Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75523) > Seite 548 nach 1259

Wählen Sie Seite:   [  << Vorherige Seite ]  1 125 250 375 500 543 544 545 546 547 548 549 550 551 552 553 625 750 875 1000 1125 1250 1259  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
MBR2060CT_HF Diodes Incorporated MBR2060CT_LS.pdf Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
AP64100SP-EVM Diodes Incorporated Description: EVAL BOARD FOR AP64100
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
AP64102QSP-EVM Diodes Incorporated Description: EVAL BOARD FOR AP64102Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64102Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
PT7C4363BZEEX PT7C4363BZEEX Diodes Incorporated PT7C4363B.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.11 EUR
6000+ 1.05 EUR
Mindestbestellmenge: 3000
PT7C4363BZEEX PT7C4363BZEEX Diodes Incorporated PT7C4363B.pdf Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+ 2.34 EUR
25+ 2.22 EUR
100+ 1.82 EUR
250+ 1.7 EUR
500+ 1.5 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 7
AP62200WU-7-52 Diodes Incorporated AP62200_AP62201_AP62200T.pdf Description: DCDC Conv HV Buck TSOT26(STD) T&
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 740kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: TSOT-26
Synchronous Rectifier: Yes
Voltage - Output (Max): 7V
Voltage - Input (Min): 4.2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
SD24CQ-7 SD24CQ-7 Diodes Incorporated SD24CQ.pdf Description: General Protection PP SOD323 T&R
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 315W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
DFLZ3V3-7 Diodes Incorporated Description: DIODE ZENER 1W POWERDI123
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
SBRT3M30LP-7 SBRT3M30LP-7 Diodes Incorporated SBRT3M30LP.pdf Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 3000
SBRT3M30LP-7 SBRT3M30LP-7 Diodes Incorporated SBRT3M30LP.pdf Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 137616 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
DLLFSD01LPH4-7B DLLFSD01LPH4-7B Diodes Incorporated DLLFSD01LPH4.pdf Description: DIODE GEN PURP 80V 100MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 310000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.067 EUR
30000+ 0.063 EUR
50000+ 0.059 EUR
100000+ 0.052 EUR
250000+ 0.051 EUR
Mindestbestellmenge: 10000
DLLFSD01LPH4-7B DLLFSD01LPH4-7B Diodes Incorporated DLLFSD01LPH4.pdf Description: DIODE GEN PURP 80V 100MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 320589 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
42+ 0.42 EUR
50+ 0.35 EUR
100+ 0.22 EUR
250+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2500+ 0.09 EUR
5000+ 0.079 EUR
Mindestbestellmenge: 35
LM2903QM8-13 LM2903QM8-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.2 EUR
5000+ 0.18 EUR
12500+ 0.17 EUR
25000+ 0.16 EUR
Mindestbestellmenge: 2500
LM2903QM8-13 LM2903QM8-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 57149 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
32+ 0.56 EUR
35+ 0.51 EUR
100+ 0.38 EUR
250+ 0.34 EUR
500+ 0.29 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 26
DMN10H220L-13 DMN10H220L-13 Diodes Incorporated DMN10H220L.pdf Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
PI6C5921512ZDIEX PI6C5921512ZDIEX Diodes Incorporated PI6C5921512.pdf Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
Produkt ist nicht verfügbar
PI6C5921512ZDIEX PI6C5921512ZDIEX Diodes Incorporated PI6C5921512.pdf Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
auf Bestellung 2568 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.67 EUR
10+ 9.63 EUR
25+ 9.19 EUR
100+ 7.98 EUR
250+ 7.62 EUR
500+ 6.95 EUR
1000+ 6.05 EUR
Mindestbestellmenge: 2
ZXMN2F34FHTA ZXMN2F34FHTA Diodes Incorporated ZXMN2F34FH.pdf Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
auf Bestellung 112155 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 24
DMG3414UQ-7 DMG3414UQ-7 Diodes Incorporated DMG3414UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMG3414UQ-7 DMG3414UQ-7 Diodes Incorporated DMG3414UQ.pdf Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
33+ 0.54 EUR
100+ 0.33 EUR
500+ 0.3 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
DMT10H015LCG-7 DMT10H015LCG-7 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.64 EUR
6000+ 0.6 EUR
10000+ 0.58 EUR
Mindestbestellmenge: 2000
DMT10H015LCG-7 DMT10H015LCG-7 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 13576 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
15+ 1.26 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 12
