NTMFWS1D5N08XT1G onsemi
Hersteller: onsemiMOSFET MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.43mohm, 253 A
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.59 EUR |
| 10+ | 3.85 EUR |
| 25+ | 3.63 EUR |
| 100+ | 3.13 EUR |
| 250+ | 2.94 EUR |
| 500+ | 2.76 EUR |
| 1000+ | 2.38 EUR |
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Technische Details NTMFWS1D5N08XT1G onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 253A (Tc), Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 330µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V.
Weitere Produktangebote NTMFWS1D5N08XT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NTMFWS1D5N08XT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 253A 8-Pin WDFN EP T/R |
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NTMFWS1D5N08XT1G | Hersteller : onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
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NTMFWS1D5N08XT1G | Hersteller : onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 253A (Tc) Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V |
Produkt ist nicht verfügbar |