Produkte > NXP USA INC. > Alle Produkte des Herstellers NXP USA INC. (35281) > Seite 67 nach 589
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PHP176NQ04T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 68.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V |
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PHP193NQ06T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 85.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5082 pF @ 25 V |
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PHP21N06LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
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PHP222NQ04LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 25 V |
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PHP225NQ04T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V |
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PHP3055E,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
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PHP32N06LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V |
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PHP45NQ15T,127 | NXP USA Inc. |
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PHP52N06T,127 | NXP USA Inc. |
Description: MOSFET N-CH 60V 52A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V |
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PHP66NQ03LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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PHP73N06T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V |
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PHP75NQ08T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V |
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PHP78NQ03LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1074 pF @ 25 V |
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PHP83N03LT,127 | NXP USA Inc. |
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PHT2NQ10T,135 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V Power Dissipation (Max): 6.25W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SC-73 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
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PHT6N06LT,135 | NXP USA Inc. |
Description: MOSFET N-CH 55V 2.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SC-73 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±13V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
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PHT6N06T,135 | NXP USA Inc. |
Description: MOSFET N-CH 55V 5.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V Power Dissipation (Max): 8.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SC-73 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V |
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PHU101NQ03LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V |
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PHU108NQ03LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V |
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PHU11NQ10T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V Power Dissipation (Max): 57.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
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PHU66NQ03LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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PHU78NQ03LT,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V |
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PHW80NQ10T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V |
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PHX18NQ11T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V Power Dissipation (Max): 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 110 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V |
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PHX20N06T,127 | NXP USA Inc. |
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PHX23NQ11T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V Power Dissipation (Max): 41.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220F Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 110 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V |
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PHX34NQ11T,127 | NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 110 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
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PHX45NQ11T,127 | NXP USA Inc. |
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PHX8NQ11T,127 | NXP USA Inc. |
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PIP3101-A,127 | NXP USA Inc. |
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PIP3102-R,118 | NXP USA Inc. |
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PIP3213-R,118 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: High Side Rds On (Typ): 15mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 18A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
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PMBF4391,215 | NXP USA Inc. |
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PMBF4392,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 250 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V |
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PMBF4393,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 250 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V |
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PMBFJ111,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 300 mW Resistance - RDS(On): 30 Ohms Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V |
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PMBFJ112,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 300 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
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PMBFJ113,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 300 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
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PMBFJ175,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Power - Max: 300 mW Resistance - RDS(On): 125 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V |
Produkt ist nicht verfügbar |
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PMBFJ308,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 250 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V |
Produkt ist nicht verfügbar |
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PMBFJ309,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Power - Max: 250 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V |
Produkt ist nicht verfügbar |
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PMBT5401,235 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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PMBT5401,215 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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PMEM4010PD,115 | NXP USA Inc. |
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Produkt ist nicht verfügbar |
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PMEM4020AND,115 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: NPN + Diode (Isolated) Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SC-74 Current - Collector (Ic) (Max): 950 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
Produkt ist nicht verfügbar |
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PMEM4020APD,115 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: PNP + Diode (Isolated) Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SC-74 Current - Collector (Ic) (Max): 750 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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PMEM4020ND,115 | NXP USA Inc. |
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Produkt ist nicht verfügbar |
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PMEM4020PD,115 | NXP USA Inc. |
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Produkt ist nicht verfügbar |
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PMG370XN,115 | NXP USA Inc. |
Description: MOSFET N-CH 30V 960MA 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 960mA (Ta) Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V Power Dissipation (Max): 690mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V |
