auf Bestellung 5708 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.60 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.03 EUR |
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Technische Details FQU1N80TU onsemi / Fairchild
Description: MOSFET N-CH 800V 1A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V.
Weitere Produktangebote FQU1N80TU
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FQU1N80TU |
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auf Bestellung 4758 Stücke: Lieferzeit 21-28 Tag (e) |
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FQU1N80TU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| FQU1N80TU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 1A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| FQU1N80TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 45W Gate charge: 7.2nC Pulsed drain current: 4A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQU1N80TU | Hersteller : onsemi |
Description: MOSFET N-CH 800V 1A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQU1N80TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Case: IPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Power dissipation: 45W Gate charge: 7.2nC Pulsed drain current: 4A |
Produkt ist nicht verfügbar |