DMT10H009SPS-13 DMT10H009SPS-13 Diodes Incorporated DMT10H009SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 203988 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.62 EUR
5000+ 0.59 EUR
12500+ 0.56 EUR
Mindestbestellmenge: 2500
DMT10H009SPS-13 DMT10H009SPS-13 Diodes Incorporated DMT10H009SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 204349 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
15+ 1.22 EUR
100+ 0.95 EUR
500+ 0.8 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
DMT10H009LCG-7 DMT10H009LCG-7 Diodes Incorporated DMT10H009LCG.pdf Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009LCG-7 DMT10H009LCG-7 Diodes Incorporated DMT10H009LCG.pdf Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 2311 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
DMT10H014LSS-13 DMT10H014LSS-13 Diodes Incorporated DMT10H014LSS.pdf Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.8 EUR
5000+ 0.76 EUR
12500+ 0.73 EUR
Mindestbestellmenge: 2500
DMT10H014LSS-13 DMT10H014LSS-13 Diodes Incorporated DMT10H014LSS.pdf Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 113245 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
DMT10H009LK3-13 DMT10H009LK3-13 Diodes Incorporated DMT10H009LK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1549855 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
12+ 1.55 EUR
100+ 1.2 EUR
500+ 1.02 EUR
1000+ 0.83 EUR
Mindestbestellmenge: 10
DMT10H072LFDF-13 DMT10H072LFDF-13 Diodes Incorporated DMT10H072LFDF.pdf Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H072LFDFQ-13 DMT10H072LFDFQ-13 Diodes Incorporated DMT10H072LFDFQ.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT10H052LFDF-13 DMT10H052LFDF-13 Diodes Incorporated DMT10H052LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H025LSS-13 DMT10H025LSS-13 Diodes Incorporated DMT10H025LSS.pdf Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009SCG-7 DMT10H009SCG-7 Diodes Incorporated DMT10H009SCG.pdf Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H003SPSW-13 Diodes Incorporated DMT10H003SPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032SFVW-7 DMT10H032SFVW-7 Diodes Incorporated DMT10H032SFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.36 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 2000
DMT10H009SK3-13 DMT10H009SK3-13 Diodes Incorporated DMT10H009SK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LSS-13 DMT10H032LSS-13 Diodes Incorporated DMT10H032LSS.pdf Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LFDF-7 DMT10H032LFDF-7 Diodes Incorporated DMT10H032LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LFDF-13 DMT10H032LFDF-13 Diodes Incorporated DMT10H032LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032SFVW-13 DMT10H032SFVW-13 Diodes Incorporated DMT10H032SFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 3000
DMT10H015SPS-13 DMT10H015SPS-13 Diodes Incorporated DMT10H015SPS.pdf Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.6 EUR
5000+ 0.57 EUR
12500+ 0.55 EUR
Mindestbestellmenge: 2500
DMT10H015SK3-13 DMT10H015SK3-13 Diodes Incorporated DMT10H015SK3.pdf Description: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
auf Bestellung 122500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.66 EUR
5000+ 0.63 EUR
12500+ 0.6 EUR
Mindestbestellmenge: 2500
DMT10H032LK3-13 DMT10H032LK3-13 Diodes Incorporated DMT10H032LK3.pdf Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H052LFDF-7 DMT10H052LFDF-7 Diodes Incorporated DMT10H052LFDF.pdf Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H015LCG-13 DMT10H015LCG-13 Diodes Incorporated DMT10H015LCG.pdf Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.64 EUR
6000+ 0.6 EUR
9000+ 0.58 EUR
Mindestbestellmenge: 3000
DMT10H009LFG-7 DMT10H009LFG-7 Diodes Incorporated DMT10H009LFG.pdf Description: MOSFET N-CH 100V 13A/50A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.92 EUR
Mindestbestellmenge: 2000
DMT10H4M5LPS-13 Diodes Incorporated DMT10H4M5LPS.pdf Description: MOSFET BVDSS: 61V-100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.56 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 2500
DMT10H032LDV-13 DMT10H032LDV-13 Diodes Incorporated DMT10H032LDV.pdf Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Part Status: Active
Produkt ist nicht verfügbar
DMT10H032LFVW-13 DMT10H032LFVW-13 Diodes Incorporated DMT10H032LFVW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009SSS-13 Diodes Incorporated DMT10H009SSS.pdf Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.74 EUR
5000+ 0.7 EUR
12500+ 0.67 EUR
Mindestbestellmenge: 2500
DMT10H009LH3 Diodes Incorporated DMT10H009LH3.pdf Description: MOSFET N-CH 100V 84A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Produkt ist nicht verfügbar
