Produkte > AOW

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AOW-4542P-B-RPUI AudioMicrophones -42DB 1.5VDC .5MA 2.2 KOHM
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.01 EUR
10+3.27 EUR
25+3.01 EUR
50+2.76 EUR
100+2.59 EUR
260+2.45 EUR
520+2.29 EUR
AOW-4542P-B-RPUI Audio, Inc.Description: MIC COND ANLG OMNI -42DB 0.382"D
Packaging: Bulk
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -42dB ±3dB
Shape: Circular
Type: Electret Condenser
S/N Ratio: 60dB
Termination: PC Pins
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.185" (4.70mm)
Part Status: Active
Voltage - Rated: 1.5 V
Impedance: 2.2 kOhms
Current - Supply: 500 µA
Voltage Range: 1.5 V ~ 10 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.10 EUR
10+3.34 EUR
25+3.08 EUR
Mindestbestellmenge: 5
AOW-4544L-C3310-B-RPUI AudioMicrophones -44DB 2VDC .5MA 2.2KOHM
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.03 EUR
10+3.36 EUR
25+3.10 EUR
50+2.90 EUR
100+2.73 EUR
520+2.34 EUR
1040+2.27 EUR
AOW-4544L-C3310-B-RPUI Audio, Inc.Description: MIC COND ANLG OMNI -44DB 0.382"D
Packaging: Bulk
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -44dB ±3dB
Shape: Circular
Type: Electret Condenser
S/N Ratio: 60dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.185" (4.70mm)
Part Status: Active
Voltage - Rated: 2 V
Impedance: 2.2 kOhms
Current - Supply: 500 µA
Voltage Range: 2 V ~ 10 V
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.29 EUR
10+3.57 EUR
25+3.29 EUR
50+3.10 EUR
100+2.91 EUR
Mindestbestellmenge: 5
AOW-4544P-C3310-B-RPUI AUDIODescription: PUI AUDIO - AOW-4544P-C3310-B-R - Mikrofon, ungerichtet, 50Hz bis 16kHz, 2V DC bis 10V DC, 2.2 kOhm, -44dB, 500µA
tariffCode: 85181000
Empfindlichkeit (dB): -44dB
rohsCompliant: YES
Wandlerfunktion: Mikrofon
Drain-Strom, max.: 500µA
hazardous: false
rohsPhthalatesCompliant: YES
Frequenzgang, min.: 50Hz
usEccn: EAR99
Richtcharakteristik: Omnidirektional
Versorgungsspannung, min.: 2VDC
Ausgangsimpedanz: 2.2kohm
euEccn: NLR
Frequenzgang, max.: 16kHz
Produktpalette: -
productTraceability: No
Versorgungsspannung, max.: 10VDC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
AOW-4544P-C3310-B-RPUI AudioMicrophones -44DB 2VDC .5MA 2.2KOHM
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.03 EUR
10+2.92 EUR
100+2.73 EUR
520+2.34 EUR
AOW-4544P-C3310-B-RPUI Audio, Inc.Description: MIC COND ANLG OMNI -44DB 0.382"D
Packaging: Bulk
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -44dB ±3dB
Shape: Circular
Type: Electret Condenser
S/N Ratio: 60dB
Termination: PC Pins
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.185" (4.70mm)
Voltage - Rated: 2 V
Impedance: 2.2 kOhms
Current - Supply: 500 µA
Voltage Range: 2 V ~ 10 V
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.94 EUR
65+2.85 EUR
130+2.67 EUR
Mindestbestellmenge: 5
AOW-5024P-HD-F-RPUI AudioMicrophones MICROPHONE -24DB 3VDC
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.86 EUR
10+5.68 EUR
25+5.24 EUR
50+4.93 EUR
100+4.61 EUR
500+3.98 EUR
1000+3.96 EUR
AOW-6540L-RPUI Audio, Inc.Description: MICROPHONE -40 DB 1.5VDC 2KOHM .
Packaging: Box
Output Type: Analog
Size / Dimension: 0.382" Dia (9.70mm)
Sensitivity: -40dB ±3dB @ 94dB SPL
Shape: Round
S/N Ratio: 65dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Top
Height (Max): 0.264" (6.70mm)
Voltage - Rated: 1.5 V
Impedance: 2 kOhms
Current - Supply: 300 µA
Voltage Range: 1.5 V ~ 10 V
Frequency Range: 50 Hz ~ 16 kHz
Produkt ist nicht verfügbar
AOW101-BGRIDECDescription: TW FLUSH PB
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
AOW101-BGRIDECPushbutton Switches TW FLUSH PB
Produkt ist nicht verfügbar
AOW10N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
AOW10N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW10N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
Produkt ist nicht verfügbar
AOW10N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW10T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
Produkt ist nicht verfügbar
AOW10T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Produkt ist nicht verfügbar
AOW10T60PAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW110-BGRIDECDescription: TW FLUSH PB
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+80.41 EUR
AOW110-BGRIDECDescription: IDEC - AOW110-BGR - PB SWITCH, SPST, 10A, 110V, PANEL
Schalteranschlüsse: Screw
Betätiger-/Kappenfarbe: Black, Green, Red
Plattenausschnitt (H x B): -
Schalterfunktion: Maintained
IP-Schutzart: IP65
AC-Kontaktstrom, max.: 10
DC-Kontaktstrom, max.: 10
Kontaktspannung V DC: 24
Farbe der Beleuchtung: Non Illuminated
Durchmesser des Frontplattenausschnitts: 22.3
Schaltermontage: Panel Mount
Produktpalette: TW Series
Druckknopf-Betätiger: Round
Kontaktkonfiguration: SPST-NO
Kontaktspannung V AC: 110
SVHC: No SVHC (16-Jul-2019)
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AOW110-BGRIDECPushbutton Switches TW FLUSH PB
Produkt ist nicht verfügbar
AOW11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhanced
Gate charge: 30.6nC
auf Bestellung 697 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
88+0.82 EUR
102+0.71 EUR
107+0.67 EUR
500+0.64 EUR
Mindestbestellmenge: 76
AOW11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Kind of channel: enhanced
Gate charge: 30.6nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 697 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
88+0.82 EUR
102+0.71 EUR
107+0.67 EUR
500+0.64 EUR
Mindestbestellmenge: 76
AOW11N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW11N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
50+1.72 EUR
100+1.56 EUR
500+1.27 EUR
Mindestbestellmenge: 6
AOW11S60ALPHA & OMEGA SEMICONDUCTORAOW11S60 THT N channel transistors
Produkt ist nicht verfügbar
AOW11S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW11S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Produkt ist nicht verfügbar
AOW11S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 11A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
Produkt ist nicht verfügbar
AOW120-BGRIDECPushbutton Switches TW FLUSH PB
Produkt ist nicht verfügbar
AOW120-BGRIDECDescription: TW FLUSH PB
Packaging: Bulk
Produkt ist nicht verfügbar
AOW125A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 312.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
auf Bestellung 7987 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.80 EUR
50+3.81 EUR
100+3.27 EUR
500+3.20 EUR
Mindestbestellmenge: 4
AOW125A60Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOW12N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW12N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Produkt ist nicht verfügbar
AOW12N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
AOW12N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW12N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW12N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
AOW14N50ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 42.8nC
Kind of channel: enhanced
auf Bestellung 205 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
87+0.82 EUR
93+0.77 EUR
Mindestbestellmenge: 81
AOW14N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW14N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 14A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
Produkt ist nicht verfügbar
AOW14N50ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 42.8nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
87+0.82 EUR
93+0.77 EUR
Mindestbestellmenge: 81
AOW14N50_001Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
Produkt ist nicht verfügbar
AOW15S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW15S60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 15.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 806 Stücke:
Lieferzeit 7-14 Tag (e)
51+1.42 EUR
57+1.27 EUR
59+1.22 EUR
Mindestbestellmenge: 51
AOW15S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
Produkt ist nicht verfügbar
AOW15S60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 15.6nC
Kind of channel: enhanced
auf Bestellung 806 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
57+1.27 EUR
59+1.22 EUR
Mindestbestellmenge: 51
AOW15S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW15S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 15A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