Produkt ist nicht verfügbar |
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PMN23UN,135 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ) Supplier Device Package: SC-74 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V |
Produkt ist nicht verfügbar |
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PMN27UN,135 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ) Supplier Device Package: SC-74 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V |
Produkt ist nicht verfügbar |
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PMN28UN,165 | NXP USA Inc. |
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Produkt ist nicht verfügbar |
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PMN34LN,135 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SC-74 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V |
Produkt ist nicht verfügbar |
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PMN34UN,135 | NXP USA Inc. |
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Produkt ist nicht verfügbar |
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PMN40LN,135 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 10V Power Dissipation (Max): 1.75W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SC-74 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 25 V |
Produkt ist nicht verfügbar |
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PMN45EN,165 | NXP USA Inc. |
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Produkt ist nicht verfügbar |
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PMR280UN,115 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V Power Dissipation (Max): 530mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-75 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V |
Produkt ist nicht verfügbar |
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PMR290XN,115 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 970mA (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V Power Dissipation (Max): 530mW (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-75 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V |
Produkt ist nicht verfügbar |
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PMR400UN,115 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V Power Dissipation (Max): 530mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-75 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V |
Produkt ist nicht verfügbar |
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PMR780SN,115 | NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V Power Dissipation (Max): 530mW (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-75 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V |
Produkt ist nicht verfügbar |
PHP176NQ04T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 68.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Produkt ist nicht verfügbar
PHP193NQ06T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5082 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5082 pF @ 25 V
Produkt ist nicht verfügbar
PHP21N06LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET N-CH 55V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
PHP222NQ04LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 25 V
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 25 V
Produkt ist nicht verfügbar
PHP225NQ04T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
PHP3055E,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 10.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET N-CH 60V 10.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
PHP32N06LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Description: MOSFET N-CH 60V 34A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Produkt ist nicht verfügbar
PHP45NQ15T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 150V 45.1A TO220AB
Description: MOSFET N-CH 150V 45.1A TO220AB
Produkt ist nicht verfügbar
PHP52N06T,127 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Description: MOSFET N-CH 60V 52A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Produkt ist nicht verfügbar
PHP66NQ03LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 66A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 25V 66A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHP73N06T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
Description: MOSFET N-CH 60V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2464 pF @ 25 V
Produkt ist nicht verfügbar
PHP75NQ08T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
Produkt ist nicht verfügbar
PHP78NQ03LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1074 pF @ 25 V
Description: MOSFET N-CH 25V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1074 pF @ 25 V
Produkt ist nicht verfügbar
PHP83N03LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A TO220AB
Description: MOSFET N-CH 25V 75A TO220AB
Produkt ist nicht verfügbar
PHT2NQ10T,135 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 100V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V
Power Dissipation (Max): 6.25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Produkt ist nicht verfügbar
PHT6N06LT,135 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 55V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 5V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-73
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±13V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
PHT6N06T,135 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 25 V
Produkt ist nicht verfügbar
PHU101NQ03LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Description: MOSFET N-CH 30V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Produkt ist nicht verfügbar
PHU108NQ03LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 12 V
Produkt ist nicht verfügbar
PHU11NQ10T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 10.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 57.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 100V 10.9A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 57.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
PHU66NQ03LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 66A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 25V 66A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
PHU78NQ03LT,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
Description: MOSFET N-CH 25V 75A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 12 V
Produkt ist nicht verfügbar
PHW80NQ10T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 100V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
Description: MOSFET N-CH 100V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
Produkt ist nicht verfügbar
PHX18NQ11T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 12.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Description: MOSFET N-CH 110V 12.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Produkt ist nicht verfügbar
PHX20N06T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 12.9A SOT186A
Description: MOSFET N-CH 55V 12.9A SOT186A
Produkt ist nicht verfügbar
PHX23NQ11T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Description: MOSFET N-CH 110V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
PHX34NQ11T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 24.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 110V 24.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 110 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
PHX45NQ11T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 30.4A TO220F
Description: MOSFET N-CH 110V 30.4A TO220F
Produkt ist nicht verfügbar
PHX8NQ11T,127 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 110V 7.5A SOT186A
Description: MOSFET N-CH 110V 7.5A SOT186A
Produkt ist nicht verfügbar
PIP3101-A,127 |
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Hersteller: NXP USA Inc.
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Description: IC PWR DRVR N-CH 1:1 SOT263B-01
Produkt ist nicht verfügbar
PIP3102-R,118 |
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Hersteller: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Produkt ist nicht verfügbar
PIP3213-R,118 |
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Hersteller: NXP USA Inc.
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR DRIVER N-CHAN 1:1 SOT426
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 15mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 18A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Produkt ist nicht verfügbar
PMBF4391,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 40V 250MW SOT23
Description: JFET N-CH 40V 250MW SOT23
Produkt ist nicht verfügbar
PMBF4392,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
PMBF4393,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 250 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Produkt ist nicht verfügbar
PMBFJ111,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 10 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Produkt ist nicht verfügbar
PMBFJ112,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Produkt ist nicht verfügbar
PMBFJ113,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET N-CH 40V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 300 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
PMBFJ175,215 |
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Hersteller: NXP USA Inc.
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Description: JFET P-CH 30V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 300 mW
Resistance - RDS(On): 125 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Produkt ist nicht verfügbar
PMBFJ308,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar
PMBFJ309,215 |
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Hersteller: NXP USA Inc.
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Description: JFET N-CH 25V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 250 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
Produkt ist nicht verfügbar
PMBT5401,235 |
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Hersteller: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
PMBT5401,215 |
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Hersteller: NXP USA Inc.
Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
Description: TRANS PNP 150V 0.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23 (TO-236AB)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
PMEM4010PD,115 |
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Hersteller: NXP USA Inc.
Description: TRANS PNP 40V 1A 6TSOP
Description: TRANS PNP 40V 1A 6TSOP
Produkt ist nicht verfügbar
PMEM4020AND,115 |
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Hersteller: NXP USA Inc.
Description: TRANS NPN 40V 0.95A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 950 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: TRANS NPN 40V 0.95A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 950 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
PMEM4020APD,115 |
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Hersteller: NXP USA Inc.
Description: TRANS PNP 40V 0.75A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Description: TRANS PNP 40V 0.75A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP + Diode (Isolated)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 530mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 750 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
PMEM4020ND,115 |
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Hersteller: NXP USA Inc.
Description: TRANS NPN 40V 0.95A 6TSOP
Description: TRANS NPN 40V 0.95A 6TSOP
Produkt ist nicht verfügbar
PMEM4020PD,115 |
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Hersteller: NXP USA Inc.
Description: TRANS PNP 40V 0.75A 6TSOP
Description: TRANS PNP 40V 0.75A 6TSOP
Produkt ist nicht verfügbar
PMG370XN,115 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 960MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
Power Dissipation (Max): 690mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V
Description: MOSFET N-CH 30V 960MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
Power Dissipation (Max): 690mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 25 V
Produkt ist nicht verfügbar
PMN23UN,135 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 20V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Description: MOSFET N-CH 20V 6.3A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Produkt ist nicht verfügbar
PMN27UN,135 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
Produkt ist nicht verfügbar
PMN28UN,165 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 12V 5.7A 6TSOP
Description: MOSFET N-CH 12V 5.7A 6TSOP
Produkt ist nicht verfügbar
PMN34LN,135 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V
Description: MOSFET N-CH 20V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 20 V
Produkt ist nicht verfügbar
PMN34UN,135 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 4.9A 6TSOP
Description: MOSFET N-CH 30V 4.9A 6TSOP
Produkt ist nicht verfügbar
PMN40LN,135 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 5.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 25 V
Description: MOSFET N-CH 30V 5.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SC-74
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 25 V
Produkt ist nicht verfügbar
PMN45EN,165 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 5.2A 6TSOP
Description: MOSFET N-CH 30V 5.2A 6TSOP
Produkt ist nicht verfügbar
PMR280UN,115 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 20V 980MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
Description: MOSFET N-CH 20V 980MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 20 V
Produkt ist nicht verfügbar
PMR290XN,115 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 20V 970MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
Description: MOSFET N-CH 20V 970MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 970mA (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 20 V
Produkt ist nicht verfügbar
PMR400UN,115 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 30V 800MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Description: MOSFET N-CH 30V 800MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Produkt ist nicht verfügbar
PMR780SN,115 |
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Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 550MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Description: MOSFET N-CH 60V 550MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
Power Dissipation (Max): 530mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Produkt ist nicht verfügbar