![AOW11N60 AOW11N60](https://ce8dc832c.cloudimg.io/v7/_cdn_/8A/7E/00/00/1/59304_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=4d8892c19926fb193700534beff4a6fcd970f821)
AOW11N60 ALPHA & OMEGA SEMICONDUCTOR
![AOW11N60.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: THT
Gate charge: 30.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 698 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
88+ | 0.82 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
500+ | 0.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOW11N60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 11A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-262, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V.
Weitere Produktangebote AOW11N60 nach Preis ab 0.64 EUR bis 2.53 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AOW11N60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 8A; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Case: TO262 Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: THT Gate charge: 30.6nC Kind of channel: enhanced |
auf Bestellung 698 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
AOW11N60 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-262 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V |
auf Bestellung 769 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
![]() |
AOW11N60 | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |