Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (349991) > Seite 1060 nach 5834
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JAN1N5539B-1 | Microchip Technology |
 Description: DIODE ZENER 19V 500MW DO35Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 19 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 17.1 V Qualification: MIL-PRF-19500/437 |
Produkt ist nicht verfügbar |
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JANTXV1N5539B-1 | Microchip Technology |
Description: DIODE ZENER 19V 500MW DO35 |
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| JAN1N5550US | Microchip Technology |
Description: DIODE GEN PURP 200V 3A B-MELF |
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JAN1N5551US | Microchip Technology |
Description: DIODE GEN PURP 400V 3A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/420 |
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JAN1N5553US | Microchip Technology |
Description: DIODE GEN PURP 800V 3A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JANTX1N5553US | Microchip Technology |
Description: DIODE GEN PURP 800V 3A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
Produkt ist nicht verfügbar |
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| JANTXV1N5554US | Microchip Technology |
Description: DIODE GEN PURP 1KV 3A B-MELF |
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JANTXV1N5615US | Microchip Technology |
Description: DIODE GEN PURP 200V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V Qualification: MIL-PRF-19500/429 |
Produkt ist nicht verfügbar |
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JAN1N5619US | Microchip Technology |
Description: DIODE GEN PURP 600V 1A D-5A |
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JANTX1N5619US | Microchip Technology |
Description: DIODE GEN PURP 600V 1A D-5A |
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JANTXV1N5619US | Microchip Technology |
Description: DIODE GEN PURP 600V 1A D-5A |
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JAN1N5804URS | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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JANTX1N5804URS | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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JANTXV1N5804URS | Microchip Technology |
Description: DIODE GEN PURP 100V 1A A-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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JAN1N5811URS | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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JANTX1N5811URS | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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JANTXV1N5811URS | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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JANTX1N6121 | Microchip Technology |
Description: TVS DIODE 32.7VWM 62.06VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.08A Voltage - Reverse Standoff (Typ): 32.7V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 38.86V Voltage - Clamping (Max) @ Ipp: 62.06V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
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JAN1N6123US | Microchip Technology |
Description: TVS DIODE 38.8VWM 73.61V SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.75A Voltage - Reverse Standoff (Typ): 38.8V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 46.08V Voltage - Clamping (Max) @ Ipp: 73.61V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
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| JANTX1N6148 | Microchip Technology |
Description: TVS DIODE 13.7VWM 26.36VC AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56.81A Voltage - Reverse Standoff (Typ): 13.7V Supplier Device Package: C, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.25V Voltage - Clamping (Max) @ Ipp: 26.36V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/516 |
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JAN1N6151US | Microchip Technology |
Description: TVS DIODE 18.2VWM 34.97V SQ-MELF |
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JAN1N6156AUS | Microchip Technology |
Description: TVS DIODE 29.7VWM 53.6VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28A Voltage - Reverse Standoff (Typ): 29.7V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
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JANTXV1N6166AUS | Microchip Technology |
Description: TVS DIODE 76VWM 137.6VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 76V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 95V Voltage - Clamping (Max) @ Ipp: 137.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/516 |
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JAN1N6168US | Microchip Technology |
Description: TVS DIODE 91.2VWM 173.36VC MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.65A Voltage - Reverse Standoff (Typ): 91.2V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 108.3V Voltage - Clamping (Max) @ Ipp: 173.36V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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| JAN1N6169 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.98A Voltage - Reverse Standoff (Typ): 98.8V Supplier Device Package: C, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 117.33V Voltage - Clamping (Max) @ Ipp: 187.74V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
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| JANTX1N6169 | Microchip Technology |
Description: TVS DIODE 98.8VWM 187.74VC AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.98A Voltage - Reverse Standoff (Typ): 98.8V Supplier Device Package: C, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 117.33V Voltage - Clamping (Max) @ Ipp: 187.74V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500/516 |
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JANTX1N6169AUS | Microchip Technology |
Description: TVS DIODE 98.8VWM 178.8V SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.4A Voltage - Reverse Standoff (Typ): 98.8V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 123.5V Voltage - Clamping (Max) @ Ipp: 178.8V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
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JANTX1N6171AUS | Microchip Technology |
Description: TVS DIODE 121.6VWM 218.4VC MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.9A Voltage - Reverse Standoff (Typ): 121.6V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 152V Voltage - Clamping (Max) @ Ipp: 218.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500/516 |
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JAN1N6171US | Microchip Technology |
Description: TVS DIODE 121.6V 229.32V SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.56A Voltage - Reverse Standoff (Typ): 121.6V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 144.4V Voltage - Clamping (Max) @ Ipp: 229.32V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500/516 |
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JAN1N6172AUS | Microchip Technology |
Description: TVS DIODE 136.8VWM 245.7VC MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.1A Voltage - Reverse Standoff (Typ): 136.8V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 245.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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JANTX1N6321US | Microchip Technology |
Description: DIODE ZENER 7.5V 500MW MELF |
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JAN1N6330 | Microchip Technology |
Description: DIODE ZENER 18V 500MW DO35 |
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JANTX1N6330 | Microchip Technology |
Description: DIODE ZENER 18V 500MW DO35 |
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JAN1N6330US | Microchip Technology |
Description: DIODE ZENER 18V 500MW MELF |
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JAN1N6331 | Microchip Technology |
Description: DIODE ZENER 20V 500MW DO35 |
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| JANTXV1N6331 | Microchip Technology |
Description: DIODE ZENER 20V 500MW DO35 |
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JAN1N6331US | Microchip Technology |
Description: DIODE ZENER 20V 500MW MELF |
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JAN1N6332 | Microchip Technology |
Description: DIODE ZENER 22V 500MW DO35 |
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| JANTXV1N6332 | Microchip Technology |
Description: DIODE ZENER 22V 500MW DO35 |
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JAN1N6332US | Microchip Technology |
Description: DIODE ZENER 22V 500MW MELF |
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JAN1N6333 | Microchip Technology |
Description: DIODE ZENER 24V 500MW DO35 |
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JAN1N6334 | Microchip Technology |
Description: DIODE ZENER 27V 500MW DO35 |
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| JANTXV1N6334 | Microchip Technology |
Description: DIODE ZENER 27V 500MW DO35 |
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JAN1N6334US | Microchip Technology |
Description: DIODE ZENER 27V 500MW MELF |
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JAN1N6335 | Microchip Technology |
Description: DIODE ZENER 30V 500MW DO35 |
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| JANTXV1N6335 | Microchip Technology |
Description: DIODE ZENER 30V 500MW DO35 |
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JAN1N6335US | Microchip Technology |
Description: DIODE ZENER 30V 500MW MELF |
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JAN1N6336 | Microchip Technology |
Description: DIODE ZENER 33V 500MW DO35 |
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JANTX1N6336 | Microchip Technology |
Description: DIODE ZENER 33V 500MW DO35 |
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| JANTXV1N6336 | Microchip Technology |
Description: DIODE ZENER 33V 500MW DO35 |
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JAN1N6336US | Microchip Technology |
Description: DIODE ZENER 33V 500MW MELF Packaging: Bulk Tolerance: ±5% Package / Case: SQ-MELF, B Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: B, SQ-MELF Grade: Military Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 50 nA @ 25 V Qualification: MIL-PRF-19500/533 |
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JANTX1N6337 | Microchip Technology |
Description: DIODE ZENER 36V 500MW DO35 |
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| JANTXV1N6337 | Microchip Technology |
Description: DIODE ZENER 36V 500MW DO35 |
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JAN1N6338 | Microchip Technology |
Description: DIODE ZENER 39V 500MW DO35 |
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| JANTXV1N6338 | Microchip Technology |
Description: DIODE ZENER 39V 500MW DO35 |
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JAN1N6339 | Microchip Technology |
Description: DIODE ZENER 43V 500MW DO35 |
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JANTX1N6339 | Microchip Technology |
Description: DIODE ZENER 43V 500MW DO35 |
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JANTXV1N6339 | Microchip Technology |
Description: DIODE ZENER 43V 500MW DO35 |
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JAN1N6339US | Microchip Technology |
Description: DIODE ZENER 43V 500MW MELF |
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JANTX1N6621U | Microchip Technology |
Description: DIODE GEN PURP 400V 1.2A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V Qualification: MIL-PRF-19500/585 |
Produkt ist nicht verfügbar |
| JAN1N5539B-1 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 17.1 V
Qualification: MIL-PRF-19500/437
Description: DIODE ZENER 19V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 17.1 V
Qualification: MIL-PRF-19500/437
Produkt ist nicht verfügbar
| JANTXV1N5539B-1 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
Description: DIODE ZENER 19V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N5550US |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A B-MELF
Description: DIODE GEN PURP 200V 3A B-MELF
Produkt ist nicht verfügbar
| JAN1N5551US |
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Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
Produkt ist nicht verfügbar
| JAN1N5553US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
| JANTX1N5553US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
| JANTXV1N5554US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 3A B-MELF
Description: DIODE GEN PURP 1KV 3A B-MELF
Produkt ist nicht verfügbar
| JANTXV1N5615US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
Produkt ist nicht verfügbar
| JAN1N5619US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1A D-5A
Description: DIODE GEN PURP 600V 1A D-5A
Produkt ist nicht verfügbar
| JANTX1N5619US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1A D-5A
Description: DIODE GEN PURP 600V 1A D-5A
Produkt ist nicht verfügbar
| JANTXV1N5619US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1A D-5A
Description: DIODE GEN PURP 600V 1A D-5A
Produkt ist nicht verfügbar
| JAN1N5804URS |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANTX1N5804URS |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JANTXV1N5804URS |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 100V 1A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
| JAN1N5811URS |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
| JANTX1N5811URS |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
| JANTXV1N5811URS |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
| JANTX1N6121 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 32.7VWM 62.06VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.08A
Voltage - Reverse Standoff (Typ): 32.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 38.86V
Voltage - Clamping (Max) @ Ipp: 62.06V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 32.7VWM 62.06VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.08A
Voltage - Reverse Standoff (Typ): 32.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 38.86V
Voltage - Clamping (Max) @ Ipp: 62.06V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| JAN1N6123US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 38.8VWM 73.61V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.75A
Voltage - Reverse Standoff (Typ): 38.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 46.08V
Voltage - Clamping (Max) @ Ipp: 73.61V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 38.8VWM 73.61V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.75A
Voltage - Reverse Standoff (Typ): 38.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 46.08V
Voltage - Clamping (Max) @ Ipp: 73.61V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JANTX1N6148 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13.7VWM 26.36VC AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.81A
Voltage - Reverse Standoff (Typ): 13.7V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.25V
Voltage - Clamping (Max) @ Ipp: 26.36V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 13.7VWM 26.36VC AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.81A
Voltage - Reverse Standoff (Typ): 13.7V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.25V
Voltage - Clamping (Max) @ Ipp: 26.36V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JAN1N6151US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 18.2VWM 34.97V SQ-MELF
Description: TVS DIODE 18.2VWM 34.97V SQ-MELF
Produkt ist nicht verfügbar
| JAN1N6156AUS |
|
Hersteller: Microchip Technology
Description: TVS DIODE 29.7VWM 53.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 29.7VWM 53.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 29.7V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JANTXV1N6166AUS |
|
Hersteller: Microchip Technology
Description: TVS DIODE 76VWM 137.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 76V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 76VWM 137.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 76V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JAN1N6168US |
|
Hersteller: Microchip Technology
Description: TVS DIODE 91.2VWM 173.36VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.65A
Voltage - Reverse Standoff (Typ): 91.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 108.3V
Voltage - Clamping (Max) @ Ipp: 173.36V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 91.2VWM 173.36VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.65A
Voltage - Reverse Standoff (Typ): 91.2V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 108.3V
Voltage - Clamping (Max) @ Ipp: 173.36V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| JAN1N6169 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.98A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.98A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JANTX1N6169 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.98A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 98.8VWM 187.74VC AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.98A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 117.33V
Voltage - Clamping (Max) @ Ipp: 187.74V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JANTX1N6169AUS |
|
Hersteller: Microchip Technology
Description: TVS DIODE 98.8VWM 178.8V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 98.8VWM 178.8V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JANTX1N6171AUS |
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Hersteller: Microchip Technology
Description: TVS DIODE 121.6VWM 218.4VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 218.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 121.6VWM 218.4VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 218.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JAN1N6171US |
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Hersteller: Microchip Technology
Description: TVS DIODE 121.6V 229.32V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.56A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144.4V
Voltage - Clamping (Max) @ Ipp: 229.32V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 121.6V 229.32V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.56A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144.4V
Voltage - Clamping (Max) @ Ipp: 229.32V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
| JAN1N6172AUS |
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Hersteller: Microchip Technology
Description: TVS DIODE 136.8VWM 245.7VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 136.8V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 245.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 136.8VWM 245.7VC MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 136.8V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 245.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| JANTX1N6321US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 500MW MELF
Description: DIODE ZENER 7.5V 500MW MELF
Produkt ist nicht verfügbar
| JAN1N6330 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
| JANTX1N6330 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6330US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW MELF
Description: DIODE ZENER 18V 500MW MELF
Produkt ist nicht verfügbar
| JAN1N6331 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 20V 500MW DO35
Description: DIODE ZENER 20V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6331 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 20V 500MW DO35
Description: DIODE ZENER 20V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6331US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 20V 500MW MELF
Description: DIODE ZENER 20V 500MW MELF
Produkt ist nicht verfügbar
| JAN1N6332 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6332 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6332US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 22V 500MW MELF
Description: DIODE ZENER 22V 500MW MELF
Produkt ist nicht verfügbar
| JAN1N6333 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 24V 500MW DO35
Description: DIODE ZENER 24V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6334 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 27V 500MW DO35
Description: DIODE ZENER 27V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6334 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 27V 500MW DO35
Description: DIODE ZENER 27V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6334US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 27V 500MW MELF
Description: DIODE ZENER 27V 500MW MELF
Produkt ist nicht verfügbar
| JAN1N6335 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 30V 500MW DO35
Description: DIODE ZENER 30V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6335 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 30V 500MW DO35
Description: DIODE ZENER 30V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6335US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 30V 500MW MELF
Description: DIODE ZENER 30V 500MW MELF
Produkt ist nicht verfügbar
| JAN1N6336 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
| JANTX1N6336 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6336 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6336US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Description: DIODE ZENER 33V 500MW MELF
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 25 V
Qualification: MIL-PRF-19500/533
Produkt ist nicht verfügbar
| JANTX1N6337 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 36V 500MW DO35
Description: DIODE ZENER 36V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6337 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 36V 500MW DO35
Description: DIODE ZENER 36V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6338 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO35
Description: DIODE ZENER 39V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6338 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO35
Description: DIODE ZENER 39V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6339 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 43V 500MW DO35
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
| JANTX1N6339 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 43V 500MW DO35
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
| JANTXV1N6339 |
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Hersteller: Microchip Technology
Description: DIODE ZENER 43V 500MW DO35
Description: DIODE ZENER 43V 500MW DO35
Produkt ist nicht verfügbar
| JAN1N6339US |
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Hersteller: Microchip Technology
Description: DIODE ZENER 43V 500MW MELF
Description: DIODE ZENER 43V 500MW MELF
Produkt ist nicht verfügbar
| JANTX1N6621U |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1.2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Qualification: MIL-PRF-19500/585
Description: DIODE GEN PURP 400V 1.2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Qualification: MIL-PRF-19500/585
Produkt ist nicht verfügbar