Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 539 nach 1259
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MMBT5401Q-7-F | Diodes Incorporated |
Description: TRANS PNP 150V 0.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 999000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401Q-7-F | Diodes Incorporated |
Description: TRANS PNP 150V 0.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 350 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1001246 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP4003GTA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXTP4003GTA | Diodes Incorporated |
Description: TRANS PNP 100V 1A SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
auf Bestellung 40960 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV23CQ-13-F | Diodes Incorporated |
Description: DIODE ARRAY GP 200V 400MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 172980 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV23SQ-13-F | Diodes Incorporated |
Description: DIODE ARRAY GP 200V 400MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 400mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 980000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV23SQ-13-F | Diodes Incorporated |
Description: DIODE ARRAY GP 200V 400MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 400mA (DC) Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 988664 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5316QTA | Diodes Incorporated |
Description: PWR MID PERF TRANSISTOR SOT223 T Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 950 Stücke: Lieferzeit 10-14 Tag (e) |
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AP7387-50FDC-7 | Diodes Incorporated |
Description: LDO CMOS LowCurr U-DFN2020-6 T&R Packaging: Bulk Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 4 µA Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 (Type C) Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Part Status: Active Voltage Dropout (Max): 1.35V @ 150mA Protection Features: Over Current, Over Temperature, Short Circuit |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PT7M3808G15TAEX | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 180ms Minimum Voltage - Threshold: 1.5V Supplier Device Package: SOT-23-6 Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4448WSFQ-7 | Diodes Incorporated |
Description: DIODE GEN PURP 75V 250MA SOD323F Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323F Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 162000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4448WSFQ-7 | Diodes Incorporated |
Description: DIODE GEN PURP 75V 250MA SOD323F Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323F Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 164740 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3003LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 22A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3003LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 22A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7388 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVW-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3009LFVW-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 12A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V |
auf Bestellung 2650 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFV-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFV-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V |
auf Bestellung 11940 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFVQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMT3006LFVQ-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 60A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2687 Stücke: Lieferzeit 10-14 Tag (e) |
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AP63200QWU-7 | Diodes Incorporated |
Description: IC REG BUCK ADJ 2A TSOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 500kHz Voltage - Input (Max): 32V Topology: Buck Supplier Device Package: TSOT-23-6 Synchronous Rectifier: Yes Voltage - Output (Max): 32V Voltage - Input (Min): 3.8V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
auf Bestellung 15052 Stücke: Lieferzeit 10-14 Tag (e) |
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AP63201QWU-7 | Diodes Incorporated |
Description: IC REG BUCK ADJ 2A TSOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 500kHz Voltage - Input (Max): 32V Topology: Buck Supplier Device Package: TSOT-23-6 Synchronous Rectifier: Yes Voltage - Output (Max): 32V Voltage - Input (Min): 3.8V Voltage - Output (Min/Fixed): 0.8V Part Status: Active |
auf Bestellung 198642 Stücke: Lieferzeit 10-14 Tag (e) |
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AP63203QWU-7 | Diodes Incorporated |
Description: IC REG BUCK 3.3V 2A TSOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Frequency - Switching: 1.1MHz Voltage - Input (Max): 32V Topology: Buck Supplier Device Package: TSOT-23-6 Synchronous Rectifier: Yes Voltage - Input (Min): 3.8V Voltage - Output (Min/Fixed): 3.3V Part Status: Active |
auf Bestellung 6790 Stücke: Lieferzeit 10-14 Tag (e) |
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AP1694AEV10 | Diodes Incorporated |
Description: EVAL BOARD FOR AP1694A Packaging: Box Features: Dimmable Voltage - Output: 12V Voltage - Input: 100 ~ 135 VAC Current - Output / Channel: 400mA Utilized IC / Part: AP1694A Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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AP1694AEV11 | Diodes Incorporated |
Description: EVAL BOARD FOR AP1694A Packaging: Box Features: Dimmable Voltage - Output: 12V Voltage - Input: 200 ~ 265 VAC Current - Output / Channel: 400mA Utilized IC / Part: AP1694A Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
Produkt ist nicht verfügbar |
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PI4IOE5V6416RQ2LEX | Diodes Incorporated |
