ 43.51 EUR
25+ 38.54 EUR
80+ 37.3 EUR
440+ 34.81 EUR
AR0135CS2M00SUEA0-DPBR AR0135CS2M00SUEA0-DPBR onsemi ar0135cs?pdf=Y Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
auf Bestellung 3062 Stücke:
Lieferzeit 10-14 Tag (e)
1+53.96 EUR
10+ 44.96 EUR
25+ 39.82 EUR
80+ 38.54 EUR
440+ 35.97 EUR
AR0522SRSM09SURA0-DP AR0522SRSM09SURA0-DP onsemi AR0522_Web.pdf Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.33 EUR
10+ 45.27 EUR
25+ 40.09 EUR
80+ 38.8 EUR
440+ 36.21 EUR
AR0234CSSC28SUKA0-CP AR0234CSSC28SUKA0-CP onsemi ar0234cs?pdf=Y Description: 2MP 1/3 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 2839 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.12 EUR
10+ 57.6 EUR
25+ 51.02 EUR
80+ 49.37 EUR
AR0234CSSC00SUKA0-CP AR0234CSSC00SUKA0-CP onsemi ar0234cs?pdf=Y Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 1905 Stücke:
Lieferzeit 10-14 Tag (e)
1+69.82 EUR
10+ 58.18 EUR
25+ 51.53 EUR
80+ 49.87 EUR
BSS138 BSS138 onsemi bss138-d.pdf Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 189000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.091 EUR
9000+ 0.075 EUR
30000+ 0.074 EUR
75000+ 0.066 EUR
150000+ 0.058 EUR
Mindestbestellmenge: 3000
BSS138 BSS138 onsemi bss138-d.pdf Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 199558 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
45+ 0.4 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 31
NXH040F120MNF1PTG NXH040F120MNF1PTG onsemi nxh040f120mnf1-d.pdf Description: SIC 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
NXH040F120MNF1PG NXH040F120MNF1PG onsemi nxh040f120mnf1-d.pdf Description: SIC 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
NXH020F120MNF1PG NXH020F120MNF1PG onsemi nxh020f120mnf1-d.pdf Description: SIC 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
NXH020F120MNF1PTG onsemi nxh020f120mnf1-d.pdf Description: SIC 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.033 EUR
Mindestbestellmenge: 10000
1N456ATR 1N456ATR onsemi 1n456a-d.pdf Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 39952 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
105+ 0.17 EUR
214+ 0.083 EUR
500+ 0.069 EUR
1000+ 0.048 EUR
2000+ 0.041 EUR
5000+ 0.038 EUR
Mindestbestellmenge: 72
NTHL040N120M3S NTHL040N120M3S onsemi nthl040n120m3s-d.pdf Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.89 EUR
30+ 16.91 EUR
120+ 15.91 EUR
NTH4L040N120SC1 NTH4L040N120SC1 onsemi nth4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Produkt ist nicht verfügbar
NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
800+28.64 EUR
Mindestbestellmenge: 800
NVBG040N120SC1 NVBG040N120SC1 onsemi nvbg040n120sc1-d.pdf Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 200315 Stücke:
Lieferzeit 10-14 Tag (e)
1+43.19 EUR
10+ 38.38 EUR
100+ 33.57 EUR
NVH4L040N120M3S NVH4L040N120M3S onsemi nvh4l040n120m3s-d.pdf Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.75 EUR
30+ 25.71 EUR
120+ 24.2 EUR
NVHL040N120SC1 NVHL040N120SC1 onsemi nvhl040n120sc1-d.pdf Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.04 EUR
30+ 25.57 EUR
NVH4L040N120SC1 NVH4L040N120SC1 onsemi nvh4l040n120sc1-d.pdf Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1256 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.11 EUR
30+ 26.55 EUR
NTH4L040N120M3S NTH4L040N120M3S onsemi nth4l040n120m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.98 EUR
30+ 17.79 EUR
120+ 16.74 EUR
NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+21.22 EUR
Mindestbestellmenge: 800
NVBG040N120M3S NVBG040N120M3S onsemi NVBG040N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.75 EUR
10+ 27.08 EUR
100+ 23.42 EUR
FDMC8884 FDMC8884_RevE4_Jun2014.pdf
FDMC8884
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
Produkt ist nicht verfügbar
FDMC8884 FDMC8884_RevE4_Jun2014.pdf
FDMC8884
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/15A 8MLP
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 15 V
auf Bestellung 24916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
919+0.54 EUR
Mindestbestellmenge: 919
NSR02301MX4T5G nsr02301-d.pdf
NSR02301MX4T5G
Hersteller: onsemi
Description: 01005_TRENCH_SCHOTTKY_30V_200MA_
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 11 ns
Technology: Schottky
