Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75522) > Seite 602 nach 1259
Foto | Bezeichnung | Hersteller | Beschreibung |
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AP1084D15L-13 | Diodes Incorporated |
Description: IC REG LINEAR 1.5V 5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 5A Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: TO-252-3 Voltage - Output (Min/Fixed): 1.5V Voltage Dropout (Max): 1.4V @ 5A Protection Features: Over Current, Over Temperature |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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AP1084D18L-13 | Diodes Incorporated |
Description: IC REG LINEAR 1.8V 5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 5A Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: TO-252-3 Voltage - Output (Min/Fixed): 1.8V Voltage Dropout (Max): 1.4V @ 5A Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
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74LVC1G07Z-7 | Diodes Incorporated |
Description: IC BUFF/DVR O/D SOT553 Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: SOT-553 |
Produkt ist nicht verfügbar |
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74LVC1G07Z-7 | Diodes Incorporated |
Description: IC BUFF/DVR O/D SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: SOT-553 |
auf Bestellung 3488 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G07FX4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1409-6 |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G07FW5-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X1-DFN1010-6 |
auf Bestellung 180000 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G07FW5-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X1-DFN1010-6 |
auf Bestellung 183937 Stücke: Lieferzeit 10-14 Tag (e) |
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GB2000039 | Diodes Incorporated |
Description: CRYSTAL 20.0000MHZ 20PF Packaging: Tape & Reel (TR) Load Capacitance: 20pF Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 30 Ohms Frequency: 20 MHz |
Produkt ist nicht verfügbar |
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UF22F6201Z | Diodes Incorporated |
Description: CRYSTAL OSCILLATOR SEAM2520 T&R Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 2.5V ~ 3.3V Current - Supply (Max): 50mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 156.25 MHz Base Resonator: Crystal |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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UF22F6201Z | Diodes Incorporated |
Description: CRYSTAL OSCILLATOR SEAM2520 T&R Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 2.5V ~ 3.3V Current - Supply (Max): 50mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 156.25 MHz Base Resonator: Crystal |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTA114EUAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
auf Bestellung 141000 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTA114EUAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Supplier Device Package: SOT-323 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
auf Bestellung 141000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA114WCA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA114WCA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA114YCA-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTB123YC-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 1236000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTB123YC-7-F | Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 1238483 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP2027FQTA | Diodes Incorporated |
Description: PWR LOW SAT TRANSISTOR SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 200mA, 4A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 165MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: AEC-Q101 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3VDP3212ZLEX | Diodes Incorporated |
Description: IC DEMULTIPLEXER 2LANE 32TQFN Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm (Typ) -3db Bandwidth: 4.7GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
Produkt ist nicht verfügbar |
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PI3VDP3212ZLEX | Diodes Incorporated |
Description: IC DEMULTIPLEXER 2LANE 32TQFN Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm (Typ) -3db Bandwidth: 4.7GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
auf Bestellung 3370 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3VDP3212ZLE+DA | Diodes Incorporated |
Description: IC DEMULTIPLEXER 2LANE 32TQFN Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm (Typ) -3db Bandwidth: 4.7GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
Produkt ist nicht verfügbar |
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PI3VDP3212ZLE+DAX | Diodes Incorporated |
Description: IC DEMULTIPLEXER 2LANE 32TQFN Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Video On-State Resistance (Max): 10Ohm (Typ) -3db Bandwidth: 4.7GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 1 |
Produkt ist nicht verfügbar |
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AP7387-36FDC-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&R Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 3.6V Control Features: Current Limit Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7387-36FDCR-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&R Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 3.6V Control Features: Current Limit Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7387-30FDC-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&R Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 3V Control Features: Current Limit Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit |
auf Bestellung 26987 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7387-33FDCR-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&R Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 230416 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7387-33FDC-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&R Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 94909 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C33Q-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 3K Packaging: Tape & Reel (TR) Tolerance: ±6.06% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C33Q-7-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 3K Packaging: Cut Tape (CT) Tolerance: ±6.06% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX84C33Q-13-F | Diodes Incorporated |
Description: ZENER DIODE SOT23 T&R 10K Packaging: Tape & Reel (TR) Tolerance: ±6.06% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23-3 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP2280-2FMG-7 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN Packaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: U-DFN2018-6 |
auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP2280-2FMG-7 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 6V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: U-DFN2018-6 |
auf Bestellung 111517 Stücke: Lieferzeit 10-14 Tag (e) |
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B1100-13-F-2477 | Diodes Incorporated |
Description: DIODE Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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ZTX453STZ | Diodes Incorporated |
Description: TRANS NPN 100V 1A E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
auf Bestellung 1993 Stücke: Lieferzeit 10-14 Tag (e) |
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ZTX453STZ | Diodes Incorporated |
Description: TRANS NPN 100V 1A E-LINE Packaging: Tape & Box (TB) Package / Case: E-Line-3, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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B280AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 80V 2A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 7 µA @ 80 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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B280AE-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 80V 2A SMA Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A Current - Reverse Leakage @ Vr: 7 µA @ 80 V |
auf Bestellung 34802 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G08FW4-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN1010-6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1010-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
auf Bestellung 310000 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G08FW4-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN1010-6 Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1010-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
auf Bestellung 310000 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVC1G08Z-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP SOT553 Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
Produkt ist nicht verfügbar |
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74LVC1G08Z-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP SOT553 Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
auf Bestellung 3557 Stücke: Lieferzeit 10-14 Tag (e) |
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DUP1105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 44VC SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 60pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DUP1105SOQ-7 | Diodes Incorporated |
Description: TVS DIODE 24VWM 44VC SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Capacitance @ Frequency: 60pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H032LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMTH10H032LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2457 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2451UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006- Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2451UFB4Q-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006- Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 98035 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H032LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H032LPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V |
auf Bestellung 12060 Stücke: Lieferzeit 10-14 Tag (e) |
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DML3008LFDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V V-DFN2020- Packaging: Tape & Reel (TR) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-PowerVFDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 7.5mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN2020-8 (Type N) Fault Protection: Over Temperature Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 288000 Stücke: Lieferzeit 10-14 Tag (e) |
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DML3008LFDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V V-DFN2020- Packaging: Cut Tape (CT) Features: Load Discharge, Power Good, Slew Rate Controlled Package / Case: 8-PowerVFDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 7.5mOhm Input Type: Non-Inverting Voltage - Load: 0.5V ~ 20V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN2020-8 (Type N) Fault Protection: Over Temperature Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 290639 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2451UFB4Q-7R | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006- Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN2451UFB4-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN1006- Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V |