AP2210N-3.3TRG1-50 AP2210N-3.3TRG1-50 Diodes Incorporated AP2210.pdf Description: LDO CMOS LowCurr SOT23 T&R 3K
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Produkt ist nicht verfügbar
SMBJ17A-13 SMBJ17A-13 Diodes Incorporated SMBJ5.0%28C%29A%7ESMBJ170%28C%29A.pdf Description: TVS DIODE 17VWM 27.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMBJ17A-13-F SMBJ17A-13-F Diodes Incorporated ds19002.pdf Description: TVS DIODE 17V 27.6V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
DMN10H170SFG-7 DMN10H170SFG-7 Diodes Incorporated DMN10H170SFG.pdf Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.37 EUR
Mindestbestellmenge: 2000
DMN10H170SFG-7 DMN10H170SFG-7 Diodes Incorporated DMN10H170SFG.pdf Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
20+ 0.89 EUR
25+ 0.83 EUR
100+ 0.67 EUR
250+ 0.62 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
AP1186K5-33G-13 AP1186K5-33G-13 Diodes Incorporated AP1186.pdf Description: IC REG LINEAR 3.3V 1.5A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 0.38V @ 1.5A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
Produkt ist nicht verfügbar
GBP310 GBP310 Diodes Incorporated GBP306-GBP310.pdf Description: LOW POWER BRIDGE GBP TUBE 35PCS
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2676 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
35+ 0.77 EUR
105+ 0.56 EUR
525+ 0.47 EUR
1015+ 0.4 EUR
2030+ 0.36 EUR
Mindestbestellmenge: 19
PI6C49X0202WIEX PI6C49X0202WIEX Diodes Incorporated PI6C49X0202.pdf Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.27 EUR
5000+ 2.18 EUR
Mindestbestellmenge: 2500
MBR2060CT_HF MBR2060CT_LS.pdf
Hersteller: Diodes Incorporated
Description: SCHOTTKY RECTIFIER
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Produkt ist nicht verfügbar
AP64100SP-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64100
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64100
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
AP64102QSP-EVM
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP64102Q
Packaging: Box
Voltage - Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V or 12V
Voltage - Input: 3.8V ~ 40V
Current - Output: 1A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: AP64102Q
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
PT7C4363BZEEX PT7C4363B.pdf
PT7C4363BZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.11 EUR
6000+ 1.05 EUR
Mindestbestellmenge: 3000
PT7C4363BZEEX PT7C4363B.pdf
PT7C4363BZEEX
Hersteller: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Features: Alarm, Leap Year, Square Wave Output
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.3V ~ 5.5V
Time Format: HH:MM:SS (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Current - Timekeeping (Max): 0.85µA ~ 0.9µA @ 3V ~ 5V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.6 EUR
10+ 2.34 EUR
25+ 2.22 EUR
100+ 1.82 EUR
250+ 1.7 EUR
500+ 1.5 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 7
AP62200WU-7-52 AP62200_AP62201_AP62200T.pdf
Hersteller: Diodes Incorporated
Description: DCDC Conv HV Buck TSOT26(STD) T&
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 740kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: TSOT-26
Synchronous Rectifier: Yes
Voltage - Output (Max): 7V
Voltage - Input (Min): 4.2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
SD24CQ-7 SD24CQ.pdf
SD24CQ-7
Hersteller: Diodes Incorporated
Description: General Protection PP SOD323 T&R
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 24pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 315W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
DFLZ3V3-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 1W POWERDI123
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
SBRT3M30LP-7 SBRT3M30LP.pdf
SBRT3M30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 3000
SBRT3M30LP-7 SBRT3M30LP.pdf
SBRT3M30LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 30V 3A U-DFN3030-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Super Barrier
Capacitance @ Vr, F: 100pF @ 30V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 137616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
DLLFSD01LPH4-7B DLLFSD01LPH4.pdf
DLLFSD01LPH4-7B
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 100MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 310000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.067 EUR
30000+ 0.063 EUR
50000+ 0.059 EUR
100000+ 0.052 EUR
250000+ 0.051 EUR
Mindestbestellmenge: 10000
DLLFSD01LPH4-7B DLLFSD01LPH4.pdf
DLLFSD01LPH4-7B
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 100MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: X2-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 320589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
42+ 0.42 EUR
50+ 0.35 EUR
100+ 0.22 EUR
250+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2500+ 0.09 EUR
5000+ 0.079 EUR
Mindestbestellmenge: 35
LM2903QM8-13 LM2901Q_03Q.pdf
LM2903QM8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.2 EUR
5000+ 0.18 EUR
12500+ 0.17 EUR
25000+ 0.16 EUR
Mindestbestellmenge: 2500
LM2903QM8-13 LM2901Q_03Q.pdf
LM2903QM8-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 57149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
32+ 0.56 EUR
35+ 0.51 EUR
100+ 0.38 EUR
250+ 0.34 EUR
500+ 0.29 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 26
DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
PI6C5921512ZDIEX PI6C5921512.pdf
PI6C5921512ZDIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
Produkt ist nicht verfügbar
PI6C5921512ZDIEX PI6C5921512.pdf
PI6C5921512ZDIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 2:12 1.5GHZ 40TQFN
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: Differential or Single-Ended
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 40-TQFN (6x6)
Part Status: Active
Frequency - Max: 1.5 GHz
auf Bestellung 2568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.67 EUR
10+ 9.63 EUR
25+ 9.19 EUR
100+ 7.98 EUR
250+ 7.62 EUR
500+ 6.95 EUR
1000+ 6.05 EUR
Mindestbestellmenge: 2
ZXMN2F34FHTA ZXMN2F34FH.pdf
ZXMN2F34FHTA
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 277 pF @ 10 V
auf Bestellung 112155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
29+ 0.61 EUR
100+ 0.42 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 24
DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMG3414UQ-7 DMG3414UQ.pdf
DMG3414UQ-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 780mW
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 829.9 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
33+ 0.54 EUR
100+ 0.33 EUR
500+ 0.3 EUR
1000+ 0.21 EUR
Mindestbestellmenge: 25
DMT10H015LCG-7 DMT10H015LCG.pdf
DMT10H015LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.64 EUR
6000+ 0.6 EUR
10000+ 0.58 EUR
Mindestbestellmenge: 2000
DMT10H015LCG-7 DMT10H015LCG.pdf
DMT10H015LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 13576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
15+ 1.26 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 12
DMT10H009SPS-13 DMT10H009SPS.pdf
DMT10H009SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 203988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.62 EUR
5000+ 0.59 EUR
12500+ 0.56 EUR
Mindestbestellmenge: 2500
DMT10H009SPS-13 DMT10H009SPS.pdf
DMT10H009SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 204349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
15+ 1.22 EUR
100+ 0.95 EUR
500+ 0.8 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
DMT10H009LCG-7 DMT10H009LCG.pdf
DMT10H009LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009LCG-7 DMT10H009LCG.pdf
DMT10H009LCG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12.4A/47A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 2311 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
DMT10H014LSS-13 DMT10H014LSS.pdf
DMT10H014LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.8 EUR
5000+ 0.76 EUR
12500+ 0.73 EUR
Mindestbestellmenge: 2500
DMT10H014LSS-13 DMT10H014LSS.pdf
DMT10H014LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 113245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.94 EUR
12+ 1.58 EUR
100+ 1.23 EUR
500+ 1.04 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 10
DMT10H009LK3-13 DMT10H009LK3.pdf
DMT10H009LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
auf Bestellung 1549855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.88 EUR
12+ 1.55 EUR
100+ 1.2 EUR
500+ 1.02 EUR
1000+ 0.83 EUR
Mindestbestellmenge: 10
DMT10H072LFDF-13 DMT10H072LFDF.pdf
DMT10H072LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H072LFDFQ-13 DMT10H072LFDFQ.pdf
DMT10H072LFDFQ-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMT10H052LFDF-13 DMT10H052LFDF.pdf
DMT10H052LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H025LSS-13 DMT10H025LSS.pdf
DMT10H025LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009SCG-7 DMT10H009SCG.pdf
DMT10H009SCG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V V-DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: V-DFN3333-8 (Type B)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H003SPSW-13 DMT10H003SPSW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032SFVW-7 DMT10H032SFVW.pdf
DMT10H032SFVW-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.36 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 2000
DMT10H009SK3-13 DMT10H009SK3.pdf
DMT10H009SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LSS-13 DMT10H032LSS.pdf
DMT10H032LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SO-8 T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LFDF-7 DMT10H032LFDF.pdf
DMT10H032LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032LFDF-13 DMT10H032LFDF.pdf
DMT10H032LFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H032SFVW-13 DMT10H032SFVW.pdf
DMT10H032SFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 3000
DMT10H015SPS-13 DMT10H015SPS.pdf
DMT10H015SPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.6 EUR
5000+ 0.57 EUR
12500+ 0.55 EUR
Mindestbestellmenge: 2500
DMT10H015SK3-13 DMT10H015SK3.pdf
DMT10H015SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 54A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
auf Bestellung 122500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.66 EUR
5000+ 0.63 EUR
12500+ 0.6 EUR
Mindestbestellmenge: 2500
DMT10H032LK3-13 DMT10H032LK3.pdf
DMT10H032LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V TO252 T&R
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H052LFDF-7 DMT10H052LFDF.pdf
DMT10H052LFDF-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V U-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H015LCG-13 DMT10H015LCG.pdf
DMT10H015LCG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 9.4A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: V-DFN3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.64 EUR
6000+ 0.6 EUR
9000+ 0.58 EUR
Mindestbestellmenge: 3000
DMT10H009LFG-7 DMT10H009LFG.pdf
DMT10H009LFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 13A/50A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.92 EUR
Mindestbestellmenge: 2000
DMT10H4M5LPS-13 DMT10H4M5LPS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.56 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 2500
DMT10H032LDV-13 DMT10H032LDV.pdf
DMT10H032LDV-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXC)
Part Status: Active
Produkt ist nicht verfügbar
DMT10H032LFVW-13 DMT10H032LFVW.pdf
DMT10H032LFVW-13
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Produkt ist nicht verfügbar
DMT10H009SSS-13 DMT10H009SSS.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V-100V SO-8 T&R
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.74 EUR
5000+ 0.7 EUR
12500+ 0.67 EUR
Mindestbestellmenge: 2500
DMT10H009LH3 DMT10H009LH3.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 84A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 50 V
Produkt ist nicht verfügbar
AP2210N-3.3TRG1-50 AP2210.pdf
AP2210N-3.3TRG1-50
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr SOT23 T&R 3K
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Part Status: Active
PSRR: 75dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 15 mA
Produkt ist nicht verfügbar
SMBJ17A-13 SMBJ5.0%28C%29A%7ESMBJ170%28C%29A.pdf
SMBJ17A-13
Hersteller: Diodes Incorporated
Description: TVS DIODE 17VWM 27.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
SMBJ17A-13-F ds19002.pdf
SMBJ17A-13-F
Hersteller: Diodes Incorporated
Description: TVS DIODE 17V 27.6V SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.7A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
9000+ 0.13 EUR
Mindestbestellmenge: 3000
DMN10H170SFG-7 DMN10H170SFG.pdf
DMN10H170SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.37 EUR
Mindestbestellmenge: 2000
DMN10H170SFG-7 DMN10H170SFG.pdf
DMN10H170SFG-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.89 EUR
25+ 0.83 EUR
100+ 0.67 EUR
250+ 0.62 EUR
500+ 0.52 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 17
AP1186K5-33G-13 AP1186.pdf
AP1186K5-33G-13
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1.5A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 0.38V @ 1.5A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 150 µA
Produkt ist nicht verfügbar
GBP310 GBP306-GBP310.pdf
GBP310
Hersteller: Diodes Incorporated
Description: LOW POWER BRIDGE GBP TUBE 35PCS
Packaging: Tube
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBP
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
35+ 0.77 EUR
105+ 0.56 EUR
525+ 0.47 EUR
1015+ 0.4 EUR
2030+ 0.36 EUR
Mindestbestellmenge: 19
PI6C49X0202WIEX PI6C49X0202.pdf
PI6C49X0202WIEX
Hersteller: Diodes Incorporated
Description: IC CLK BUFFER 1:2 250MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
Part Status: Active
Frequency - Max: 250 MHz
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.27 EUR
5000+ 2.18 EUR
Mindestbestellmenge: 2500
Wählen Sie Seite:   [  << Vorherige Seite ]  1 125 250 375 500 543 544 545 546 547 548 549 550 551 552 553 625 750 875 1000 1125 1250 1259  [ Nächste Seite >> ]