Capacitance @ Vr, F: 19pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X4DFN (0.45x0.24)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
NSR02301MX4T5G nsr02301-d.pdf
NSR02301MX4T5G
Hersteller: onsemi
Description: 01005_TRENCH_SCHOTTKY_30V_200MA_
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 11 ns
Technology: Schottky
Capacitance @ Vr, F: 19pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X4DFN (0.45x0.24)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Produkt ist nicht verfügbar
BC847AMTF ONSM-S-A0004900064-1.pdf?t.download=true&u=5oefqw
BC847AMTF
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
auf Bestellung 673132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11539+0.049 EUR
Mindestbestellmenge: 11539
BC847ALT1 BC846ALT1_Rev6.pdf
BC847ALT1
Hersteller: onsemi
Description: TRANS NPN 45V 100MA SOT23
Packaging: Bulk
auf Bestellung 23905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6662+0.082 EUR
Mindestbestellmenge: 6662
P6KE39ARL P6KE6.8A_Series.pdf
P6KE39ARL
Hersteller: onsemi
Description: TVS DIODE 33.3VWM 53.9VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
MC74HCT4053ADR2G mc74hct4051a-d.pdf
MC74HCT4053ADR2G
Hersteller: onsemi
Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 130pF
Current - Leakage (IS(off)) (Max): 200nA
Number of Circuits: 3
Produkt ist nicht verfügbar
MC74HCT4053ADR2G mc74hct4051a-d.pdf
MC74HCT4053ADR2G
Hersteller: onsemi
Description: IC MUX TRPL 2:1 100OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 130pF
Current - Leakage (IS(off)) (Max): 200nA
Number of Circuits: 3
Produkt ist nicht verfügbar
1.5KE12ARL4 1N6267A_Series.pdf
1.5KE12ARL4
Hersteller: onsemi
Description: TVS DIODE 10.2VWM 16.7VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1567+0.31 EUR
Mindestbestellmenge: 1567
CAT3644HV3 ONSMS38987-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC LED DRVR RGLTR SGL WR 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 800kHz ~ 1.6MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 25mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Single-Wire
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
auf Bestellung 1326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1326+0.47 EUR
Mindestbestellmenge: 1326
CAT3604HS4-TE13 CATSS00900-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC LED DRV RGLTR PWM 30MA 16TQFN
Packaging: Bulk
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Camera Flash
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
807+0.6 EUR
Mindestbestellmenge: 807
KA278R33CTU KA278RxxC_Series.pdf
KA278R33CTU
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
BD435G bd437-d.pdf
BD435G
Hersteller: onsemi
Description: TRANS NPN 32V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
auf Bestellung 8102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
858+0.58 EUR
Mindestbestellmenge: 858
FAD8253MX-1 fad8253-d.pdf
FAD8253MX-1
Hersteller: onsemi
Description: 1200V 2.5A HALF-BRIDGE GATE DRIV
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 18V
Applications: General Purpose
Current - Output / Channel: 2.5A, 3.4A
Current - Peak Output: 2.5A, 3.4A
Technology: IGBT
Voltage - Load: 10.6V ~ 22V
Supplier Device Package: 14-SOIC
Fault Protection: Current Limiting, Shoot Through, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
MPSA05 MPSA05%2CMMBTA05.pdf
MPSA05
Hersteller: onsemi
Description: TRANS NPN GP BIPO LP 60V TO-92
Packaging: Bulk
Produkt ist nicht verfügbar
BAT54CLT1 bat54clt1-d.pdf
BAT54CLT1
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 281978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4438+0.12 EUR
Mindestbestellmenge: 4438
1N4738A-T50R ONSM-S-A0003585147-1.pdf?t.download=true&u=5oefqw
1N4738A-T50R
Hersteller: onsemi
Description: DIODE ZENER 8.2V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5998+0.082 EUR
Mindestbestellmenge: 5998
NCP1240AD065R2G ncp1240-d.pdf
NCP1240AD065R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
532+0.91 EUR
Mindestbestellmenge: 532
NCP1240GD065R2G ncp1240g-d.pdf
NCP1240GD065R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 13684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
532+0.91 EUR
Mindestbestellmenge: 532
NCP1240FD065R2G ncp1240-d.pdf
NCP1240FD065R2G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.3V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
