Produkte > IXG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXG100IF1200HF | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG100NA60U | IXYS | MODULE | auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXG50I4500KN | IXYS | Description: DISC IGBT NPT-VERY HI VOLTAGE IS Packaging: Tube Package / Case: ISOPLUS264™ Mounting Type: Through Hole Input Type: Standard Supplier Device Package: ISOPLUS264™ IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 4500 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG50I4500KN | IXYS | IGBTs Disc IGBT NPT-Very Hi Voltage ISOPLUS264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG611P1 | IXYS | Description: IC DRIVER MOSF/IGBT 0.6A 8DIP | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG611S1 | IXYS | Description: IC DRIVER MOSF/IGBT 0.6A 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG611S1T/R | IXYS | Description: IC DRIVER MOSF/IGBT 0.6A 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG70IF1200NA | IXYS | IGBT Modules TO227 1200V 70A IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG70IF1200NA | IXYS | IXG70IF1200NA IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| IXG70IF1200NA | IXYS | Description: IGBT MODULE - OTHERS SMPD-B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA 15N120C | IXYS | Littelfuse | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA10N60 | IXYS | Array | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA10N60 Produktcode: 98637 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGA120N30TC | IXYS | Description: IGBT 300V 120A 250W TO263AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N100 | IXYS | Description: IGBT 1000V 24A 100W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 100ns/850ns Switching Energy: 2.5mJ (off) Test Condition: 800V, 12A, 120Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N100 | IXYS | IGBT Transistors 24Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N100A | IXYS | IGBT Transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A2 | IXYS | IGBTs 24 Amps 1200V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A2 | IXYS | Description: IGBT 1200V 24A 75W TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 15ns/680ns Switching Energy: 5.4mJ (off) Test Condition: 960V, 12A, 100Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 48 A Power - Max: 75 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO263 Mounting: SMD Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A3 | IXYS | IGBTs 1200V, 12A IGBT; G Series | auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA12N120A3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO263 Mounting: SMD Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 22A 100mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A3 | IXYS | Description: IGBT 1200V 22A 100W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Gate Charge: 20.4 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A3-TRL | IXYS | IGBTs IXGA12N120A3 TRL | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A3-TRL | Littelfuse | Trans IGBT Chip N-CH 1200V 22A 100W 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N120A3-TRL | IXYS | Description: IXGA12N120A3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 35ns/62ns Test Condition: 960V, 12A, 10Ohm, 15V Gate Charge: 20.4 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N60B | IXYS | Description: IGBT 600V 24A 100W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 20ns/150ns Switching Energy: 500µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N60BD1 | IXYS | Description: IGBT 600V 24A 100W TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 20ns/150ns Switching Energy: 500µJ (off) Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N60C | IXYS | Description: IGBT 600V 24A 100W TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N60C | IXYS | IGBT Transistors 24 Amps 600V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N60CD1 | IXYS | IGBTs 24 Amps 600V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA12N60CD1 | IXYS | Description: IGBT 600V 24A 100W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA150N30TC | IXYS | Description: IGBT 300V 150A TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: TO-263AA Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 300 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA15N100C | IXYS | IGBTs 30 Amps 1000V 3.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA15N100C | IXYS | Description: IGBT 1000V 30A 150W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 850µJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 73 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA15N120B | IXYS | IGBTs 30 Amps 1200V 3.2 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA15N120B | IXYS | Description: IGBT 1200V 30A 150W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA15N120B | Littelfuse | Trans IGBT Chip N-CH 1200V 30A 150000mW 3-Pin(2+Tab) TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA16N60B2 | IXYS | Description: IGBT 600V 40A 150W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 18ns/73ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA16N60B2D1 | IXYS | Description: IGBT 600V 40A 150W TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 18ns/73ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 24 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA16N60C2 | IXYS | IGBT Transistors 16 Amps 600V 3.0V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA16N60C2 | IXYS | Description: IGBT 600V 40A 150W TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/75ns Switching Energy: 160µJ (on), 90µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA16N60C2D1 | IXYS | Description: IGBT 600V 40A 150W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/75ns Switching Energy: 160µJ (on), 90µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA16N60C2D1 | IXYS | IGBT Transistors 16 Amps 600V 3.0V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N100 | IXYS | IGBTs 40 Amps 1000V 3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N100 | IXYS | Description: IGBT 1000V 40A 150W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/350ns Switching Energy: 3.5mJ (off) Test Condition: 800V, 20A, 47Ohm, 15V Gate Charge: 73 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N100-TRL | Littelfuse | TO247 1200V 100A GENX4 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120 | IXYS | Description: IGBT 1200V 40A 150W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 28ns/400ns Switching Energy: 6.5mJ (off) Test Condition: 800V, 20A, 47Ohm, 15V Gate Charge: 63 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(2+Tab) TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120 | IXYS | IGBTs 40 Amps 1200V 2.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120A3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 50nC Kind of package: tube Collector current: 20A Pulsed collector current: 120A Turn-on time: 66ns Turn-off time: 1.53µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | auf Bestellung 172 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGA20N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGA20N120A3 | IXYS | IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | auf Bestellung 3150 Stücke: Lieferzeit 430-434 Tag (e) |
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| IXGA20N120A3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 50nC Kind of package: tube Collector current: 20A Pulsed collector current: 120A Turn-on time: 66ns Turn-off time: 1.53µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 172 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGA20N120A3 Produktcode: 56134 | IXYS | Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-263 Vces: 1200 Vce: 2,5 Ic 25: 40 Ic 100: 20 Pd 25: 180 td(on)/td(off) 100-150 Grad: 16/290 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120A3 | IXYS | Description: IGBT PT 1200V 40A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/290ns Switching Energy: 2.85mJ (on), 6.47mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120A3-TRL | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180W 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120A3-TRL | IXYS | Description: IXGA20N120A3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 44 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 16ns/290ns Switching Energy: 2.85mJ (on), 6.47mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120A3-TRL | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120A3-TRL | IXYS | IGBTs IXGA20N120A3 TRL | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B | IXYS | Description: IGBT 1200V 40A 150W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 28ns/400ns Switching Energy: 6.5mJ (off) Gate Charge: 63 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B | IXYS | IGBTs 40 Amps 1200V 2.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3 | IXYS | Description: IGBT 1200V 36A 180W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/150ns Switching Energy: 920µJ (on), 560µJ (off) Test Condition: 600V, 16A, 15Ohm, 15V Gate Charge: 51 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 180 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 51nC Kind of package: tube Collector current: 20A Pulsed collector current: 80A Turn-on time: 61ns Turn-off time: 720ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO263 Mounting: SMD Gate charge: 51nC Kind of package: tube Collector current: 20A Pulsed collector current: 80A Turn-on time: 61ns Turn-off time: 720ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3 | IXYS | IGBTs GenX3 1200V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3-TRL | IXYS | Description: IXGA20N120B3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 16ns/150ns Switching Energy: 920µJ (on), 560µJ (off) Test Condition: 600V, 16A, 15Ohm, 15V Gate Charge: 51 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 180 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N120B3-TRL | IXYS | IGBTs IXGA20N120B3 TRL | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N250HV | IXYS | IGBTs TO263 2500V 30A IGBT | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA20N250HV | Littelfuse | High Voltage IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N250HV | IXYS | Description: DISC IGBT NPT-VERY HI VOLTAGE TO Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A Supplier Device Package: TO-263HV Gate Charge: 53 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 105 A Power - Max: 150 W | auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA20N250HV-TRL | IXYS | Description: DISC IGBT NPT VERY HI VOLTAGE TO Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A Supplier Device Package: TO-263HV Gate Charge: 53 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 105 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N250HV-TRL | IXYS | IGBTs TO263 2500V 12A IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N60B | IXYS | Description: IGBT 600V 40A 150W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 15ns/150ns Switching Energy: 150µJ (on), 700µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA20N60B | IXYS | IGBT Transistors 40 Amps 600V 2 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA24N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA24N120C3 | IXYS | IXGA24N120C3 SMD IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA24N120C3 | IXYS | Description: IGBT 1200V 48A 250W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/93ns Switching Energy: 1.16mJ (on), 470µJ (off) Test Condition: 600V, 20A, 5Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA24N120C3 | IXYS | IGBTs 40khz PT IGBTs Power Device | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA24N60C | IXYS | Description: IGBT 600V 48A 150W TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 15ns/75ns Switching Energy: 240µJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA28N60A3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 18ns/300ns Switching Energy: 700µJ (on), 2.4mJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 170 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N120B3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO263 Mounting: SMD Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Turn-on time: 56ns Turn-off time: 471ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N120B3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO263 Mounting: SMD Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Turn-on time: 56ns Turn-off time: 471ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N120B3 | IXYS | Description: IGBT 1200V 60A 300W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 16ns/127ns Switching Energy: 3.47mJ (on), 2.16mJ (off) Test Condition: 960V, 30A, 5Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N120B3 | IXYS | IGBTs GenX3 1200V IGBT | auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA30N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK | auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGA30N120B3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGA30N120B3 - IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 3.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 60A SVHC: No SVHC (17-Jan-2023) | auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGA30N120B3-TRL | IXYS | Description: IXGA30N120B3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 16ns/127ns Switching Energy: 3.47mJ (on), 2.16mJ (off) Test Condition: 960V, 30A, 5Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N120B3-TRL | IXYS | IGBTs IXGA30N120B3 TRL | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N120B3-TRL | Littelfuse | Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N120B3-TRL | Littelfuse | Trans IGBT Chip N-CH 1200V 60A 300W 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N60C3 | IXYS | Description: IGBT 600V 60A 220W TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 16ns/42ns Switching Energy: 270µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N60C3C1 | IXYS | Description: IGBT 600V 60A 220W TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 17ns/42ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N60C3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N60C3C1 | IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGA30N60C3D4 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(2+Tab) TO-263AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N60C3D4 | IXYS | IGBT Transistors 600V 30A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA30N60C3D4 | IXYS | Description: IGBT 600V 60A 220W TO263 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA36N60A3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 23 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 18ns/330ns Switching Energy: 740µJ (on), 3mJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 220 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA36N60A3 | IXYS | IGBT Transistors Disc IGBT PT-Low Frequency TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA36N60A3-TRL | Littelfuse | IGBTs Disc IGBT PT-Low Frequency TO-263D2 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA42N30C3 | IXYS | IXGA42N30C3 SMD IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA42N30C3 | IXYS | Description: IGBT 300V 223W TO263AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60A3 | IXYS | IGBTs 48 Amps 600V | auf Bestellung 311 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA48N60A3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO263 Mounting: SMD Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 300A Turn-on time: 54ns Turn-off time: 925ns Gate charge: 110nC Anzahl je Verpackung: 1 Stücke | auf Bestellung 162 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGA48N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60A3 | IXYS | Description: IGBT 600V 120A 300W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 25ns/334ns Switching Energy: 950µJ (on), 2.9mJ (off) Test Condition: 480V, 32A, 5Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 300 W | auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA48N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGA48N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60A3 | IXYS | Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO263 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO263 Mounting: SMD Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 300A Turn-on time: 54ns Turn-off time: 925ns Gate charge: 110nC | auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGA48N60A3-TRL | IXYS | Description: IGBT PT 600V 120A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 25ns/334ns Switching Energy: 950µJ (on), 2.9mJ (off) Test Condition: 480V, 32A, 5Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 300 W | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA48N60A3-TRL | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60A3-TRL | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGA48N60A3-TRL | IXYS | IGBTs IXGA48N60A3 TRL | auf Bestellung 1275 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA48N60A3-TRL | IXYS | Description: IGBT PT 600V 120A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 25ns/334ns Switching Energy: 950µJ (on), 2.9mJ (off) Test Condition: 480V, 32A, 5Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 300 W | auf Bestellung 1749 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGA48N60A3-TRL | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGA48N60A3-TRL | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGA48N60B3 | IXYS | IGBT Transistors 48 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60B3 | IXYS | Description: IGBT 600V 300W TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 22ns/130ns Switching Energy: 840µJ (on), 660µJ (off) Test Condition: 480V, 30A, 5Ohm, 15V Gate Charge: 115 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60B3-TRL | IXYS | IGBTs IXGA48N60B3 TRL | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60B3-TRL | IXYS | Description: IXGA48N60B3 TRL Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 22ns/130ns Switching Energy: 840µJ (on), 660µJ (off) Test Condition: 480V, 30A, 5Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60C3 | IXYS | IGBT Transistors 48 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60C3 | IXYS | Description: IGBT PT 600V 75A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 19ns/60ns Switching Energy: 410µJ (on), 230µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 77 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60C3-TRL | IXYS | IGBTs IXGA48N60C3 TRL | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA48N60C3-TRL | IXYS | Description: IGBT PT 600V 75A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: PT Td (on/off) @ 25°C: 19ns/60ns Switching Energy: 410µJ (on), 230µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 77 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA4N100 | IXYS | IGBTs 8 Amps 1000V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA4N100 | IXYS | Description: IGBT 1000V 8A 40W TO263AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA50N60C4 | IXYS | Description: IGBT 600V 90A 300W TO263 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA7N60B | IXYS | IGBTs 14 Amps 600V 2.0 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA7N60B | IXYS | Description: IGBT PT 600V 14A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 9ns/100ns Switching Energy: 70µJ (on), 300µJ (off) Test Condition: 480V, 7A, 22Ohm, 15V Gate Charge: 25 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 54 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA7N60BD1 | IXYS | Description: IGBT 600V 14A 80W TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 10ns/100ns Switching Energy: 300µJ (off) Test Condition: 480V, 7A, 18Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 80 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA7N60C | IXYS | Description: IGBT 600V 14A 54W TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 9ns/65ns Switching Energy: 70µJ (on), 120µJ (off) Test Condition: 480V, 7A, 22Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 54 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA7N60C | IXYS | IGBT Transistors 14 Amps 600V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA7N60CD1 | IXYS | IGBT Transistors 14 Amps 600V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA7N60CD1 | IXYS | Description: IGBT 600V 14A 75W TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 10ns/65ns Switching Energy: 120µJ (off) Test Condition: 480V, 7A, 18Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 75 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA8N100 | IXYS | IGBTs 16 Amps 1000V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA8N100 | IXYS | Description: IGBT 1000V 16A 54W TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 8A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 15ns/600ns Switching Energy: 2.3mJ (off) Test Condition: 800V, 8A, 120Ohm, 15V Gate Charge: 26.5 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 32 A Power - Max: 54 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGA90N33TC | IXYS | Description: IGBT 330V 90A 200W TO263AA Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A Supplier Device Package: TO-263AA Gate Charge: 69 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 330 V Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGB200N60B3 | IXYS | Description: IGBT 600V 75A 1250W PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A Supplier Device Package: PLUS264™ IGBT Type: PT Td (on/off) @ 25°C: 44ns/310ns Switching Energy: 1.6mJ (on), 2.9mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 750 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 1250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGB200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 1250mW 3-Pin(3+Tab) PLUS 264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGB200N60B3 | IXYS | IGBT Transistors GenX3 600V IGBT | auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGB75N60BD1 | IXYS | Description: IGBT 600V 120A 360W PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: PLUS264™ Td (on/off) @ 25°C: 62ns/220ns Switching Energy: 3.3mJ (off) Test Condition: 480V, 75A, 5Ohm, 15V Gate Charge: 248 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 360 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC12N60C | IXYS | Description: IGBT 600V 15A 85W ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: ISOPLUS220™ Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 85 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC12N60CD1 | IXYS | Description: IGBT 600V 15A 85W ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: ISOPLUS220™ Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 85 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC16N60B2 | IXYS | Description: IGBT 600V 28A 63W ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A Supplier Device Package: ISOPLUS220™ IGBT Type: PT Td (on/off) @ 25°C: 25ns/70ns Switching Energy: 150mJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 63 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC16N60B2D1 | IXYS | Description: IGBT 600V 28A 63W ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 12A Supplier Device Package: ISOPLUS220™ IGBT Type: PT Td (on/off) @ 25°C: 25ns/70ns Switching Energy: 150mJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 63 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC16N60C2 | IXYS | Description: IGBT 600V 20A 63W ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: ISOPLUS220™ IGBT Type: PT Td (on/off) @ 25°C: 25ns/60ns Switching Energy: 60µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 63 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC16N60C2 | IXYS | IGBT Transistors 8 Amps 600V 3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC16N60C2D1 | IXYS | Description: IGBT 600V 20A 63W ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: ISOPLUS220™ IGBT Type: PT Td (on/off) @ 25°C: 25ns/60ns Switching Energy: 60µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 63 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGC16N60C2D1 | IXYS | IGBT Transistors 8 Amps 600V 3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGE200N60B | IXYS | Description: IGBT MOD 600V 160A ISOPLUS227 Packaging: Tube Package / Case: ISOPLUS227™ Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A NTC Thermistor: No Supplier Device Package: ISOPLUS227™ Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 416 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGE200N60B | IXYS | IGBTs 175 Amps 600V 2.1 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF20N250 | IXYS | Description: IGBT 2500V 23A ISOPLUSI4 Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A Supplier Device Package: ISOPLUS i4-PAC™ Gate Charge: 53 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 105 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF20N250 | IXYS | IGBT Transistors DiscIGBT NPT-Very Hi Voltage I4-PAK ISO+ | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF20N300 | Littelfuse | Trans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF20N300 | IXYS | Description: IGBT 3000V 22A ISOPLUSI4 Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A Supplier Device Package: ISOPLUS i4-PAC™ Gate Charge: 31 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 103 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF20N300 | IXYS | IGBTs ISOPLUS 3KV 22A IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF20N300 | Littelfuse | Trans IGBT Chip N-CH 3000V 22A 100W 3-Pin ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF20N300 | IXYS | IXGF20N300 THT IGBT transistors | auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGF25N250 | IXYS | Description: IGBT 2500V 30A 114W I4-PAK Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Gate Charge: 75 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 114 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF25N250 Produktcode: 149950 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGF25N250 | IXYS | IGBT Transistors IGBT NPT-VERY HIVOLT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF25N250 | Littelfuse | Trans IGBT Chip N-CH 2500V 30A 114000mW 3-Pin(3+Tab) ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF25N300 | IXYS | Description: IGBT 3000V 27A 114W I4-PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF25N300 | IXYS | IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF25N300 | Littelfuse | Trans IGBT Chip N-CH 3000V 27A 114000mW 3-Pin ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF30N400 | IXYS | Description: IGBT 4000V 30A 160W I4-PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF30N400 | Littelfuse | Trans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF30N400 | IXYS | IGBT Transistors IGBT NPT-HI VOLTAGE | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF30N400 | Littelfuse | Trans IGBT Chip N-CH 4000V 30A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF30N400 Produktcode: 167341 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGF32N170 | IXYS | IXGF32N170 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF32N170 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGF32N170 - IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung Vce(on): 3.5 DC-Kollektorstrom: 44 Anzahl der Pins: 3 Bauform - Transistor: ISOPLUS i4-PAC Kollektor-Emitter-Spannung V(br)ceo: 1.7 Verlustleistung Pd: 200 Betriebstemperatur, max.: 150 Produktpalette: - SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF32N170 | IXYS | Description: IGBT 1700V 44A 200W I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 32A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Td (on/off) @ 25°C: 45ns/270ns Switching Energy: 10.6mJ (off) Test Condition: 1020V, 32A, 2.7Ohm, 15V Gate Charge: 146 nC Current - Collector (Ic) (Max): 44 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 200 A Power - Max: 200 W | auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGF32N170 | IXYS | IGBTs 26 Amps 1700V 3.5 V Rds | auf Bestellung 149 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGF32N170 | Littelfuse | Trans IGBT Chip 1700V 44A 200000mW 3-Pin ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF36N300 | IXYS | Description: IGBT 3000V 36A 160W I4-PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF36N300 | IXYS | IGBT Transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGF36N300 | Littelfuse | Trans IGBT Chip N-CH 3000V 36A 160000mW 3-Pin(3+Tab) ISOPLUS I4-PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH100N30C3 | IXYS | IGBT Transistors 100 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH100N30C3 | IXYS | Description: IGBT 300V 75A 460W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 23ns/105ns Switching Energy: 230µJ (on), 520µJ (off) Test Condition: 200V, 50A, 2Ohm, 15V Gate Charge: 162 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 500 A Power - Max: 460 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N100 | IXYS | Description: IGBT 1000V 20A 100W TO247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N100 | IXYS | IGBT Transistors 1000V 20A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N100A | IXYS | Description: IGBT 1000V 20A 100W TO247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N100A | IXYS | IGBT Transistors 10 Amps 1000V 4 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N100AU1 | IXYS | Description: IGBT 1000V 20A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/550ns Switching Energy: 2mJ (off) Test Condition: 800V, 10A, 150Ohm, 15V Gate Charge: 52 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N100U1 | IXYS | Description: IGBT 1000V 20A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/550ns Switching Energy: 2mJ (off) Test Condition: 800V, 10A, 150Ohm, 15V Gate Charge: 52 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N170 | IXYS | IXGH10N170 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N170 | IXYS | IGBTs 20 Amps 1700 V 4 V Rds | auf Bestellung 299 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH10N170 | IXYS | Description: IGBT 1700V 20A 110W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 32 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 70 A Power - Max: 110 W | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH10N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 10A 110000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N170A | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Technology: NPT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 5A Pulsed collector current: 20A Turn-on time: 107ns Turn-off time: 240ns Type of transistor: IGBT Power dissipation: 140W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 29nC Mounting: THT Case: TO247-3 | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH10N170A | IXYS | IGBTs 20 Amps 1700 V 7 V Rds | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH10N170A | IXYS | Description: IGBT NPT 1700V 10A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/190ns Switching Energy: 380µJ (off) Test Condition: 850V, 10A, 22Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 20 A Power - Max: 140 W | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH10N170A | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 5A; 140W; TO247-3 Technology: NPT Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 5A Pulsed collector current: 20A Turn-on time: 107ns Turn-off time: 240ns Type of transistor: IGBT Power dissipation: 140W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 29nC Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke | auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH10N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 10A 110W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N300 | IXYS | Description: IGBT 3000V 18A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A Supplier Device Package: TO-247AD Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH10N300 | Ixys Corporation | Trans IGBT Chip N-CH 3000V 18A 100W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH120N30B3 | IXYS | IGBTs 120 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH120N30B3 | IXYS | IXGH120N30B3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH120N30B3 | IXYS | Description: IGBT 300V 75A 540W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 120A Supplier Device Package: TO-247AD IGBT Type: PT Gate Charge: 225 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 480 A Power - Max: 540 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH120N30C3 | IXYS | Description: IGBT 300V 75A 540W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 28ns/109ns Switching Energy: 230µJ (on), 730µJ (off) Test Condition: 200V, 60A, 2Ohm, 15V Gate Charge: 230 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 600 A Power - Max: 540 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH120N30C3 | IXYS | IGBTs 120 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH120N30C3 | IXYS | IXGH120N30C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N100 | IXYS | Description: IGBT 1000V 24A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/850ns Switching Energy: 2.5mJ (off) Test Condition: 800V, 12A, 120Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N100 | IXYS | IGBT Transistors 24Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N120A2D1 | IXYS | Description: IGBT 1200V 12A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N120A2D1 | IXYS | MOSFET 24 Amps 1200V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO247-3 Mounting: THT Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N120A3 | IXYS | Description: IGBT 1200V 22A 100W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-247AD IGBT Type: PT Gate Charge: 20.4 nC Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W | auf Bestellung 1620 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH12N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO247-3 Mounting: THT Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N120A3 | IXYS | IGBTs GenX3 1200V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N60B | IXYS | Description: IGBT 600V 24A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 20ns/150ns Switching Energy: 500µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N60BD1 | IXYS | Description: IGBT 600V 24A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 20ns/150ns Switching Energy: 500µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N60C | IXYS | Description: IGBT 600V 24A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N60CD1 | IXYS | Description: IGBT 600V 24A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N90C | IXYS | IGBTs 24 Amps 900V 3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH12N90C | IXYS | Description: IGBT 900V 24A 100W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 20ns/135ns Switching Energy: 320µJ (off) Test Condition: 720V, 12A, 22Ohm, 15V Gate Charge: 33 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120B | IXYS | IGBTs 30 Amps 1200V 3.2 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120B | IXYS | Description: IGBT 1200V 30A 180W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 180 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120B2D1 | IXYS | IGBT Transistors 30 Amps 1200V 2.7 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120B2D1 | IXYS | Description: IGBT 1200V 30A 192W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 165 ns Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/165ns Switching Energy: 1.4mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 86 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 192 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120BD1 | IXYS | Description: IGBT 1200V 30A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120BD1 | IXYS | IGBTs 30 Amps 1200V 3.2 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120C | IXYS | Description: IGBT 1200V 30A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 1.05mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 69 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120CD1 | IXYS | Description: IGBT 1200V 30A 150W TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 1.05mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120CD1 | IXYS | IGBTs 30 Amps 1200V 3.8 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH15N120CD1 | IXYS | MODULE | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGH16N170 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH16N170 - IGBT, 32 A, 2.7 V, 190 W, 1.7 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.7V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 190W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 32A SVHC: Lead (17-Jan-2023) | auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH16N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 32A 190W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170 | IXYS | IGBTs 32 Amps 1700 V 3.5 V Rds | auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH16N170 Produktcode: 119539 | IXYS | Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247 Vces: 1700 V Vce: 3,5 V Ic 25: 32 A Ic 100: 16 A | auf Bestellung 9 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGH16N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 32A 190000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170 | IXYS | IXGH16N170 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 32A 190W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170 | IXYS | Description: IGBT NPT 1700V 32A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 45ns/400ns Switching Energy: 9.3mJ (off) Test Condition: 1360V, 16A, 10Ohm, 15V Gate Charge: 78 nC Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 80 A Power - Max: 190 W | auf Bestellung 2849 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH16N170A | IXYS | IXGH16N170A THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 16A 190W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170A | IXYS | Description: IGBT 1700V 16A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 900µJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 190 W | auf Bestellung 254 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH16N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 16A 190W 3-Pin(3+Tab) TO-247AD | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH16N170A | IXYS | IGBTs 32 Amps 1700 V 5 V Rds | auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH16N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 16A 190W 3-Pin(3+Tab) TO-247AD | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH16N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247AD | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH16N170AH1 | IXYS | IGBT Transistors 11 Amps 1700V 5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170AH1 | Littelfuse | Trans IGBT Chip N-CH 1700V 16A 190000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N170AH1 | IXYS | Description: IGBT 1700V 16A 190W TO247 Packaging: Box Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 230 ns Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 36ns/160ns Switching Energy: 900µJ (off) Test Condition: 850V, 16A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N60B2 | IXYS | IGBTs 600V 16A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N60B2D1 | IXYS | IGBT Transistors 16 Amps 600V 2.3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N60B2D1 | IXYS | Description: IGBT 600V 40A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/73ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 24 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N60C2D1 | IXYS | IGBT Transistors 16 Amps 600V 3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH16N60C2D1 | IXYS | Description: IGBT 600V 40A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/75ns Switching Energy: 160µJ (on), 90µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100 | Littelfuse | Trans IGBT Chip N-CH 1000V 34A 150000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100 | IXYS | IGBT Transistors 17 Amps 1000V 4 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100 | IXYS | Description: IGBT 1000V 34A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 3mJ (off) Test Condition: 800V, 17A, 82Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 68 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100A | IXYS | IGBT Transistors 17 Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100A | IXYS | Description: IGBT 1000V 34A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 3mJ (off) Test Condition: 800V, 17A, 82Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 68 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100A | ixys | 07+ | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGH17N100AU1 | IXYS | IGBT Transistors 17 Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100AU1 | IXYS | Description: IGBT 1000V 34A 150W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 3mJ (off) Test Condition: 800V, 17A, 82Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 68 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100U1 | IXYS | IGBT Transistors 17 Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH17N100U1 | IXYS | Description: IGBT 1000V 34A 150W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 3mJ (off) Test Condition: 800V, 17A, 82Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 68 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH1961 | Littelfuse | IXGH1961^IXYS | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N100 | IXYS | Description: IGBT 1000V 40A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/350ns Switching Energy: 3.5mJ (off) Test Condition: 800V, 20A, 47Ohm, 15V Gate Charge: 73 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120 | IXYS | IGBTs 40 Amps 1200V 3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120 | IXYS | Description: IGBT 1200V 40A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 28ns/400ns Switching Energy: 6.5mJ (off) Test Condition: 800V, 20A, 47Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120A3 | IXYS | Description: IGBT 1200V 40A 180W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/290ns Switching Energy: 2.85mJ (on), 6.47mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO247-3 Mounting: THT Gate charge: 50nC Kind of package: tube Collector current: 20A Pulsed collector current: 120A Turn-on time: 66ns Turn-off time: 1.53µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 158 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH20N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO247-3 Mounting: THT Gate charge: 50nC Kind of package: tube Collector current: 20A Pulsed collector current: 120A Turn-on time: 66ns Turn-off time: 1.53µs Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH20N120A3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH20N120A3 - IGBT, 40A, 2.5V, 180W, 1.2kV, TO-247AD, 3 Pins Kollektor-Emitter-Spannung, max.: 1.2 Verlustleistung: 180 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 40 Bauform - Transistor: TO-247AD Kollektor-Emitter-Sättigungsspannung: 2.5 Betriebstemperatur, max.: 150 Produktpalette: - SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120A3 | IXYS | IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | auf Bestellung 229 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH20N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120B | IXYS | Description: IGBT 1200V 40A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 2.1mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 72 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120BD1 | IXYS | IGBT Transistors 20 Amps 1200V 3.40 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120BD1 | IXYS | Description: IGBT 1200V 40A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 2.1mJ (off) Gate Charge: 72 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120IH | IXYS | Description: IGBT 1200V TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Voltage - Collector Emitter Breakdown (Max): 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N120IH | IXYS | MOSFETs 20 Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N140C3H1 | IXYS | IGBT Transistors GenX3 1400V IGBTs w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N140C3H1 | IXYS | Description: IGBT 1400V 42A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/110ns Switching Energy: 1.35mJ (on), 440µJ (off) Test Condition: 700V, 20A, 5Ohm, 15V Gate Charge: 88 nC Current - Collector (Ic) (Max): 42 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 108 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N160 | IXYS | IGBTs 600V 40A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N160 | IXYS | Description: IGBT 600V 40A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N60 | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 20A, 82Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N60A | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 20A, 82Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N60AU1 | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N60B | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/150ns Switching Energy: 150µJ (on), 700µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N60BD1 | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/110ns Switching Energy: 700µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH20N60BU1 | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-247AD Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH22N140IH | IXYS | Description: IGBT 1400V TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Voltage - Collector Emitter Breakdown (Max): 1400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH22N140IH | IXYS | MOSFETs 22 Amps 1400V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH240N30PB | IXYS | Description: IGBT 300V 48A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 300 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH240N30PB | IXYS | IGBTs 240 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 48A 250W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N120C3 | IXYS | Description: IGBT PT 1200V 48A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/93ns Switching Energy: 1.16mJ (on), 470µJ (off) Test Condition: 600V, 20A, 5Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W | auf Bestellung 1103 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH24N120C3 | IXYS | IGBTs 48 Amps 1200V | auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH24N120C3 | IXYS | IXGH24N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N120C3H1 | IXYS | Description: IGBT 1200V 48A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/93ns Switching Energy: 1.16mJ (on), 470µJ (off) Test Condition: 600V, 20A, 5Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N120C3H1 | IXYS | IGBTs High Frequency Range 40khz C-IGBT w/Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N120C3H1 | IXYS | IXGH24N120C3H1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N120IH | IXYS | IGBTs 24 Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N120IH | IXYS | Description: IGBT 1200V TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Voltage - Collector Emitter Breakdown (Max): 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170 | IXYS | IXGH24N170 THT IGBT transistors | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH24N170 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH24N170 - IGBT, 50 A, 2.5 V, 250 W, 1.7 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 50A SVHC: Lead (17-Jan-2023) | auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH24N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170 | IXYS | Description: IGBT 1700V 50A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 42ns/200ns Switching Energy: 8mJ (off) Test Condition: 1360V, 50A, 5Ohm, 15V Gate Charge: 106 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH24N170 | IXYS | IGBTs 50 Amps 1700V 3.3 V Rds | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH24N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 50A 250W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170A | IXYS | Description: IGBT 1700V 24A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 21ns/336ns Switching Energy: 2.97mJ (on), 790µJ (off) Test Condition: 850V, 24A, 10Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 75 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170A | IXYS | IGBTs 24 Amps 1200 V 5 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 25A 250W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170A | IXYS | IXGH24N170A THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 25A 250000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170AH1 | IXYS | Description: IGBT 1700V 24A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 21ns/336ns Switching Energy: 2.97mJ (on), 790µJ (off) Test Condition: 850V, 24A, 10Ohm, 15V Gate Charge: 140 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 75 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N170AH1 | IXYS | IGBT Transistors High Voltage IGBT w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60A | IXYS | Description: IGBT 600V 48A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247AD Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60A | IXYS | MODULE | auf Bestellung 92 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGH24N60AU1 | IXYS | Description: IGBT 600V 48A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 600µJ (on), 1.5mJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60B | IXYS | Description: IGBT 600V 48A 150W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 600µJ (on), 800µJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 90 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60BU1 | IXYS | Description: IGBT 600V 48A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 600µJ (on), 800µJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 90 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60C | IXYS | Description: IGBT 600V 48A 150W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/75ns Switching Energy: 240µJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60C4 | IXYS | Description: IGBT 600V 56A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/143ns Switching Energy: 400µJ (on), 300µJ (off) Test Condition: 360V, 24A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Obsolete Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 130 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60C4D1 | IXYS | Description: IGBT 600V 56A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/143ns Switching Energy: 400µJ (on), 300µJ (off) Test Condition: 360V, 24A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Obsolete Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 130 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60CD1 | IXYS | Description: IGBT 600V 48A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/75ns Switching Energy: 240µJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH24N60CD1 Produktcode: 36487 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH25N100 | IXYS | IGBTs 1000V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N100 | IXYS | Description: IGBT 1000V 50A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 5mJ (off) Test Condition: 800V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N100A | IXYS | IGBT Transistors HIGH SPEED IGBT 1000V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N100A | IXYS | Description: IGBT 1000V 50A 200W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 5mJ (off) Test Condition: 800V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N100AU1 | IXYS | Description: IGBT 1000V 50A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 5mJ (off) Test Condition: 800V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N100AU1 | IXYS | IGBTs 1000V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N100U1 | IXYS | IGBTs 1000V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N100U1 | IXYS | Description: IGBT 1000V 50A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 5mJ (off) Test Condition: 800V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N120 | IXYS | Description: IGBT 1200V 50A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/650ns Switching Energy: 11mJ (off) Test Condition: 960V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N120 | IXYS | IGBTs 50 Amps 1200V 3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N120A | IXYS | IGBTs 25 Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N120A | IXYS | Description: IGBT 1200V 50A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/650ns Switching Energy: 11mJ (off) Test Condition: 960V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N160 | IXYS | IGBTs 75 Amps 1600V 2.5 Rds | auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH25N160 | Littelfuse | Trans IGBT Chip N-CH 1600V 75A 300W 3-Pin(3+Tab) TO-247 | auf Bestellung 3414 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH25N160 | IXYS | Description: IGBT NPT 1600V 75A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.7V @ 20V, 100A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N160 | Littelfuse | Trans IGBT Chip N-CH 1600V 75A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N160 | Littelfuse | Trans IGBT Chip N-CH 1600V 75A 300W 3-Pin(3+Tab) TO-247 | auf Bestellung 3414 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH25N160 | LITTELFUSE | Description: LITTELFUSE - IXGH25N160 - TRANSISTOR, IGBT, 1.6KV, 75A, TO-247 Kollektor-Emitter-Spannung, max.: 1.6 Verlustleistung: 300 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 75 Bauform - Transistor: TO-247 Kollektor-Emitter-Sättigungsspannung: 2.5 Betriebstemperatur, max.: 150 Produktpalette: - SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N160 | IXYS | IXGH25N160 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N250 | IXYS | Description: IGBT 2500V 60A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 75A Supplier Device Package: TO-247AD IGBT Type: NPT Gate Charge: 75 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N250 | Littelfuse | Trans IGBT Chip N-CH 2500V 60A 250000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N250 | Littelfuse | Trans IGBT Chip N-CH 2500V 60A 250W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N250 | IXYS | IXGH25N250 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH25N250 | IXYS | IGBTs TO247 2500V 60A IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH26N50 | TO-220 | auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGH28N120B | Ixys Corporation | Trans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N120B | IXYS | IGBT Transistors 28 Amps 1200V 3.50 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N120B | Ixys Corporation | Trans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD | auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH28N120B | Ixys Corporation | Trans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD | auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH28N120B | Ixys | Trans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N120B | Ixys Corporation | Trans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N120BD1 | Littelfuse | Trans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N120BD1 | IXYS | Description: IGBT PT 1200V 50A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/210ns Switching Energy: 2.2mJ (off) Test Condition: 960V, 28A, 5Ohm, 15V Gate Charge: 92 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N120BD1 | IXYS | IGBTs 28 Amps 1200V 3.50 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N140B3H1 | IXYS | Description: IGBT 1400V 60A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 16ns/190ns Switching Energy: 3.6mJ (on), 3.9mJ (off) Test Condition: 960V, 28A, 5Ohm, 15V Gate Charge: 88 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N140B3H1 | IXYS | IGBT Transistors Mid-Frequency Range 15khz-40khz w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N60A3 | IXYS | Description: IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N60A3 | IXYS | IGBT Transistors DISC IGBT PT-LOW FREQUENCY | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N60B | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/175ns Switching Energy: 2mJ (off) Test Condition: 480V, 28A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N60B3D1 | IXYS | Description: IGBT PT 600V 66A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/125ns Switching Energy: 340µJ (on), 650µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 66 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 190 W | auf Bestellung 248 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH28N60B3D1 | IXYS | IGBTs 600V, 28A at 110degreeC , TO-247AD-3 | auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH28N60B3D1 | IXYS | IXGH28N60B3D1 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 66A 190000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N60BD1 | IXYS | Description: IGBT 600V 40A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/175ns Switching Energy: 2mJ (off) Test Condition: 480V, 28A, 10Ohm, 15V Gate Charge: 68 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N90B | IXYS | IGBTs 51 Amps 900V 2.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH28N90B | IXYS | Description: IGBT 900V 51A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 30ns/100ns Switching Energy: 1.2mJ (off) Test Condition: 720V, 28A, 4.7Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH2N250 | Littelfuse | Trans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH2N250 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 2A Pulsed collector current: 13.5A Turn-on time: 115ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 32W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 10.5nC Technology: NPT Case: TO247-3 | auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH2N250 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 2A Pulsed collector current: 13.5A Turn-on time: 115ns Turn-off time: 278ns Type of transistor: IGBT Power dissipation: 32W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 10.5nC Technology: NPT Case: TO247-3 Anzahl je Verpackung: 1 Stücke | auf Bestellung 279 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH2N250 | Littelfuse | Trans IGBT Chip N-CH 2500V 5.5A 32000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH2N250 | IXYS | IGBTs TO247 2500V 2A IGBT | auf Bestellung 636 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH2N250 | IXYS | Description: IGBT 2500V 5.5A 32W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 2A Supplier Device Package: TO-247AD Gate Charge: 10.5 nC Part Status: Active Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 13.5 A Power - Max: 32 W | auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH30N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 60A 300W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3 | IXYS | IGBTs TO247 1200V 60A IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3 | IXYS | Description: DISC IGBT PT-MID FREQUENCY TO-24 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/127ns Switching Energy: 3.47mJ (on), 2.16mJ (off) Test Condition: 960V, 30A, 5Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3D1 | IXYS | Description: IGBT 1200V 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/127ns Switching Energy: 3.47mJ (on), 2.16mJ (off) Test Condition: 960V, 30A, 5Ohm, 15V Gate Charge: 87 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH30N120B3D1 | Littelfuse | Trans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3D1 | Littelfuse | Trans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3D1 | Littelfuse | Trans IGBT Chip 1200V 50A 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Turn-on time: 56ns Turn-off time: 471ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Turn-on time: 56ns Turn-off time: 471ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120B3D1 | IXYS | IGBTs 60 Amps 1200V | auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH30N120B3D1 Транзистор IGBT 1200V 300W TO247AD Produktcode: 162398 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH30N120BD1 | IXYS | MOSFET 50 Amps 1200V 3.5 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120BD1 | IXYS | Description: IGBT 1200V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120C3H1 | IXYS | IGBTs High Frequency Range 40khz C-IGBT w/Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120C3H1 | IXYS | Description: IGBT 1200V 48A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/106ns Switching Energy: 1.45mJ (on), 470µJ (off) Test Condition: 600V, 24A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 115 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120C3H1 | Littelfuse | Trans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 115A Turn-on time: 60ns Turn-off time: 415ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 24A Pulsed collector current: 115A Turn-on time: 60ns Turn-off time: 415ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N120IH | IXYS | Description: IGBT 1200V 50A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60A | IXYS | Description: IGBT 600V 50A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A Supplier Device Package: TO-247AD Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60B | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/130ns