Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BC237BZL1 | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
auf Bestellung 124000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC237G | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
auf Bestellung 99346 Stücke: Lieferzeit 10-14 Tag (e) |
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BC237B | onsemi |
![]() Packaging: Bulk |
auf Bestellung 16416 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP3712ASNT3G | onsemi |
![]() Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Applications: General Purpose Technology: Mixed Technology Supplier Device Package: SC-74 Number of Circuits: 1 |
auf Bestellung 140000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNCP3712ASNT1G | onsemi |
![]() Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Applications: General Purpose Technology: Mixed Technology Supplier Device Package: SC-74 Grade: Automotive Number of Circuits: 1 Qualification: AEC-Q101 |
auf Bestellung 71000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNCP3712ASNT3G | onsemi |
![]() Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Applications: General Purpose Technology: Mixed Technology Supplier Device Package: SC-74 Grade: Automotive Number of Circuits: 1 Qualification: AEC-Q101 |
auf Bestellung 79863 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV57101DWR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7A Technology: Capacitive Coupling Current - Output High, Low: 7.8A, 7.1A Voltage - Isolation: 5000Vrms Approval Agency: UL, VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 15ns, 15ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 15ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 0V ~ 32V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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NCD57101DWR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7A Technology: Capacitive Coupling Current - Output High, Low: 7.8A, 7.1A Voltage - Isolation: 5000Vrms Approval Agency: UL, VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 15ns, 15ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 15ns Number of Channels: 1 Voltage - Output Supply: 0V ~ 32V |
auf Bestellung 16980 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2031 | onsemi |
![]() Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 750mA, 7.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-3PB Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 2.5 W |
auf Bestellung 2051 Stücke: Lieferzeit 10-14 Tag (e) |
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MC78M05ACDTRK | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 5V PSRR: 80dB (120Hz) Protection Features: Over Temperature, Short Circuit |
auf Bestellung 4784 Stücke: Lieferzeit 10-14 Tag (e) |
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KA78M05RTF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 5V PSRR: 80dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
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KSB772YSTU | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V Frequency - Transition: 80MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
auf Bestellung 21203 Stücke: Lieferzeit 10-14 Tag (e) |
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LM339DR2 | onsemi |
![]() Packaging: Bulk |
auf Bestellung 9612 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMSZ5254BT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SMMSZ5254BT1G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FCPF1300N80ZYD | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
auf Bestellung 497 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF2250N80Z | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Power Dissipation (Max): 21.9W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3332S-AA | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
auf Bestellung 146194 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3332S | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
auf Bestellung 24642 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC3332T | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 700 mW |
auf Bestellung 4230 Stücke: Lieferzeit 10-14 Tag (e) |
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MJEC15030WP | onsemi |
Description: TRANS NPN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FOD410TV | onsemi |
![]() Packaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL, VDE Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 2mA Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD4116TV | onsemi |
![]() Packaging: Bulk Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 5000Vrms Approval Agency: CSA, UL, VDE Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 1.3mA Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9F002I12STCV-DP | onsemi |
Description: SENSOR IMAGE Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 4384H x 3288V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 13.7 |
Produkt ist nicht verfügbar |
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DM74ALS648NT | onsemi |
Description: IC TXRX NON-INVERT 24DIP Packaging: Bag Package / Case: 24-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Number of Bits per Element: 8 Supplier Device Package: 24-PDIP |
Produkt ist nicht verfügbar |
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NVMFWS020N06CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFWS020N06CT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFWS003P03P8ZT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMFWS1D5N08XT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
Produkt ist nicht verfügbar |
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NTMFWS1D5N08XT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
Produkt ist nicht verfügbar |
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NVMFWS003N10MCT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 4V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS003N10MCT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 4V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS002N10MCLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFWS002N10MCLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NZL6V8AXV3T3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.9A (8/20µs) Voltage - Reverse Standoff (Typ): 4.5V Supplier Device Package: SC-89-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 7.9V Power - Peak Pulse: 73W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NZL5V6ATT1G | onsemi |
Description: TVS DIODE 3VWM 9.97V SC75 SOT416 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.11A (8/20µs) Voltage - Reverse Standoff (Typ): 3V (Max) Supplier Device Package: SC-75, SOT-416 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9.97V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NZL5V6ATT1G | onsemi |
Description: TVS DIODE 3VWM 9.97V SC75 SOT416 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 40pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.11A (8/20µs) Voltage - Reverse Standoff (Typ): 3V (Max) Supplier Device Package: SC-75, SOT-416 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 9.97V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NZ23C5V6ALT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 1V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 24W Power Line Protection: No |
Produkt ist nicht verfügbar |
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NZ23C5V6ALT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 1V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 24W Power Line Protection: No |
Produkt ist nicht verfügbar |
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NZ23C5V6ALT1G | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 1V Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 8V Power - Peak Pulse: 24W Power Line Protection: No |
auf Bestellung 2528500 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVTH16245MTD | onsemi |
![]() Packaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 48-TSSOP |
Produkt ist nicht verfügbar |
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74LVTH16245MTDX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 48-TSSOP |
Produkt ist nicht verfügbar |
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MBR3045PTG | onsemi |
![]() Packaging: Tube Package / Case: TO-218-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SOT-93 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
auf Bestellung 1826 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBZ33VALT1G | onsemi |
Description: TVS DIODES 26VWM 46VC SOT23 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMBZ33VALT1G | onsemi |
Description: TVS DIODES 26VWM 46VC SOT23 Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX79C15 | onsemi |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V |
auf Bestellung 66822 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV74HC138ADTR2G | onsemi |
![]() Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP |
auf Bestellung 30332 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB110N65S3HF | onsemi |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 740µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V |
auf Bestellung 14176 Stücke: Lieferzeit 10-14 Tag (e) |
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BC817-40LT1 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
auf Bestellung 466848 Stücke: Lieferzeit 10-14 Tag (e) |
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BC817-40LT3 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
auf Bestellung 930000 Stücke: Lieferzeit 10-14 Tag (e) |
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FMS6501AMTC28X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Switch Matrix Voltage - Supply: 3.13V ~ 5.25V Applications: Consumer Video Supplier Device Package: 28-TSSOP Control Interface: I2C |
Produkt ist nicht verfügbar |
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MMBD6050LT1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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MMBD6050LT3 | onsemi |
![]() Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MMBD6050 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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MMBD6050 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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MMBD6050 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
auf Bestellung 31302 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0820ATSC18XMEA0-TRBR | onsemi |
Description: 8MP 1/2 CIS SO Packaging: Tape & Reel (TR) Package / Case: 95-FBGA Type: CMOS Operating Temperature: -40°C ~ 105°C (TA) Pixel Size: 2.1µm x 2.1µm Active Pixel Array: 3848H x 2168V Supplier Device Package: 95-IBGA (11x8) Frames per Second: 40 |
auf Bestellung 1400 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0820ATSC18XMEA0-DPBR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 95-FBGA Type: CMOS Pixel Size: 2.1µm x 2.1µm Active Pixel Array: 3848H x 2168V Supplier Device Package: 95-IBGA (11x8) Frames per Second: 40 |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0820ATSC18XMEA0-DPBR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 95-FBGA Type: CMOS Pixel Size: 2.1µm x 2.1µm Active Pixel Array: 3848H x 2168V Supplier Device Package: 95-IBGA (11x8) Frames per Second: 40 |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0820ATSC18XMEA0-DRBR | onsemi |
Description: 8MP 1/2 CIS SO Packaging: Tray Package / Case: 95-FBGA Type: CMOS Operating Temperature: -40°C ~ 105°C (TA) Pixel Size: 2.1µm x 2.1µm Active Pixel Array: 3848H x 2168V Supplier Device Package: 95-IBGA (11x8) Frames per Second: 40 |
auf Bestellung 2699 Stücke: Lieferzeit 10-14 Tag (e) |
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BC237BZL1 |
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Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
auf Bestellung 124000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
BC237G |
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Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
auf Bestellung 99346 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2959+ | 0.16 EUR |
BC237B |
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auf Bestellung 16416 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
NCP3712ASNT3G |
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Hersteller: onsemi
Description: TVS DEVICE MIXED SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: SC-74
Number of Circuits: 1
Description: TVS DEVICE MIXED SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: SC-74
Number of Circuits: 1
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1216+ | 0.41 EUR |
SZNCP3712ASNT1G |
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Hersteller: onsemi
Description: TVS DEVICE MIXED SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: SC-74
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q101
Description: TVS DEVICE MIXED SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: SC-74
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q101
auf Bestellung 71000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1428+ | 0.34 EUR |
SZNCP3712ASNT3G |
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Hersteller: onsemi
Description: TVS DEVICE MIXED SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: SC-74
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q101
