JAN2N3740

JAN2N3740 Microchip / Microsemi


LDS_0021-1593783.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 4A 25W NPN Power BJT THT
auf Bestellung 4 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+56.36 EUR
500+ 52.34 EUR
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Technische Details JAN2N3740 Microchip / Microsemi

Description: TRANS PNP 60V 4A TO66, Packaging: Bulk, Package / Case: TO-213AA, TO-66-2, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V, Supplier Device Package: TO-66 (TO-213AA), Grade: Military, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 25 W, Qualification: MIL-PRF-19500/441.

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JAN2N3740 Hersteller : MOT 8828-lds-0021-pdf
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
JAN2N3740 Hersteller : Microchip Technology 8828-lds-0021-pdf Description: TRANS PNP 60V 4A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 125mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Qualification: MIL-PRF-19500/441
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