Produkte > NTJ
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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NTJ04-040L | Yageo | Inrush Current Limiter Thermistors | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJ04-040M | YAGEO | Description: YAGEO - NTJ04-040M - Thermistor, ICL, NTC, 40 Ohm, Produktreihe NT, 15mm, 4A tariffCode: 85334010 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Zulassungen: TÜV, UL Maximaler eingeschwungener Strom bei 25°C: 4A euEccn: NLR Maximale Nennenergie bei 25°C: - hazardous: false Temperaturabhängiger Widerstand bei 25°C: 40ohm rohsPhthalatesCompliant: YES Scheibengröße: 15mm usEccn: EAR99 Produktpalette: NT Series SVHC: No SVHC (14-Jun-2023) | auf Bestellung 4621 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJ06-010M | YAGEO | Description: YAGEO - NTJ06-010M - Thermistor, ICL, NTC, 10 Ohm, Produktreihe NT, 15mm, 6A tariffCode: 85334010 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Zulassungen: TÜV, UL Maximaler eingeschwungener Strom bei 25°C: 6A euEccn: NLR Maximale Nennenergie bei 25°C: - hazardous: false Temperaturabhängiger Widerstand bei 25°C: 10ohm rohsPhthalatesCompliant: YES Scheibengröße: 15mm usEccn: EAR99 Produktpalette: NT Series SVHC: No SVHC (14-Jun-2023) | auf Bestellung 4813 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJ06-013L | YAGEO | Description: NTC 15MM 13OHM 6A 15% BOX Packaging: Box Tolerance: ±15% Diameter: 0.591" (15.00mm) Lead Spacing: 0.295" (7.50mm) Approval Agency: TUV, UL Current - Steady State Max: 6 A R @ 25°C: 13 Ohms R @ Current: 152 mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJ06-013LF | YAGEO | Description: NTC 15MM 1OHM 9A 15% BOX Packaging: Box Tolerance: ±15% Diameter: 0.709" (18.00mm) Lead Spacing: 0.295" (7.50mm) Approval Agency: TUV, UL Current - Steady State Max: 6 A R @ 25°C: 13 Ohms R @ Current: 152 mOhms | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJ06-015M | YAGEO | NTC (Negative Temperature Coefficient) Thermistors NTC,15mm, 15ohm 6A +/-20% box | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJ06-015M | YAGEO | Description: YAGEO - NTJ06-015M - Thermistor, ICL, NTC, 15 Ohm, Produktreihe NT, 15mm, 6A tariffCode: 85334010 productTraceability: No rohsCompliant: YES Zulassungen: TÜV, UL Maximaler eingeschwungener Strom bei 25°C: 6A euEccn: NLR Maximale Nennenergie bei 25°C: - hazardous: false Temperaturabhängiger Widerstand bei 25°C: 15ohm rohsPhthalatesCompliant: YES Scheibengröße: 15mm usEccn: EAR99 Produktpalette: NT Series SVHC: No SVHC (14-Jun-2023) | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJ08-005MF | YAGEO | NTC (Negative Temperature Coefficient) Thermistors NTC,15mm, 1ohm 9A, +/-20% box | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJ25-6 | Knowles Voltronics | Trimmer/Variable Capacitors | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD1155L | onsemi | onsemi NFET SC88 8V 1.3A 175MOHM | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD1155LT1 | onsemi | Description: MOSFET N/P-CH 8V 1.3A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD1155LT1G | onsemi | Description: MOSFET N/P-CH 8V 1.3A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD1155LT1G | ON-Semicoductor | Transistor N/P-Channel MOSFET; 8V; 8V; 320mOhm; 1,3A; 400mW; -55°C ~ 150°C; NTJD1155LT1G NTJD1155L TNTJD1155l Anzahl je Verpackung: 50 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD1155LT1G | ONSEMI | Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC88 On-state resistance: 130/320mΩ Kind of package: reel; tape Supply voltage: 1.8...8V DC Control voltage: 1.5...8V DC | auf Bestellung 2242 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD1155LT1G | ONSEMI | Description: ONSEMI - NTJD1155LT1G - Dual-MOSFET, Komplementärer n- und p-Kanal, 8 V, 8 V, 1.3 A, 1.3 A, 0.13 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 8V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.13ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 8V euEccn: NLR Bauform - Transistor: SC-88 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.13ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12531 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD1155LT1G | onsemi | MOSFETs 8V +/-1.3A P-Channel w/Level Shift | auf Bestellung 145276 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | auf Bestellung 776 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD1155LT1G | ONSEMI | Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; P-Channel; SMD; SC88 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: SC88 On-state resistance: 130/320mΩ Kind of package: reel; tape Supply voltage: 1.8...8V DC Control voltage: 1.5...8V DC Anzahl je Verpackung: 1 Stücke | auf Bestellung 2242 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | auf Bestellung 84000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD1155LT1G | onsemi | Description: MOSFET N/P-CH 8V 1.3A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 91731 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD1155LT1G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R | auf Bestellung 776 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD1155LT1G | ONSEMI | Description: ONSEMI - NTJD1155LT1G - Dual-MOSFET, Komplementärer n- und p-Kanal, 8 V, 8 V, 1.3 A, 1.3 A, 0.13 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 8V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.13ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 8V euEccn: NLR Drain-Source-Durchgangswiderstand, n-Kanal: 0.13ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 400mW SVHC: No SVHC (14-Jun-2023) | auf Bestellung 8010 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD1155LT1G | ON | 09+ | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJD1155LT2G | onsemi | MOSFETs NFET SC88 8V 1.3A 175mOhm | auf Bestellung 121319 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD1155LT2G | onsemi | Description: MOSFET N/P-CH 8V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 8V Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD1155LT2G | ON Semiconductor | Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 Reel | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD1155LT2G | ON Semiconductor | 1.3A High Side Load Switch | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD1155LT2G | onsemi | Description: MOSFET N/P-CH 8V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 8V Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3140 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD2152P | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD2152PLT1 | auf Bestellung 1200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD2152PT | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD2152PT1 | onsemi | Description: SMALL SIGNAL P-CHANNEL MOSFET | auf Bestellung 14760 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NTJD2152PT1 | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD2152PT1 | onsemi | Description: MOSFET 2P-CH 8V 0.775A SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD2152PT1G | ON | SOT-363 | auf Bestellung 2434 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJD2152PT1G | onsemi | Description: MOSFET 2P-CH 8V 0.775A SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD2152PT1G | ON | 09+ | auf Bestellung 6018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJD2152PT1G | onsemi | Description: MOSFET 2P-CH 8V 0.775A SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD2152PT1G | ON | 07+; | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJD2152PT1G | onsemi | Description: SMALL SIGNAL P-CHANNEL MOSFET | auf Bestellung 541167 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NTJD2152PT2 | onsemi | Description: MOSFET 2P-CH 8V 0.775A SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD2152PT2G | onsemi | Description: SMALL SIGNAL P-CHANNEL MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD2152PT2G | ON | 07+; | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJD2152PT4 | ON Semiconductor | Description: MOSFET 2P-CH 8V 0.775A SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD2152PT4G | ON Semiconductor | Description: MOSFET 2P-CH 8V 0.775A SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD3158CT1G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD3158CT2G | ON Semiconductor | Description: MOSFET N/P-CH 20V SC88-6 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4001N | onsemi | onsemi NFET SC88 30V 250MA 1.5R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4001N | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4001NT1 | onsemi | MOSFET 30V 250mA Dual | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4001NT1 | auf Bestellung 5400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4001NT1 | onsemi | Description: MOSFET 2N-CH 30V 0.25A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4001NT1G | onsemi | Description: MOSFET 2N-CH 30V 0.25A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 174000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 309000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ONSEMI | Description: ONSEMI - NTJD4001NT1G - Dual-MOSFET, n-Kanal, 30 V, 250 mA, 1 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 250mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 272mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1745 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4001NT1G Produktcode: 192092 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 309000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 174000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ONSEMI | Description: ONSEMI - NTJD4001NT1G - Dual-MOSFET, n-Kanal, 30 V, 250 mA, 1 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 250mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 272mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4001NT1G | onsemi | Description: MOSFET 2N-CH 30V 0.25A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 81595 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 9460 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | onsemi | MOSFETs 30V 250mA Dual N-Channel | auf Bestellung 78707 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4001NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | auf Bestellung 9460 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2274 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2274 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD4001NT2G | onsemi | Description: MOSFET 2N-CH 30V 0.25A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105C | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4105CT1 | ON | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NTJD4105CT1G | ON Semiconductor | Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT1G | ON-Semicoductor | Transistor N/P-Channel MOSFET; 20V/8V; 12V/8V; 445mOhm/900mOhm; 910mA/1,1A; 550mW; -55°C ~ 150°C; NTJD4105CT1G TNTJD4105c Anzahl je Verpackung: 50 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD4105CT1G | onsemi | Description: MOSFET N/P-CH 20V/8V 0.63A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 10194 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4105CT1G | onsemi | MOSFET 20V/-8V 0.63A/-.775A Complementary | auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4105CT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.63/-0.755A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 445/900mΩ Mounting: SMD Gate charge: 3/4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT1G | ONSEMI | Description: ONSEMI - NTJD4105CT1G - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 630mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm Verlustleistung, p-Kanal: 270mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 270mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 7345 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4105CT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.63/-0.755A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 445/900mΩ Mounting: SMD Gate charge: 3/4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT1G | onsemi | Description: MOSFET N/P-CH 20V/8V 0.63A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4105CT1G | ON Semiconductor | Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4105CT1G | ON Semiconductor | Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT2 | ON | 2005 | auf Bestellung 242 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJD4105CT2 | ON Semiconductor | Description: MOSFET N/P-CH 20V/8V SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT2G | ON Semiconductor | Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT2G | onsemi | MOSFET 20V/-8V 0.63A/-.775A Complementary | auf Bestellung 8094 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4105CT2G | ONSEMI | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.46/-0.558A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 375/300mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT2G | onsemi | Description: MOSFET N/P-CH 20V/8V 0.63A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 4760 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4105CT2G | ONSEMI | Description: ONSEMI - NTJD4105CT2G - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 630mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 630mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.29ohm Verlustleistung, p-Kanal: 270mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 270mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 11200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4105CT2G | ON Semiconductor | Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4105CT2G | ON Semiconductor | Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT2G | ONSEMI | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-8V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-8V Drain current: 0.46/-0.558A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V; ±12V On-state resistance: 375/300mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT2G | onsemi | Description: MOSFET N/P-CH 20V/8V 0.63A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V, 8V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4105CT4 | ON Semiconductor | Description: MOSFET N/P-CH 20V/8V SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4105CT4G | ON Semiconductor | Description: MOSFET N/P-CH 20V/8V SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4152P | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4152PT1 | auf Bestellung 14484 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4152PT1 | ON Semiconductor | Description: MOSFET 2P-CH 20V 0.88A SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4152PT1G | onsemi | Description: MOSFET 2P-CH 20V 0.88A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 66166 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4152PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4152PT1G | onsemi | Description: MOSFET 2P-CH 20V 0.88A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 63000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4152PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4152PT1G | onsemi | MOSFETs 20V 0.88mA P-Channel ESD Protection | auf Bestellung 27178 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4152PT1G | ONSEMI | Description: ONSEMI - NTJD4152PT1G - Dual-MOSFET, p-Kanal, 20 V, 20 V, 880 mA, 880 mA, 0.215 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 880mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 880mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.215ohm Verlustleistung, p-Kanal: 272mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.215ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 272mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4152PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4152PT2G | onsemi | MOSFETs PFET SC88 20V 88MA 2 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4152PT2G | onsemi | Description: MOSFET 2P-CH 20V 0.88A SC88-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 5895 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4152PT2G | ON Semiconductor | auf Bestellung 2970 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NTJD4152PT2G | ON Semiconductor | Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4152PT2G | onsemi | Description: MOSFET 2P-CH 20V 0.88A SC88-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Rds On (Max) @ Id, Vgs: 260mOhm @ 880mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4152PT2G | ON Semiconductor | Trans MOSFET P-CH 20V 0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4158CT1G | ON Semiconductor | Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4158CT1G | onsemi | Description: MOSFET N/P-CH 30V/20V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 12560 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4158CT1G | ON Semiconductor | Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4158CT1G | ON Semiconductor | Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4158CT1G | ON Semiconductor | Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R | auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4158CT1G | onsemi | MOSFET PFET 20V .88A 1OHM | auf Bestellung 72380 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4158CT1G | onsemi | Description: MOSFET N/P-CH 30V/20V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4158CT1G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4158CT1G | ON Semiconductor | Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4158CT2G | ON Semiconductor | Description: MOSFET N/P-CH 30V/20V SC88-6 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4158CT2G | auf Bestellung 10270 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4401 | ON-Semicoductor | 2xN-MOSFET 20V 0.63A 0.55W NTJD4401NT1G TNTJD4401 Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD4401N | onsemi | onsemi NFET SC88 20V 630MA 375MO | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401N | auf Bestellung 1580 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4401NT1 | auf Bestellung 2200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4401NT1 | onsemi | Description: MOSFET 2N-CH 20V 0.63A SOT363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4401NT1G | onsemi | Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4401NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | ONSEMI | Description: ONSEMI - NTJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 630 mA, 0.29 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 630mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 270mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3204 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD4401NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 445mΩ Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | onsemi | Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 18450 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4401NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 445mΩ Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 1800 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD4401NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401NT1G | onsemi | MOSFET 20V Dual N-Channel ESD Protection | auf Bestellung 19133 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4401NT1G-001 | onsemi | Description: MOSFET 2N-CH 20V 630MA SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401NT2 | onsemi | Description: SMALL SIGNAL N-CHANNEL MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
NTJD4401NT2G | onsemi | Description: MOSFET 2N-CH 20V 0.63A SOT363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401NT2G | ON Semiconductor | Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401NT4 | onsemi | Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401NT4G | ON Semiconductor | Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD4401NT4G | onsemi | Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD440NT1G | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD4538NT1G | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJD5121N | onsemi | onsemi NFET SC88 60V 295MA 1.6OH | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD5121NT1G | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 127761 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD5121NT1G | ONSEMI | Description: ONSEMI - NTJD5121NT1G - DUAL N CHANNEL MOSFET, 60V, SC-88 tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 Drain-Source-Spannung Vds, p-Kanal: 0 MSL: MSL 1 - Unlimited usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 0 Drain-Source-Durchgangswiderstand, p-Kanal: 0 Verlustleistung, p-Kanal: 0 Drain-Source-Spannung Vds, n-Kanal: 0 euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0 productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Verlustleistung, n-Kanal: 0 Betriebstemperatur, max.: 150°C directShipCharge: 25 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 50093 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 21534 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD5121NT1G | onsemi | MOSFET NFET SC88D 60V 295mA | auf Bestellung 321539 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD5121NT1G | ON-Semicoductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SOT-363 NTJD5121NT1G TNTJD5121n Anzahl je Verpackung: 50 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD5121NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.295A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 2955 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 50513 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 | auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.295A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 2955 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD5121NT1G | ONSEMI | Description: ONSEMI - NTJD5121NT1G - Dual-MOSFET, n-Kanal, 60 V, 60 V, 304 mA, 304 mA, 1 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 304mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 304mA Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 266mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 266mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 14086 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 21534 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G Produktcode: 185670 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT1G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJD5121NT2G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD5121NT2G | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 3283 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD5121NT2G | ONSEMI | Description: ONSEMI - NTJD5121NT2G - Dual-MOSFET, n-Kanal, 60 V, 295 mA, 1 ohm, SOT-363, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 295 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 1 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.7 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD5121NT2G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD5121NT2G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD5121NT2G | onsemi | Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD5121NT2G | onsemi | MOSFET NFET SC88D 60V 295mA | auf Bestellung 19317 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD5121NT2G | ONSEMI | Description: ONSEMI - NTJD5121NT2G - Dual-MOSFET, n-Kanal, 60 V, 295 mA, 1 ohm, SOT-363, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 295 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 250 Bauform - Transistor: SOT-363 Anzahl der Pins: 6 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 1 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.7 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJD5121NT2G | ON Semiconductor | Trans MOSFET N-CH 60V 0.295A 6-Pin SC-88 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS3151P | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJS3151PT1 | auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJS3151PT1G | ONSEMI | NTJS3151PT1G SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3151PT1G | ON Semiconductor | Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS3151PT1G | ON Semiconductor | Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3151PT1G | onsemi | MOSFET 12V 3.3A P-Channel | auf Bestellung 23174 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3151PT1G | onsemi | Description: MOSFET P-CH 12V 2.7A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V | auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3151PT1G | ONSEMI | Description: ONSEMI - NTJS3151PT1G - Leistungs-MOSFET, p-Kanal, 12 V, 2.7 A, 0.045 ohm, SC-88, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 2.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 625mW Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 625mW Bauform - Transistor: SC-88 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.045ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 6235 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS3151PT1G | ON Semiconductor | Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3151PT1G | onsemi | Description: MOSFET P-CH 12V 2.7A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3151PT2 | onsemi | Description: MOSFET P-CH 12V 2.7A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3151PT2G | ON Semiconductor | Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS3151PT2G | onsemi | Description: MOSFET P-CH 12V 2.7A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3151PT2G | ON Semiconductor | Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3151PT2G | onsemi | Description: MOSFET P-CH 12V 2.7A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3151PT2G | ON Semiconductor | Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3151PT2G | ON Semiconductor | Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS3151PT2G | onsemi | MOSFET 12V 3.3A P-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157N | onsemi | onsemi NFET SC88 20V 4A 60MO | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT1G | ONSEMI | Description: ONSEMI - NTJS3157NT1G - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.06 ohm, SC-88, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: SC-88 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2795 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS3157NT1G | onsemi | MOSFET 20V 4A N-Channel | auf Bestellung 142274 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3157NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 3.2A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 3.2A 6-Pin SC-88 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS3157NT1G | onsemi | Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | auf Bestellung 13730 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3157NT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 3.2A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT1G | ONSEMI | Description: ONSEMI - NTJS3157NT1G - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.06 ohm, SC-88, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: SC-88 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2795 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS3157NT1G | onsemi | Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3157NT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT2 | onsemi | Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT2G | onsemi | Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT2G | ON Semiconductor | Trans MOSFET N-CH 20V 3.2A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT4 | onsemi | Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS3157NT4G | onsemi | Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4151P | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJS4151PT1 | onsemi | Description: MOSFET P-CH 20V 3.3A SOT-363 Packaging: Cut Tape (CT) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4151PT1 | onsemi | Description: MOSFET P-CH 20V 3.3A SOT-363 Packaging: Tape & Reel (TR) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4151PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 3.3A 6-Pin SC-88 T/R | auf Bestellung 5925 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS4151PT1G | onsemi | Description: MOSFET P-CH 20V 3.3A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V | auf Bestellung 6715 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS4151PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 3.3A 6-Pin SC-88 T/R | auf Bestellung 5925 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS4151PT1G | ONSEMI | Description: ONSEMI - NTJS4151PT1G - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.047 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 32240 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4151PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 3.3A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4151PT1G | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 1W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 820 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS4151PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 3.3A 6-Pin SC-88 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4151PT1G | onsemi | Description: MOSFET P-CH 20V 3.3A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS4151PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 3.3A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4151PT1G | onsemi | MOSFET -20V -4.2A P-Channel | auf Bestellung 64933 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS4151PT1G | ONSEMI | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 1W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 820 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJS4151PT1G | ON Semiconductor | Trans MOSFET P-CH 20V 3.3A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4151PT1G | ONSEMI | Description: ONSEMI - NTJS4151PT1G - Leistungs-MOSFET, p-Kanal, 20 V, 4.2 A, 0.047 ohm, SOT-363, Oberflächenmontage tariffCode: 85412900 rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Verlustleistung: 1W productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 17775 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4160NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4160NT1G | onsemi | Description: MOSFET N-CH 30V 1.8A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4160NT1G | ONSEMI | Description: ONSEMI - NTJS4160NT1G - NTJS4160NT1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 637216 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4160NT1G | onsemi | Description: MOSFET N-CH 30V 1.8A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4160NT1G | onsemi | Description: MOSFET N-CH 30V 1.8A SC88/SC70-6 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V | auf Bestellung 637216 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS4405NT1 | onsemi | Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4405NT1G | ON Semiconductor | auf Bestellung 965 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
NTJS4405NT1G | ONSEMI | Description: ONSEMI - NTJS4405NT1G - Leistungs-MOSFET, n-Kanal, 25 V, 1 A, 0.249 ohm, SOT-363, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 630mW Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.249ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 661 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4405NT1G | onsemi | Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4405NT1G | onsemi | MOSFET 25V 1.2A N-Channel | auf Bestellung 8163 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS4405NT1G | ON Semiconductor | Trans MOSFET N-CH 25V 1A 6-Pin SC-88 T/R | auf Bestellung 5693 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS4405NT1G | ON | 07+; | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJS4405NT1G | ONSEMI | Description: ONSEMI - NTJS4405NT1G - Leistungs-MOSFET, n-Kanal, 25 V, 1 A, 0.249 ohm, SOT-363, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 630mW Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.249ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1146 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4405NT1G | ON Semiconductor | Trans MOSFET N-CH 25V 1A 6-Pin SC-88 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4405NT1G | onsemi | Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4405NT1G | ON Semiconductor | Trans MOSFET N-CH 25V 1A 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4405NT1G | ON Semiconductor | Trans MOSFET N-CH 25V 1A 6-Pin SC-88 T/R | auf Bestellung 5693 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS4405NT4 | onsemi | Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJS4405NT4G | ON | 09+ | auf Bestellung 98018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJS4405NT4G | ONSEMI | Description: ONSEMI - NTJS4405NT4G - Leistungs-MOSFET, n-Kanal, 25 V, 1.2 A, 0.249 ohm, SC-88, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 1.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 890mW Bauform - Transistor: SC-88 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.249ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 818462 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
NTJS4405NT4G | onsemi | Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | auf Bestellung 845843 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS4405NT4G | ON | 0601NO | auf Bestellung 5145 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
NTJS4405NT4G | onsemi | Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
NTJTA-3-SP-G | auf Bestellung 279 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTA-3D-SP-G | auf Bestellung 1045 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTA-4D-SP-G | auf Bestellung 1061 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTA-5-SP-G | auf Bestellung 46 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTA-5D-SP-G | auf Bestellung 192 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTD-2-SP-G | auf Bestellung 1592 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTD-3-SP-G | auf Bestellung 1355 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTD-3D-SP-G | auf Bestellung 243 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
NTJTD-4-SP-G | auf Bestellung 75 Stücke: Lieferzeit 21-28 Tag (e) |