Switching Energy: 1.3mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 125 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60B2 | IXYS | Description: IGBT 600V 70A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 13ns/110ns Switching Energy: 320µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60B2 | IXYS | IGBT Transistors 30 Amps 600V 1.8 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60B2D1 Produktcode: 30215 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH30N60B2D1 | IXYS | Description: IGBT 600V 70A 190W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 13ns/110ns Switching Energy: 320µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60B4 | IXYS | Description: IGBT 600V 66A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 440µJ (on), 700µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 66 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 156 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60BD1 | IXYS | Description: IGBT 600V 60A 200W TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/130ns Switching Energy: 1mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 110 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60BU1 | IXYS | IGBT Transistors 60 Amps 600V 1.8 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60BU1 | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/130ns Switching Energy: 1mJ (off) Test Condition: 480V, 30A, 4.7Ohm, 15V Gate Charge: 110 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C2 | IXYS | Description: IGBT 600V 70A 190W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C2D1 | IXYS | Description: IGBT 600V 70A 190W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 13ns/70ns Switching Energy: 190µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C2D4 | IXYS | Description: IGBT 600V 60A TO247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3 | IXYS/Littelfuse | Транзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD | auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH30N60C3 | IXYS | Description: IGBT 600V 60A 220W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 16ns/42ns Switching Energy: 270µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3 | IXYS | IGBTs 30 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3C1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH30N60C3C1 - IGBT, Einzeltransistor, Siliziumkarbid, 60A, 3V, 220W, 600V, TO-247, 3 Pins Kollektor-Emitter-Spannung, max.: 600 Verlustleistung: 220 Anzahl der Pins: 3 Bauform - Transistor: TO-247 Kollektor-Emitter-Sättigungsspannung: 3 Kollektorstrom: 60 Betriebstemperatur, max.: 150 Produktpalette: - SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3C1 | IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A | auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGH30N60C3C1 | IXYS | Description: IGBT 600V 60A 220W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 17ns/42ns Switching Energy: 120µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3D1 | LITTELFUSE | Description: LITTELFUSE - IXGH30N60C3D1 - IGBT, 60 A, 2.6 V, 220 W, 600 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 220W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: GenX3 Series Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 60A SVHC: To Be Advised | auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH30N60C3D1 | IXYS | IGBTs High Frequency Range 40khz C-IGBT w/Diod | auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247 | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247 | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH30N60C3D1 | IXYS | Description: IGBT 600V 60A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 16ns/42ns Switching Energy: 270µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W | auf Bestellung 1373 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH30N60C3D1 Produktcode: 164623 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH30N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220W 3-Pin(3+Tab) TO-247 | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH31N60 | IXYS | Description: IGBT 600V 60A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/400ns Switching Energy: 6mJ (off) Test Condition: 480V, 31A, 10Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH31N60 | IXYS | IGBT Transistors 60 Amps 600V 1.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH31N60D1 | IXYS | IGBT Transistors 60 Amps 600V 1.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH31N60D1 | IXYS | Description: IGBT 600V 60A 150W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 31A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 15ns/400ns Switching Energy: 6mJ (off) Test Condition: 480V, 31A, 10Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH31N60U1 | IXYS | IGBT Transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N100A3 | IXYS | Description: IGBT 1000V 75A 300W TO247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH32N120A3 | IXYS | IGBTs 32 Amps 1200V | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH32N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH32N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 300000mW 3-Pin(3+Tab) TO-247AD | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH32N120A3 | LITTELFUSE | Description: LITTELFUSE - IXGH32N120A3 - IGBT, 75 A, 2.35 V, 300 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.35V usEccn: EAR99 euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: GenX3 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 75A SVHC: To Be Advised | auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH32N120A3 | IXYS | IXGH32N120A3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N120A3 | IXYS | Description: IGBT 1200V 75A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: PT Gate Charge: 89 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 230 A Power - Max: 300 W | auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH32N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD | auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH32N170 | IXYS | IGBTs 72 Amps 1700 V 3.3 V Rds | auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH32N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 75A 350000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N170 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH32N170 - IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung: 2.5 MSL: MSL 1 - unbegrenzt Verlustleistung: 350 Bauform - Transistor: TO-247AD Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7 Betriebstemperatur, max.: 150 Kontinuierlicher Kollektorstrom: 75 SVHC: No SVHC (12-Jan-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N170 Produktcode: 140302 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH32N170 | IXYS | IXGH32N170 THT IGBT transistors | auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH32N170 | IXYS | Description: IGBT 1700V 75A 350W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 45ns/270ns Switching Energy: 11mJ (off) Test Condition: 1020V, 32A, 2.7Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W | auf Bestellung 779 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH32N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 75A 350W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N170A | IXYS | Description: IGBT 1700V 32A 350W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/260ns Switching Energy: 1.5mJ (off) Test Condition: 850V, 32A, 2.7Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 110 A Power - Max: 350 W | auf Bestellung 1485 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH32N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 32A 350W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N170A | IXYS | IGBTs VRY HI VOLT NPT IGBT 1700V, 72A | auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH32N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 32A 350000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N170A Produktcode: 129525 | Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247 Vces: 1700 V Vce: 5 V Ic 25: 32 A Ic 100: 21 A td(on)/td(off) 100-150 Grad: 46/260 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH32N170A | IXYS | IXGH32N170A THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60A | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGH32N60AU1 | IXYS | IGBT Transistors 32 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60AU1 | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/120ns Switching Energy: 1.8mJ (off) Test Condition: 480V, 32A, 4.7Ohm, 15V Gate Charge: 125 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60B | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGH32N60B | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/100ns Switching Energy: 800µJ (off) Test Condition: 480V, 32A, 4.7Ohm, 15V Gate Charge: 125 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60BD1 | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/100ns Switching Energy: 600µJ (off) Test Condition: 480V, 32A, 4.7Ohm, 15V Gate Charge: 110 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60BU1 | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/100ns Switching Energy: 600µJ (off) Test Condition: 480V, 32A, 4.7Ohm, 15V Gate Charge: 110 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60BU1 | IXYS | IGBT Transistors 60 Amps 600V 2.3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60C | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/85ns Switching Energy: 320µJ (off) Test Condition: 480V, 32A, 4.7Ohm, 15V Gate Charge: 110 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60C | IXYS | IGBT Transistors 60 Amps 600V 2.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60CD1 | IXYS | IGBT Transistors 60 Amps 600V 2.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60CD1 | IXYS | MODULE | auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGH32N60CD1 | IXYS | Description: IGBT 600V 60A 200W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/85ns Switching Energy: 320µJ (off) Test Condition: 480V, 32A, 4.7Ohm, 15V Gate Charge: 110 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N60CD1 (IGBT-Transistor) Produktcode: 49455 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH32N90B2 | IXYS | Description: IGBT 900V 64A 300W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N90B2 | IXYS | IGBTs 32 Amps 900V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N90B2D1 | IXYS | IGBT Transistors 32 Amps 900V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH32N90B2D1 | IXYS | Description: IGBT 900V 64A 300W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH34N60B2 | IXYS | Description: IGBT 600V 70A 190W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 24A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 13ns/150ns Switching Energy: 640µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 66 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH35N120B | IXYS | Description: IGBT 1200V 70A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 50ns/180ns Switching Energy: 3.8mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH35N120B | IXYS | IGBT Transistors 70 Amps 1200V 3.3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH35N120C | IXYS | MODULE | auf Bestellung 86 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGH35N120C | IXYS | Description: IGBT 1200V 70A 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 50ns/150ns Switching Energy: 3mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH35N120C транзистор IGBT Produktcode: 109599 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH36N60A3 | IXYS | Description: IGBT 600V 220W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/330ns Switching Energy: 740µJ (on), 3mJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 220 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60A3 | IXYS | IGBT Transistors GenX3 600V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60A3D4 | IXYS | IGBT Transistors 36 Amps 600V 2 Rds | auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGH36N60A3D4 | IXYS | Description: IGBT 600V 220W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 3 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/330ns Switching Energy: 740µJ (on), 3mJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 220 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Pulsed collector current: 200A Collector-emitter voltage: 600V Turn-on time: 45ns Turn-off time: 350ns Collector current: 36A Gate-emitter voltage: ±20V | auf Bestellung 232 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH36N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 92A 250000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3 | IXYS | Description: IGBT PT 600V 92A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/125ns Switching Energy: 540µJ (on), 800µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 92 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W | auf Bestellung 121 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH36N60B3 | IXYS | IGBTs GenX3 600V IGBTs | auf Bestellung 793 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH36N60B3 | LITTELFUSE | Description: LITTELFUSE - IXGH36N60B3 - TRANSISTOR, IGBT, 600V, 92A, TO-247 Kollektor-Emitter-Spannung, max.: 600 Verlustleistung: 250 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 92 Bauform - Transistor: TO-247 Kollektor-Emitter-Sättigungsspannung: 1.5 Betriebstemperatur, max.: 150 Produktpalette: GenX3 Series SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Pulsed collector current: 200A Collector-emitter voltage: 600V Turn-on time: 45ns Turn-off time: 350ns Collector current: 36A Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 232 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH36N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 92A 250W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 250000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3C1 | IXYS | Description: IGBT 600V 75A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 20ns/125ns Switching Energy: 390µJ (on), 800µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 250W 3-Pin(3+Tab) TO-247 | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH36N60B3C1 | IXYS | IGBT Transistors 75Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3C1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Pulsed collector current: 200A Collector-emitter voltage: 600V Turn-on time: 47ns Turn-off time: 350ns Collector current: 36A Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH36N60B3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 250W 3-Pin(3+Tab) TO-247 | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH36N60B3C1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Pulsed collector current: 200A Collector-emitter voltage: 600V Turn-on time: 47ns Turn-off time: 350ns Collector current: 36A Gate-emitter voltage: ±20V | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH36N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 36A 250000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3D1 | IXYS | Description: IGBT 600V 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/125ns Switching Energy: 540µJ (on), 800µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3D1 | IXYS | IGBT Transistors 36 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3D4 | IXYS | Description: IGBT 600V 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/125ns Switching Energy: 540µJ (on), 800µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 80 nC Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH36N60B3D4 | IXYS | IGBT Transistors 200 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH38N60 | IXYS | Description: IGBT 600V 76A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 38A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 30ns/600ns Switching Energy: 9mJ (off) Test Condition: 480V, 38A, 10Ohm, 15V Gate Charge: 125 nC Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 152 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH38N60U1 | IXYS | Description: IGBT 600V 76A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 38A Supplier Device Package: TO-247AD Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH39N60B | IXYS | Description: IGBT 600V 76A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/250ns Switching Energy: 4mJ (off) Test Condition: 480V, 39A, 4.7Ohm, 15V Gate Charge: 110 nC Part Status: Obsolete Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 152 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH39N60BD1 | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IXGH39N60BD1 | IXYS | Description: IGBT 600V 76A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/250ns Switching Energy: 4mJ (off) Test Condition: 480V, 39A, 4.7Ohm, 15V Gate Charge: 110 nC Part Status: Obsolete Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 152 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH39N60BD1 Produktcode: 25259 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH40N120A2 | IXYS | Description: IGBT 1200V 75A 360W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 22ns/420ns Switching Energy: 15mJ (off) Test Condition: 960V, 40A, 2Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 360 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120A2 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Turn-on time: 55ns Turn-off time: 2.3µs Power dissipation: 360W Gate charge: 136nC Technology: PT Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120A2 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 360000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120A2 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Turn-on time: 55ns Turn-off time: 2.3µs Power dissipation: 360W Gate charge: 136nC Technology: PT Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120A2 | IXYS | IGBTs SGL IGBT 1200V, 80A | auf Bestellung 117 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH40N120B2D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A Turn-on time: 79ns Turn-off time: 770ns Power dissipation: 380W Gate charge: 138nC Technology: GenX3™; PT Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120B2D1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH40N120B2D1 - IGBT, 75 A, 2.9 V, 380 W, 1.2 kV, TO-247, 3 Pin(s) Kollektor-Emitter-Sättigungsspannung: 2.9 MSL: MSL 1 - unbegrenzt Verlustleistung: 380 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 Betriebstemperatur, max.: 150 Kontinuierlicher Kollektorstrom: 75 SVHC: No SVHC (07-Jul-2017) | auf Bestellung 221 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH40N120B2D1 | IXYS | IGBTs IGBT, Diode 1200V, 75A | auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH40N120B2D1 | IXYS | Description: IGBT 1200V 75A 380W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/290ns Switching Energy: 4.5mJ (on), 3mJ (off) Test Condition: 960V, 40A, 2Ohm, 15V Gate Charge: 138 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 380 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120B2D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A Turn-on time: 79ns Turn-off time: 770ns Power dissipation: 380W Gate charge: 138nC Technology: GenX3™; PT Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120B2D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3 | IXYS | IGBTs 75Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3 | IXYS | Description: IGBT 1200V 75A 380W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 17ns/130ns Switching Energy: 1.8mJ (on), 550µJ (off) Test Condition: 600V, 30A, 3Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 380 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A Turn-on time: 52ns Turn-off time: 475ns Power dissipation: 380W Gate charge: 142nC Technology: GenX3™; PT Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 380W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 200A Turn-on time: 52ns Turn-off time: 475ns Power dissipation: 380W Gate charge: 142nC Technology: GenX3™; PT Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3D1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH40N120C3D1 - IGBT, 75 A, 4.4 V, 380 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 4.4V usEccn: EAR99 euEccn: NLR Verlustleistung: 380W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: GenX3 Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 75A SVHC: No SVHC (12-Jan-2017) | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH40N120C3D1 Produktcode: 