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PMBFJ112,215 NXP Semiconductors
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Technische Details PMBFJ112,215 NXP Semiconductors
Description: JFET N-CH 40V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS), Voltage - Breakdown (V(BR)GSS): 40 V, Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drain to Source Voltage (Vdss): 40 V, Power - Max: 300 mW, Resistance - RDS(On): 50 Ohms, Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA, Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V.
Weitere Produktangebote PMBFJ112,215
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PMBFJ112,215 | Hersteller : NXP USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 300 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
Produkt ist nicht verfügbar |
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PMBFJ112,215 | Hersteller : NXP Semiconductors |
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Produkt ist nicht verfügbar |