Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (349981) > Seite 1065 nach 5834
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||
---|---|---|---|---|---|---|---|
JAN2N3740 | Microchip Technology |
Description: TRANS PNP 60V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W Qualification: MIL-PRF-19500/441 |
Produkt ist nicht verfügbar |
||||
JAN2N3741 | Microchip Technology |
Description: TRANS PNP 80V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W Qualification: MIL-PRF-19500/441 |
Produkt ist nicht verfügbar |
||||
JANTX2N3741 | Microchip Technology |
Description: TRANS PNP 80V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W Qualification: MIL-PRF-19500/441 |
Produkt ist nicht verfügbar |
||||
JANTXV2N3741 | Microchip Technology |
Description: TRANS PNP 80V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W Qualification: MIL-PRF-19500/441 |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||
JANTX2N3766 | Microchip Technology |
Description: TRANS NPN 60V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W Qualification: MIL-PRF-19500/518 |
Produkt ist nicht verfügbar |
||||
Jantxv2N3766 | Microchip Technology |
Description: TRANS NPN 60V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W Qualification: MIL-PRF-19500/518 |
Produkt ist nicht verfügbar |
||||
JAN2N3767 | Microchip Technology |
Description: TRANS NPN 80V 4A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W Grade: Military Qualification: MIL-PRF-19500/518 |
Produkt ist nicht verfügbar |
||||
JAN2N3791 | Microchip Technology |
Description: TRANS PNP 60V 10A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W Grade: Military Qualification: MIL-PRF-19500/379 |
Produkt ist nicht verfügbar |
||||
JANTXV2N3791 | Microchip Technology |
Description: TRANS PNP 60V 10A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W Grade: Military Qualification: MIL-PRF-19500/379 |
Produkt ist nicht verfügbar |
||||
JAN2N3792 | Microchip Technology |
Description: TRANS PNP 80V 10A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 5 W Grade: Military Qualification: MIL-PRF-19500/379 |
Produkt ist nicht verfügbar |
||||
Jan2N3810U | Microchip Technology |
Description: TRANS 2PNP 60V 0.05A Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
Produkt ist nicht verfügbar |
||||
Jantx2N3867S | Microchip Technology | Description: TRANS PNP 40V 0.003A TO39 |
Produkt ist nicht verfügbar |
||||
JAN2N3868 | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/350 |
Produkt ist nicht verfügbar |
||||
Jan2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/350 |
Produkt ist nicht verfügbar |
||||
Jantx2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/350 |
Produkt ist nicht verfügbar |
||||
Jantxv2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/350 |
Produkt ist nicht verfügbar |
||||
JAN2N3902 | Microchip Technology | Description: TRANS NPN 400V 3.5A TO3 |
Produkt ist nicht verfügbar |
||||
JANTX2N3902 | Microchip Technology | Description: TRANS NPN 400V 3.5A TO3 |
Produkt ist nicht verfügbar |
||||
Jantxv2N3902 | Microchip Technology | Description: TRANS NPN 400V 3.5A TO3 |
Produkt ist nicht verfügbar |
||||
2N4033UA | Microchip Technology |
Description: TRANS PNP 80V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
||||
2N4033UB | Microchip Technology |
Description: TRANS PNP 80V 1A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: UB Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
||||
Jan2N4033UB | Microchip Technology |
Description: TRANS PNP 80V 1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Qualification: MIL-PRF-19500/512 |
Produkt ist nicht verfügbar |
||||
Jantx2N4033UB | Microchip Technology |
Description: TRANS PNP 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 500 mW Qualification: MIL-PRF-19500/512 |
Produkt ist nicht verfügbar |
||||
JAN2N4237 | Microchip Technology |
Description: TRANS NPN 40V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/581 |
Produkt ist nicht verfügbar |
||||
JANTX2N4237 | Microchip Technology |
Description: TRANS NPN 40V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/581 |
Produkt ist nicht verfügbar |
||||
JANTXV2N4237 | Microchip Technology |
Description: TRANS NPN 40V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/581 |
Produkt ist nicht verfügbar |
||||
JAN2N4238 | Microchip Technology | Description: TRANS NPN 60V 1A TO39 |
Produkt ist nicht verfügbar |
||||
JANTX2N4238 | Microchip Technology | Description: TRANS NPN 60V 1A TO39 |
Produkt ist nicht verfügbar |
||||
JANTXV2N4238 | Microchip Technology | Description: TRANS NPN 60V 1A TO39 |
Produkt ist nicht verfügbar |
||||
JAN2N4239 | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||
JANTX2N4239 | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||
JANTXV2N4239 | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
||||
2N4261 | Microchip Technology | Description: TRANS PNP 15V 0.03A TO-72 |
Produkt ist nicht verfügbar |
||||
JAN2N4261 | Microchip Technology | Description: TRANS PNP 15V 0.03A TO-72 |
Produkt ist nicht verfügbar |
||||
JANTXV2N4261 | Microchip Technology | Description: TRANS PNP 15V 0.03A TO-72 |
Produkt ist nicht verfügbar |
||||
2N4261UB | Microchip Technology | Description: TRANS PNP 15V 0.03A |
Produkt ist nicht verfügbar |
||||
JAN2N4261UB | Microchip Technology | Description: TRANS PNP 15V 0.03A |
Produkt ist nicht verfügbar |
||||
JANTX2N4261UB | Microchip Technology |
Description: TRANS PNP 15V 0.03A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Qualification: MIL-PRF-19500/511 |
Produkt ist nicht verfügbar |
||||
JANTXV2N4261UB | Microchip Technology | Description: TRANS PNP 15V 0.03A |
Produkt ist nicht verfügbar |
||||
2N4405 | Microchip Technology |
Description: TRANS PNP TO-39 Packaging: Bulk |
Produkt ist nicht verfügbar |
||||
2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
||||
JAN2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
Produkt ist nicht verfügbar |
||||
JANTX2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
Produkt ist nicht verfügbar |
||||
Jantxv2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
Produkt ist nicht verfügbar |
||||
JAN2N5339 | Microchip Technology |
Description: TRANS NPN 100V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Grade: Military Qualification: MIL-PRF-19500/560 |
Produkt ist nicht verfügbar |
||||
Jantxv2N5339 | Microchip Technology |
Description: TRANS NPN 100V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Grade: Military Qualification: MIL-PRF-19500/560 |
Produkt ist nicht verfügbar |
||||
JAN2N5415 | Microchip Technology |
Description: TRANS PNP 200V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
Jantxv2N5415 | Microchip Technology |
Description: TRANS PNP 200V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
JAN2N5415S | Microchip Technology |
Description: TRANS PNP 200V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
Jantx2N5415S | Microchip Technology |
Description: TRANS PNP 200V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
Jantxv2N5415S | Microchip Technology |
Description: TRANS PNP 200V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
JAN2N5416 | Microchip Technology |
Description: TRANS PNP 300V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
JANTX2N5416 | Microchip Technology |
Description: TRANS PNP 300V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
Jan2N5416S | Microchip Technology |
Description: TRANS PNP 300V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
Jantxv2N5416S | Microchip Technology |
Description: TRANS PNP 300V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
Produkt ist nicht verfügbar |
||||
2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
||||
Jan2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/423 |
Produkt ist nicht verfügbar |
||||
Jantx2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/423 |
Produkt ist nicht verfügbar |
||||
Jantxv2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Qualification: MIL-PRF-19500/423 |
Produkt ist nicht verfügbar |
||||
JAN2N5664 | Microchip Technology |
Description: TRANS NPN 200V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/455 |
Produkt ist nicht verfügbar |
JAN2N3740 |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
Description: TRANS PNP 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
Produkt ist nicht verfügbar
JAN2N3741 |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
Produkt ist nicht verfügbar
JANTX2N3741 |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
Produkt ist nicht verfügbar
JANTXV2N3741 |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
Description: TRANS PNP 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 40.59 EUR |
JANTX2N3766 |
Hersteller: Microchip Technology
Description: TRANS NPN 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/518
Description: TRANS NPN 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/518
Produkt ist nicht verfügbar
Jantxv2N3766 |
Hersteller: Microchip Technology
Description: TRANS NPN 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/518
Description: TRANS NPN 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/518
Produkt ist nicht verfügbar
JAN2N3767 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Grade: Military
Qualification: MIL-PRF-19500/518
Description: TRANS NPN 80V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Grade: Military
Qualification: MIL-PRF-19500/518
Produkt ist nicht verfügbar
JAN2N3791 |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 10A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
Description: TRANS PNP 60V 10A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
Produkt ist nicht verfügbar
JANTXV2N3791 |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 10A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
Description: TRANS PNP 60V 10A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
Produkt ist nicht verfügbar
JAN2N3792 |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 10A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
Description: TRANS PNP 80V 10A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 2V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Grade: Military
Qualification: MIL-PRF-19500/379
Produkt ist nicht verfügbar
Jan2N3810U |
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Produkt ist nicht verfügbar
Jantx2N3867S |
Hersteller: Microchip Technology
Description: TRANS PNP 40V 0.003A TO39
Description: TRANS PNP 40V 0.003A TO39
Produkt ist nicht verfügbar
JAN2N3868 |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.003A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Description: TRANS PNP 60V 0.003A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Produkt ist nicht verfügbar
Jan2N3868S |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Produkt ist nicht verfügbar
Jantx2N3868S |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Produkt ist nicht verfügbar
Jantxv2N3868S |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/350
Produkt ist nicht verfügbar
JAN2N3902 |
