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PHU11NQ10T,127 NXP Semiconductors
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Technische Details PHU11NQ10T,127 NXP Semiconductors
Description: MOSFET N-CH 100V 10.9A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V, Power Dissipation (Max): 57.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
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PHU11NQ10T,127 | Hersteller : NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V Power Dissipation (Max): 57.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
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