Description: IC XPNDR 400KHZ I2C 24TSSOP Packaging: Tape & Reel (TR) Features: POR Package / Case: 24-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 16 Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 24-TSSOP Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI4IOE5V6416RQ2LEX | Diodes Incorporated |
Description: IC XPNDR 400KHZ I2C 24TSSOP Packaging: Cut Tape (CT) Features: POR Package / Case: 24-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 16 Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 24-TSSOP Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84DWQ-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 50V 0.13A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2885995 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTC114ECAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1545000 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTC114ECAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 310 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1545000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC114EE-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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DDTC114EE-7-F | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-523 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 4890 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTC114EUAQ-13 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6870000 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTC114EUAQ-13 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6879070 Stücke: Lieferzeit 10-14 Tag (e) |
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DPLS160-7 | Diodes Incorporated |
Description: TRANS PNP 60V 1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
auf Bestellung 69000 Stücke: Lieferzeit 10-14 Tag (e) |
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DPLS160-7 | Diodes Incorporated |
Description: TRANS PNP 60V 1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
auf Bestellung 71845 Stücke: Lieferzeit 10-14 Tag (e) |
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S1613A-50.0000(T) | Diodes Incorporated |
Description: OSCILLATOR Packaging: Bulk Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Mounting Type: Surface Mount Output: LVCMOS, LVTTL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -10°C ~ 70°C Frequency Stability: ±25ppm Voltage - Supply: 3.3V Current - Supply (Max): 40mA Height - Seated (Max): 0.071" (1.80mm) Part Status: Last Time Buy Frequency: 50 MHz Base Resonator: Crystal |
Produkt ist nicht verfügbar |
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MMBT3904FZ-7B | Diodes Incorporated |
Description: TRANS NPN 40V 0.2A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 300MHz Supplier Device Package: X2-DFN0606-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 435 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT3904FZ-7B | Diodes Incorporated |
Description: TRANS NPN 40V 0.2A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 300MHz Supplier Device Package: X2-DFN0606-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 435 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 213975 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG7408SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7A POWERDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V |
auf Bestellung 272000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG7408SFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 7A POWERDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V |
auf Bestellung 272574 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5246BQ-7-F | Diodes Incorporated |
Description: ZENER DIODE SOD123 T&R 3K Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 370 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4068000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT3906FA-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.2A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: X2-DFN0806-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 435 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 580000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT3906FA-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.2A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: X2-DFN0806-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 435 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 590496 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT3906FZ-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.2A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 280MHz Supplier Device Package: X2-DFN0606-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 435 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 250000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT3906FZ-7B | Diodes Incorporated |
Description: TRANS PNP 40V 0.2A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 280MHz Supplier Device Package: X2-DFN0606-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 435 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 257401 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT3906Q-7-F | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 310 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT3906Q-7-F | Diodes Incorporated |
Description: GENERAL PURPOSE TRANSISTOR SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 310 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 33665 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV21HWFQ-7 | Diodes Incorporated |
Description: DIODE GP 250V 200MA SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 267000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV21HWFQ-7 | Diodes Incorporated |
Description: DIODE GP 250V 200MA SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 268095 Stücke: Lieferzeit 10-14 Tag (e) |
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PI3USB302-AUWF | Diodes Incorporated |
Description: WAFER USB3 SWITCH 0.18UM CMOS Packaging: Tray Features: Bi-Directional, USB 3.0 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Obsolete Number of Channels: 2 |