Produkt ist nicht verfügbar
AOW190A60CAlpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOW190A60CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
AOW20C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262
Produkt ist nicht verfügbar
AOW20S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW20S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Produkt ist nicht verfügbar
AOW214EDIP8
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
AOW214E
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
AOW222-YIDECDescription: 22MM PUSHBUTTON YELLOW
Packaging: Bulk
Produkt ist nicht verfügbar
AOW222-YIDECPushbutton Switches 22mm Pushbutton Yellow
Produkt ist nicht verfügbar
AOW2500ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 107A; 187.5W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 107A
Power dissipation: 187.5W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 97nC
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
AOW2500Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 11.5/152A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
Produkt ist nicht verfügbar
AOW2500ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 107A; 187.5W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 107A
Power dissipation: 187.5W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 97nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
AOW2500Alpha & Omega SemiconductorTrans MOSFET N-CH 150V 152A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW2500Alpha & Omega SemiconductorTrans MOSFET N-CH 150V 152A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW2502ALPHA & OMEGA SEMICONDUCTORAOW2502 THT N channel transistors
Produkt ist nicht verfügbar
AOW2502Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 16A/106A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 277W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V
Produkt ist nicht verfügbar
AOW25S65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-262 T/R
Produkt ist nicht verfügbar
AOW25S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V
Produkt ist nicht verfügbar
AOW284ALPHA & OMEGA SEMICONDUCTORAOW284 THT N channel transistors
Produkt ist nicht verfügbar
AOW284Alpha & Omega SemiconductorTrans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW284Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 15A/105A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V
Produkt ist nicht verfügbar
AOW290Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 140A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW290Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 17.5/140A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 500W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 50 V
Produkt ist nicht verfügbar
AOW2918Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13A TO262
Produkt ist nicht verfügbar
AOW2918Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 13A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW292Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 105A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW292Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 105A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
Produkt ist nicht verfügbar
AOW292ALPHA & OMEGA SEMICONDUCTORAOW292 THT N channel transistors
Produkt ist nicht verfügbar
AOW296Alpha & Omega Semiconductor100V N-Channel AlphaSGT
Produkt ist nicht verfügbar
AOW296Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 100V 70A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Produkt ist nicht verfügbar
AOW296ALPHA & OMEGA SEMICONDUCTORAOW296 THT N channel transistors
Produkt ist nicht verfügbar
AOW298Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9A TO262
Produkt ist nicht verfügbar
AOW29S50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO262
Produkt ist nicht verfügbar
AOW360A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
AOW360A70Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOW410Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V TO262
Produkt ist nicht verfügbar
AOW410-BIDECPushbutton Switches 22mm Pushbutton Black
Produkt ist nicht verfügbar
AOW410-GIDECPushbutton Switches 22mm Pushbutton Green
Produkt ist nicht verfügbar
AOW410-RIDECPushbutton Switches 22mm Pushbutton Red
Produkt ist nicht verfügbar
AOW410-SIDECPushbutton Switches 22mm Pushbutton Blue
Produkt ist nicht verfügbar
AOW410-YIDECPushbutton Switches 22mm Pushbutton Yellow
Produkt ist nicht verfügbar
AOW411-BIDECPushbutton Switches 22mm Pushbutton Black
Produkt ist nicht verfügbar
AOW411-GIDECPushbutton Switches 22mm Pushbutton Green
Produkt ist nicht verfügbar
AOW411-RIDECPushbutton Switches 22mm Pushbutton Red
Produkt ist nicht verfügbar
AOW411-SIDECPushbutton Switches 22mm Pushbutton Blue
Produkt ist nicht verfügbar
AOW411-WIDECPushbutton Switches 22mm Pushbutton White
Produkt ist nicht verfügbar
AOW411-YIDECPushbutton Switches 22mm Pushbutton Yellow
Produkt ist nicht verfügbar
AOW412-RIDECPushbutton Switches TW PB Maint 40mm Red Mshrm 1NO
Produkt ist nicht verfügbar
AOW418Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 105A 3-Pin(3+Tab) TO-262
Produkt ist nicht verfügbar
AOW418Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9.5A/105A TO262
Produkt ist nicht verfügbar
AOW421-RIDECPushbutton Switches 22mm Pushbutton Red
Produkt ist nicht verfügbar
AOW480Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 15A TO262
Produkt ist nicht verfügbar
AOW482ALPHA & OMEGA SEMICONDUCTORAOW482 THT N channel transistors
Produkt ist nicht verfügbar
AOW482Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 80V 11A TO262
Produkt ist nicht verfügbar
AOW482Alpha & Omega SemiconductorTrans MOSFET N-CH 80V 105A 3-Pin(3+Tab) TO-262 T/R
Produkt ist nicht verfügbar
AOW4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Produkt ist nicht verfügbar
AOW4S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-262 T/R
Produkt ist nicht verfügbar
AOW654NAIS
auf Bestellung 84 Stücke:
Lieferzeit 21-28 Tag (e)
AOW66412ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 104W; TO262
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
AOW66412Alpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
AOW66412Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Produkt ist nicht verfügbar
AOW66412ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 104W; TO262
Power dissipation: 104W
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
AOW66613Alpha & Omega Semiconductor60V N-Channel MOSFET
Produkt ist nicht verfügbar
AOW66613Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Produkt ist nicht verfügbar
AOW66613ALPHA & OMEGA SEMICONDUCTORAOW66613 THT N channel transistors
Produkt ist nicht verfügbar
AOW66613Alpha & Omega Semiconductor60V N-Channel MOSFET
Produkt ist nicht verfügbar
AOW66616ALPHA & OMEGA SEMICONDUCTORAOW66616 THT N channel transistors
Produkt ist nicht verfügbar
AOW66616Alpha & Omega Semiconductor60V N-Channel MOSFET
Produkt ist nicht verfügbar
AOW7S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW7S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-262 Tube
Produkt ist nicht verfügbar
AOW7S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO262
Produkt ist nicht verfügbar
AOW7S60ALPHA & OMEGA SEMICONDUCTORAOW7S60 THT N channel transistors
auf Bestellung 884 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.04 EUR
72+1.00 EUR
75+0.96 EUR
Mindestbestellmenge: 69
AOW7S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 7A TO262
Produkt ist nicht verfügbar
AOWA NO-120-NC-BR
Produktcode: 205689		Verschiedene Bauteile > Verschiedene Bauteile 1
Produkt ist nicht verfügbar
AOWF095A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 38A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
Produkt ist nicht verfügbar
AOWF095A60Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOWF10N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
AOWF10N60CAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
AOWF10N60_GV_001#MAlpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Part Status: Last Time Buy
Produkt ist nicht verfügbar
AOWF10N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 25 V
Produkt ist nicht verfügbar
AOWF10T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1346 pF @ 100 V
Produkt ist nicht verfügbar
AOWF10T60PAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF10T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 10A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V
Produkt ist nicht verfügbar
AOWF11A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO262F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
AOWF11C60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
Produkt ist nicht verfügbar
AOWF11N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF11N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
Produkt ist nicht verfügbar
AOWF11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhanced
Gate charge: 30.6nC
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
100+0.72 EUR
105+0.68 EUR
Mindestbestellmenge: 87
AOWF11N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262F
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhanced
Gate charge: 30.6nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 710 Stücke:
Lieferzeit 7-14 Tag (e)
87+0.83 EUR
100+0.72 EUR
105+0.68 EUR
Mindestbestellmenge: 87
AOWF11N70Alpha & Omega SemiconductorTrans MOSFET N-CH 700V 11A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF11N70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
AOWF11S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V
Produkt ist nicht verfügbar
AOWF11S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 11A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V
Produkt ist nicht verfügbar
AOWF125A60Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOWF125A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tj)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 32.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
Produkt ist nicht verfügbar
AOWF12N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Produkt ist nicht verfügbar
AOWF12N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF12N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-262F
Produkt ist nicht verfügbar
AOWF12N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Produkt ist nicht verfügbar
AOWF12N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
