BD435G ON Semiconductor
auf Bestellung 1873 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 312+ | 0.5 EUR |
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Technische Details BD435G ON Semiconductor
Description: TRANS NPN 32V 4A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 36 W.
Weitere Produktangebote BD435G nach Preis ab 0.5 EUR bis 0.58 EUR
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BD435G | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 32V 4A 36000mW 3-Pin(3+Tab) TO-225 Box |
auf Bestellung 1873 Stücke: Lieferzeit 14-21 Tag (e) |
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BD435G | Hersteller : onsemi |
Description: TRANS NPN 32V 4A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 36 W |
auf Bestellung 8102 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD435G | Hersteller : ONSEMI |
Description: ONSEMI - BD435G - TRANS, NPN, 32V, 4A, 150DEG C, 36W tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 8102 Stücke: Lieferzeit 14-21 Tag (e) |
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BD435G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 32V 4A 36000mW 3-Pin(3+Tab) TO-225 Box |
Produkt ist nicht verfügbar |
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BD435G | Hersteller : onsemi |
Description: TRANS NPN 32V 4A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 36 W |
Produkt ist nicht verfügbar |
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BD435G | Hersteller : onsemi |
Bipolar Transistors - BJT BIP NPN 4A 22V |
Produkt ist nicht verfügbar |