Hersteller: Microchip Technology
Description: TRANS NPN 400V 3.5A TO3
Description: TRANS NPN 400V 3.5A TO3
Produkt ist nicht verfügbar
JANTX2N3902 |
Hersteller: Microchip Technology
Description: TRANS NPN 400V 3.5A TO3
Description: TRANS NPN 400V 3.5A TO3
Produkt ist nicht verfügbar
Jantxv2N3902 |
Hersteller: Microchip Technology
Description: TRANS NPN 400V 3.5A TO3
Description: TRANS NPN 400V 3.5A TO3
Produkt ist nicht verfügbar
2N4033UA |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS PNP 80V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
2N4033UB |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Description: TRANS PNP 80V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: UB
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Jan2N4033UB |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
Description: TRANS PNP 80V 1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
Produkt ist nicht verfügbar
Jantx2N4033UB |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
Description: TRANS PNP 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/512
Produkt ist nicht verfügbar
JAN2N4237 |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Produkt ist nicht verfügbar
JANTX2N4237 |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Produkt ist nicht verfügbar
JANTXV2N4237 |
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Produkt ist nicht verfügbar
JAN2N4238 |
Hersteller: Microchip Technology
Description: TRANS NPN 60V 1A TO39
Description: TRANS NPN 60V 1A TO39
Produkt ist nicht verfügbar
JANTX2N4238 |
Hersteller: Microchip Technology
Description: TRANS NPN 60V 1A TO39
Description: TRANS NPN 60V 1A TO39
Produkt ist nicht verfügbar
JANTXV2N4238 |
Hersteller: Microchip Technology
Description: TRANS NPN 60V 1A TO39
Description: TRANS NPN 60V 1A TO39
Produkt ist nicht verfügbar
JAN2N4239 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
JANTX2N4239 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
JANTXV2N4239 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
2N4261 |
Hersteller: Microchip Technology
Description: TRANS PNP 15V 0.03A TO-72
Description: TRANS PNP 15V 0.03A TO-72
Produkt ist nicht verfügbar
JAN2N4261 |
Hersteller: Microchip Technology
Description: TRANS PNP 15V 0.03A TO-72
Description: TRANS PNP 15V 0.03A TO-72
Produkt ist nicht verfügbar
JANTXV2N4261 |
Hersteller: Microchip Technology
Description: TRANS PNP 15V 0.03A TO-72
Description: TRANS PNP 15V 0.03A TO-72
Produkt ist nicht verfügbar
2N4261UB |
Hersteller: Microchip Technology
Description: TRANS PNP 15V 0.03A
Description: TRANS PNP 15V 0.03A
Produkt ist nicht verfügbar
JAN2N4261UB |
Hersteller: Microchip Technology
Description: TRANS PNP 15V 0.03A
Description: TRANS PNP 15V 0.03A
Produkt ist nicht verfügbar
JANTX2N4261UB |
Hersteller: Microchip Technology
Description: TRANS PNP 15V 0.03A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
Description: TRANS PNP 15V 0.03A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
Produkt ist nicht verfügbar
JANTXV2N4261UB |
Hersteller: Microchip Technology
Description: TRANS PNP 15V 0.03A
Description: TRANS PNP 15V 0.03A
Produkt ist nicht verfügbar
2N4405 |
Produkt ist nicht verfügbar
2N4449 |
Hersteller: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
JAN2N4449 |
Hersteller: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
JANTX2N4449 |
Hersteller: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
Jantxv2N4449 |
Hersteller: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
JAN2N5339 |
Hersteller: Microchip Technology
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
Produkt ist nicht verfügbar
Jantxv2N5339 |
Hersteller: Microchip Technology
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
Produkt ist nicht verfügbar
JAN2N5415 |
Hersteller: Microchip Technology
Description: TRANS PNP 200V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
Jantxv2N5415 |
Hersteller: Microchip Technology
Description: TRANS PNP 200V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
JAN2N5415S |
Hersteller: Microchip Technology
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
Jantx2N5415S |
Hersteller: Microchip Technology
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
Jantxv2N5415S |
Hersteller: Microchip Technology
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
JAN2N5416 |
Hersteller: Microchip Technology
Description: TRANS PNP 300V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
JANTX2N5416 |
Hersteller: Microchip Technology
Description: TRANS PNP 300V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
Jan2N5416S |
Hersteller: Microchip Technology
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
Jantxv2N5416S |
Hersteller: Microchip Technology
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar
2N5581 |
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Jan2N5581 |
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/423
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/423
Produkt ist nicht verfügbar
Jantx2N5581 |
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/423
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/423
Produkt ist nicht verfügbar
Jantxv2N5581 |
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/423
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/423
Produkt ist nicht verfügbar
JAN2N5664 |
Hersteller: Microchip Technology
Description: TRANS NPN 200V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
Description: TRANS NPN 200V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
Produkt ist nicht verfügbar