Description: TVS DEVICE MIXED SC74
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Applications: General Purpose
Technology: Mixed Technology
Supplier Device Package: SC-74
Grade: Automotive
Number of Circuits: 1
Qualification: AEC-Q101
auf Bestellung 79863 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1285+ | 0.38 EUR |
NCV57101DWR2G |
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Hersteller: onsemi
Description: ISOLATED GATE DRIVER IN SOIC16WB
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 15ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
Qualification: AEC-Q100
Description: ISOLATED GATE DRIVER IN SOIC16WB
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 15ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
NCD57101DWR2G |
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Hersteller: onsemi
Description: ISOLATED GATE DRIVER IN SOIC16WB
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 15ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
Description: ISOLATED GATE DRIVER IN SOIC16WB
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.8A, 7.1A
Voltage - Isolation: 5000Vrms
Approval Agency: UL, VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 15ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
auf Bestellung 16980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.77 EUR |
10+ | 4.3 EUR |
25+ | 4.06 EUR |
100+ | 3.34 EUR |
250+ | 3 EUR |
500+ | 2.89 EUR |
2SA2031 |
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Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 750mA, 7.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2.5 W
Description: PNP SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 750mA, 7.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-3PB
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2.5 W
auf Bestellung 2051 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
683+ | 0.71 EUR |
MC78M05ACDTRK |
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Hersteller: onsemi
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 4784 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
987+ | 0.49 EUR |
KA78M05RTF |
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Hersteller: onsemi
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
KSB772YSTU |
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Hersteller: onsemi
Description: TRANS PNP 30V 3A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 3A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
auf Bestellung 21203 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1455+ | 0.34 EUR |
LM339DR2 |
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auf Bestellung 9612 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3806+ | 0.13 EUR |
SMMSZ5254BT1G |
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Hersteller: onsemi
Description: DIODE ZENER 27V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SMMSZ5254BT1G |
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Hersteller: onsemi
Description: DIODE ZENER 27V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Description: DIODE ZENER 27V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FCPF1300N80ZYD |
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Hersteller: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
auf Bestellung 497 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
281+ | 1.74 EUR |
FCPF2250N80Z |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 2.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Description: MOSFET N-CH 800V 2.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.51 EUR |
10+ | 3.78 EUR |
100+ | 3.05 EUR |
500+ | 2.72 EUR |
1000+ | 2.32 EUR |
2000+ | 2.19 EUR |
2SC3332S-AA |
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Hersteller: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
auf Bestellung 146194 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1665+ | 0.29 EUR |
2SC3332S |
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Hersteller: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
auf Bestellung 24642 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1776+ | 0.28 EUR |
2SC3332T |
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Hersteller: onsemi
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
Description: TRANS NPN 160V 0.7A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 700 mW
auf Bestellung 4230 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2219+ | 0.23 EUR |
MJEC15030WP |
Produkt ist nicht verfügbar
FOD410TV |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.35 EUR |
10+ | 4.49 EUR |
100+ | 3.68 EUR |
1000+ | 2.84 EUR |
FOD4116TV |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 1.3mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL, VDE
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 1.3mA
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.25 EUR |
10+ | 5.84 EUR |
100+ | 4.78 EUR |
1000+ | 3.7 EUR |
MT9F002I12STCV-DP |
Hersteller: onsemi
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 4384H x 3288V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 13.7
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 4384H x 3288V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 13.7
Produkt ist nicht verfügbar
DM74ALS648NT |
Hersteller: onsemi
Description: IC TXRX NON-INVERT 24DIP
Packaging: Bag
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Number of Bits per Element: 8
Supplier Device Package: 24-PDIP
Description: IC TXRX NON-INVERT 24DIP
Packaging: Bag
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Number of Bits per Element: 8
Supplier Device Package: 24-PDIP
Produkt ist nicht verfügbar
NVMFWS020N06CT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMFWS020N06CT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMFWS003P03P8ZT1G |
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Hersteller: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Produkt ist nicht verfügbar
NTMFWS1D5N08XT1G |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Produkt ist nicht verfügbar
NTMFWS1D5N08XT1G |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Produkt ist nicht verfügbar
NVMFWS003N10MCT1G |
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Hersteller: onsemi
Description: PTNG 100V STD SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V STD SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 2.67 EUR |
NVMFWS003N10MCT1G |
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Hersteller: onsemi
Description: PTNG 100V STD SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V STD SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.17 EUR |
10+ | 4.34 EUR |
100+ | 3.51 EUR |
500+ | 3.12 EUR |
NVMFWS002N10MCLT1G |
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Hersteller: onsemi
Description: PTNG 100V LL SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NVMFWS002N10MCLT1G |
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Hersteller: onsemi
Description: PTNG 100V LL SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NZL6V8AXV3T3G |
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Hersteller: onsemi
Description: TVS DIODE 4.5VWM 7.9VC SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SC-89-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 7.9V
Power - Peak Pulse: 73W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 4.5VWM 7.9VC SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.5V
Supplier Device Package: SC-89-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 7.9V
Power - Peak Pulse: 73W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NZL5V6ATT1G |
Hersteller: onsemi
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NZL5V6ATT1G |
Hersteller: onsemi
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3VWM 9.97V SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 40pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V (Max)
Supplier Device Package: SC-75, SOT-416
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9.97V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NZ23C5V6ALT1G |
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Hersteller: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
NZ23C5V6ALT1G |
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Hersteller: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Produkt ist nicht verfügbar
NZ23C5V6ALT1G |
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Hersteller: onsemi
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 1VWM 8VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
auf Bestellung 2528500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.048 EUR |
74LVTH16245MTD |
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Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Produkt ist nicht verfügbar
74LVTH16245MTDX |
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Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 48-TSSOP
Produkt ist nicht verfügbar
MBR3045PTG |
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Hersteller: onsemi
Description: DIODE ARR SCHOTT 45V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A SOT93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
auf Bestellung 1826 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
198+ | 2.47 EUR |
SMMBZ33VALT1G |
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
SMMBZ33VALT1G |
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
33+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
BZX79C15 |
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Hersteller: onsemi
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 66822 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.25 EUR |
102+ | 0.17 EUR |
188+ | 0.094 EUR |
500+ | 0.074 EUR |
1000+ | 0.051 EUR |
2000+ | 0.042 EUR |
5000+ | 0.04 EUR |
10000+ | 0.034 EUR |
50000+ | 0.027 EUR |
NLV74HC138ADTR2G |
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Hersteller: onsemi
Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Description: IC DECODER/DEMUX 1X3:8 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 30332 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1783+ | 0.28 EUR |
NTB110N65S3HF |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V
Description: MOSFET N-CH 650V 30A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 740µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2635 pF @ 400 V
auf Bestellung 14176 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
86+ | 5.74 EUR |
BC817-40LT1 |
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Hersteller: onsemi
Description: TRANS NPN 45V 500MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS NPN 45V 500MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
auf Bestellung 466848 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
BC817-40LT3 |
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Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
auf Bestellung 930000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
FMS6501AMTC28X |
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Hersteller: onsemi
Description: IC VIDEO SWITCH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Switch Matrix
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 28-TSSOP
Control Interface: I2C
Description: IC VIDEO SWITCH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Switch Matrix
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 28-TSSOP
Control Interface: I2C
Produkt ist nicht verfügbar
MMBD6050LT1 |
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Hersteller: onsemi
Description: DIODE SWITCH 70V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE SWITCH 70V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
MMBD6050LT3 |
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Produkt ist nicht verfügbar
MMBD6050 |
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Hersteller: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
MMBD6050 |
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Hersteller: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
MMBD6050 |
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Hersteller: onsemi
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 31302 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10645+ | 0.048 EUR |
AR0820ATSC18XMEA0-TRBR |
Hersteller: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 95-FBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
Description: 8MP 1/2 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 95-FBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1400+ | 55.62 EUR |
AR0820ATSC18XMEA0-DPBR |
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Hersteller: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
Description: 8MP 1/2 CIS SO
Packaging: Tape & Reel (TR)
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2700+ | 57.08 EUR |
AR0820ATSC18XMEA0-DPBR |
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Hersteller: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Cut Tape (CT)
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
Description: 8MP 1/2 CIS SO
Packaging: Cut Tape (CT)
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 86.75 EUR |
10+ | 73.06 EUR |
25+ | 68.49 EUR |
100+ | 66.21 EUR |
AR0820ATSC18XMEA0-DRBR |
Hersteller: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 40
auf Bestellung 2699 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 85.96 EUR |
10+ | 72.39 EUR |
25+ | 67.86 EUR |
80+ | 65.6 EUR |