auf Bestellung 480000 Stücke: Lieferzeit 10-14 Tag (e) |
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DML1012LDS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8 Packaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) |
Produkt ist nicht verfügbar |
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DML1012LDS-7A | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8 Packaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) |
Produkt ist nicht verfügbar |
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DML10M8LDS-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8 Packaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 8-PowerVDFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 8mOhm (Max) Input Type: Non-Inverting Voltage - Load: 0.8V ~ 4V Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V Current - Output (Max): 6A Ratio - Input:Output: 1:1 Supplier Device Package: V-DFN3030-8 (Type R) |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH10H032SPSW-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V PowerDI50 Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V |
Produkt ist nicht verfügbar |
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DMTH10H032SPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V PowerDI50 Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 27498 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT8008LSS-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V-100V SO-8 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V |
Produkt ist nicht verfügbar |
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KBP4T10 | Diodes Incorporated |
Description: Medium/High Power Bridge KBP TUB Packaging: Bulk Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
AP1084D15L-13 |
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.5V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 1.5V
Voltage Dropout (Max): 1.4V @ 5A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.5V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 1.5V
Voltage Dropout (Max): 1.4V @ 5A
Protection Features: Over Current, Over Temperature
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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2500+ | 0.81 EUR |
AP1084D18L-13 |
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 1.8V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 1.8V
Voltage Dropout (Max): 1.4V @ 5A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 5A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 1.8V
Voltage Dropout (Max): 1.4V @ 5A
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
74LVC1G07Z-7 |
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR O/D SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: SOT-553
Description: IC BUFF/DVR O/D SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: SOT-553
Produkt ist nicht verfügbar
74LVC1G07Z-7 |
Hersteller: Diodes Incorporated
Description: IC BUFF/DVR O/D SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: SOT-553
Description: IC BUFF/DVR O/D SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: SOT-553
auf Bestellung 3488 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
38+ | 0.47 EUR |
42+ | 0.42 EUR |
100+ | 0.29 EUR |
250+ | 0.24 EUR |
500+ | 0.2 EUR |
1000+ | 0.15 EUR |
74LVC1G07FX4-7 |
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1409-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1409-6
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
31+ | 0.57 EUR |
34+ | 0.52 EUR |
100+ | 0.39 EUR |
250+ | 0.35 EUR |
500+ | 0.29 EUR |
1000+ | 0.22 EUR |
2500+ | 0.2 EUR |
74LVC1G07FW5-7 |
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X1-DFN1010-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X1-DFN1010-6
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.15 EUR |
10000+ | 0.14 EUR |
25000+ | 0.13 EUR |
50000+ | 0.11 EUR |
74LVC1G07FW5-7 |
Hersteller: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X1-DFN1010-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X1-DFN1010-6
auf Bestellung 183937 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
34+ | 0.53 EUR |
37+ | 0.48 EUR |
100+ | 0.33 EUR |
250+ | 0.28 EUR |
500+ | 0.23 EUR |
1000+ | 0.17 EUR |
2500+ | 0.16 EUR |
GB2000039 |
Hersteller: Diodes Incorporated
Description: CRYSTAL 20.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 20 MHz
Description: CRYSTAL 20.0000MHZ 20PF
Packaging: Tape & Reel (TR)
Load Capacitance: 20pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 30 Ohms
Frequency: 20 MHz
Produkt ist nicht verfügbar
UF22F6201Z |
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.5V ~ 3.3V
Current - Supply (Max): 50mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.5V ~ 3.3V
Current - Supply (Max): 50mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 5.78 EUR |
UF22F6201Z |
Hersteller: Diodes Incorporated
Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.5V ~ 3.3V
Current - Supply (Max): 50mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
Description: CRYSTAL OSCILLATOR SEAM2520 T&R
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.5V ~ 3.3V
Current - Supply (Max): 50mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 156.25 MHz
Base Resonator: Crystal
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.8 EUR |
10+ | 8.33 EUR |
50+ | 7.87 EUR |
100+ | 7.4 EUR |
500+ | 7.17 EUR |
1000+ | 6.15 EUR |
ADTA114EUAQ-7 |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.055 EUR |
6000+ | 0.051 EUR |
9000+ | 0.042 EUR |
30000+ | 0.041 EUR |
75000+ | 0.037 EUR |
ADTA114EUAQ-7 |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
79+ | 0.22 EUR |
162+ | 0.11 EUR |
500+ | 0.091 EUR |
1000+ | 0.063 EUR |
DDTA114WCA-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.061 EUR |
6000+ | 0.057 EUR |
9000+ | 0.047 EUR |
30000+ | 0.046 EUR |
DDTA114WCA-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
71+ | 0.25 EUR |
145+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.07 EUR |
DDTA114YCA-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
71+ | 0.25 EUR |
145+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.07 EUR |
DDTB123YC-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1236000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.07 EUR |
6000+ | 0.064 EUR |
9000+ | 0.053 EUR |
75000+ | 0.047 EUR |
150000+ | 0.041 EUR |
DDTB123YC-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 1238483 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
63+ | 0.28 EUR |
128+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.08 EUR |
ZXTP2027FQTA |
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 200mA, 4A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: AEC-Q101
Description: PWR LOW SAT TRANSISTOR SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 200mA, 4A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.6 EUR |
6000+ | 0.58 EUR |
9000+ | 0.55 EUR |
PI3VDP3212ZLEX |
Hersteller: Diodes Incorporated
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Produkt ist nicht verfügbar
PI3VDP3212ZLEX |
Hersteller: Diodes Incorporated
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.09 EUR |
10+ | 4.56 EUR |
25+ | 4.31 EUR |
100+ | 3.74 EUR |
250+ | 3.55 EUR |
500+ | 3.18 EUR |
1000+ | 2.68 EUR |
PI3VDP3212ZLE+DA |
Hersteller: Diodes Incorporated
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Produkt ist nicht verfügbar
PI3VDP3212ZLE+DAX |
Hersteller: Diodes Incorporated
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Description: IC DEMULTIPLEXER 2LANE 32TQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm (Typ)
-3db Bandwidth: 4.7GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 1
Produkt ist nicht verfügbar
AP7387-36FDC-7 |
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.6V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.6V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.83 EUR |
25+ | 0.78 EUR |
100+ | 0.64 EUR |
250+ | 0.59 EUR |
500+ | 0.5 EUR |
1000+ | 0.4 EUR |
2500+ | 0.37 EUR |
5000+ | 0.34 EUR |
AP7387-36FDCR-7 |
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.6V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.6V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.83 EUR |
25+ | 0.78 EUR |
100+ | 0.64 EUR |
250+ | 0.59 EUR |
500+ | 0.5 EUR |
1000+ | 0.4 EUR |
2500+ | 0.37 EUR |
5000+ | 0.34 EUR |
AP7387-30FDC-7 |
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3V
Control Features: Current Limit
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 26987 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.83 EUR |
25+ | 0.78 EUR |
100+ | 0.64 EUR |
250+ | 0.59 EUR |
500+ | 0.5 EUR |
1000+ | 0.4 EUR |
2500+ | 0.37 EUR |
5000+ | 0.34 EUR |
AP7387-33FDCR-7 |
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 230416 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
25+ | 0.76 EUR |
100+ | 0.62 EUR |
250+ | 0.58 EUR |
500+ | 0.49 EUR |
1000+ | 0.39 EUR |
3000+ | 0.36 EUR |
6000+ | 0.33 EUR |
AP7387-33FDC-7 |
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 94909 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.93 EUR |
22+ | 0.81 EUR |
25+ | 0.76 EUR |
100+ | 0.62 EUR |
250+ | 0.58 EUR |
500+ | 0.49 EUR |
1000+ | 0.39 EUR |
3000+ | 0.36 EUR |
6000+ | 0.33 EUR |
BZX84C33Q-7-F |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: ZENER DIODE SOT23 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.057 EUR |
6000+ | 0.053 EUR |
9000+ | 0.045 EUR |
30000+ | 0.042 EUR |
BZX84C33Q-7-F |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: ZENER DIODE SOT23 T&R 3K
Packaging: Cut Tape (CT)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
76+ | 0.23 EUR |
141+ | 0.13 EUR |
500+ | 0.098 EUR |
1000+ | 0.068 EUR |
BZX84C33Q-13-F |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
Description: ZENER DIODE SOT23 T&R 10K
Packaging: Tape & Reel (TR)
Tolerance: ±6.06%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 23.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.045 EUR |
30000+ | 0.042 EUR |
50000+ | 0.036 EUR |
AP2280-2FMG-7 |
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
auf Bestellung 108000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.43 EUR |
6000+ | 0.4 EUR |
15000+ | 0.38 EUR |
30000+ | 0.37 EUR |
AP2280-2FMG-7 |
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
Description: IC PWR SWITCH P-CHANNEL 1:1 6DFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: U-DFN2018-6
auf Bestellung 111517 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.11 EUR |
19+ | 0.97 EUR |
25+ | 0.91 EUR |
100+ | 0.74 EUR |
250+ | 0.69 EUR |
500+ | 0.59 EUR |
1000+ | 0.47 EUR |
B1100-13-F-2477 |
Hersteller: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
ZTX453STZ |
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 1A E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 1993 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
21+ | 0.87 EUR |
100+ | 0.61 EUR |
500+ | 0.51 EUR |
1000+ | 0.43 EUR |
ZTX453STZ |
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Produkt ist nicht verfügbar
B280AE-13 |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.14 EUR |
10000+ | 0.13 EUR |
25000+ | 0.12 EUR |
B280AE-13 |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
Description: DIODE SCHOTTKY 80V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 7 µA @ 80 V
auf Bestellung 34802 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
38+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
74LVC1G08FW4-7 |
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
auf Bestellung 310000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.18 EUR |
10000+ | 0.17 EUR |
25000+ | 0.16 EUR |
50000+ | 0.15 EUR |
74LVC1G08FW4-7 |
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP DFN1010-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
auf Bestellung 310000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
32+ | 0.55 EUR |
35+ | 0.51 EUR |
100+ | 0.38 EUR |
250+ | 0.34 EUR |
500+ | 0.28 EUR |
1000+ | 0.21 EUR |
2500+ | 0.19 EUR |
74LVC1G08Z-7 |
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Produkt ist nicht verfügbar
74LVC1G08Z-7 |
Hersteller: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE AND 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
auf Bestellung 3557 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.51 EUR |
39+ | 0.46 EUR |
100+ | 0.32 EUR |
250+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
DUP1105SOQ-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
9000+ | 0.13 EUR |
DUP1105SOQ-7 |
Hersteller: Diodes Incorporated
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 44VC SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.7 EUR |
36+ | 0.49 EUR |
100+ | 0.25 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
DMTH10H032LPSWQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMTH10H032LPSWQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2457 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.07 EUR |
20+ | 0.92 EUR |
100+ | 0.64 EUR |
500+ | 0.53 EUR |
1000+ | 0.45 EUR |
DMN2451UFB4Q-7B |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.056 EUR |
30000+ | 0.055 EUR |
50000+ | 0.049 EUR |
DMN2451UFB4Q-7B |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 98035 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.44 EUR |
60+ | 0.3 EUR |
122+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.084 EUR |
2000+ | 0.073 EUR |
5000+ | 0.067 EUR |
DMTH10H032LPSW-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.36 EUR |
5000+ | 0.34 EUR |
DMTH10H032LPSW-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
auf Bestellung 12060 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.82 EUR |
100+ | 0.57 EUR |
500+ | 0.48 EUR |
1000+ | 0.4 EUR |
DML3008LFDS-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Tape & Reel (TR)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 288000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.14 EUR |
6000+ | 1.1 EUR |
15000+ | 1.05 EUR |
DML3008LFDS-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET BVDSS: 25V~30V V-DFN2020-
Packaging: Cut Tape (CT)
Features: Load Discharge, Power Good, Slew Rate Controlled
Package / Case: 8-PowerVFDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 7.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.5V ~ 20V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN2020-8 (Type N)
Fault Protection: Over Temperature
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 290639 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.48 EUR |
10+ | 2.23 EUR |
25+ | 2.11 EUR |
100+ | 1.79 EUR |
250+ | 1.69 EUR |
500+ | 1.47 EUR |
1000+ | 1.22 EUR |
DMN2451UFB4Q-7R |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMN2451UFB4-7B |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
auf Bestellung 480000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.082 EUR |
30000+ | 0.08 EUR |
50000+ | 0.072 EUR |
100000+ | 0.064 EUR |
250000+ | 0.062 EUR |
DML1012LDS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Produkt ist nicht verfügbar
DML1012LDS-7A |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Produkt ist nicht verfügbar
DML10M8LDS-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
Description: MOSFET BVDSS: 8V~24V V-DFN3030-8
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 8-PowerVDFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 0.8V ~ 4V
Voltage - Supply (Vcc/Vdd): 3.2V ~ 5.5V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: V-DFN3030-8 (Type R)
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.37 EUR |
6000+ | 0.35 EUR |
15000+ | 0.33 EUR |
30000+ | 0.32 EUR |
DMTH10H032SPSW-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Produkt ist nicht verfügbar
DMTH10H032SPSWQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V PowerDI50
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 27498 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.18 EUR |
18+ | 1.03 EUR |
100+ | 0.71 EUR |
500+ | 0.59 EUR |
1000+ | 0.51 EUR |
2500+ | 0.45 EUR |
5000+ | 0.43 EUR |
10000+ | 0.4 EUR |
DMT8008LSS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Description: MOSFET BVDSS: 61V-100V SO-8
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 40 V
Produkt ist nicht verfügbar
KBP4T10 |
Hersteller: Diodes Incorporated
Description: Medium/High Power Bridge KBP TUB
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: Medium/High Power Bridge KBP TUB
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar