Produkte > FQU
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||||
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| FQU10N20CTU | ON Semiconductor | Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU10N20CTU | ON Semiconductor | Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU10N20CTU | onsemi / Fairchild | MOSFETs N-CH/200V/10A/QFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU10N20CTU | ONSEMI | Description: ONSEMI - FQU10N20CTU - MOSFET'S - SINGLE SVHC: Lead (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU10N20CTU | onsemi | Description: MOSFET N-CH 200V 7.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V | auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU10N20CTU | ON Semiconductor | Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU10N20LTU | onsemi / Fairchild | MOSFETs 200V N-Ch QFET Logic Level | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU10N20LTU | ONSEMI | Description: ONSEMI - FQU10N20LTU - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1190 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU10N20LTU | onsemi | Description: MOSFET N-CH 200V 7.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU10N20TU | Fairchild Semiconductor | Description: MOSFET N-CH 200V 7.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | auf Bestellung 21774 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU10N20TU_AM002 | onsemi | Description: MOSFET N-CH 200V 7.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V Power Dissipation (Max): 2.5W (Ta), 51W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU11P06 | FAIRCHILD | 05+ | auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU11P06 | FAIRCHIL | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU11P06 | onsemi / Fairchild | MOSFETs QF -60V 185MOHM IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU11P06TU | ON Semiconductor | Trans MOSFET P-CH 60V 9.4A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU11P06TU | ON Semiconductor | Trans MOSFET P-CH 60V 9.4A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU11P06TU | onsemi | Description: MOSFET P-CH 60V 9.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU11P06TU | onsemi / Fairchild | MOSFETs 60V P-Channel QFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU11P06TU Produktcode: 38375 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||||
| FQU11P06TU | ON Semiconductor | Trans MOSFET P-CH 60V 9.4A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 4290 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU11P06TU | ON-Semicoductor | P-MOSFET 9.4A 60V 38W 0.185Ω FQU11P06TU TFQU11p06tu Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQU11P06TU. | ONSEMI | Description: ONSEMI - FQU11P06TU. - P CHANNEL MOSFET, -60V, 9.4A, IPAK tariffCode: 85412900 Transistormontage: Through Hole Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 9.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 38W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.185ohm directShipCharge: 25 SVHC: Lead | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU12N20TU | ON Semiconductor | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU12N20TU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 55W Case: IPAK Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.28Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU12N20TU | ON Semiconductor | Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU12N20TU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 55W Case: IPAK Mounting: THT Kind of package: tube Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 36A Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.28Ω | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU12N20TU | onsemi | Description: MOSFET N-CH 200V 9A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU12N20TU | ON Semiconductor / Fairchild | MOSFET 200V N-Channel QFET | auf Bestellung 1733 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU13N06 | FAIRCHILD | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU13N06LTU | ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU13N06LTU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 44A Power dissipation: 28W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06LTU | onsemi | Description: MOSFET N-CH 60V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06LTU | ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06LTU | onsemi / Fairchild | MOSFET 60V N-Channel QFET Logic Level | auf Bestellung 1779 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU13N06LTU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 44A Power dissipation: 28W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06LTU | ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU13N06LTU-WS | ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06LTU-WS | onsemi / Fairchild | MOSFET 60V N-Channel QFET | auf Bestellung 52965 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU13N06LTU-WS | ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 3320 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU13N06LTU-WS | ON Semiconductor | Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06LTU-WS | onsemi | Description: MOSFET N-CH 60V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V | auf Bestellung 23558 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU13N06TU | auf Bestellung 3929 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU13N06TU | ON Semiconductor | Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) IPAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06TU | onsemi | Description: MOSFET N-CH 60V 10A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N06TU | onsemi / Fairchild | MOSFET 60V N-Channel QFET Logic Level | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N10 | FSC | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU13N10L | FAIRCHILD | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU13N10LTU | onsemi | Description: MOSFET N-CH 100V 10A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N10LTU | ON Semiconductor | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 4690 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU13N10LTU | onsemi / Fairchild | MOSFET 100V N-Ch QFET Logic Level | auf Bestellung 1323 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU13N10LTU | ON Semiconductor | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 16114 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU13N10LTU | ON Semiconductor | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N10LTU | ON Semiconductor | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU13N10TU | onsemi | Description: MOSFET N-CH 100V 10A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU17P06 | onsemi / Fairchild | MOSFET QF -60V 135MOHM IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU17P06TU | Fairchild | Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail FQU17P06TU TFQU17p06tu Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQU17P06TU | onsemi | Description: MOSFET P-CH 60V 12A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | auf Bestellung 4762 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU17P06TU | ON Semiconductor / Fairchild | MOSFET -60V Single | auf Bestellung 4710 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU17P06TU | ONSEMI | Description: ONSEMI - FQU17P06TU - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.11 ohm, TO-251AA, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 79W Bauform - Transistor: TO-251AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: Lead (17-Jan-2022) | auf Bestellung 4797 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU17P06TU | Fairchild | Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Rail FQU17P06TU TFQU17p06tu Anzahl je Verpackung: 10 Stücke | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQU17P06TU | ON Semiconductor | Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 4160 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU17P06TU | ONSEMI | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: IPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced | auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU17P06TU | ONSEMI | Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: IPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQU17P06TU | ON Semiconductor | Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU17P06TU Produktcode: 126647 | ON | Transistoren > Transistoren P-Kanal-Feld Gehäuse: TO-251 Uds,V: 60 V Id,A: 7,6 A Rds(on),Om: 0,135 Ohm Ciss, pF/Qg, nC: 690/21 /: THT | auf Bestellung 3 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU18N20V2 | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU1N50BTU | auf Bestellung 9950 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU1N50TU | Fairchild Semiconductor | Description: MOSFET N-CH 500V 1.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 550mA, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | auf Bestellung 2056 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU1N60 | FAIRCHILD | 2002 TO-126 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU1N60C | onsemi / Fairchild | MOSFET QFC 600V 11.5OHM IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N60C | FAIRCHILD | auf Bestellung 158000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU1N60CTU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 6.2nC Pulsed drain current: 4A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 3646 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU1N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 5040 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU1N60CTU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 600mA; Idm: 4A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: IPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Gate charge: 6.2nC Pulsed drain current: 4A | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N60CTU | onsemi | Description: MOSFET N-CH 600V 1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N60CTU | onsemi / Fairchild | MOSFET 600V N-Channel Adv Q-FET C-Series | auf Bestellung 2463 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU1N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N60TU | Fairchild Semiconductor | Description: MOSFET N-CH 600V 1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | auf Bestellung 607 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU1N60TU | auf Bestellung 3628 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU1N80TU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 45W Gate charge: 7.2nC Pulsed drain current: 4A | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N80TU | onsemi / Fairchild | MOSFET 800V Single | auf Bestellung 5708 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU1N80TU | auf Bestellung 4758 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU1N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N80TU | onsemi | Description: MOSFET N-CH 800V 1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N80TU | ON Semiconductor | POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N80TU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 45W Gate charge: 7.2nC Pulsed drain current: 4A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU1P50TU | auf Bestellung 4865 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU20N06LTU | ONSEMI | Description: ONSEMI - FQU20N06LTU - Leistungs-MOSFET, n-Kanal, 60 V, 17.2 A, 0.046 ohm, TO-251 Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 17.2 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 38 Bauform - Transistor: TO-251 Anzahl der Pins: 3 Produktpalette: QFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.046 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.5 SVHC: Lead (17-Jan-2022) | auf Bestellung 2148 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU20N06LTU | onsemi | Description: MOSFET N-CH 60V 17.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU20N06LTU | ON Semiconductor | Trans MOSFET N-CH 60V 17.2A 3-Pin(3+Tab) IPAK Tube | auf Bestellung 16889 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQU20N06LTU | ON Semiconductor | Trans MOSFET N-CH 60V 17.2A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU20N06LTU | onsemi / Fairchild | MOSFET 60V N-Channel QFET Logic Level | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU20N06TU | auf Bestellung 3670 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU20N06TU | Fairchild Semiconductor | Description: MOSFET N-CH 60V 16.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V | auf Bestellung 17796 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N100TU | ON Semiconductor | Trans MOSFET N-CH 1KV 1.6A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N100TU | Fairchild | N-MOSFET 1.6A 1000V 50W 9Ω FQU2N100TU TFQU2n100tu Anzahl je Verpackung: 10 Stücke | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQU2N100TU | onsemi / Fairchild | MOSFET 1000V/1.6A/N-CH | auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N100TU | onsemi | Description: MOSFET N-CH 1000V 1.6A IPAK | auf Bestellung 1608 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N100TU | ONSEMI | FQU2N100TU THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N100TU | ONSEMI | Description: ONSEMI - FQU2N100TU - Leistungs-MOSFET, n-Kanal, 1 kV, 1.6 A, 7.1 ohm, TO-251 Drain-Source-Spannung Vds: 1 Dauer-Drainstrom Id: 1.6 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 50 Bauform - Transistor: TO-251 Anzahl der Pins: 3 Produktpalette: QFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 7.1 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: Lead (17-Jan-2022) | auf Bestellung 5040 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU2N100TU | ON Semiconductor | Trans MOSFET N-CH 1KV 1.6A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N40 | FAIRCHILD | TO-251 | auf Bestellung 1147 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU2N40TU | auf Bestellung 4970 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU2N50BTU | Fairchild Semiconductor | Description: MOSFET N-CH 500V 1.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V | auf Bestellung 45243 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N50BTU | ONSEMI | Description: ONSEMI - FQU2N50BTU - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 45243 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU2N50BTU-WS | ON Semiconductor | Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N50BTU-WS | onsemi | Description: MOSFET N-CH 500V 1.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N50BTU-WS | ON Semiconductor | Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N50BTU-WS | onsemi / Fairchild | MOSFET Power MOSFET | auf Bestellung 4732 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU2N50BTU_WS | Fairchild Semiconductor | Description: MOSFET N-CH 500V 1.6A IPAK | auf Bestellung 4969 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU2N60 | onsemi / Fairchild | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N60 | FAIRCHILD | 2002 TO-251 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU2N60B | auf Bestellung 70560 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU2N60C | FAIRCHILD | auf Bestellung 158000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU2N60C | onsemi / Fairchild | MOSFET QFC 600V 4.7OHM IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N60CTLTU | Fairchild Semiconductor | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N60CTU | onsemi | Description: MOSFET N-CH 600V 1.9A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N60CTU | Fairchild | Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail FQU2N60CTU TFQU2n60ctu Anzahl je Verpackung: 10 Stücke | auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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| FQU2N60CTU | onsemi / Fairchild | MOSFET 600V N-Channel Adv Q-FET C-Series | auf Bestellung 13010 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N60TU | Fairchild Semiconductor | Description: MOSFET N-CH 600V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V | auf Bestellung 10164 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N60TU | onsemi | Description: MOSFET N-CH 600V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N60TU | ONSEMI | Description: ONSEMI - FQU2N60TU - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 10164 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU2N80 | onsemi / Fairchild | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N80TU | Fairchild Semiconductor | Description: MOSFET N-CH 800V 1.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V | auf Bestellung 3037 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 1.8A 3-Pin(3+Tab) IPAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N80TU | onsemi / Fairchild | MOSFET 800V N-Channel QFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N80TU_NL | onsemi / Fairchild | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90 | FAIRCHILD | 2002 TO-251 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU2N90TU | ONSEMI | Description: ONSEMI - FQU2N90TU - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 97264 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU2N90TU | FSC | auf Bestellung 15120 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU2N90TU | Fairchild Semiconductor | Description: MOSFET N-CH 900V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | auf Bestellung 223140 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N90TU | Fairchild | auf Bestellung 15120 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU2N90TU-AM002 | onsemi / Fairchild | MOSFET 900V 1.6A 7.8Ohm N-Channel | auf Bestellung 4558 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N90TU-AM002 | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-AM002 | Fairchild Semiconductor | Description: MOSFET N-CH 900V 1.7A I-PAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | auf Bestellung 977 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N90TU-AM002 | ON Semiconductor | Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-AM002 | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-AM002 | ON Semiconductor | Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-AM002 | onsemi | Description: MOSFET N-CH 900V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-WS | ON Semiconductor | Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-WS | onsemi | Description: MOSFET N-CH 900V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | auf Bestellung 8187 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N90TU-WS | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-WS | onsemi | Description: MOSFET N-CH 900V 1.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU-WS | onsemi / Fairchild | MOSFET 900V 1.7A 7.2Ohm N-Channel | auf Bestellung 3943 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU2N90TU-WS | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: tube Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: THT Case: IPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU_AM002 | Fairchild Semiconductor | Description: MOSFET N-CH 900V 1.7A IPAK | auf Bestellung 1044 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU2N90TU_WS | ON Semiconductor | Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU2N90TU_WS | Fairchild Semiconductor | Description: MOSFET N-CH 900V 1.7A IPAK | auf Bestellung 5040 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU2P40TU | auf Bestellung 4820 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU30N06LTU | ON Semiconductor | Trans MOSFET N-CH 60V 24A Automotive 3-Pin(3+Tab) IPAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU30N06LTU | onsemi | Description: MOSFET N-CH 60V 24A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU30N06TU | auf Bestellung 5020 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU3N40 | FAIRCHILD | TO-251 | auf Bestellung 1546 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU3N40TU | auf Bestellung 4597 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU3N40TU | onsemi | Description: MOSFET N-CH 400V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N40TU | Fairchild Semiconductor | Description: MOSFET N-CH 400V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V | auf Bestellung 2887 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU3N50C Produktcode: 128758 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||||
| FQU3N50CTU | ON Semiconductor | Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N50CTU | onsemi / Fairchild | MOSFET 500V N-Channel Adv QFET C-series | auf Bestellung 15110 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU3N50CTU | ONSEMI | FQU3N50CTU THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N50CTU | Fairchild Semiconductor | Description: POWER FIELD-EFFECT TRANSISTOR, 2 | auf Bestellung 1320 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU3N50CTU | ON Semiconductor | Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N60CTU | onsemi | Description: MOSFET N-CH 600V 2.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N60CTU | onsemi | Description: MOSFET N-CH 600V 2.4A IPAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V | auf Bestellung 7915 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU3N60TU | onsemi | Description: MOSFET N-CH 600V 2.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N60TU | auf Bestellung 4313 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU3N60TU | ON Semiconductor | Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) IPAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3N60TU | Fairchild Semiconductor | Description: MOSFET N-CH 600V 2.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V | auf Bestellung 21754 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU3P20TU | Fairchild Semiconductor | Description: MOSFET P-CH 200V 2.4A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU3P50TU | onsemi | Description: MOSFET P-CH 500V 2.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N20LTU | onsemi / Fairchild | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N20TU | Fairchild Semiconductor | Description: MOSFET N-CH 200V 3A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N25TU | Fairchild Semiconductor | Description: MOSFET N-CH 250V 3A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 | auf Bestellung 3247 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU4N50TU | Fairchild Semiconductor | Description: MOSFET N-CH 500V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.3A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V | auf Bestellung 27877 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU4N50TU | auf Bestellung 4735 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU4N50TU-WS | ONSEMI | Description: ONSEMI - FQU4N50TU-WS - MOSFET'S - SINGLE SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N50TU-WS | ON Semiconductor | Trans MOSFET N-CH 500V 2.6A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N50TU-WS | onsemi | Description: MOSFET N-CH 500V 2.6A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N50TU-WS | ONSEMI | FQU4N50TU-WS THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N50TU-WS | onsemi / Fairchild | MOSFET N-CH/500V 2.6A/2.7OHM | auf Bestellung 3458 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU4N50TU-WS | onsemi | Description: MOSFET N-CH 500V 2.6A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4N50TU_WS | Fairchild Semiconductor | Description: MOSFET N-CH 500V 2.6A IPAK | auf Bestellung 5030 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU4P25TU | onsemi | Description: MOSFET P-CH 250V 3.1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU4P40 | FAIRCHILD | TO-251 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU5N20LTU | onsemi / Fairchild | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N40TU | Fairchild Semiconductor | Description: POWER FIELD-EFFECT TRANSISTOR, 3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V | auf Bestellung 36535 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU5N40TU | ONSEMI | FQU5N40TU THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N40TU | ONSEMI | Description: ONSEMI - FQU5N40TU - Leistungs-MOSFET, n-Kanal, 400 V, 3.4 A, 1.27 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 400V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: QFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.27ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4986 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU5N40TU | ON Semiconductor | Trans MOSFET N-CH 400V 3.4A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N40TU | auf Bestellung 2030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU5N40TU | onsemi / Fairchild | MOSFET 400V N-Channel QFET | auf Bestellung 4404 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU5N50CTU | ON Semiconductor | Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) IPAK Rail | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N50CTU | onsemi | Description: MOSFET N-CH 500V 4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N50CTU-WS | onsemi | Description: MOSFET N-CH 500V 4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N50CTU-WS | onsemi / Fairchild | MOSFET 500V,4.0A NCH MOSFET | auf Bestellung 4885 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU5N50CTU-WS | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N50CTU-WS | ON Semiconductor | N-Channel QFET® MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N50CTU-WS | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.4A; Idm: 16A; 48W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 48W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N50TU | Fairchild Semiconductor | Description: MOSFET N-CH 500V 3.5A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N60CTU | Fairchild Semiconductor | Description: POWER FIELD-EFFECT TRANSISTOR, 2 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | auf Bestellung 4040 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU5N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 2.8A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N60CTU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N60CTU | onsemi | Description: MOSFET N-CH 600V 2.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU5N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 2.8A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N60CTU | ONSEMI | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N60CTU | ON Semiconductor | Trans MOSFET N-CH 600V 2.8A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5N60CTU | onsemi / Fairchild | MOSFET N-CH/600V/5A/QFET | auf Bestellung 825 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU5P20TU | Fairchild | auf Bestellung 20690 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU5P20TU | ONSEMI | Description: ONSEMI - FQU5P20TU - Leistungs-MOSFET, p-Kanal, 200 V, 3.7 A, 1.1 ohm, TO-251 Drain-Source-Spannung Vds: 200 Dauer-Drainstrom Id: 3.7 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 45 Bauform - Transistor: TO-251 Anzahl der Pins: 3 Produktpalette: QFET Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 1.1 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: Lead (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5P20TU | onsemi / Fairchild | MOSFET 200V P-Channel QFET | auf Bestellung 4936 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU5P20TU | onsemi | Description: MOSFET P-CH 200V 3.7A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU5P20TU | ONSEMI | FQU5P20TU THT P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU6N25TU | Fairchild Semiconductor | Description: MOSFET N-CH 250V 4.4A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU6N25TU | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU6N40CTU | Fairchild Semiconductor | Description: MOSFET N-CH 400V 4.5A IPAK | auf Bestellung 14242 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU6N40CTU-NBEA001 | Fairchild | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU6N40CTU_NBEA001 | Fairchild Semiconductor | Description: MOSFET N-CH 400V 4.5A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU6N40TU | auf Bestellung 14820 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU6N50CTU | Fairchild Semiconductor | Description: MOSFET N-CH 500V 4.5A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU6P25TU | Fairchild Semiconductor | Description: MOSFET P-CH 250V 4.7A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU7N10LTU | onsemi | Description: MOSFET N-CH 100V 5.8A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.9A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU7N20LTU | onsemi / Fairchild | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU7N20TU | Fairchild Semiconductor | Description: MOSFET N-CH 200V 5.3A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 2.65A, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V | auf Bestellung 9024 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU7P06TU | ON Semiconductor | Description: MOSFET P-CH 60V 5.4A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU7P06TU | Rochester Electronics, LLC | Description: P-CHANNEL POWER MOSFET | auf Bestellung 38115 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU7P06TU-NB82048 | Fairchild | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
| FQU7P06TU_NB82048 | ON Semiconductor | Description: MOSFET P-CH 60V 5.4A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU7P20 | FAIRCHILD | TO-251 | auf Bestellung 398 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| FQU7P20TU | Fairchild Semiconductor | Description: MOSFET P-CH 200V 5.7A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU7P20TU_AM002 | Fairchild Semiconductor | Description: MOSFET P-CH 200V 5.7A IPAK | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU8N25 Produktcode: 60926 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||||
| FQU8N25TU | Fairchild Semiconductor | Description: MOSFET N-CH 250V 6.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V | auf Bestellung 5629 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU8N25TU | onsemi | Description: MOSFET N-CH 250V 6.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU8P10 | auf Bestellung 4970 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
| FQU8P10TU | onsemi | Description: MOSFET P-CH 100V 6.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V | auf Bestellung 9173 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU8P10TU | onsemi / Fairchild | MOSFET -100V Single | auf Bestellung 7243 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU8P10TU | ONSEMI | Description: ONSEMI - FQU8P10TU - Leistungs-MOSFET, p-Kanal, 100 V, 6.6 A, 0.41 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 6.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 44W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: QFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.41ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
| FQU9N25TU | ON Semiconductor | Trans MOSFET N-CH 250V 7.4A 3-Pin(3+Tab) IPAK Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU9N25TU | Fairchild Semiconductor | Description: POWER FIELD-EFFECT TRANSISTOR, 7 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V | auf Bestellung 8414 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQU9N25TU | ON Semiconductor / Fairchild | MOSFET 250V N-Channel QFET | auf Bestellung 3843 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
| FQU9N25TU | onsemi | Description: MOSFET N-CH 250V 7.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQU9N25TU | ONSEMI | FQU9N25TU THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQUNX04 | Panduit Corp | Description: COPPER CABLE | Produkt ist nicht verfügbar | |||||||||||||||||||
| FQUNX08 | Panduit Corp | Description: FIBER OPTIC CABLE OUTSIDE | Produkt ist nicht verfügbar |