NVBG040N120M3S onsemi
Hersteller: onsemiDescription: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 21.22 EUR |
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Technische Details NVBG040N120M3S onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 10mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG040N120M3S nach Preis ab 23.42 EUR bis 49.19 EUR
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NVBG040N120M3S | Hersteller : onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120M3S | Hersteller : onsemi |
MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L SiC MOSFET 1200 V 40 mohm M3S Series in D2PAK-7LD package |
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NVBG040N120M3S | Hersteller : ONSEMI |
Description: ONSEMI - NVBG040N120M3S - Siliziumkarbid-MOSFET, n-Kanal, 49 A, 1.2 kV, 0.0405 ohm, D2PAK-7L tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.22V MOSFET-Modul-Konfiguration: - euEccn: NLR Verlustleistung: 297W Bauform - Transistor: D2PAK-7L Anzahl der Pins: 7Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0405ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120M3S | Hersteller : ONSEMI |
Description: ONSEMI - NVBG040N120M3S - Siliziumkarbid-MOSFET, n-Kanal, 49 A, 1.2 kV, 0.0405 ohm, D2PAK-7L tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.22V MOSFET-Modul-Konfiguration: - euEccn: NLR Verlustleistung: 297W Bauform - Transistor: D2PAK-7L Anzahl der Pins: 7Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0405ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG040N120M3S | Hersteller : ON Semiconductor |
SiC MOS D2PAK-7L 40mohm 1200V M3 |
Produkt ist nicht verfügbar |
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NVBG040N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVBG040N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |