AOWF412 ALPHA & OMEGA SEMICONDUCTOR
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details AOWF412 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 7.8A/30A, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-262F, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V.
Weitere Produktangebote AOWF412
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
|
AOWF412 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-262F Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V |
Produkt ist nicht verfügbar |