Produkte > BSS
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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BSS 131 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS 79C | Infineon Technologies | Trans GP BJT NPN 40V 0.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS 98 | Infineon Technologies | Trans MOSFET N-CH 50V 0.3A 3-Pin TO-92 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-C-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-F-D-A | SAMTEC | Description: SAMTEC - BSS-025-01-F-D-A - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 50 Kontakt(e), Oberflächenmontage Kontaktüberzug: Vergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 50 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 50POS SMD GOLD Features: Board Guide Packaging: Tray Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 50 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | auf Bestellung 176 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-F-D-A-TR | Samtec Inc. | Description: .635MM DOUBLE ROW SOCKET ASSEMBL | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-F-D-A-TR | SAMTEC | Description: SAMTEC - BSS-025-01-F-D-A-TR - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 50 Kontakt(e), Oberflächenmontage Kontaktüberzug: Hauchvergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 50 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 93 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS-025-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 50POS SMD GOLD Packaging: Tray Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 50 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-L-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 348 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-L-D-A-TR | Samtec Inc. | Description: .635MM DOUBLE ROW SOCKET ASSEMBL | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-050-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-F-D-A-TR | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD Packaging: Tray Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 100 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | auf Bestellung 349 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-050-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 326 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-050-01-L-D-A | Samtec | Conn Micro Socket SKT 100 POS 0.635mm Solder ST SMD Tray | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A-TR | Samtec | Conn Micro Socket SKT 100 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A-TR | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 150POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A | Samtec | Conn Micro Socket SKT 150 POS 0.635mm Solder ST SMD Tray | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec | Conn Micro Socket SKT 150 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec | Conn Micro Socket SKT 150 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec Inc. | Description: CONN SOCKET 150POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 150 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-084-01-F-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 168POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 168 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 3.00µin (0.076µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-084-01-H-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 168POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 168 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 30.0µin (0.76µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-084-01-L-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 168POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 168 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-C-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 50.0µin (1.27µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-C-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 50.0µin (1.27µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | SAMTEC | Description: SAMTEC - BSS-100-01-F-D-A - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 200 Kontakt(e), Oberflächenmontage Kontaktüberzug: Vergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 200 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 200POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 3.00µin (0.076µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-LC | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-LC | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Lock Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 200POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 30.0µin (0.76µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-100-01-L-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | SAMTEC | Description: SAMTEC - BSS-100-01-L-D-A - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 200 Kontakt(e), Oberflächenmontage Kontaktüberzug: Vergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 200 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 200POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-EM2 | Samtec Inc. | Description: CONN SOCKET 200POS EDGE MNT GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-EM2-TR | Samtec Inc. | Description: CONN SOCKET 200POS EDGE MNT GOLD Packaging: Tape & Reel (TR) Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-LC | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Lock Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-LC-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Features: Board Lock Packaging: Tape & Reel (TR) Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-C-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 50.0µin (1.27µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A-TR | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-150-01-C-D-A | Samtec Inc. | Description: CONN SOCKET 300POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-150-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 300POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-150-01-F-D-EM2 | Samtec Inc. | Description: CONN SOCKET 300POS EDGE MNT GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-23 | ABB | Scheuerschutzmuffe,NW23,sw | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-4 | Essentra | Essentra | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-5 | Essentra | Essentra | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-7 | Essentra | Essentra | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-8 | Essentra | Other Tools | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-L100-001 | Isabellenhuette USA | Description: RESISTOR - BUS BAR SHUNT WITH NT Packaging: Tray Power (Watts): 20W Tolerance: ±5% Temperature Coefficient: ±50ppm/°C Mounting Type: Shunt Fixture, 60mm Pitch Type: Current Sensor Operating Temperature: -40°C ~ 125°C Applications: Automotive AEC-Q200 Resistance: 100 µOhms | auf Bestellung 58 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS010A | Essentra Components | Description: PUSH FIT BUMPER: COMPATIBLE HOLE Packaging: Bag Color: Natural Size / Dimension: 0.500" Dia (12.70mm) Mounting Type: Push In Material: Nylon Shape: Cylindrical, Tapered Type: Bumper | auf Bestellung 12496 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS010A | Essentra | Bumpers / Feet FLAT HEAD SPLIT STEM BUMPER:NYL NATURAL | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS015A | Essentra Components | Description: PUSH FIT BUMPER: COMPATIBLE HOLE Packaging: Bag Color: Natural Size / Dimension: 0.750" Dia (19.05mm) Mounting Type: Push In Material: Nylon Shape: Cylindrical, Tapered Type: Bumper | auf Bestellung 10490 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS015A | Essentra | Bumpers / Feet FLAT HEAD SPLIT STEM BUMPER:NYL NATURAL | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS05-12 | VARCO | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS10 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS100 | HBE | Fuse: fast-acting; glass type; WTA; current: 100mA; voltage: 250V; dimensions: 5x20mm; equivalents: 0217.100MXP; 179020.0,1; 0034.1506 Fuse: fast-acting; 100mA Bss100 Anzahl je Verpackung: 100 Stücke | auf Bestellung 1900 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS100 | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS100 | onsemi | Description: MOSFET N-CH 100V 220MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS100 | onsemi / Fairchild | MOSFET DISC BY MFG 2/02 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS101 | INFINEON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS11 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS110 | INFINEON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS110 | onsemi | Description: MOSFET P-CH 50V 170MA TO92-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS110 | onsemi / Fairchild | MOSFET DISC BY MFG 2/02 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 | infineon | sot-23 09+ | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS119 | infineon | 03/04+ SOT23 | auf Bestellung 7900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS119 E6327 | INFINEON | sSh/23 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS119 E6433 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E6433 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7796 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7796 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7978 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7978 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 H6327 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6327 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6433 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6433 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L7796 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L7978 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119E6327 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: PG-SOT23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6327XT | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6433 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V | auf Bestellung 86725 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119N H6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119N H6327 | Infineon | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS119N H6327 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 43837 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119N H7796 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON | Description: INFINEON - BSS119NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.406 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.9V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.406ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 27384 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: 100V Drain current: 0.19A On-state resistance: 10Ω | auf Bestellung 7249 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27046 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: 100V Drain current: 0.19A On-state resistance: 10Ω Anzahl je Verpackung: 1 Stücke | auf Bestellung 7249 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS119NH6327XTSA1 | STMicroelectronics | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 35299 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON | Description: INFINEON - BSS119NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.406 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.9V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.406ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 27384 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 95656 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon | N-MOSFET 100V 0.19A 6Ω BSS119NH6327XTSA1 BSS119NH6327 Infineon TBSS119n Anzahl je Verpackung: 250 Stücke | auf Bestellung 2540 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS119NH6327XTSA1 | onsemi | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 Produktcode: 118883 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS119NH6433XTMA1 | Infineon Technologies | MOSFET OptiMOS Sm-Signal 100V 6Ohm 190mA | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS119NH6433XTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH7796 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 18803 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH7978XTSA1 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS12 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | UMW | Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 UMW TBSS123 UMW Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5.5Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | Nexperia | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 204000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 7231 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | ONSEMI | Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 662009 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | auf Bestellung 5851 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 JSMICRO TBSS123 JSM Anzahl je Verpackung: 500 Stücke | auf Bestellung 1700 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | Infineon Technologies | MOSFETs N-Channel Small Signal MOSFETs (20 V to 800 V) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 25 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 204000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | SLKOR | Transistor N-Channel MOSFET; 100V; 20V; 6Ohm; 150mA; 250mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 SLKOR TBSS123 SLK Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | auf Bestellung 5851 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 204000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | ONSEMI | Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 662009 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5.5Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | Fairchild | N-MOSFET 100V 170mA 6Ω 360mW BSS123 Fairchild TBSS123 FAI Anzahl je Verpackung: 250 Stücke | auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | ROHM Semiconductor | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 7231 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | HT Jinyu Semiconductor | N-Channel Enhancement Mode MOSFET | auf Bestellung 234000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | ONSEMI | Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 93000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | SHIKUES | Transistor N-Channel MOSFET; 100V; 100V; 20V; 10Ohm; 170mA; 300mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 SHIKUES TBSS123 SHK Anzahl je Verpackung: 500 Stücke | auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | Fairchild/ON Semiconductor | N-канальний ПТ; Udss, В = 100; Id = 170 мА; Ptot, Вт = 0,36; Тип монт. = smd; Ciss, пФ @ Uds, В = 73 @ 25; Qg, нКл = 2,5 @ 10 В; Rds = 6 Ом @ 170 мА, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2 В @ 1000 мкА; SOT-23-3 | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | onsemi / Fairchild | MOSFETs SOT-23 N-CH LOGIC | auf Bestellung 329562 Stücke: Lieferzeit 94-98 Tag (e) |
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BSS123 | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 25 V | auf Bestellung 12373 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123 E6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 E6433 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 E6433 | Infineon Technologies | Array | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 H6327 | Infineon Technologies | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6327 | Infineon Technologies | GaN FETs N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6433 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6433 | Infineon Technologies | GaN FETs N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L7874 | Infineon Technologies | MOSFETs N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123,215 | NEXPERIA | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 1206000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia USA Inc. | Description: MOSFET N-CH 100V 150MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | auf Bestellung 264000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 4734 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NXP Semiconductors | N-кан. MOSFET SOT-23 | auf Bestellung 2589 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 1206000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NXP | Transistor N-Channel MOSFET; 100V; 100V; 20V; 6Ohm; 150mA; 250mW; -55°C ~ 150°C; Replacement: BSS123,215; BSS123.215; BSS123 NXP TBSS123 NXP Anzahl je Verpackung: 3000 Stücke | auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | NEXPERIA | Description: NEXPERIA - BSS123,215 - Leistungs-MOSFET, n-Kanal, 100 V, 150 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 125937 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 29711 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NEXPERIA | Description: NEXPERIA - BSS123,215 - Leistungs-MOSFET, n-Kanal, 100 V, 150 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 125937 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Power dissipation: 0.25W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | auf Bestellung 31481 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | NEXPERIA | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 29711 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia USA Inc. | Description: MOSFET N-CH 100V 150MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | auf Bestellung 268914 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 1206000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NXP | Transistor N-Channel MOSFET; 100V; 100V; 20V; 6Ohm; 150mA; 250mW; -55°C ~ 150°C; Replacement: BSS123,215; BSS123.215; BSS123 NXP TBSS123 NXP Anzahl je Verpackung: 3000 Stücke | auf Bestellung 33000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | Nexperia | MOSFETs BSS123/SOT23/TO-236AB | auf Bestellung 78661 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Power dissipation: 0.25W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | auf Bestellung 31481 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NXP | Transistor N-Channel MOSFET; 100V; 100V; 20V; 6Ohm; 150mA; 250mW; -55°C ~ 150°C; Replacement: BSS123,215; BSS123.215; BSS123 NXP TBSS123 NXP Anzahl je Verpackung: 3000 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | NEXPERIA | Description: NEXPERIA - BSS123,215 - Leistungs-MOSFET, n-Kanal, 100 V, 150 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 516000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 4734 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-13-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-13-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-13P | Micro Commercial Co | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-13P | Micro Commercial Components (MCC) | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7 | Diodes Incorporated | MOSFETs 100V 360mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 8531000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123-7-F | DIODES INC. | Description: DIODES INC. - BSS123-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 330179 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 426000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1467 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-7-F Produktcode: 148378 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1467 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-7-F | Diodes INC. | N-канальний ПТ; Udss, В = 100; Id = 170 мА; Ptot, Вт = 0,3; Тип монт. = smd; Ciss, пФ @ Uds, В = 60 @ 25; Rds = 6 Ом @ 170 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2 В @ 1000 мкА; SOT-23-3 | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Incorporated | MOSFETs 100V 360mW | auf Bestellung 293875 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 426000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 8531385 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | DIODES INC. | Description: DIODES INC. - BSS123-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 330179 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 9306000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F .K23 | DIODES/ZETEX | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R BSS123-13-F BSS123-7-F DIODES TBSS123-7-F Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123-7-F .K23 | DIODES/ZETEX | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R BSS123-13-F BSS123-7-F DIODES TBSS123-7-F Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123-7-F-50 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F-50 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-E6327 Produktcode: 98887 | Siemens | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 100 Idd,A: 0.17 Rds(on), Ohm: 6 Ciss, pF/Qg, nC: 55/1.78 JHGF: SMD | verfügbar 3617 Stück: 2995 Stück - stock Köln622 Stück - lieferbar in 3-4 Wochen |