Produkt ist nicht verfügbar |
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PAM8302AAYCR | Diodes Incorporated |
Description: IC AMP CLASS D MONO 2.5W 8DFN Packaging: Tape & Reel (TR) Features: Depop, Short-Circuit and Thermal Protection Package / Case: 8-WDFN Exposed Pad Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm Supplier Device Package: 8-DFN (3x3) Part Status: Active |
Produkt ist nicht verfügbar |
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PAM8302AAYCR | Diodes Incorporated |
Description: IC AMP CLASS D MONO 2.5W 8DFN Packaging: Cut Tape (CT) Features: Depop, Short-Circuit and Thermal Protection Package / Case: 8-WDFN Exposed Pad Output Type: 1-Channel (Mono) Mounting Type: Surface Mount Type: Class D Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm Supplier Device Package: 8-DFN (3x3) Part Status: Active |
auf Bestellung 2864 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4424GQTA | Diodes Incorporated |
Description: MOSFET N-CH 240V SOT223 T&R Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN4424GQTA | Diodes Incorporated |
Description: MOSFET N-CH 240V SOT223 T&R Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 18185 Stücke: Lieferzeit 10-14 Tag (e) |
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AP22916DCA4-7 | Diodes Incorporated |
Description: Load Switch X1-WLB0808-4 T&R 3K Packaging: Bulk Features: Slew Rate Controlled Package / Case: 4-XFBGA, WLBGA Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 54mOhm Input Type: Non-Inverting Voltage - Load: 1.3V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: X1-WLB0808-4 Fault Protection: Over Temperature, Reverse Current, UVLO Part Status: Active |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV103-7 | Diodes Incorporated |
Description: DIODE SWITCH 200V 500MW MINIMELF Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 125mA Supplier Device Package: Mini MELF Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
Produkt ist nicht verfügbar |
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DMN2041UVT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.8A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2041UVT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.8A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
auf Bestellung 29083 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH45M5LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 3.5W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT5401Q-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 999000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.051 EUR |
6000+ | 0.048 EUR |
9000+ | 0.041 EUR |
MMBT5401Q-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 150V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1001246 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
85+ | 0.21 EUR |
172+ | 0.1 EUR |
500+ | 0.086 EUR |
1000+ | 0.059 EUR |
ZXTP4003GTA |
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 1A SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.34 EUR |
ZXTP4003GTA |
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 1A SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 200mV
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 40960 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.9 EUR |
100+ | 0.63 EUR |
500+ | 0.52 EUR |
BAV23CQ-13-F |
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 172980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.53 EUR |
50+ | 0.36 EUR |
101+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.1 EUR |
2000+ | 0.088 EUR |
5000+ | 0.082 EUR |
BAV23SQ-13-F |
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 980000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.059 EUR |
BAV23SQ-13-F |
Hersteller: Diodes Incorporated
Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 988664 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
43+ | 0.42 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2000+ | 0.1 EUR |
5000+ | 0.095 EUR |
BCP5316QTA |
Hersteller: Diodes Incorporated
Description: PWR MID PERF TRANSISTOR SOT223 T
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
Description: PWR MID PERF TRANSISTOR SOT223 T
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
31+ | 0.57 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
AP7387-50FDC-7 |
Hersteller: Diodes Incorporated
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: LDO CMOS LowCurr U-DFN2020-6 T&R
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 µA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6 (Type C)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 1.35V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.83 EUR |
25+ | 0.78 EUR |
100+ | 0.64 EUR |
250+ | 0.59 EUR |
500+ | 0.5 EUR |
1000+ | 0.4 EUR |
2500+ | 0.37 EUR |
PT7M3808G15TAEX |
Hersteller: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 180ms Minimum
Voltage - Threshold: 1.5V
Supplier Device Package: SOT-23-6
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 180ms Minimum
Voltage - Threshold: 1.5V
Supplier Device Package: SOT-23-6
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.93 EUR |
1N4448WSFQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 75V 250MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 75V 250MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 162000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.042 EUR |
6000+ | 0.04 EUR |
9000+ | 0.034 EUR |
30000+ | 0.031 EUR |
75000+ | 0.03 EUR |
1N4448WSFQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 75V 250MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 75V 250MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 164740 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 0.33 EUR |
75+ | 0.24 EUR |
138+ | 0.13 EUR |
500+ | 0.1 EUR |
1000+ | 0.07 EUR |
DMT3003LFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.48 EUR |
6000+ | 0.46 EUR |