182236 | Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH40N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 180A Turn-on time: 52ns Turn-off time: 475ns Power dissipation: 380W Gate charge: 142nC Technology: GenX3™; PT Case: TO247-3 Collector-emitter voltage: 1.2kV Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3D1 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 380000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N120C3D1 | IXYS | IGBTs 75Amps 1200V | auf Bestellung 356 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH40N120C3D1 | IXYS | Description: IGBT PT 1200V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 17ns/130ns Switching Energy: 1.8mJ (on), 550µJ (off) Test Condition: 600V, 30A, 3Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 380 W | auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH40N120C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3 Type of transistor: IGBT Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 180A Turn-on time: 52ns Turn-off time: 475ns Power dissipation: 380W Gate charge: 142nC Technology: GenX3™; PT Case: TO247-3 Collector-emitter voltage: 1.2kV | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N30BD1 | IXYS | MODULE | auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGH40N60 | IXYS | IGBT Transistors G-series | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60 | IXYS | Description: IGBT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 3mJ (off) Test Condition: 480V, 40A, 22Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60A | IXYS | Description: IGBT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 3mJ (off) Test Condition: 480V, 40A, 22Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60A | IXYS | IGBT Transistors G-series | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60A3D1 | IXYS | MOSFET 40 Amps 600V 1.25 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60A3D1 | IXYS | Description: IGBT 600V TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD Part Status: Active Voltage - Collector Emitter Breakdown (Max): 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60A3D1 | Littelfuse | - TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60B | IXYS | Description: IGBT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 2.7mJ (off) Test Condition: 480V, 40A, 4.7Ohm, 15V Gate Charge: 116 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60B2 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/130ns Switching Energy: 400µJ (off) Test Condition: 400V, 30A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60B2D1 | IXYS | IGBT Transistors 40 Amps 600V 1.7 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60B2D1 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/130ns Switching Energy: 400µJ (off) Test Condition: 400V, 30A, 3.3Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60B2D1 Produktcode: 67024 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH40N60C | IXYS | Description: IGBT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 25ns/100ns Switching Energy: 850µJ (off) Test Condition: 480V, 40A, 4.7Ohm, 15V Gate Charge: 116 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60C | IXYS | IGBT Transistors 75 Amps 600V 2.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60C2 | IXYS | IGBTs 40 Amps 600V 2.7 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60C2 Produktcode: 30177 | Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247 Vces: 600 Vce: 2,5 Ic 25: 75 Ic 100: 40 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH40N60C2 | auf Bestellung 17 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IXGH40N60C2 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/90ns Switching Energy: 200µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 95 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60C2D1 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/90ns Switching Energy: 200µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 95 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH40N60C2D1 | IXYS | IGBT Transistors 75 Amps 600V 2.7 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH41N60 | IXYS | Description: IGBT 600V 76A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 41A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 30ns/600ns Switching Energy: 8mJ (off) Test Condition: 480V, 41A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 152 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH42N30C3 | IXYS | Description: IGBT 300V 223W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/113ns Switching Energy: 120µJ (on), 150µJ (off) Test Condition: 200V, 21A, 10Ohm, 15V Gate Charge: 76 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 250 A Power - Max: 223 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH42N30C3 | IXYS | IGBT Transistors 42 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH45N120 | IXYS | Description: IGBT 1200V 75A 300W TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 55ns/370ns Switching Energy: 14mJ (off) Test Condition: 960V, 45A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3 | IXYS | IGBTs 75 Amps 600V 1.05 V Rds | auf Bestellung 495 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH48N60A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 120A 300W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3 | LITTELFUSE | Description: LITTELFUSE - IXGH48N60A3 - TRANSISTOR, IGBT, 600V, 120A, TO-247 Kollektor-Emitter-Spannung, max.: 600 Verlustleistung: 300 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 120 Bauform - Transistor: TO-247 Kollektor-Emitter-Sättigungsspannung: 1.18 Betriebstemperatur, max.: 150 Produktpalette: GenX3 Series SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3 | IXYS | Description: IGBT PT 600V 120A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 25ns/334ns Switching Energy: 950µJ (on), 2.9mJ (off) Test Condition: 480V, 32A, 5Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 300 W | auf Bestellung 1125 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH48N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 120A 300W 3-Pin(3+Tab) TO-247 | auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH48N60A3 Produktcode: 133424 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH48N60A3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3D1 | IXYS | Description: IGBT PT 600V TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 25ns/334ns Switching Energy: 950µJ (on), 2.9mJ (off) Test Condition: 480V, 32A, 5Ohm, 15V Gate Charge: 110 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 300 W | auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH48N60A3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3D1 | IXYS | IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60A3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 110nC Kind of package: tube Turn-on time: 54ns Turn-off time: 925ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3 | IXYS | IGBT Modules 48 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3 | IXYS | Description: IGBT 600V 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 22ns/130ns Switching Energy: 840µJ (on), 660µJ (off) Test Condition: 480V, 30A, 5Ohm, 15V Gate Charge: 115 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3C1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 280A Turn-on time: 48ns Turn-off time: 347ns Gate charge: 115nC Anzahl je Verpackung: 1 Stücke | auf Bestellung 29 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH48N60B3C1 | IXYS | Description: IGBT 600V 75A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 22ns/130ns Switching Energy: 450µJ (on), 660µJ (off) Test Condition: 480V, 30A, 5Ohm, 15V Gate Charge: 115 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3C1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 280A Turn-on time: 48ns Turn-off time: 347ns Gate charge: 115nC | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH48N60B3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3C1 | IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3D1 | IXYS | Description: IGBT 600V 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 22ns/130ns Switching Energy: 840µJ (on), 660µJ (off) Test Condition: 480V, 30A, 5Ohm, 15V Gate Charge: 115 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247 | auf Bestellung 310 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH48N60B3D1 | LITTELFUSE | Description: LITTELFUSE - IXGH48N60B3D1 - TRANSISTOR, IGBT, 600V, 48A, TO-247 Kollektor-Emitter-Spannung, max.: 600 Verlustleistung: 300 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 48 Bauform - Transistor: TO-247 Kollektor-Emitter-Sättigungsspannung: 1.8 Betriebstemperatur, max.: 150 Produktpalette: GenX3 Series SVHC: To Be Advised | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247 | auf Bestellung 310 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH48N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 280A Turn-on time: 44ns Turn-off time: 347ns Gate charge: 115nC | auf Bestellung 339 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH48N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3D1 | IXYS | IGBTs 75 Amps 600V 1.05 V Rds | auf Bestellung 429 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH48N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 48A 300W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60B3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 48A Pulsed collector current: 280A Turn-on time: 44ns Turn-off time: 347ns Gate charge: 115nC Anzahl je Verpackung: 1 Stücke | auf Bestellung 339 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH48N60C3 | IXYS | IGBTs 48 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3 Produktcode: 155510 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH48N60C3 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/60ns Switching Energy: 410µJ (on), 230µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 77 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH48N60C3 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s) Kollektor-Emitter-Spannung, max.: 600 Verlustleistung: 300 Anzahl der Pins: 3 Kontinuierlicher Kollektorstrom: 75 Bauform - Transistor: TO-247 Kollektor-Emitter-Sättigungsspannung: 2.3 Betriebstemperatur, max.: 150 Produktpalette: GenX3 SVHC: No SVHC (16-Jan-2020) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH48N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 48A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 77nC Kind of package: tube Turn-on time: 45ns Turn-off time: 187ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3C1 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/60ns Switching Energy: 330µJ (on), 230µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 77 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3C1 | IXYS | IGBT Transistors 75Amps 600V | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGH48N60C3C1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3D1 Produktcode: 108583 | IXYS | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3D1 | IXYS | IGBTs 30 Amps 600V | auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH48N60C3D1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH48N60C3D1 - IGBT, 75 A, 2.3 V, 300 W, 600 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.3V usEccn: EAR99 euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: GenX3 Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 75A SVHC: No SVHC (12-Jan-2017) | auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH48N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 77nC Kind of package: tube Collector-emitter voltage: 600V Pulsed collector current: 250A Turn-on time: 45ns Turn-off time: 187ns Gate-emitter voltage: ±20V Collector current: 48A Anzahl je Verpackung: 1 Stücke | auf Bestellung 268 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH48N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 77nC Kind of package: tube Collector-emitter voltage: 600V Pulsed collector current: 250A Turn-on time: 45ns Turn-off time: 187ns Gate-emitter voltage: ±20V Collector current: 48A | auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH48N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 300000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH48N60C3D1 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 19ns/60ns Switching Energy: 410µJ (on), 230µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 77 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 300 W | auf Bestellung 224 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH4N250C | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH4N250C | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage Mounting: THT Power dissipation: 150W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 57nC Case: TO247-3 Collector-emitter voltage: 2.5kV Gate-emitter voltage: ±20V Collector current: 13A Pulsed collector current: 8A Turn-off time: 350ns Type of transistor: IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH4N250C | IXYS | Description: IGBT 2500V 13A 150W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: -/350ns Switching Energy: 360µJ (off) Test Condition: 1250V, 4A, 20Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 46 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH4N250C | IXYS | IGBT Modules High Voltage IGBTs | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGH50N120C3 | IXYS | Description: IGBT 1200V 75A 460W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 20ns/123ns Switching Energy: 2.2mJ (on), 630µJ (off) Test Condition: 600V, 40A, 2Ohm, 15V Gate Charge: 196 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 250 A Power - Max: 460 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N120C3 | IXYS | IGBTs 75Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 75A 460W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N120C3 | IXYS | IXGH50N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N60A | IXYS | Description: IGBT 600V 75A 250W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 50ns/200ns Switching Energy: 4.8mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N60B | IXYS | Description: IGBT 600V 75A 300W TO247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 50ns/150ns Switching Energy: 3mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 160 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N60B2 | IXYS | Description: IGBT 600V 75A 400W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/190ns Switching Energy: 550µJ (off) Test Condition: 480V, 40A, 5Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 400 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N60C2 | IXYS | Description: IGBT 600V 75A 400W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/115ns Switching Energy: 380µJ (off) Test Condition: 480V, 40A, 2Ohm, 15V Gate Charge: 138 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 400 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N60C4 | IXYS | Description: IGBT 600V 90A 300W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 40ns/270ns Switching Energy: 950µJ (on), 840µJ (off) Test Condition: 400V, 36A, 10Ohm, 15V Gate Charge: 113 nC Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N90B2 | IXYS | IGBTs 50 Amps 900V 2.7 Rds | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH50N90B2 | IXYS | IXGH50N90B2 THT IGBT transistors | auf Bestellung 179 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH50N90B2 | IXYS | Description: IGBT 900V 75A 400W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 20ns/350ns Switching Energy: 4.7mJ (off) Test Condition: 720V, 50A, 5Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 200 A Power - Max: 400 W | auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH50N90B2D1 | Littelfuse | Trans IGBT Chip N-CH 900V 75A 400000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N90B2D1 | IXYS | Description: IGBT PT 900V 75A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 20ns/350ns Switching Energy: 4.7mJ (off) Test Condition: 720V, 50A, 5Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 200 A Power - Max: 400 W | auf Bestellung 112 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH50N90B2D1 | Littelfuse | Trans IGBT Chip N-CH 900V 75A 400W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH50N90B2D1 | IXYS | IGBTs 50 Amps 900V 2.7 Rds | auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH50N90B2D1 | IXYS | IXGH50N90B2D1 THT IGBT transistors | auf Bestellung 283 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH50N90B2D1 | LITTELFUSE | Description: LITTELFUSE - IXGH50N90B2D1 - IGBT, 75 A, 2.2 V, 400 W, 900 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 400W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: HiPerFAST Series Kollektor-Emitter-Spannung, max.: 900V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 75A SVHC: Boric acid (14-Jun-2023) | auf Bestellung 354 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH56N60A3 | IXYS | IGBT Modules GenX3 600V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH56N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 150A 330000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH56N60A3 | IXYS | Description: IGBT 600V 150A 330W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 44A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 26ns/310ns Switching Energy: 1mJ (on), 3.75mJ (off) Test Condition: 480V, 44A, 5Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 370 A Power - Max: 330 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH56N60B3 | IXYS | Description: DISC IGBT PT-MID FREQUENCY TO-24 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH56N60B3 | IXYS | IGBT Transistors Disc IGBT PT-Mid Frequency TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH56N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 56A 330000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH56N60B3D1 | IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH56N60B3D1 | IXYS | Description: IGBT 600V 330W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N30C3 | IXYS | IGBT Transistors 60 Amps 300V | auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGH60N30C3 | IXYS | Description: IGBT 300V 75A 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 23ns/108ns Switching Energy: 150µJ (on), 300µJ (off) Test Condition: 200V, 30A, 5Ohm, 15V Gate Charge: 101 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 420 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N30C3 | Littelfuse | Trans IGBT Chip N-CH 300V 75A 300W 3-Pin(3+Tab) TO-247AD | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH60N30C3 | Littelfuse | Trans IGBT Chip N-CH 300V 75A 300000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 50ns/300ns Switching Energy: 8mJ (off) Test Condition: 480V, 60A, 2.7Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60 | IXYS | IGBTs HIGH SPEED IGBT N-CHAN 600V 75A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60B2 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C2 | IXYS | IGBT Transistors 60 Amps 600V 2.5 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C2 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 480µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 146 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 480 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C2 Produktcode: 30178 | Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247 Vces: 600 Vce: 2,5 Ic 25: 75 Ic 100: 60 Pd 25: 480 | verfügbar 1 Stück: |
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| IXGH60N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C3 Produktcode: 113398 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH60N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C3 | IXYS | IGBTs GenX3 600V IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C3 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/70ns Switching Energy: 800µJ (on), 450µJ (off) Test Condition: 480V, 40A, 3Ohm, 15V Gate Charge: 115 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 360 A Power - Max: 380 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 380000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C3D1 | IXYS | IGBTs 60 Amps 600V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH60N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Case: TO247-3 Mounting: THT Turn-on time: 54ns Turn-off time: 198ns Type of transistor: IGBT Collector current: 60A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Power dissipation: 380W Kind of package: tube Gate charge: 115nC Technology: GenX3™; PT Pulsed collector current: 300A Anzahl je Verpackung: 1 Stücke | auf Bestellung 211 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH60N60C3D1 | IXYS | Description: IGBT PT 600V 75A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 21ns/70ns Switching Energy: 800µJ (on), 450µJ (off) Test Condition: 480V, 40A, 3Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 380 W | auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH60N60C3D1 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGH60N60C3D1 - IGBT, 75 A, 2.2 V, 380 W, 600 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V usEccn: EAR99 euEccn: NLR Verlustleistung: 380W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: GenX3 Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 75A SVHC: No SVHC (12-Jan-2017) | auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGH60N60C3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 380W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH60N60C3D1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Case: TO247-3 Mounting: THT Turn-on time: 54ns Turn-off time: 198ns Type of transistor: IGBT Collector current: 60A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Power dissipation: 380W Kind of package: tube Gate charge: 115nC Technology: GenX3™; PT Pulsed collector current: 300A | auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH60N60C3D1 Produktcode: 148221 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH64N60A3 | IXYS | Description: IGBT 600V 460W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH64N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH64N60A3 | IXYS | IGBT Modules GenX3 600V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH64N60B3 | IXYS | IGBTs GenX3 600V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH64N60B3 | IXYS | Description: IGBT 600V 460W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 25ns/138ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 480V, 50A, 3Ohm, 15V Gate Charge: 168 nC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 400 A Power - Max: 460 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH6N170 | IXYS | IXGH6N170 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH6N170 | IXYS | IGBTs 12 Amps 1700 V 4 V Rds | auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH6N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 12A 75W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH6N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH6N170 | IXYS | Description: IGBT 1700V 12A 75W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 40ns/250ns Switching Energy: 1.5mJ (off) Test Condition: 1360V, 6A, 33Ohm, 15V Gate Charge: 20 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 24 A Power - Max: 75 W | auf Bestellung 1320 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH6N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 6A 75W 3-Pin(3+Tab) TO-247AD | auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH6N170A | IXYS | IXGH6N170A THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH6N170A | IXYS | IGBTs 12 Amps 1700 V 7 V Rds | auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH6N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 6A 75W 3-Pin(3+Tab) TO-247AD | auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH6N170A | Littelfuse | Trans IGBT Chip N-CH 1700V 6A 75000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH6N170A | IXYS | Description: IGBT 1700V 6A 75W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/220ns Switching Energy: 590µJ (on), 180µJ (off) Test Condition: 850V, 6A, 33Ohm, 15V Gate Charge: 18.5 nC Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 14 A Power - Max: 75 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 540W 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Power dissipation: 540W Case: TO247-3 Mounting: THT Gate charge: 230nC Kind of package: tube Turn-off time: 885ns Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A Pulsed collector current: 400A Turn-on time: 61ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 255 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGH72N60A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Power dissipation: 540W Case: TO247-3 Mounting: THT Gate charge: 230nC Kind of package: tube Turn-off time: 885ns Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 72A Pulsed collector current: 400A Turn-on time: 61ns | auf Bestellung 255 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGH72N60A3 | IXYS | IGBTs 72 Amps 600V 1.35 Rds | auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH72N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 78A 540000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60A3 | IXYS | Description: IGBT 600V 75A 540W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 31ns/320ns Switching Energy: 1.38mJ (on), 3.5mJ (off) Test Condition: 480V, 50A, 3Ohm, 15V Gate Charge: 230 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 400 A Power - Max: 540 W | auf Bestellung 195 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGH72N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 540000mW 3-Pin(3+Tab) TO-247AD | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60B3 | IXYS | Description: IGBT 600V 75A 540W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 31ns/150ns Switching Energy: 1.38mJ (on), 1.05mJ (off) Test Condition: 480V, 50A, 3Ohm, 15V Gate Charge: 230 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 400 A Power - Max: 540 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60C3 Produktcode: 73163 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGH72N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 540W 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60C3 | IXYS | Description: IGBT 600V 75A 540W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 27ns/77ns Switching Energy: 1.03mJ (on), 480µJ (off) Test Condition: 480V, 50A, 2Ohm, 15V Gate Charge: 174 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 360 A Power - Max: 540 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60C3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 360A Mounting: THT Gate charge: 174nC Kind of package: tube Turn-on time: 62ns Turn-off time: 244ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH72N60C3 | IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 72A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH85N30C3 | IXYS | Description: IGBT 300V 75A 333W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 25ns/100ns Switching Energy: 200µJ (on), 390µJ (off) Test Condition: 200V, 42.5A, 3.3Ohm, 15V Gate Charge: 136 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 420 A Power - Max: 333 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH85N30C3 | IXYS | IGBTs 85 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH90N60B3 | IXYS | IXGH90N60B3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH90N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 75A 660000mW 3-Pin(3+Tab) TO-247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGH90N60B3 | IXYS | Description: IGBT 600V 75A 660W TO247 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGI48N60C3 | IXYS | Littelfuse | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGJ40N60C2D1 | IXYS | Description: IGBT 600V 75A 300W TO268 Packaging: Tube Package / Case: TO-220-3, Short Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-268 IGBT Type: PT Td (on/off) @ 25°C: 18ns/90ns Switching Energy: 200µJ (off) Test Condition: 400V, 30A, 3Ohm, 15V Gate Charge: 95 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGJ40N60C2D1 | IXYS | IGBT Transistors 40 Amps 600V 2.7 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK 50N60A2D1 | IXYS | Littelfuse | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK100N170 | IXYS | Description: IGBT PT 1000V 120A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Supplier Device Package: PLUS264™ Td (on/off) @ 25°C: 35ns/285ns Test Condition: 850V, 100A, 1Ohm, 15V Gate Charge: 425 nC Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 600 A Power - Max: 830 W | auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK100N170 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Collector current: 100A Pulsed collector current: 600A Turn-on time: 285ns Turn-off time: 720ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Case: TO264 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK100N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 170A 830W 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK100N170 | Littelfuse | Trans IGBT Chip N-CH 1700V 170A 830000mW 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK100N170 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264 Mounting: THT Collector current: 100A Pulsed collector current: 600A Turn-on time: 285ns Turn-off time: 720ns Type of transistor: IGBT Power dissipation: 830W Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 425nC Technology: NPT Case: TO264 Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK100N170 | IXYS | IGBTs HIGH VOLT NPT IGBTS 1700V 100A | auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK120N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 420nC Kind of package: tube Collector current: 120A Pulsed collector current: 600A Turn-on time: 105ns Turn-off time: 1365ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N120A3 | IXYS | IGBTs 120 Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N120A3 | IXYS | Description: IGBT PT 1200V 240A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 40ns/490ns Switching Energy: 10mJ (on), 33mJ (off) Test Condition: 960V, 100A, 1Ohm, 15V Gate Charge: 420 nC Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 600 A Power - Max: 830 W | auf Bestellung 423 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK120N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 420nC Kind of package: tube Collector current: 120A Pulsed collector current: 600A Turn-on time: 105ns Turn-off time: 1365ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 240A 830W 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 240A 830000mW 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N120B3 | IXYS | IGBTs 200Amps 1200V | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK120N120B3 | IXYS | Description: IGBT 1200V 200A 830W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 36ns/275ns Switching Energy: 5.5mJ (on), 5.8mJ (off) Test Condition: 600V, 100A, 2Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 370 A Power - Max: 830 W | auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK120N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 470nC Kind of package: tube Collector current: 120A Pulsed collector current: 370A Turn-on time: 122ns Turn-off time: 885ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 830W Case: TO264 Mounting: THT Gate charge: 470nC Kind of package: tube Collector current: 120A Pulsed collector current: 370A Turn-on time: 122ns Turn-off time: 885ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N60B | IXYS | Description: IGBT 600V 200A 660W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 60ns/200ns Switching Energy: 2.4mJ (on), 5.5mJ (off) Test Condition: 480V, 100A, 2.4Ohm, 15V Gate Charge: 350 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 660 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N60B3 | IXYS | Description: DISC IGBT PT-MID FREQUENCY TO-26 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 40ns/227ns Switching Energy: 2.9mJ (on), 3.5mJ (off) Test Condition: 480V, 100A, 2Ohm, 15V Gate Charge: 465 nC Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 780 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK120N60C2 | IXYS | Description: IGBT PT 600V 75A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 40ns/120ns Switching Energy: 1.7mJ (on), 1mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 370 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 500 A Power - Max: 830 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK28N140B3H1 | IXYS | Description: IGBT 1400V 60A 300W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 28A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 16ns/190ns Switching Energy: 3.6mJ (on), 3.9mJ (off) Test Condition: 960V, 28A, 5Ohm, 15V Gate Charge: 88 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK28N140B3H1 | IXYS | IGBT Transistors 28 Amps 1400V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK28N140B3H1 | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| IXGK300N60B3 | IXYS | Description: IGBT 600V 1000W TO264AA Packaging: Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK300N60B3 | IXYS | IGBT Modules 300 Amps 600V 1.6 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK320N60A3 | IXYS | Description: IGBT 600V 320A 1000W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Gate Charge: 560 nC Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 700 A Power - Max: 1000 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK320N60A3 | IXYS | IGBT Transistors 320 Amps 600V | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGK320N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 1.7kW Case: TO264 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 320A Pulsed collector current: 1.2kA Turn-on time: 107ns Turn-off time: 595ns Gate charge: 585nC | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK320N60B3 | IXYS | Description: IGBT PT 600V 500A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 44ns/250ns Switching Energy: 2.7mJ (on), 3.5mJ (off) Test Condition: 480V, 100A, 1Ohm, 15V Gate Charge: 585 nC Part Status: Active Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 1200 A Power - Max: 1700 W | auf Bestellung 178 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK320N60B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; TO264 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 1.7kW Case: TO264 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 320A Pulsed collector current: 1.2kA Turn-on time: 107ns Turn-off time: 595ns Gate charge: 585nC Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK320N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 500A 1700000mW 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK320N60B3 | IXYS | IGBTs GenX3 600V IGBTs | auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK35N120B | IXYS | IGBT Transistors 70 Amps 1200V 3.3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK35N120B | IXYS | Description: IGBT 1200V 70A 350W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 50ns/180ns Switching Energy: 3.8mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 350 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK35N120BD1 | IXYS | Description: IGBT 1200V 70A 350W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A Supplier Device Package: TO-264 (IXGK) Td (on/off) @ 25°C: 50ns/180ns Switching Energy: 3.8mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 350 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK35N120BD1 | IXYS | IGBT Transistors 70 Amps 1200V 3.3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK35N120CD1 | IXYS | Description: IGBT 1200V 70A 350W PLUS247 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A Supplier Device Package: TO-264 (IXGK) Td (on/off) @ 25°C: 50ns/150ns Switching Energy: 3mJ (off) Test Condition: 960V, 35A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 350 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK35N120CD1 | IXYS | IGBT Transistors 70 Amps 1200V 4 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK400N30A3 | IXYS | IXGK400N30A3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK400N30A3 | Littelfuse | Trans IGBT Chip N-CH 300V 400A 1000000mW 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK400N30A3 | Littelfuse | Trans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264 | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGK400N30A3 | IXYS | Description: IGBT PT 300V 400A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Gate Charge: 560 nC Part Status: Active Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 1200 A Power - Max: 1000 W | auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK400N30A3 | IXYS | IGBTs 400 Amps 300V | auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK400N30A3 | Littelfuse | Trans IGBT Chip N-CH 300V 400A 1000W 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK400N30B3 | IXYS | Description: IGBT 300V 400A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-264 (IXGK) Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 300 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK400N30B3 | IXYS | IGBT Transistors 400 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK400N30C3 | IXYS | IGBT Transistors 400 Amps 300V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK400N30C3 | IXYS | Description: IGBT 300V 400A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-264 (IXGK) Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 300 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N120C3H1 | IXYS | Description: IGBT 1200V 95A 460W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 31ns/123ns Switching Energy: 2mJ (on), 630µJ (off) Test Condition: 600V, 40A, 2Ohm, 15V Gate Charge: 196 nC Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 460 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N120C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT Mounting: THT Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N120C3H1 | IXYS | IGBTs High Frequency Range 40khz C-IGBT w/Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N120C3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO264 Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 60ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 196nC Technology: GenX3™; PT Mounting: THT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60A2U1 | IXYS | Description: IGBT 600V 75A 400W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) Td (on/off) @ 25°C: 20ns/410ns Switching Energy: 3.5mJ (off) Test Condition: 480V, 50A, 5Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 400 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60AU1 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGK50N60AU1 | IXYS | Description: IGBT 600V 75A 300W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) Td (on/off) @ 25°C: 50ns/200ns Switching Energy: 4.8mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60B | IXYS | Description: IGBT 600V 75A 300W TO264 Packaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) Td (on/off) @ 25°C: 50ns/150ns Switching Energy: 3mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 160 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60B2D1 | IXYS | Description: IGBT 600V 75A 400W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 18ns/190ns Switching Energy: 550µJ (off) Test Condition: 480V, 40A, 5Ohm, 15V Gate Charge: 140 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 400 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60BD1 | IXYS | Description: IGBT 600V 75A 300W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) Td (on/off) @ 25°C: 50ns/200ns Switching Energy: 1.5mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 110 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60BU1 | IXYS | Description: IGBT 600V 75A 300W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) Td (on/off) @ 25°C: 50ns/110ns Switching Energy: 3mJ (off) Test Condition: 480V, 50A, 2.7Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60BU1 | IXYS | IGBTs 75 Amps 600V 2.3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60C2D1 | IXYS | Description: IGBT 600V 75A 480W TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 18ns/115ns Switching Energy: 380µJ (off) Test Condition: 480V, 40A, 2Ohm, 15V Gate Charge: 138 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 480 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N60C2D1 | IXYS | IGBTs 50 Amps 600V 2.5V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N90B2D1 | IXYS | Description: IGBT 900V 75A 400W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 20ns/350ns Switching Energy: 4.7mJ (off) Test Condition: 720V, 50A, 5Ohm, 15V Gate Charge: 135 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 200 A Power - Max: 400 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK50N90B2D1 | IXYS | IGBTs 50 Amps 600V 3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK55N120A3H1 | IXYS | IGBTs Low-Frequency Range Low Vcesat w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK55N120A3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264 Mounting: THT Pulsed collector current: 400A Turn-on time: 70ns Turn-off time: 1253ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 185nC Technology: GenX3™; PT Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 55A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK55N120A3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; TO264 Mounting: THT Pulsed collector current: 400A Turn-on time: 70ns Turn-off time: 1253ns Type of transistor: IGBT Power dissipation: 460W Kind of package: tube Gate charge: 185nC Technology: GenX3™; PT Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 55A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK55N120A3H1 | IXYS | Description: IGBT 1200V 125A 460W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 23ns/365ns Switching Energy: 5.1mJ (on), 13.3mJ (off) Test Condition: 960V, 55A, 3Ohm, 15V Gate Charge: 185 nC Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 400 A Power - Max: 460 W | auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK60N60 | IXYS | Description: IGBT PT 600V 75A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 50ns/300ns Switching Energy: 8mJ (off) Test Condition: 480V, 60A, 2.7Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK60N60B2D1 | IXYS | TO-264 09+ | auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGK60N60B2D1 | IXYS | Description: IGBT PT 600V 75A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 28ns/160ns Switching Energy: 1mJ (off) Test Condition: 400V, 50A, 3.3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 500 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK60N60B2D1 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGK60N60C2D1 | IXYS | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGK60N60C2D1 | IXYS | IGBT Transistors 60 Amps 600V 2.5 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK60N60C2D1 | IXYS | Description: IGBT PT 600V 75A TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 18ns/95ns Switching Energy: 400µJ (on), 480µJ (off) Test Condition: 400V, 50A, 2Ohm, 15V Gate Charge: 146 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 480 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK64N60B3D1 | IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGK64N60B3D1 | IXYS | Description: IGBT 600V 460W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 25ns/138ns Switching Energy: 1.5mJ (on), 1mJ (off) Test Condition: 480V, 50A, 3Ohm, 15V Gate Charge: 168 nC Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 400 A Power - Max: 460 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK64N60B3D1 | Littelfuse | Trans IGBT Chip N-CH 600V 64A 460000mW 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK72N60A3H1 | IXYS | IGBT Transistors 75Amps 600V | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGK72N60A3H1 | IXYS | Description: IGBT 600V 75A 540W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 31ns/320ns Switching Energy: 1.4mJ (on), 3.5mJ (off) Test Condition: 480V, 50A, 3Ohm, 15V Gate Charge: 230 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 400 A Power - Max: 540 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK72N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK72N60B3H1 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO264 Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 600V Collector current: 72A Power dissipation: 540W Case: TO264 Gate-emitter voltage: ±20V Pulsed collector current: 450A Mounting: THT Gate charge: 225nC Kind of package: tube Turn-on time: 63ns Turn-off time: 370ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK72N60B3H1 | IXYS | IGBTs Mid-Frequency Range 15khz-40khz w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK72N60B3H1 | IXYS | Description: IGBT 600V 75A 540W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 31ns/152ns Switching Energy: 1.4mJ (on), 1mJ (off) Test Condition: 480V, 50A, 3Ohm, 15V Gate Charge: 225 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 450 A Power - Max: 540 W | auf Bestellung 850 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK72N60B3H1 | Littelfuse | Trans IGBT Chip N-CH 600V 178A 540W 3-Pin(3+Tab) TO-264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK72N60C3H1 | IXYS | Description: IGBT TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Supplier Device Package: TO-264 (IXGK) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK72N60C3H1 | IXYS | IGBTs 75Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK75N250 | Littelfuse | Trans IGBT Chip N-CH 2500V 170A 780W 3-Pin(3+Tab) TO-264AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK75N250 | Littelfuse | Trans IGBT Chip N-CH 2500V 170A 780000mW 3-Pin(3+Tab) TO-264AA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK75N250 | IXYS | IGBTs TO264 2500V 75A IGBT | auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK75N250 | IXYS | Description: IGBT NPT 2500V 170A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A Supplier Device Package: TO-264 (IXGK) IGBT Type: NPT Gate Charge: 410 nC Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 530 A Power - Max: 780 W | auf Bestellung 491 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGK75N250 | IXYS | IXGK75N250 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK82N120A3 | IXYS | IGBT Transistors GenX3 1200V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK82N120A3 | IXYS | Description: IGBT 1200V 260A 1250W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 34ns/265ns Switching Energy: 5.5mJ (on), 12.5mJ (off) Test Condition: 600V, 80A, 2Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 260 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 580 A Power - Max: 1250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK82N120A3 | IXYS | IXGK82N120A3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK82N120B3 | IXYS | IGBT Transistors GenX3 1200V IGBTs | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK82N120B3 | IXYS | Description: IGBT 1200V 230A 1250W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A Supplier Device Package: TO-264 (IXGK) IGBT Type: PT Td (on/off) @ 25°C: 30ns/210ns Switching Energy: 5mJ (on), 3.3mJ (off) Test Condition: 600V, 80A, 2Ohm, 15V Gate Charge: 350 nC Current - Collector (Ic) (Max): 230 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 500 A Power - Max: 1250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGK82N120B3 | IXYS | IXGK82N120B3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGL200N60B3 | IXYS | IGBT Transistors 150Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGL200N60B3 | IXYS | Description: IGBT 600V 150A 400W ISOPLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A Supplier Device Package: ISOPLUS264™ IGBT Type: PT Td (on/off) @ 25°C: 44ns/310ns Switching Energy: 1.6mJ (on), 2.9mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 750 nC Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 600 A Power - Max: 400 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGL50N60BD1 | IXYS | Description: IGBT 600V ISOPLUS264 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGL75N250 | IXYS | Description: IGBT 2500V 110A 430W I5-PAK | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGM17N100A | IXYS | Description: IGBT 1000V 34A 150W TO204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 3mJ (off) Test Condition: 800V, 17A, 82Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 68 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGM20N60 | IXYS | Description: IGBT 600V 40A TO-204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 2mJ (on), 3.2mJ (off) Test Condition: 480V, 20A, 82Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGM20N60A | IXYS | Description: IGBT 600V 40A TO-204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/600ns Switching Energy: 2mJ (on), 2mJ (off) Test Condition: 480V, 20A, 82Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGM25N100A | IXYS | TO-3 9352+ | auf Bestellung 70 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGM25N100A | IXYS | Description: IGBT 1000V 50A 200W TO204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/500ns Switching Energy: 5mJ (off) Test Condition: 800V, 25A, 33Ohm, 15V Gate Charge: 180 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGM40N60 | IXYS | Description: IGBT 600V 75A 250W TO-204AE Packaging: Tube Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-204AE Td (on/off) @ 25°C: 100ns/600ns Test Condition: 480V, 40A, 22Ohm, 15V Gate Charge: 250 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGM40N60A | IXYS | Description: IGBT MODULE 600V 75A 250W TO204 Package / Case: TO-204AA, TO-3 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A NTC Thermistor: No Supplier Device Package: TO-204 Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGM40N60AL | IXYS | Description: POWER MOSFET TO-3 Packaging: Tube Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN100N120 | IXYS | Description: IGBT MODULE 1200V 160A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN100N120 | IXYS | IGBTs G-series | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN100N160A | IXYS | IGBTs 100 Amps 1600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN100N160A | IXYS | Description: IGBT MODULE 1600V 200A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN100N170 | IXYS | IGBTs HIGH VOLT NPT IGBTS 1700V 95A | auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN100N170 | IXYS | IXGN100N170 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN100N170 | Littelfuse | Trans IGBT Module N-CH 1700V | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGN100N170 | IXYS | Description: IGBT MOD 1700V 160A 735W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 735 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.22 nF @ 25 V | auf Bestellung 248 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN100N170 | Littelfuse | Trans IGBT Module N-CH 1700V | auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGN100N170 | Littelfuse | Trans IGBT Module N-CH 1700V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN100N170 | Littelfuse | Trans IGBT Module N-CH 1700V | auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGN120N60A3 | IXYS | Description: IGBT MOD 600V 200A 595W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 595 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN120N60A3 | IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN120N60A3D1 | IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 120A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN120N60A3D1 | Littelfuse | Trans IGBT Module N-CH 600V 200A 595000mW | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN120N60A3D1 | IXYS | Description: IGBT MOD 600V 200A 595W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 595 W Current - Collector Cutoff (Max): 650 µA Input Capacitance (Cies) @ Vce: 14.8 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N170 | Littelfuse | IGBT Module, High Voltage IGBT | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGN200N170 | LITTELFUSE | Description: LITTELFUSE - IXGN200N170 - IGBT-Modul, Einfach, 280 A, 2.1 V, 1.25 kW, 150 °C, SOT-227B tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: - Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.1V Dauer-Kollektorstrom: 280A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 2.1V Verlustleistung Pd: 1.25kW euEccn: NLR Verlustleistung: 1.25kW Bauform - Transistor: SOT-227B Kollektor-Emitter-Spannung V(br)ceo: 1.7kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7kV IGBT-Konfiguration: Einfach productTraceability: Yes-Date/Lot Code DC-Kollektorstrom: 280A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGN200N170 | IXYS | Description: IGBT Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 133 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 37ns/320ns Switching Energy: 28mJ (on), 30mJ (off) Test Condition: 850V, 100A, 1Ohm, 15V Gate Charge: 540 nC Part Status: Active Current - Collector (Ic) (Max): 280 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 1050 A Power - Max: 1250 W | auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN200N170 | Littelfuse | IGBT Module, High Voltage IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N170 | IXYS | IXGN200N170 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N170 | IXYS | IGBTs SOT227 1700V 160A IGBT | auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN200N60 | IXYS | IGBT Transistors 200 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60 | IXYS | Description: IGBT MOD 600V 200A 600W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 600 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60A | IXYS | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGN200N60A | IXYS | Description: IGBT MOD 600V 200A 600W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 600 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60A | IXYS | MODULE | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN200N60A2 | IXYS | Description: IGBT MOD 600V 200A 700W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 700 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.9 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60B | IXYS | MODULE | auf Bestellung 268 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN200N60B | IXYS | TO220 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN200N60B | IXYS | Description: IGBT MOD 600V 200A 600W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 600 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGN200N60B3 | IXYS | IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A | auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN200N60B3 Produktcode: 176713 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGN200N60B3 | IXYS | Description: IGBT MOD 600V 300A 830W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 830 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V | auf Bestellung 702 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B | auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGN200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGN200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 300A 830000mW 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60B3 | IXYS | IXGN200N60B3 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN200N60B3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGN200N60B3 - IGBT-Modul, Einfach, 300 A, 1.35 V, 830 W, 150 °C, SOT-227B tariffCode: 85412900 Transistormontage: Platte rohsCompliant: Y-EX IGBT-Technologie: PT IGBT [Standard] Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.35V Dauer-Kollektorstrom: 300A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.35V Verlustleistung Pd: 830W euEccn: NLR Verlustleistung: 830W Bauform - Transistor: SOT-227B Kollektor-Emitter-Spannung V(br)ceo: 600V Anzahl der Pins: 4Pin(s) Produktpalette: IGBT Module GenX3 Kollektor-Emitter-Spannung, max.: 600V IGBT-Konfiguration: Einfach productTraceability: No Wandlerpolarität: n-Kanal DC-Kollektorstrom: 300A Betriebstemperatur, max.: 150°C SVHC: Lead (17-Jan-2023) | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGN200N60B3 | Littelfuse | Trans IGBT Chip N-CH 600V 300A 830W 4-Pin SOT-227B | auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGN20N90 Produktcode: 104856 | Transistoren > Transistoren IGBT, Leistungsmodule ZCODE: 8541290010 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGN320N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN320N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 320A 735000mW 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN320N60A3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B Technology: GenX3™; PT Collector current: 170A Power dissipation: 735W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Type of module: IGBT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN320N60A3 | LITTELFUSE | Description: LITTELFUSE - IXGN320N60A3 - TRANSISTOR, IGBT, 600V, 320A, SOT-227B tariffCode: 85412900 Transistormontage: Panel rohsCompliant: YES IGBT-Technologie: - hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.46V Dauer-Kollektorstrom: 320A usEccn: EAR99 IGBT-Anschluss: Tab Kollektor-Emitter-Sättigungsspannung Vce(on): 1.46V Verlustleistung Pd: 735W euEccn: NLR Verlustleistung: 735W Bauform - Transistor: SOT-227B Kollektor-Emitter-Spannung V(br)ceo: 600V Produktpalette: GenX3 Series Kollektor-Emitter-Spannung, max.: 600V IGBT-Konfiguration: Single productTraceability: Yes-Date/Lot Code DC-Kollektorstrom: 320A Betriebstemperatur, max.: 150°C directShipCharge: 25 SVHC: No SVHC (17-Dec-2014) | auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGN320N60A3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B Technology: GenX3™; PT Collector current: 170A Power dissipation: 735W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Type of module: IGBT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN320N60A3 | IXYS | IGBTs 320 Amps 600V | auf Bestellung 81 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN320N60A3 | Littelfuse | Trans IGBT Chip N-CH 600V 320A 735W 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN320N60A3 | IXYS | Description: IGBT MOD 600V 320A 735W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 735 W Current - Collector Cutoff (Max): 150 µA Input Capacitance (Cies) @ Vce: 18 nF @ 25 V | auf Bestellung 1665 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN400N30A3 | IXYS | IGBT Transistors 400 Amps 300V 1.15 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N30A3 | IXYS | Description: IGBT MOD 300V 400A 735W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.15V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 735 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N30A3 | Littelfuse | Trans IGBT Module N-CH 300V 400A 735000mW | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60A3 | IXYS | Description: IGBT MOD 600V 400A 830W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.25V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 830 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 32 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60A3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 190A Case: SOT227B Electrical mounting: screw Technology: GenX3™; PT Mechanical mounting: screw Gate-emitter voltage: ±20V Power dissipation: 830W Pulsed collector current: 800A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60A3 | Littelfuse | Trans IGBT Module N-CH 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60A3 | Littelfuse | Trans IGBT Module N-CH 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60A3 | IXYS | IGBTs 400 Amps 600V | auf Bestellung 301 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN400N60A3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 190A Case: SOT227B Electrical mounting: screw Technology: GenX3™; PT Mechanical mounting: screw Gate-emitter voltage: ±20V Power dissipation: 830W Pulsed collector current: 800A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60B3 | IXYS | IGBT Modules Mid-Frequency Range PT IGBTs | auf Bestellung 353 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN400N60B3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SOT227B Electrical mounting: screw Technology: GenX3™; PT Mechanical mounting: screw Gate-emitter voltage: ±20V Power dissipation: 1kW Pulsed collector current: 1.5kA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60B3 | IXYS | Description: IGBT MOD 600V 430A 1000W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 430 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1000 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 31 nF @ 25 V | auf Bestellung 266 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN400N60B3 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SOT227B Electrical mounting: screw Technology: GenX3™; PT Mechanical mounting: screw Gate-emitter voltage: ±20V Power dissipation: 1kW Pulsed collector current: 1.5kA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN400N60B3 | Littelfuse | Trans IGBT Module N-CH 600V 430A 1000000mW 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN40N60CD1 | IXYS | Description: IGBT MODULE 600V SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N120C3H1 | IXYS | IGBT Modules High Frequency Range >40khz CIGBT w/Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N120C3H1 | IXYS | IXGN50N120C3H1 IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N120C3H1 | Littelfuse | Trans IGBT Module N-CH 1200V 95A 460000mW 4-Pin SOT-227B | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N120C3H1 | IXYS | Description: IGBT MOD 1200V 95A 460W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 40A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 460 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N60B | IXYS | Description: IGBT MOD 600V 75A 300W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 300 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N60BD2 | IXYS | Description: IGBT MOD 600V 75A 250W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N60BD3 | IXYS | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGN50N60BD3 | IXYS | Description: IGBT MOD 600V 75A 250W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN50N60BD3 | ABB | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN50N60BD3 | IXYS | MODULE | auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN60N60 | IXYS | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| IXGN60N60 | IXYS | Description: IGBT MOD 600V 100A 250W SOT227B Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN60N60 Produktcode: 173038 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGN60N60 | ABB | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN60N60 | IXYS | IGBT Transistors ULTRA LOW VCE 600V 100A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN60N60C2 | IXYS | IGBT Transistors 60 Amps 600V 1.7 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN60N60C2 | IXYS | 60A/600V/IGBT/1U | auf Bestellung 58 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN60N60C2 | IXYS | Description: IGBT MOD 600V 75A 480W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 480 W Current - Collector Cutoff (Max): 650 µA Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN60N60C2D1 | IXYS | SOP8 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN60N60C2D1 | IXYS | Description: IGBT MOD 600V 75A 480W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 480 W Current - Collector Cutoff (Max): 650 µA Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN60N60C2D1 | IXYS | IGBT Transistors 60 Amps 600V 1.7 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN60N60C2D1 | IXYS | 60A/600V/IGBT/1U | auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGN60N60C2D1 Produktcode: 36189 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGN72N60A3 | IXYS | Description: IGBT MOD 600V 160A 360W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 360 W Current - Collector Cutoff (Max): 75 µA Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60A3 | IXYS | IGBT Transistors 72 Amps 600V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60A3 | Littelfuse | Trans IGBT Module N-CH 600V 160A 360000mW | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60C3H1 | IXYS | IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A | auf Bestellung 507 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN72N60C3H1 | Littelfuse | Trans IGBT Module N-CH 600V 78A 360000mW | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60C3H1 | Littelfuse | Trans IGBT Module N-CH 600V 78A 360000mW | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60C3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Technology: GenX3™; PT Collector current: 52A Power dissipation: 360W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Type of module: IGBT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60C3H1 | IXYS | Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 52A; SOT227B; 360W Technology: GenX3™; PT Collector current: 52A Power dissipation: 360W Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 360A Type of module: IGBT Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60C3H1 | Littelfuse | Trans IGBT Module N-CH 600V 78A 360000mW | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN72N60C3H1 | IXYS | Description: IGBT MOD 600V 78A 360W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 360 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.78 nF @ 25 V | auf Bestellung 299 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGN80N60A2 | IXYS | Description: IGBT MOD 600V 160A 625W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 625 W Current - Collector Cutoff (Max): 25 µA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN80N60A2D1 | IXYS | Description: IGBT MOD 600V 160A 625W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 625 W Current - Collector Cutoff (Max): 650 µA | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120B3H1 | IXYS | Description: IGBT MOD 1200V 145A 595W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 145 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 595 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120B3H1 | IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120B3H1 | Littelfuse | Trans IGBT Module N-CH 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120B3H1 | Littelfuse | Trans IGBT Module N-CH 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120C3H1 | IXYS | IGBT Transistors 130Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120C3H1 | Littelfuse | Trans IGBT Module N-CH | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120C3H1 | Littelfuse | Trans IGBT Module N-CH | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGN82N120C3H1 Produktcode: 179639 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGN82N120C3H1 | IXYS | Description: IGBT MOD 1200V 130A 595W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 82A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 595 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 7.9 nF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP10N60A | IXYS | Description: IGBT 600V 20A 100W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 10A Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N100 | IXYS | Description: IGBT 1000V 24A 100W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 100ns/850ns Switching Energy: 2.5mJ (off) Test Condition: 800V, 12A, 120Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N100 | IXYS | IGBT Transistors 24Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N100A | IXYS | IGBT Transistors 24Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N100A | IXYS | Description: IGBT 1000V 24A 100W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 100ns/850ns Switching Energy: 2.5mJ (off) Test Condition: 800V, 12A, 120Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N100AU1 | IXYS | IGBTs 24Amps 1000V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N100AU1 | IXYS | Description: IGBT 1000V 24A 100W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 100ns/850ns Switching Energy: 4mJ (off) Test Condition: 800V, 12A, 120Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N120A2 | IXYS | Description: IGBT 1200V 24A 75W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 15ns/680ns Switching Energy: 5.4mJ (off) Test Condition: 960V, 12A, 100Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 48 A Power - Max: 75 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO220-3 Mounting: THT Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 100W Case: TO220-3 Mounting: THT Gate charge: 20.4nC Kind of package: tube Collector-emitter voltage: 1.2kV Pulsed collector current: 60A Turn-on time: 202ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 12A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N120A3 | IXYS | Description: IGBT 1200V 22A 100W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-220-3 IGBT Type: PT Gate Charge: 20.4 nC Part Status: Active Current - Collector (Ic) (Max): 22 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 100 W | auf Bestellung 1168 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGP12N120A3 | IXYS | IGBTs GenX3 1200V IGBTs | auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGP12N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 22A 100000mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N60B | IXYS | Description: IGBT 600V 24A 100W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 20ns/150ns Switching Energy: 500µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N60C | IXYS | Description: IGBT 600V 24A 100W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP12N60CD1 | IXYS | Description: IGBT 600V 24A 100W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 20ns/60ns Switching Energy: 90µJ (off) Test Condition: 480V, 12A, 18Ohm, 15V Gate Charge: 32 nC Part Status: Obsolete Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 48 A Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP15N100C | IXYS | IGBT Transistors 30 Amps 1000V 3.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP15N100C | IXYS | Description: IGBT 1000V 30A 150W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 850µJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 73 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP15N120B | IXYS | Description: IGBT 1200V 30A 150W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 1.75mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP15N120B | IXYS | IGBTs 30 Amps 1200V 3.2 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP15N120C | IXYS | Description: IGBT 1200V 30A 200W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 1.05mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 86 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 200 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP16N60B2 | IXYS | Description: IGBT 600V 40A 150W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 18ns/73ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP16N60B2D1 Produktcode: 122366 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGP16N60B2D1 | IXYS | Description: IGBT 600V 40A 150W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 18ns/73ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 24 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP16N60B2D1 | IXYS | IGBTs 16 Amps 600V 2.3 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP16N60C2 | IXYS | Description: IGBT 600V 40A 150W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/75ns Switching Energy: 160µJ (on), 90µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP16N60C2 | IXYS | IGBT Transistors 16 Amps 600V 3.0 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP16N60C2D1 | IXYS | Description: IGBT 600V 40A 150W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/75ns Switching Energy: 160µJ (on), 90µJ (off) Test Condition: 400V, 12A, 22Ohm, 15V Gate Charge: 25 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP16N60C2D1 | IXYS | IGBT Transistors 16 Amps 600V 3.0 V Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N100 | IXYS | Description: IGBT 1000V 40A 150W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/350ns Switching Energy: 3.5mJ (off) Test Condition: 800V, 20A, 47Ohm, 15V Gate Charge: 73 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N100 | IXYS | IGBT Transistors 40 Amps 1000V 3 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 150000mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120 | IXYS | Description: IGBT 1200V 40A 150W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 28ns/400ns Switching Energy: 6.5mJ (off) Test Condition: 800V, 20A, 47Ohm, 15V Gate Charge: 63 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120 | IXYS | IGBT Transistors 40 Amps 1200V 2.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120 | Ixys Corporation | Trans IGBT Chip N-CH 1200V 40A 150W 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120A3 | IXYS | Description: IGBT 1200V 40A 180W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/290ns Switching Energy: 2.85mJ (on), 6.47mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W | auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGP20N120A3 | IXYS | IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | auf Bestellung 600 Stücke: Lieferzeit 430-434 Tag (e) |
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| IXGP20N120A3 | Littelfuse | Trans IGBT Chip N-CH 1200V 40A 180W 3-Pin(3+Tab) TO-220AB | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 50nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 120A Turn-on time: 66ns Turn-off time: 1.53µs | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGP20N120A3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 50nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 120A Turn-on time: 66ns Turn-off time: 1.53µs Anzahl je Verpackung: 1 Stücke | auf Bestellung 33 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGP20N120A3 | IXYS SEMICONDUCTOR | Description: IXYS SEMICONDUCTOR - IXGP20N120A3 - IGBT, 40 A, 2.5 V, 180 W, 1.2 kV, TO-220AB, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.5V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 180W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 40A SVHC: No SVHC (17-Jan-2023) | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| IXGP20N120B | IXYS | Description: IGBT 1200V 40A 190W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 2.1mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 51nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 61ns Turn-off time: 720ns | auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGP20N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 180W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 51nC Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 80A Turn-on time: 61ns Turn-off time: 720ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGP20N120B3 | IXYS | Description: IGBT 1200V 36A 180W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/150ns Switching Energy: 920µJ (on), 560µJ (off) Test Condition: 600V, 16A, 15Ohm, 15V Gate Charge: 51 nC Part Status: Active Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 180 W | auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGP20N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 36A 180000mW 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120B3 | IXYS | IGBTs G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N120BD1 | IXYS | Description: IGBT 1200V 40A 190W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 25ns/150ns Switching Energy: 2.1mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 72 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP20N60B | IXYS | Description: IGBT 600V 40A 150W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/150ns Switching Energy: 150µJ (on), 700µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP24N120C3 | IXYS | Description: IGBT 1200V 48A 250W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/93ns Switching Energy: 1.16mJ (on), 470µJ (off) Test Condition: 600V, 20A, 5Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP24N120C3 | Littelfuse | Trans IGBT Chip N-CH 1200V 48A 250000mW 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP24N120C3 | IXYS | IGBTs 24 Amps 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP24N120C3 | IXYS | IXGP24N120C3 THT IGBT transistors | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP24N60C | IXYS | Description: IGBT 600V 48A 150W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/75ns Switching Energy: 240µJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 150 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP24N60C4 | IXYS | Description: IGBT 600V 56A 190W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 21ns/143ns Switching Energy: 400µJ (on), 300µJ (off) Test Condition: 360V, 24A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Obsolete Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 130 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP24N60C4D1 | IXYS | Description: IGBT 600V 56A 190W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 22ns/192ns Switching Energy: 350µJ (on), 340µJ (off) Test Condition: 360V, 24A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Obsolete Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 130 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP28N120B | IXYS | Description: IGBT 1200V 50A 250W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 30ns/180ns Switching Energy: 2mJ (off) Test Condition: 960V, 28A, 5Ohm, 15V Gate Charge: 92 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP28N60A3 | IXYS | IGBT Transistors DISC IGBT PT-LOW FREQUENCY | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP28N60A3 | IXYS | Description: IGBT Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 18ns/300ns Switching Energy: 700µJ (on), 2.4mJ (off) Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 66 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 170 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP28N60A3M | IXYS | IGBT Transistors DISC IGBT PT-LOW FREQUENCY | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP28N60A3M | IXYS | Description: DISC IGBT PT-LOW FREQUENCY TO-22 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 26 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A Supplier Device Package: TO-220 Isolated Tab IGBT Type: PT Td (on/off) @ 25°C: 18ns/300ns Test Condition: 480V, 24A, 10Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 64 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP2N100 | IXYS | IGBTs 4 Amps 1000V 2.7 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP2N100 | IXYS | Description: IGBT 1000V 4A 25W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/300ns Switching Energy: 560µJ (off) Test Condition: 800V, 2A, 150Ohm, 15V Gate Charge: 7.8 nC Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 8 A Power - Max: 25 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP2N100A | IXYS | IGBTs 4 Amps 1000V 3.5 Rds | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP2N100A | IXYS | Description: IGBT 1000V 4A 25W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 15ns/300ns Switching Energy: 260µJ (off) Test Condition: 800V, 2A, 150Ohm, 15V Gate Charge: 7.8 nC Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 8 A Power - Max: 25 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP30N-43TC | IXYS | 09+ | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| IXGP30N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO220-3 Mounting: THT Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Turn-on time: 56ns Turn-off time: 471ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXGP30N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 60A 300W 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP30N120B3 | IXYS | IGBTs 30 Amps 1200V | auf Bestellung 300 Stücke: Lieferzeit 439-443 Tag (e) |
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| IXGP30N120B3 | IXYS | Description: IGBT PT 1200V 60A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 16ns/127ns Switching Energy: 3.47mJ (on), 2.16mJ (off) Test Condition: 960V, 30A, 5Ohm, 15V Gate Charge: 87 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 300 W | auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXGP30N120B3 | IXYS | Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 300W Case: TO220-3 Mounting: THT Gate charge: 87nC Kind of package: tube Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Turn-on time: 56ns Turn-off time: 471ns | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXGP30N120B3 | Littelfuse | Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP30N60B2 | IXYS | Description: IGBT 600V 70A 190W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 13ns/110ns Switching Energy: 320µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP30N60B4D1 | IXYS | Description: IGBT 600V 56A 190W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 24A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 440µJ (on), 700µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 77 nC Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 156 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP30N60C2 | IXYS | Description: IGBT 600V 70A 190W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 13ns/70ns Switching Energy: 190µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 190 W | Produkt ist nicht verfügbar | |||||||||||||||||
| IXGP30N60C2 Produktcode: 104966 | Transistoren > MOSFET N-CH ZCODE: 8541290010 | Produkt ist nicht verfügbar | ||||||||||||||||||
| IXGP30N60C3 | IXYS | IGBT Transistors 30 Amps 600V | auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| IXGP30N60C3 | Littelfuse | Trans IGBT Chip N-CH 600V 60A 220000mW 3-Pin(3+Tab) TO-220 | Produkt ist nicht verfügbar |