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BSS123-F169 | onsemi | onsemi N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6O | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-F169 | onsemi | Description: MOSFET N-CH SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 0.2A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 0.2A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | onsemi | Description: FET 100V 6.0 MOHM SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | onsemi | Description: FET 100V 6.0 MOHM SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | ON Semiconductor | FET 100V 6.0 MOHM SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | onsemi | MOSFET FET 100V 6.0 MOHM | auf Bestellung 11044 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-ML | MOSLEADER | Description: 0.35W 100V 0.17A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-R1-00001 | Panjit | MOSFETs SOT23 100V .17A N-CH | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-R2-00001 | Panjit | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 13853 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-TP | Micro Commercial Components (MCC) | MOSFETs N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W | auf Bestellung 8123 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123.215 Produktcode: 49331 | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 100 Idd,A: 0.15 Rds(on), Ohm: 6 JHGF: SMD | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123/LF1R | Nexperia USA Inc. | Description: MOSFET N-CH 100V 150MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-236AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123A | ZETEX | 06+; | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS123ATA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123ATA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123ATA | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123ATC | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123E6327 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123E6327 | auf Bestellung 294000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS123E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123E6327 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123IXTMA1 | Infineon Technologies | Description: 100V N-CH SMALL SIGNAL MOSFET IN Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | auf Bestellung 5975 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | INFINEON | Description: INFINEON - BSS123IXTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 2.4ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1005 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V | auf Bestellung 17341 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123IXTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Pulsed drain current: 0.77A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.63nC Kind of channel: enhanced | auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Pulsed drain current: 0.77A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.63nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | MOSFETs Y | auf Bestellung 25855 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123IXTSA1 | INFINEON | Description: INFINEON - BSS123IXTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1005 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123K-13 | Diodes Incorporated | MOSFETs BSS Family SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-13 | Diodes Incorporated | Description: BSS FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 230MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 50 V | auf Bestellung 168000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 168000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123K-7 | Diodes Incorporated | MOSFETs BSS Family SOT23 T&R 3K | auf Bestellung 2965 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 15748 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.28A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123K-TP | Micro Commercial Components (MCC) | MOSFETs N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W | auf Bestellung 20269 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123KHE3-TP | Micro Commercial Components (MCC) | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123KHE3-TP | Micro Commercial Co | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 780mW (Tj) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123KHE3-TP | Micro Commercial Components | BSS123KHE3-TP | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L | ONSEMI | Description: ONSEMI - BSS123L - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 2.98 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.405V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.98ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 81489 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 23055 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | auf Bestellung 6005 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123L | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | auf Bestellung 6005 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123L | ONSEMI | Description: ONSEMI - BSS123L - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 2.98 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.405V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.98ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 81489 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 23055 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ONSEMI | Description: ONSEMI - BSS123L - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1508 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123L | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 25 V | auf Bestellung 108994 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ONSEMI | Description: ONSEMI - BSS123L - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 2.98 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.405V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.98ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123L | onsemi / Fairchild | MOSFETs Power MOSFET 170 mA, 100 V, N-Channel SOT-23 | auf Bestellung 750890 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 25 V | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6327XT | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433HTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433XT | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L7874XT | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LG | onsemi | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT1 | onsemi | Description: MOSFET N-CH 100V 170MA SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT1 | ON | SOT23 | auf Bestellung 437 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS123LT1 | ON | auf Bestellung 3260 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123LT1 | onsemi | MOSFETs 100V 170mA N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT1G | ON-Semicoductor | N-MOSFET 170mA 100V 360mW 6Ω BSS123, BSS123L6327, BSS123LT1G, BSS123-7-F BSS123 smd TBSS123 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 12420 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | n-канальний польовий транзистор SOT-23-3 | auf Bestellung 100 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||||
BSS123LT1G | ONSEMI | Description: ONSEMI - BSS123LT1G - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10VDC Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 192065 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 711000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G Produktcode: 42430 | ON | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 100 Idd,A: 0.17 Ciss, pF/Qg, nC: 20/ JHGF: SMD | verfügbar 2413 Stück: 115 Stück - stock Köln2298 Stück - lieferbar in 3-4 Wochen |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2448 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 15474 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 247281 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ON-Semicoductor | N-MOSFET 170mA 100V 360mW 6Ω BSS123, BSS123L6327, BSS123LT1G, BSS123-7-F BSS123 smd TBSS123 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 9000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ONSEMI | Description: ONSEMI - BSS123LT1G - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: 0 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: 0 Rds(on)-Prüfspannung: 10VDC Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | onsemi | MOSFETs 100V 170mA N-Channel | auf Bestellung 438500 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 711000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | ON Semiconductor | N-канальний ПТ; Udss, В = 100; Id = 0,2; Ptot, Вт = 0,2; Тип монт. = smd; Ciss, пФ @ Uds, В = 20 @ 25; Rds = 6 Ом @ 100 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,8 В @ 1000 мкА; SOT-23-3 | auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 247355 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2448 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 15474 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ONS | Транз. Пол. ММ N-MOSFET SOT23 Udss=100V; Id=0,15A; Pdmax=0,25W; Rds=6 Ohm | auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 711000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ONSEMI | Description: ONSEMI - BSS123LT1G - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10VDC Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 192065 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT3 | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT3G | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT3G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT7G | onsemi | Description: MOSFET N-CH 100V 15UA SOT23 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT7G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT7G | onsemi | MOSFET NFET SOT23 100V 170MA 6.0 | auf Bestellung 24496 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS123LT7G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123N H6327 | Infineon | auf Bestellung 546000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123N H6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123N H6327 | Infineon Technologies | MOSFETs N-Ch 100V 190mA SOT-23-3 | auf Bestellung 758402 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123N H6433 | Infineon Technologies | MOSFETs N-Ch 100V 190mA SOT-23-3 | auf Bestellung 34875 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327 | Infineon technologies | auf Bestellung 3003 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123NH6327XT | Infineon Technologies | MOSFETs N-Ch 100V 190mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 162000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON | Description: INFINEON - BSS123NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 168970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Pulsed drain current: 0.77A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.6nC Kind of channel: enhanced | auf Bestellung 33221 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | MOSFET N-CH 100V 0.19A SOT-23, SMD | auf Bestellung 252 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 44388 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | MOSFETs N-Ch 100V 190mA SOT-23-3 | auf Bestellung 731696 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 164644 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON | Description: INFINEON - BSS123NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 168970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 Produktcode: 198093 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Pulsed drain current: 0.77A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 33221 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 39850 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | Infineon | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123NH6433XTMA1 | Infineon Technologies | MOSFETs N-Ch 100V 190mA SOT-23-3 | auf Bestellung 6396 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 | auf Bestellung 1393999 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6433XTMA1 Produktcode: 190235 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 1390000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 220000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON | Description: INFINEON - BSS123NH6433XTMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 26609 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 1390000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Pulsed drain current: 0.77A Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Gate charge: 0.6nC Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 7125 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123NH6433XTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 227616 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON | Description: INFINEON - BSS123NH6433XTMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 26609 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Mounting: SMD Polarisation: unipolar Case: SOT23 Pulsed drain current: 0.77A Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Gate charge: 0.6nC Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V | auf Bestellung 7125 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-13 | Diodes Incorporated | Description: BSS FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-13 | DIODES INC. | Description: DIODES INC. - BSS123Q-13 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123Q-13 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-13 | Diodes Incorporated | Description: BSS FAMILY SOT23 T&R 10K Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 26119 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-13 | DIODES INC. | Description: DIODES INC. - BSS123Q-13 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123Q-13 | Diodes Incorporated | MOSFETs BSS Family SOT23 T&R 10K | auf Bestellung 54926 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-13 | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-7 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 3K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-7 | Diodes Incorporated | MOSFETs 2N7002 Family SOT23 T&R 3K | auf Bestellung 5915 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-7 | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123Q-7 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-7 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 10 Stücke | auf Bestellung 1770 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123Q-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 3K Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123T-HF | Comchip Technology | Description: MOSFET N-CH 100V 0.19A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 5.6Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123T-HF | Comchip Technology | 100 V, N Channel MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123T-HF | Comchip Technology | MOSFETs 100V 0.19A SOT-23 | auf Bestellung 5773 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123TA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 234000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | DIODES INC. | Description: DIODES INC. - BSS123TA - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2452 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1445 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123TA | Diodes Incorporated | MOSFETs N-Chnl 100V | auf Bestellung 75545 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123TA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 236810 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 228000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1445 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | DIODES INC. | Description: DIODES INC. - BSS123TA - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2552 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TC | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.2W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W | ONSEMI | Description: ONSEMI - BSS123W - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.39 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.39ohm | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | onsemi / Fairchild | MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 12819 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 12819 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | YY | 100V 200mA 3?@10V,200mA 150mW 1.8V@250uA 7pF@50V; N Channel; 32pF@50V;; -55C~+150C; SOT-323 MOSFETs BSS123W TBSS123W YY Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.2W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | onsemi | Description: MOSFET N-CH 100V 170MA SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ONSEMI | Description: ONSEMI - BSS123W - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.39 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.39ohm | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | Taiwan Semiconductor | Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 5.5Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | Taiwan Semiconductor | MOSFET 100V, 0.16A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 12804 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | onsemi | Description: MOSFET N-CH 100V 170MA SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 5.5Ω Mounting: SMD Gate charge: 2.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W RFG | Taiwan Semiconductor | MOSFETs 100V, 0.16A, Single N-Channel Power MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 146-150 Tag (e) |
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BSS123W RFG | Taiwan Semiconductor | Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W RFG | Taiwan Semiconductor | Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W RFG | Taiwan Semiconductor Corporation | Description: 100V, 0.16A, SINGLE N-CHANNEL PO Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 160mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 50 V | auf Bestellung 1636 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W RFG | Taiwan Semiconductor Corporation | Description: 100V, 0.16A, SINGLE N-CHANNEL PO Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 160mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7 | Diodes Incorporated | MOSFET 100V 200mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W-7-F | DIODES INC. | Description: DIODES INC. - BSS123W-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 1248000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W-7-F | DIODES/ZETEX | N-MOSFET 100V 170mA 6Ω 200mW BSS123W-7-F Diodes TBSS123w Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W-7-F | Diodes Incorporated | MOSFETs 100V 200mW | auf Bestellung 43481 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2135 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | DIODES INC. | Description: DIODES INC. - BSS123W-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 200mW Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 6ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2135 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 810000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 1251273 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W-TP | Micro Commercial Components (MCC) | MOSFETs N-Channel Mosfets | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 1167 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-323 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 225000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 1167 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | DIODES INC. | Description: DIODES INC. - BSS123WQ-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 200mW Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 6ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4625 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123WQ-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123WQ-7-F | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA | auf Bestellung 152959 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123WQ-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123WQ-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 225411 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123WQ-7-F | DIODES INC. | Description: DIODES INC. - BSS123WQ-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4625 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123_D87Z | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123_Q | onsemi / Fairchild | MOSFETs SOT-23 N-CH LOGIC | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 8370 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 8370 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123_R1_00001 | Panjit International Inc. | Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V | auf Bestellung 29705 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123_R1_00001 | Panjit | MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected | auf Bestellung 8344 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123_R1_00001 | Panjit International Inc. | Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123_R2_00001 | Panjit | MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS124 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS125 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS125 Produktcode: 51591 | Transistoren > MOSFET N-CH Gehäuse: TO-92 Uds,V: 600 Idd,A: 01.01.2000 Rds(on), Ohm: 45 JHGF: THT | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS125 | CSE | Fuse: fast-acting; glass type; WTA; current: 125mA; voltage: 250V; dimensions: 5x20mm; equivalents: 0217.125MXP; 179020.0,125; 0034.1507 Fuse: fast-acting; 125mA Bss125 Anzahl je Verpackung: 100 Stücke | auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126 E6327 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 E6906 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 E6906 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 H6327 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 5330 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126 H6327 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 26000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126 H6327 | Infineon | N-MOSFET 600V 0.021A 500Ω 500mW BSS126H6327XTSA2 BSS126H6327 Infineon TBSS126 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126 H6906 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 H6906 | Infineon Technologies | MOSFETs N-Ch 600V 21mA SOT-23-3 | auf Bestellung 8789 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126 L6327 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 L6906 | Infineon Technologies | MOSFET SIPMOS Sm-Signal TRANSISTOR 600V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 Transistor Produktcode: 61604 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS126H Produktcode: 113030 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS126H6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126H6327XTSA2 | INFINEON | Description: INFINEON - BSS126H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 21179 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 111687 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Technology: SIPMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 700Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: depleted Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 0.021A Anzahl je Verpackung: 1 Stücke | auf Bestellung 2540 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 6094 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 19610 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | INFINEON | Description: INFINEON - BSS126H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 21179 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Technology: SIPMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 700Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: depleted Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 0.021A | auf Bestellung 2540 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | MOSFETs N-Ch 600V 21mA SOT-23-3 | auf Bestellung 41278 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | INFINEON | Description: INFINEON - BSS126H6906XTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 39773 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 6818 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 43413 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | INFINEON | Description: INFINEON - BSS126H6906XTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 39773 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 900000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 43413 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | INFINEON | Description: INFINEON - BSS126IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: SIPMOS productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 280ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 2834 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126IXTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 3950 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | MOSFETs Y | auf Bestellung 9373 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | INFINEON | Description: INFINEON - BSS126IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: SIPMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 2834 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126L6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126L6906HTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-13 | Diodes Incorporated | Description: DIODE GP SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 8µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 30.9 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V 650V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-7 | Diodes Incorporated | Description: DIODE GP SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 8µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 30.9 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V 650V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 | Rectron USA | Description: MOSFET N-CHANNEL 600V 21MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 | Infineon Technologies | MOSFET N-Channel Small Signal MOSFETs (20 V to 800 V) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 Produktcode: 40606 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS127 | N/A | SOT-23 05+ | auf Bestellung 208500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS127 E6327 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 H6327 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 16970 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127 H6327 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 25951 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127 L6327 | Infineon Technologies | MOSFET N-Ch 600V 210mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127E6327 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127H6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127H6327XTSA2 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 17625 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | INFINEON | Description: INFINEON - BSS127H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 13865 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Technology: SIPMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 500Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 0.021A Anzahl je Verpackung: 1 Stücke | auf Bestellung 4804 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | INFINEON | Description: INFINEON - BSS127H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 13865 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Technology: SIPMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W On-state resistance: 500Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 0.021A | auf Bestellung 4804 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 58096 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | Infineon | N-MOSFET 600V 21mA 500Ω 500mW BSS127H6327XTSA2 BSS127H6327 Infineon TBSS127 Anzahl je Verpackung: 100 Stücke | auf Bestellung 5935 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127IXTSA1 | INFINEON | Description: INFINEON - BSS127IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 8405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127IXTSA1 | Infineon Technologies | MOSFETs Y | auf Bestellung 15542 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V SOT-23 T/RRDS(on)max.@ V GS=10V: 500 Ohm | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127IXTSA1 | INFINEON | Description: INFINEON - BSS127IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 310ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 8405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 6456 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127L6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 273000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127S-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 600V 160Ohm 70mA | auf Bestellung 37716 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.61W On-state resistance: 160Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 70mA | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.61W On-state resistance: 160Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 70mA Anzahl je Verpackung: 1 Stücke | auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127S-7 | DIODES INC. | Description: DIODES INC. - BSS127S-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 610mW Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 80ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm | auf Bestellung 10465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 278857 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Inc | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | DIODES INC. | Description: DIODES INC. - BSS127S-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm | auf Bestellung 10465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127S-7-50 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7-50 | Diodes Zetex | N-Channel Enhancement Mode Field MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | auf Bestellung 3156 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127SSN-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40mA Pulsed drain current: 0.16A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±20V On-state resistance: 190Ω Mounting: SMD Gate charge: 1.08nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | DIODES INC. | Description: DIODES INC. - BSS127SSN-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SC-59, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3430 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | auf Bestellung 3156 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127SSN-7 | Diodes Inc | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 57765 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | DIODES INC. | Description: DIODES INC. - BSS127SSN-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SC-59, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3430 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127SSN-7 | Diodes Incorporated | MOSFET BSS Family,SC59 Family,SC59,3K | auf Bestellung 12027 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127SSN-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40mA Pulsed drain current: 0.16A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±20V On-state resistance: 190Ω Mounting: SMD Gate charge: 1.08nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS129 | Vishay | Trans MOSFET N-CH Si 230V 0.15A 3-Pin TO-92 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS129 | SIEMENS | SMD | auf Bestellung 101000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS129 | PHI | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS13 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS131 | YFW | Transistor N-Channel MOSFET; 240V; +/-20V; 14Ohm; 100mA; 360mW; -55°C~150°C; Substitute: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 H6327; BSS131 TBSS131 c Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 | SLKOR | Transistor N-Channel MOSFET; 240V; 20V; 20Ohm; 110mA; 360mW; -55°C ~ 150°C; Equivalent: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 SLKOR TBSS131 SLK Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 | HXY MOSFET | Transistor N-Channel MOSFET; 240V; +/-20V; 14Ohm; 100mA; 360mW; -55°C~150°C; Substitute: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 H6327; BSS131 TBSS131 c Anzahl je Verpackung: 100 Stücke | auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 250V; 20V; 4,5Ohm; 100mA; 1,5W; -55°C ~ 150°C; Equivalent: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 JSMICRO TBSS131 JSM Anzahl je Verpackung: 100 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 (SOT-23) Produktcode: 33823 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS131 E6327 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131 H6327 | Infineon Technologies | MOSFET N-Ch 240V 100mA SOT-23-3 | auf Bestellung 29632 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131 H6327 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 26600 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131 L6327 | Infineon Technologies | MOSFET N-Ch 240V 110mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131 L6327 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131E6327 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131E6327 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131H6327 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131H6327 | Infineon Technologies | BSS131 МОП-транзистор N-Channel 240V 100mA 360mW SOT23 | auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327 Produktcode: 122768 | Infineon | Transistoren > MOSFET N-CH Uds,V: 240 V Idd,A: 0,11 A Rds(on), Ohm: 14 Ohm Ciss, pF/Qg, nC: 58/2,1 JHGF: SMD | auf Bestellung 465 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS131H6327XT | Infineon Technologies | MOSFET N-Ch 240V 100mA SOT-23-3 | auf Bestellung 19220 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Technology: SIPMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.36W On-state resistance: 14Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 240V Drain current: 0.1A | auf Bestellung 7817 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon | N-MOSFET 110mA 240V 360mW 14Ω BSS131 TBSS131 Anzahl je Verpackung: 100 Stücke | auf Bestellung 345 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | SHENZHEN YANGXING TECHNOLOGY CO., LTD. | BSS131H6327XTSA1 | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 7973 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | auf Bestellung 27344 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | INFINEON | Description: INFINEON - BSS131H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 240 V, 110 mA, 7.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 240V rohsCompliant: YES Dauer-Drainstrom Id: 110mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 360mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 68448 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131H6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Technology: SIPMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.36W On-state resistance: 14Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 240V Drain current: 0.1A Anzahl je Verpackung: 1 Stücke | auf Bestellung 7817 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 35649 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon | N-MOSFET 110mA 240V 360mW 14Ω BSS131 TBSS131 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | MOSFET N-Ch 240V 100mA SOT-23-3 | auf Bestellung 175735 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | auf Bestellung 654000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327XTSA1 | INFINEON | Description: INFINEON - BSS131H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 240 V, 110 mA, 7.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 240V rohsCompliant: YES Dauer-Drainstrom Id: 110mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 360mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 68448 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 7973 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131L6327XT | INFINEON | 09+ MSOP8 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS131L6327XT | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS134N | INFINEON | SOT-23 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS135 | auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS135 Produktcode: 77919 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | On Semiconductor/Fairchild | SOT-223, N-channe MOSFET, Udss=50V, Id=220mA, -55...+150 | auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1281000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | HT Jinyu Semiconductor | N-Channel Enhancement Mode Field Effect Transistor | auf Bestellung 711000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 157820 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 13611 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | UMW | Transistor N-Channel MOSFET; 50V; 50V; 20V; 3,5Ohm; 300mA; 300mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 UMW TBSS1 Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 2622 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 26386 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 360mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 JSMICRO TBSS138 Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 13611 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | AnBon | N-Channel 50V 220mA 1.6V @ 1mA 3.5? @ 220mA,10V 225mW SOT-23(SOT-23-3) MOSFET BSS138 TBSS138 ANB Anzahl je Verpackung: 100 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 294000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 Produktcode: 144172 | YJ | Transistoren > MOSFET N-CH Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/- JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 26386 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ONSEMI | Description: ONSEMI - BSS138 - Leistungs-MOSFET, n-Kanal, 50 V, 220 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 220mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 501940 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | EVVO | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 2372 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | Yangjie Electronic Technology | Trans MOSFET N-CH 50V 0.34A 3-Pin SOT-23 | auf Bestellung 933000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | HT Jinyu Semiconductor | N-Channel Enhancement Mode Field Effect Transistor | auf Bestellung 711000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | Good-Ark Electronics | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | LGE | Transistor N-MOSFET; 50V; 10V; 3,5Ohm; 220mA; 350mW; -55°C~150°C; BSS138 SOT23 LGE TBSS138 LGE Anzahl je Verpackung: 500 Stücke | auf Bestellung 670 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | onsemi / Fairchild | MOSFETs SOT-23 N-CH LOGIC | auf Bestellung 757965 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON-Semicoductor | N-MOSFET 50V 220mA 3.5Ω 360mW BSS138 Fairchild TBSS138 FAI Anzahl je Verpackung: 100 Stücke | auf Bestellung 340 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1746000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | Microdiode Electronics | BSS138 | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | Microdiode Electronics | BSS138 | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 157000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1680000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | UMW | Transistor N-Channel MOSFET; 50V; 50V; 20V; 3,5Ohm; 300mA; 300mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 UMW TBSS1 Anzahl je Verpackung: 500 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 11100 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 2622 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | HXY MOSFET | Transistor N-Channel MOSFET; 50V; 20V; 2Ohm; 220mA; 350mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 HXY MOSFET TBSS1 Anzahl je Verpackung: 500 Stücke | auf Bestellung 1300 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | YY | Transistor N-Channel MOSFET; 50V; 220mA; 360mW; 6 Ohm; -55°C ~ 150°C; Substitute: BSS138-TP; BSS138-13-F; BSS138LT1G-MS MSKSEMI; BSS138-7-F; BSS138TA; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138-FAI; BSS138P,215; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS1 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1146000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 9466 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ONSEMI | Description: ONSEMI - BSS138 - Leistungs-MOSFET, n-Kanal, 50 V, 220 mA, 0.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 220mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 579000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | EVVO | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | Good-Ark | Good-Ark Semiconductor BSS138. Single configuration 50 V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | Microdiode Electronics | BSS138 | auf Bestellung 1125000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 2392 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1193422 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | JUXING | Transistor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 350mW; -50°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 JUXING TBSS138 J Anzahl je Verpackung: 500 Stücke | auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1191000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | AnBon | N-Channel 50V 220mA 1.6V @ 1mA 3.5? @ 220mA,10V 225mW SOT-23(SOT-23-3) MOSFET BSS138 TBSS138 ANB Anzahl je Verpackung: 100 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 Produktcode: 197212 | UMW | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/ JHGF: SMD | auf Bestellung 7828 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ONSEMI | Description: ONSEMI - BSS138 - Leistungs-MOSFET, n-Kanal, 50 V, 220 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 220mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 501940 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | SLKOR | Transistor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 225mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 SLKOR TBSS138 SL Anzahl je Verpackung: 500 Stücke | auf Bestellung 5970 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | Taiwan Semiconductor | MOSFETs 50V, 0.26A, Single N-Channel Small-signal MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | GALAXY | Transistor N-Channel MOSFET; 50V; 50V; 20V; 3,5Ohm; 200mA; 300mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 GALAXY TB Anzahl je Verpackung: 500 Stücke | auf Bestellung 2600 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 Produktcode: 26318 | CET | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 Idd,A: 0.22 Rds(on), Ohm: 03.05.2015 Ciss, pF/Qg, nC: 42/- JHGF: SMD | erwartet 300 Stück: |
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BSS138 (CJ, SOT-23) Produktcode: 186257 | CJ | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 27/ JHGF: SMD | auf Bestellung 7978 Stück: Lieferzeit 21-28 Tag (e)erwartet 500 Stück: | |||||||||||||||||||
BSS138 (Diodes, SOT-23) Produktcode: 125280 | Diodes | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/- JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 (ON, SOT-23) Produktcode: 161156 | ON | Transistoren > MOSFET N-CH Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/- JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 RFG | Taiwan Semiconductor | MOSFETs 50V, 0.26A, Single N-Channel Power MOSFET | auf Bestellung 15998 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 RFG | Taiwan Semiconductor Corporation | Description: 50V, 0.26A, SINGLE N-CHANNEL POW Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 54934 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 RFG | Taiwan Semiconductor Corporation | Description: 50V, 0.26A, SINGLE N-CHANNEL POW Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 RFG | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 RFG | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 SOT23 | LGE | Transistor N-MOSFET; 50V; 10V; 3,5Ohm; 220mA; 350mW; -55°C~150°C; BSS138 SOT23 LGE TBSS138 LGE Anzahl je Verpackung: 500 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138(G9-49) | NS | 2000 | auf Bestellung 2520 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS138(SS) | FAIRCHILD | 00+ SOT-23 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 6810000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 550000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7290000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | DIODES INC. | Description: DIODES INC. - BSS138-13-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 9405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 650000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Incorporated | Description: MOSFET N-CH 50V SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 6980000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7550000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8060000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8820000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 280000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7210000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7490000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7940000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 260000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 6970000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 640000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7290000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | DIODES INC. | Description: DIODES INC. - BSS138-13-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 9405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 650000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7630000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8060000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8210000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Inc | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 290000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7290000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 640000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7450000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8040000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Incorporated | MOSFETs BSS Family | auf Bestellung 754439 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 260000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 6990000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7290000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 680000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7630000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13P | Micro Commercial Components | BSS138-13P | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-13P | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-13P | Micro Commercial Components | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-13P | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Incorporated | MOSFET 60V 360mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | DIODES INC. | Description: DIODES INC. - BSS138-7-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 496990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 5982316 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 114000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Incorporated | N-кан. MOSFET 50V, 0.2A, 0.225Вт, 3.5Ом, SOT-23 (SMD) | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 2775000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1467000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 756000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | MULTICOMP PRO | Description: MULTICOMP PRO - BSS138-7-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V Dauer-Drainstrom Id: 200mA hazardous: false Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro Field Effect Transistors N-Channel productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 2532000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 87000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1503000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Inc | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 2457000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | DIODES INC. | Description: DIODES INC. - BSS138-7-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 496990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 5670000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 5979000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1638000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Incorporated | MOSFETs 300mW 50V DSS | auf Bestellung 360414 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-7-F | Multicomp | BSS138-7-F | auf Bestellung 378000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 525000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | MULTICOMP PRO | Description: MULTICOMP PRO - BSS138-7-F - MOSFET, N CHANNEL, 50V, 1.4OHM, 200mA, SOT-23-3, FULL REEL tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 0 Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro Field Effect Transistors N-Channel productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 393000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 3522000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 741000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 114000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Inc | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 2457000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 380 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | MULTICOMP PRO | Description: MULTICOMP PRO - BSS138-7-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V Dauer-Drainstrom Id: 200mA hazardous: false Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro Field Effect Transistors N-Channel productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 3042000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 474000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1245000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 756000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F .K38 | DIODES/ZETEX | N-MOSFET 50V 200mA 3.5mΩ 300mW BSS138-7-F Diodes TBSS138 DIO Anzahl je Verpackung: 500 Stücke | auf Bestellung 2135 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-7-F-50 | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-50 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-50 | Diodes Inc | BSS Family SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-52 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-52 | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-79 | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F. | MULTICOMP PRO | Description: MULTICOMP PRO - BSS138-7-F. - MOSFET, N CHANNEL, 50V, 1.4OHM, 200mA, SOT-23-3 tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro MOSFET N Channel Transistors productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm directShipCharge: 25 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3274 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-AU-R2-000A1 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-D87Z | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-E6327 | auf Bestellung 828 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS138-F085 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F085 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F085 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F085 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F085 | ON Semiconductor / Fairchild | MOSFET SINGLE NCH LOG LEVEL FIELD EFFECT XTOR | auf Bestellung 5297 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS138-F169 | onsemi | Description: 50V N-CHANNEL LOGIC LEVEL ENHANC | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 50V 0.34A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 50V 0.34A SOT-23-3L | auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-F2-0000HF | Yangzhou Yangjie Electronic Technology Co., Ltd. | BSS138 SOT-23, N-channe MOSFET, Udss=50V, Id=340mA, -55...+150 | auf Bestellung 822 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | onsemi | MOSFETs FET 50V 3.5 OHM | auf Bestellung 1268248 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | onsemi | Description: FET 50V 3.5 OHM SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | ON Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | Comchip Technology | N-Channel MOSFET | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | Comchip Technology | MOSFET 50V 0.22A SOT-23 | auf Bestellung 1409 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | onsemi | Description: FET 50V 3.5 OHM SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-HF | Comchip Technology | MOSFETs MOSFET N-CH 50V 0.22A SOT-23 | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-HF | Comchip Technology | Description: MOSFET N-CH 50V 0.22A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-ML | MOSLEADER | Description: 0.35W 50V 0.22A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-NL | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS138-R1-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-R2-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-SB9G001 | ON Semiconductor | BSS 138 SOT23 FSC | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-T | onsemi | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Bulk Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: EFCP1313-4CC-037 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3753000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 142349 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 549000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 693000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 142349 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 BSS138-TP SOT23-3 MCC TBSS138-TP Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 489000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 522000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components (MCC) | MOSFETs N-Ch Enh FET 50Vds 0.22A 20Vgs 0.35W | auf Bestellung 40057 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 693000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Co | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 29530 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 BSS138-TP SOT23-3 MCC TBSS138-TP Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 450000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3753000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | MCC Corp. | BSS138-TP SOT-23, N-channe MOSFET | auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 735000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 570000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 225000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP Produktcode: 189195 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS138-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 BSS138-TP SOT23-3 MCC TBSS138-TP Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3651000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 597000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3753000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 546000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Co | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 29530 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 477000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138/SS | auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS138; 0,22A; 50V; 0,32W; N-MOSFET; Корпус: SOT-23; MCC | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||||
BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138A-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke | auf Bestellung 1483 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 22.8 pF @ 25 V | auf Bestellung 1192 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP | Micro Commercial Components Corp. | Transistor N-Channel MOSFET; 50V; 20V; 1,6Ohm; 220mA; 350mW; -55°C~150°C; BSS138A-TP TBSS138A-TP Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138A-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 1483 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138A-TP | Micro Commercial Components (MCC) | MOSFETs N-Ch Enh FET 50Vds 0.22A 20Vgs 0.35W | auf Bestellung 13668 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138A-TP-HF | Micro Commercial Components | N-Channel Enhancement Mode Field Effect Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP-HF | Micro Commercial Components (MCC) | MOSFET N-Channel Mosfets | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AHE3-TP | Micro Commercial Components (MCC) | MOSFETs 50Vds 20Vgs N-Ch FET | auf Bestellung 5880 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 620mW (Tj) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | auf Bestellung 5212 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AHE3-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 620mW (Tj) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5832 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | auf Bestellung 5212 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AK-QR | NEXPERIA | Description: NEXPERIA - BSS138AK-QR - Leistungs-MOSFET, n-Kanal, 60 V, 250 mA, 3 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 250mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.6W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 3ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2935 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138AK-QR | NEXPERIA | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.21 nC @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | Nexperia | Trans MOSFET N-CH 60V 0.25A Automotive 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | Nexperia | MOSFETs MOSFET-LOW VOLT SOT23/TO-236AB | auf Bestellung 7811 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AK-QR | NEXPERIA | Description: NEXPERIA - BSS138AK-QR - Leistungs-MOSFET, n-Kanal, 60 V, 250 mA, 3 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Produktpalette: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2935 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138AK-QR | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.21 nC @ 10 V Qualification: AEC-Q101 | auf Bestellung 2690 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AK-QR | Nexperia | Trans MOSFET N-CH 60V 0.25A 3-Pin SOT-23 Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKA/LF1R | Nexperia USA Inc. | Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250A Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKAR | Nexperia USA Inc. | Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia | MOSFETs BSS138AKA/SOT23/TO-236AB | auf Bestellung 424509 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | NEXPERIA | Description: NEXPERIA - BSS138AKAR - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 2.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85423990 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.7ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138AKAR | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.125A Power dissipation: 0.36W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Gate charge: 0.51nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 6030 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138AKAR | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.125A Power dissipation: 0.36W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Gate charge: 0.51nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 6030 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia USA Inc. | Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 17810 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | NEXPERIA | Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138AKDW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22800pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDW-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TP | Micro Commercial Components (MCC) | MOSFETs Dual NPN SIGNAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22800pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 10216 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDW-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TPQ2 | Micro Commercial Components (MCC) | MOSFETs Dual NPN SIGNAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TPQ2 | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V FET Feature: Standard Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDWHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDWHE3-TP | Micro Commercial Components (MCC) | MOSFET Dual 50Vds 20Vgs N-Ch FET | auf Bestellung 5850 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDWHE3-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Tj) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDWHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDWHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDWHE3-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Tj) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4400 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDWHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R Automotive AEC-Q101 | auf Bestellung 63000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKS-QX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKS-QX | Nexperia | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKS-QX | NEXPERIA | Description: NEXPERIA - BSS138AKS-QX - Dual-MOSFET, Zweifach n-Kanal, 60 V, 220 mA, 3 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 220mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 3ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 1.3W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138AKS-QX | NEXPERIA | N-channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKS-QX | Nexperia | MOSFETs MOSFET-LOW VOLT SOT363/SC-88 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKS-QX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Cut Tape (CT) | auf Bestellung 2835 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKS-QX | Nexperia | Trans MOSFET N-CH 60V 0.22A Automotive AEC-Q101 | Produkt ist nicht verfügbar |