AOWF12N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF12T60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 100 V
Produkt ist nicht verfügbar
AOWF12T60PAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF12T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
50+1.35 EUR
100+1.29 EUR
500+1.15 EUR
Mindestbestellmenge: 10
AOWF14N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-262F
Produkt ist nicht verfügbar
AOWF14N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 14A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V
Produkt ist nicht verfügbar
AOWF15S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262F
Produkt ist nicht verfügbar
AOWF15S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-262F
Produkt ist nicht verfügbar
AOWF15S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 15A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V
Produkt ist nicht verfügbar
AOWF15S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 15A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V
Produkt ist nicht verfügbar
AOWF160A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 24A TO262F
auf Bestellung 982 Stücke:
Lieferzeit 10-14 Tag (e)
AOWF160A60Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOWF190A60ALPHA & OMEGA SEMICONDUCTORAOWF190A60 THT N channel transistors
Produkt ist nicht verfügbar
AOWF190A60Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
AOWF190A60Alpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
AOWF190A60CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tj)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
AOWF190A60CALPHA & OMEGA SEMICONDUCTORAOWF190A60C THT N channel transistors
Produkt ist nicht verfügbar
AOWF20S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-262F
Produkt ist nicht verfügbar
AOWF20S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Produkt ist nicht verfügbar
AOWF240Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 83A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF240Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 21A/83A
Produkt ist nicht verfügbar
AOWF25S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 25A TO262F
Produkt ist nicht verfügbar
AOWF25S65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-262F T/R
Produkt ist nicht verfügbar
AOWF2606Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 13A/51A TO262F
Produkt ist nicht verfügbar
AOWF280A60Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOWF296Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 37A TO262F
Produkt ist nicht verfügbar
AOWF296ALPHA & OMEGA SEMICONDUCTORAOWF296 THT N channel transistors
Produkt ist nicht verfügbar
AOWF360A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Power Dissipation (Max): 29.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
AOWF360A70Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOWF380A60Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOWF380A60CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO262F
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
10+2.83 EUR
100+2.28 EUR
500+1.87 EUR
Mindestbestellmenge: 6
AOWF412Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 7.8A/30A
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Produkt ist nicht verfügbar
AOWF412ALPHA & OMEGA SEMICONDUCTORAOWF412 THT N channel transistors
Produkt ist nicht verfügbar
AOWF450A70Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
Produkt ist nicht verfügbar
AOWF4N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF4N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar
AOWF4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
Produkt ist nicht verfügbar
AOWF600A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 8A TO262F
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+3.10 EUR
100+2.49 EUR
500+2.05 EUR
Mindestbestellmenge: 6
AOWF600A60Alpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
AOWF600A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 8.5A TO262F
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
10+3.30 EUR
100+2.65 EUR
500+2.18 EUR
Mindestbestellmenge: 5
AOWF600A70FAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 8.5A TO262F
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.68 EUR
10+3.30 EUR
100+2.65 EUR
500+2.18 EUR
Mindestbestellmenge: 5
AOWF7S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 100 V
Produkt ist nicht verfügbar
AOWF7S60ALPHA & OMEGA SEMICONDUCTORAOWF7S60 THT N channel transistors
auf Bestellung 968 Stücke:
Lieferzeit 7-14 Tag (e)
85+0.85 EUR
88+0.82 EUR
93+0.77 EUR
500+0.74 EUR
Mindestbestellmenge: 85
AOWF7S65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 7A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V
Produkt ist nicht verfügbar
AOWF8N50Alpha & Omega SemiconductorTrans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF8N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 8A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Produkt ist nicht verfügbar
AOWF9N70Alpha & Omega SemiconductorTrans MOSFET N-CH 700V 9A 3-Pin(3+Tab) TO-262F Tube
Produkt ist nicht verfügbar
AOWF9N70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 9A TO262F
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar