IXGP2N100 IXYS
Hersteller: IXYS
Description: IGBT 1000V 4A 25W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/300ns
Switching Energy: 560µJ (off)
Test Condition: 800V, 2A, 150Ohm, 15V
Gate Charge: 7.8 nC
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 25 W
Description: IGBT 1000V 4A 25W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 15ns/300ns
Switching Energy: 560µJ (off)
Test Condition: 800V, 2A, 150Ohm, 15V
Gate Charge: 7.8 nC
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 8 A
Power - Max: 25 W
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Technische Details IXGP2N100 IXYS
Description: IGBT 1000V 4A 25W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 15ns/300ns, Switching Energy: 560µJ (off), Test Condition: 800V, 2A, 150Ohm, 15V, Gate Charge: 7.8 nC, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 8 A, Power - Max: 25 W.
Weitere Produktangebote IXGP2N100
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
IXGP2N100 | Hersteller : IXYS | IGBTs 4 Amps 1000V 2.7 Rds |
Produkt ist nicht verfügbar |