![AOW15S60 AOW15S60](https://ce8dc832c.cloudimg.io/v7/_cdn_/8A/7E/00/00/1/59304_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=4d8892c19926fb193700534beff4a6fcd970f821)
AOW15S60 ALPHA & OMEGA SEMICONDUCTOR
![TO262.pdf](/images/adobe-acrobat.png)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 15.6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 831 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.42 EUR |
57+ | 1.27 EUR |
59+ | 1.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOW15S60 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 600V 15A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V.
Weitere Produktangebote AOW15S60 nach Preis ab 1.22 EUR bis 1.42 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
AOW15S60 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 10A; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Case: TO262 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 15.6nC Kind of channel: enhanced |
auf Bestellung 831 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
![]() |
AOW15S60 | Hersteller : Alpha & Omega Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||
|
AOW15S60 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V |
Produkt ist nicht verfügbar |