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JANTXV2N5416S Microsemi


2n5415.pdf Hersteller: Microsemi
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag
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Technische Details JANTXV2N5416S Microsemi

Description: TRANS PNP 300V 1A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Supplier Device Package: TO-39 (TO-205AD), Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 750 mW, Grade: Military, Qualification: MIL-PRF-19500/485.

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Jantxv2N5416S Jantxv2N5416S Hersteller : Microchip Technology 132283-lds-0305-1-datasheet Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Produkt ist nicht verfügbar