DMT3003LFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 22A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7388 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 1.27 EUR |
17+ | 1.1 EUR |
100+ | 0.76 EUR |
500+ | 0.63 EUR |
1000+ | 0.54 EUR |
DMT3009LFVW-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.37 EUR |
DMT3009LFVW-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
Description: MOSFET N-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.97 EUR |
22+ | 0.83 EUR |
100+ | 0.58 EUR |
500+ | 0.48 EUR |
1000+ | 0.41 EUR |
DMT3006LFV-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.42 EUR |
6000+ | 0.4 EUR |
9000+ | 0.37 EUR |
DMT3006LFV-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 11940 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
19+ | 0.96 EUR |
100+ | 0.66 EUR |
500+ | 0.55 EUR |
1000+ | 0.47 EUR |
DMT3006LFVQ-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.46 EUR |
DMT3006LFVQ-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 60A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2687 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.2 EUR |
17+ | 1.04 EUR |
100+ | 0.72 EUR |
500+ | 0.6 EUR |
1000+ | 0.51 EUR |
AP63200QWU-7 |
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 15052 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
12+ | 1.56 EUR |
25+ | 1.48 EUR |
100+ | 1.22 EUR |
250+ | 1.14 EUR |
500+ | 1.01 EUR |
1000+ | 0.8 EUR |
AP63201QWU-7 |
Hersteller: Diodes Incorporated
Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Description: IC REG BUCK ADJ 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 32V
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 198642 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.74 EUR |
12+ | 1.55 EUR |
25+ | 1.47 EUR |
100+ | 1.21 EUR |
250+ | 1.13 EUR |
500+ | 1 EUR |
1000+ | 0.79 EUR |
AP63203QWU-7 |
Hersteller: Diodes Incorporated
Description: IC REG BUCK 3.3V 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Description: IC REG BUCK 3.3V 2A TSOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.1MHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: TSOT-23-6
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.8V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
auf Bestellung 6790 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.76 EUR |
12+ | 1.56 EUR |
25+ | 1.48 EUR |
100+ | 1.22 EUR |
250+ | 1.14 EUR |
500+ | 1.01 EUR |
1000+ | 0.8 EUR |
AP1694AEV10 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 100 ~ 135 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 100 ~ 135 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 96.1 EUR |
AP1694AEV11 |
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 200 ~ 265 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD FOR AP1694A
Packaging: Box
Features: Dimmable
Voltage - Output: 12V
Voltage - Input: 200 ~ 265 VAC
Current - Output / Channel: 400mA
Utilized IC / Part: AP1694A
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Produkt ist nicht verfügbar
PI4IOE5V6416RQ2LEX |
Hersteller: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.66 EUR |
6000+ | 1.6 EUR |
PI4IOE5V6416RQ2LEX |
Hersteller: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC XPNDR 400KHZ I2C 24TSSOP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.63 EUR |
10+ | 3.26 EUR |
25+ | 3.08 EUR |
100+ | 2.62 EUR |
250+ | 2.46 EUR |
500+ | 2.15 EUR |
1000+ | 1.79 EUR |
BSS84DWQ-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 50V 0.13A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2885995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
36+ | 0.49 EUR |
100+ | 0.3 EUR |
500+ | 0.27 EUR |
1000+ | 0.19 EUR |
ADTC114ECAQ-7 |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1545000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.081 EUR |
6000+ | 0.075 EUR |
9000+ | 0.062 EUR |
30000+ | 0.061 EUR |
75000+ | 0.055 EUR |
150000+ | 0.048 EUR |
ADTC114ECAQ-7 |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 310 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1545000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 0.48 EUR |
54+ | 0.33 EUR |
110+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.093 EUR |
DDTC114EE-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
DDTC114EE-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 4890 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
45+ | 0.39 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
ADTC114EUAQ-13 |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6870000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.044 EUR |
30000+ | 0.043 EUR |
50000+ | 0.039 EUR |
100000+ | 0.035 EUR |
250000+ | 0.034 EUR |
ADTC114EUAQ-13 |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6879070 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.35 EUR |
76+ | 0.23 EUR |
154+ | 0.11 EUR |
500+ | 0.096 EUR |
1000+ | 0.066 EUR |
2000+ | 0.058 EUR |
5000+ | 0.053 EUR |
DPLS160-7 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
DPLS160-7 |
Hersteller: Diodes Incorporated
Description: TRANS PNP 60V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
auf Bestellung 71845 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
35+ | 0.51 EUR |
100+ | 0.26 EUR |
500+ | 0.23 EUR |
1000+ | 0.18 EUR |
S1613A-50.0000(T) |
Hersteller: Diodes Incorporated
Description: OSCILLATOR
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.071" (1.80mm)
Part Status: Last Time Buy
Frequency: 50 MHz
Base Resonator: Crystal
Description: OSCILLATOR
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -10°C ~ 70°C
Frequency Stability: ±25ppm
Voltage - Supply: 3.3V
Current - Supply (Max): 40mA
Height - Seated (Max): 0.071" (1.80mm)
Part Status: Last Time Buy
Frequency: 50 MHz
Base Resonator: Crystal
Produkt ist nicht verfügbar
MMBT3904FZ-7B |
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.2 EUR |
50000+ | 0.19 EUR |
MMBT3904FZ-7B |
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 0.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 40V 0.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 213975 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
31+ | 0.58 EUR |
100+ | 0.4 EUR |
500+ | 0.31 EUR |
1000+ | 0.25 EUR |
2000+ | 0.23 EUR |
5000+ | 0.22 EUR |
DMG7408SFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
auf Bestellung 272000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.25 EUR |
6000+ | 0.23 EUR |
10000+ | 0.22 EUR |
50000+ | 0.2 EUR |
DMG7408SFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
Description: MOSFET N-CH 30V 7A POWERDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V
auf Bestellung 272574 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
29+ | 0.61 EUR |
100+ | 0.46 EUR |
500+ | 0.36 EUR |
1000+ | 0.28 EUR |
MMSZ5246BQ-7-F |
Hersteller: Diodes Incorporated
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
Description: ZENER DIODE SOD123 T&R 3K
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4068000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.058 EUR |
6000+ | 0.055 EUR |
9000+ | 0.047 EUR |
30000+ | 0.043 EUR |
75000+ | 0.038 EUR |
150000+ | 0.031 EUR |
MMBT3906FA-7B |
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 580000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.15 EUR |
30000+ | 0.14 EUR |
100000+ | 0.13 EUR |
MMBT3906FA-7B |
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 590496 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
36+ | 0.49 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.19 EUR |
2000+ | 0.17 EUR |
5000+ | 0.16 EUR |
MMBT3906FZ-7B |
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.2 EUR |
50000+ | 0.19 EUR |
MMBT3906FZ-7B |
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 280MHz
Supplier Device Package: X2-DFN0606-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 435 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 257401 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
31+ | 0.58 EUR |
100+ | 0.4 EUR |
500+ | 0.31 EUR |
1000+ | 0.25 EUR |
2000+ | 0.23 EUR |
5000+ | 0.22 EUR |
MMBT3906Q-7-F |
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.052 EUR |
6000+ | 0.049 EUR |
9000+ | 0.042 EUR |
30000+ | 0.039 EUR |
MMBT3906Q-7-F |
Hersteller: Diodes Incorporated
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
Description: GENERAL PURPOSE TRANSISTOR SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 310 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33665 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
59+ | 0.3 EUR |
83+ | 0.21 EUR |
154+ | 0.11 EUR |
500+ | 0.09 EUR |
1000+ | 0.063 EUR |
BAV21HWFQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GP 250V 200MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 250V 200MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 267000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
9000+ | 0.086 EUR |
30000+ | 0.085 EUR |
75000+ | 0.07 EUR |
150000+ | 0.069 EUR |
BAV21HWFQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GP 250V 200MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 250V 200MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 268095 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
44+ | 0.4 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
PI3USB302-AUWF |
Hersteller: Diodes Incorporated
Description: WAFER USB3 SWITCH 0.18UM CMOS
Packaging: Tray
Features: Bi-Directional, USB 3.0
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Description: WAFER USB3 SWITCH 0.18UM CMOS
Packaging: Tray
Features: Bi-Directional, USB 3.0
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
PAM8302AAYCR |
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Tape & Reel (TR)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Produkt ist nicht verfügbar
PAM8302AAYCR |
Hersteller: Diodes Incorporated
Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
Description: IC AMP CLASS D MONO 2.5W 8DFN
Packaging: Cut Tape (CT)
Features: Depop, Short-Circuit and Thermal Protection
Package / Case: 8-WDFN Exposed Pad
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Max Output Power x Channels @ Load: 2.5W x 1 @ 4Ohm
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 2864 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
20+ | 0.92 EUR |
25+ | 0.86 EUR |
100+ | 0.7 EUR |
250+ | 0.65 EUR |
500+ | 0.56 EUR |
1000+ | 0.45 EUR |
ZVN4424GQTA |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.6 EUR |
2000+ | 0.53 EUR |
5000+ | 0.51 EUR |
10000+ | 0.47 EUR |
ZVN4424GQTA |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 240V SOT223 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18185 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.39 EUR |
15+ | 1.22 EUR |
100+ | 0.84 EUR |
500+ | 0.7 EUR |
AP22916DCA4-7 |
Hersteller: Diodes Incorporated
Description: Load Switch X1-WLB0808-4 T&R 3K
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 4-XFBGA, WLBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 1.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: X1-WLB0808-4
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
Description: Load Switch X1-WLB0808-4 T&R 3K
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 4-XFBGA, WLBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 1.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: X1-WLB0808-4
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
BAV103-7 |
Hersteller: Diodes Incorporated
Description: DIODE SWITCH 200V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 125mA
Supplier Device Package: Mini MELF
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE SWITCH 200V 500MW MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 125mA
Supplier Device Package: Mini MELF
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
DMN2041UVT-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
6000+ | 0.2 EUR |
9000+ | 0.18 EUR |
DMN2041UVT-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
auf Bestellung 29083 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
30+ | 0.59 EUR |
100+ | 0.35 EUR |
500+ | 0.33 EUR |
1000+ | 0.22 EUR |
DMTH45M5LPSWQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.57 EUR |
5000+ | 0.54 EUR |
12500+ | 0.5 EUR |