auf Bestellung 4688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
532+0.91 EUR
Mindestbestellmenge: 532
MT9M114EBLSTCZ-CR mt9m114-d.pdf
MT9M114EBLSTCZ-CR
Hersteller: onsemi
Description: IMAGE SENSOR CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
Produkt ist nicht verfügbar
FFSB3065B-F085 ffsb3065b-f085-d.pdf
FFSB3065B-F085
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+7.31 EUR
Mindestbestellmenge: 800
FFSB3065B-F085 ffsb3065b-f085-d.pdf
FFSB3065B-F085
Hersteller: onsemi
Description: DIODE SIL CARBIDE 650V 73A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1280pF @ 1V, 100kHz
Current - Average Rectified (Io): 73A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 1320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.6 EUR
10+ 9.95 EUR
100+ 8.29 EUR
Mindestbestellmenge: 2
AR0144CSSM00SUKA0-CPBR AR0144CS_Web.pdf
AR0144CSSM00SUKA0-CPBR
Hersteller: onsemi
Description: IMAGE SENSOR CMOS ODCSP-69
Packaging: Tray
Package / Case: 69-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 69-ODCSP (5.55x5.57)
Frames per Second: 60.0
auf Bestellung 2043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.88 EUR
AP1302CSSL00SMGA0-DR
Hersteller: onsemi
Description: IMAGE SIGNAL PROCESSOR
Packaging: Tray
Package / Case: 120-WFBGA
Mounting Type: Surface Mount
Function: Processor
Supplier Device Package: 120-VFBGA (6.5x6.5)
auf Bestellung 3063 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.89 EUR
10+ 16.54 EUR
25+ 15.66 EUR
80+ 13.49 EUR
440+ 12.62 EUR
ASX340AT3C00XPED0-DPBR asx340at-d.pdf
ASX340AT3C00XPED0-DPBR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
auf Bestellung 1074 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+25.5 EUR
10+ 20.18 EUR
25+ 19.12 EUR
80+ 16.47 EUR
440+ 15.4 EUR
ASX340AT2C00XPED0-DRBR asx340at-d.pdf
ASX340AT2C00XPED0-DRBR
Hersteller: onsemi
Description: SENSOR IMAGE COLOR CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 728H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+25.77 EUR
10+ 20.39 EUR
25+ 19.32 EUR
80+ 16.64 EUR
440+ 15.56 EUR
NDSH25170A ndsh25170a-d.pdf
NDSH25170A
Hersteller: onsemi
Description: DIODE SIL CARB 1.7KV 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2025pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+26.33 EUR
30+ 21.32 EUR
120+ 20.06 EUR
510+ 18.18 EUR
NTBG015N065SC1 ntbg015n065sc1-d.pdf
NTBG015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+29.01 EUR
Mindestbestellmenge: 800
NTBG015N065SC1 ntbg015n065sc1-d.pdf
NTBG015N065SC1
Hersteller: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4689 pF @ 325 V
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+43.75 EUR
10+ 38.87 EUR
100+ 34 EUR
FFSH50120A ffsh50120a-d.pdf
FFSH50120A
Hersteller: onsemi
Description: DIODE SIL CARB 1.2KV 77A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2560pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 1447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+32.63 EUR
30+ 27.05 EUR
120+ 25.36 EUR
510+ 21.64 EUR
AR0521SR2M09SURA0-DP ar0521?pdf=Y
AR0521SR2M09SURA0-DP
Hersteller: onsemi
Description: 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+33.07 EUR
AR0130CSSM00SPCA0-DRBR AR0130CS.pdf
AR0130CSSM00SPCA0-DRBR
Hersteller: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
auf Bestellung 3660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+35.82 EUR
10+ 28.34 EUR
25+ 26.85 EUR
80+ 23.12 EUR
440+ 21.63 EUR
AR1335CSSC11SMKA0-CP ar1335?pdf=Y
AR1335CSSC11SMKA0-CP
Hersteller: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30.0
auf Bestellung 1892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+37.05 EUR
10+ 29.32 EUR
25+ 27.77 EUR
80+ 23.92 EUR
440+ 22.37 EUR
AR0134CSSC00SPCA0-DPBR ar0134cs-d.pdf
AR0134CSSC00SPCA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 54.0
auf Bestellung 1663 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+35.52 EUR
10+ 29.77 EUR
AR0521SR2C09SURA0-DR ar0521?pdf=Y
AR0521SR2C09SURA0-DR
Hersteller: onsemi
Description: IMAGE SENSOR 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+35.97 EUR
10+ 30.16 EUR
AR0521SR2C09SURA0-DP ar0521?pdf=Y
AR0521SR2C09SURA0-DP
Hersteller: onsemi
Description: 5MP 1/2 CIS SO
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+52.22 EUR
10+ 43.51 EUR
25+ 38.54 EUR
80+ 37.3 EUR
440+ 34.81 EUR
AR0135CS2M00SUEA0-DPBR ar0135cs?pdf=Y
AR0135CS2M00SUEA0-DPBR
Hersteller: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
auf Bestellung 3062 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+53.96 EUR
10+ 44.96 EUR
25+ 39.82 EUR
80+ 38.54 EUR
440+ 35.97 EUR
AR0522SRSM09SURA0-DP AR0522_Web.pdf
AR0522SRSM09SURA0-DP
Hersteller: onsemi
Description: IMAGE SENSOR CMOS 5MP 52PLCC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 52-PLCC (12x12)
Frames per Second: 60.0
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+54.33 EUR
10+ 45.27 EUR
25+ 40.09 EUR
80+ 38.8 EUR
440+ 36.21 EUR
AR0234CSSC28SUKA0-CP ar0234cs?pdf=Y
AR0234CSSC28SUKA0-CP
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 2839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+69.12 EUR
10+ 57.6 EUR
25+ 51.02 EUR
80+ 49.37 EUR
AR0234CSSC00SUKA0-CP ar0234cs?pdf=Y
AR0234CSSC00SUKA0-CP
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 1905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+69.82 EUR
10+ 58.18 EUR
25+ 51.53 EUR
80+ 49.87 EUR
BSS138 bss138-d.pdf
BSS138
Hersteller: onsemi
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 189000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.091 EUR
9000+ 0.075 EUR
30000+ 0.074 EUR
75000+ 0.066 EUR
150000+ 0.058 EUR
Mindestbestellmenge: 3000
BSS138 bss138-d.pdf
BSS138
Hersteller: onsemi
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V
auf Bestellung 199558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
45+ 0.4 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 31
NXH040F120MNF1PTG nxh040f120mnf1-d.pdf
NXH040F120MNF1PTG
Hersteller: onsemi
Description: SIC 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
NXH040F120MNF1PG nxh040f120mnf1-d.pdf
NXH040F120MNF1PG
Hersteller: onsemi
Description: SIC 4N-CH 1200V 30A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
NXH020F120MNF1PG nxh020f120mnf1-d.pdf
NXH020F120MNF1PG
Hersteller: onsemi
Description: SIC 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
NXH020F120MNF1PTG nxh020f120mnf1-d.pdf
Hersteller: onsemi
Description: SIC 4N-CH 1200V 51A 22PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 119W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: 22-PIM (33.8x42.5)
Produkt ist nicht verfügbar
1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.033 EUR
Mindestbestellmenge: 10000
1N456ATR 1n456a-d.pdf
1N456ATR
Hersteller: onsemi
Description: DIODE GEN PURP 30V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 25 V
auf Bestellung 39952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
72+0.25 EUR
105+ 0.17 EUR
214+ 0.083 EUR
500+ 0.069 EUR
1000+ 0.048 EUR
2000+ 0.041 EUR
5000+ 0.038 EUR
Mindestbestellmenge: 72
NTHL040N120M3S nthl040n120m3s-d.pdf
NTHL040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.89 EUR
30+ 16.91 EUR
120+ 15.91 EUR
NTH4L040N120SC1 nth4l040n120sc1-d.pdf
NTH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Produkt ist nicht verfügbar
NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+28.64 EUR
Mindestbestellmenge: 800
NVBG040N120SC1 nvbg040n120sc1-d.pdf
NVBG040N120SC1
Hersteller: onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 200315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+43.19 EUR
10+ 38.38 EUR
100+ 33.57 EUR
NVH4L040N120M3S nvh4l040n120m3s-d.pdf
NVH4L040N120M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -3V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+31.75 EUR
30+ 25.71 EUR
120+ 24.2 EUR
NVHL040N120SC1 nvhl040n120sc1-d.pdf
NVHL040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.04 EUR
30+ 25.57 EUR
NVH4L040N120SC1 nvh4l040n120sc1-d.pdf
NVH4L040N120SC1
Hersteller: onsemi
Description: SICFET N-CH 1200V 58A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 319W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.11 EUR
30+ 26.55 EUR
NTH4L040N120M3S nth4l040n120m3s-d.pdf
NTH4L040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+21.98 EUR
30+ 17.79 EUR
120+ 16.74 EUR
NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+21.22 EUR
Mindestbestellmenge: 800
NVBG040N120M3S NVBG040N120M3S-D.PDF
NVBG040N120M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+30.75 EUR
10+ 27.08 EUR
100+ 23.42 EUR
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