Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75521) > Seite 520 nach 1259
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DGD05463M10-13 | Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 10MSOP Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50 V Supplier Device Package: 10-MSOP Rise / Fall Time (Typ): 17ns, 12ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 2.5A DigiKey Programmable: Not Verified |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA113TUA-7-F | Diodes Incorporated | Description: TRANS PREBIAS PNP 200MW SOT323 |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTA113TCA-7-F | Diodes Incorporated | Description: TRANS PREBIAS PNP 200MW SOT23-3 |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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ADTA113ZUAQ-7 | Diodes Incorporated | Description: PREBIAS TRANSISTOR SOT323 T&R 3K |
Produkt ist nicht verfügbar |
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ADTA113ZUAQ-13 | Diodes Incorporated | Description: PREBIAS TRANSISTOR SOT323 |
Produkt ist nicht verfügbar |
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ADTA113ZCAQ-7 | Diodes Incorporated | Description: PREBIAS TRANSISTOR SOT23 T&R 3K |
Produkt ist nicht verfügbar |
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SB860-T | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 8A DO201AD Packaging: Tape & Reel (TR) Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SB860-B | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 8A DO201AD Packaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
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DMP32M6SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V |
auf Bestellung 547500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP32M6SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V |
auf Bestellung 548989 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP32D9UFO-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN0604 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0604-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V |
auf Bestellung 400000 Stücke: Lieferzeit 10-14 Tag (e) |
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PI2MEQX2505 | Diodes Incorporated |
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5 Packaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Delay Time: 1ns Number of Channels: 5 Mounting Type: Surface Mount Output: Differential Type: Buffer, ReDriver Input: Differential Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.62V ~ 1.98V Applications: I2C Data Rate (Max): 2.5Gbps Supplier Device Package: 28-TQFN (3.5x5.5) Signal Conditioning: Input Equalization, Output Pre-Emphasis Part Status: Active |
Produkt ist nicht verfügbar |
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PI2MEQX2505 | Diodes Incorporated |
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5 Packaging: Cut Tape (CT) Package / Case: 28-VFQFN Exposed Pad Delay Time: 1ns Number of Channels: 5 Mounting Type: Surface Mount Output: Differential Type: Buffer, ReDriver Input: Differential Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.62V ~ 1.98V Applications: I2C Data Rate (Max): 2.5Gbps Supplier Device Package: 28-TQFN (3.5x5.5) Signal Conditioning: Input Equalization, Output Pre-Emphasis Part Status: Active |
auf Bestellung 3448 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP31D7LT-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP31D7LFBQ-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X1-DFN1006 Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
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DMP31D7L-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP31D7LT-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT523 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP31D7LFB-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X1-DFN1006 Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 810mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP31D7L-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT23 T&R Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V |
auf Bestellung 738000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP31D7LDWQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V SOT363 T&R Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-363 |
Produkt ist nicht verfügbar |
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DMP31D7LDWQ-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 0.55A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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FES1GE | Diodes Incorporated |
Description: DIODE GEN PURP 400V 1A F1A Packaging: Tape & Reel (TR) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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FES1GE | Diodes Incorporated |
Description: DIODE GEN PURP 400V 1A F1A Packaging: Cut Tape (CT) Package / Case: DO-219AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 2333 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2BA-13-F | Diodes Incorporated |
Description: DIODE GEN PURP 100V 2A SMA Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 531533 Stücke: Lieferzeit 10-14 Tag (e) |
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AP9101CAK6-BJTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BCTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
Produkt ist nicht verfügbar |
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AP9101CAK6-COTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BFTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
Produkt ist nicht verfügbar |
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AP9101CAK6-BYTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BGTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CLTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BTTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage Part Status: Active |
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AP9101CAK6-CATRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BNTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BLTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CBTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BKTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CITRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CNTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BITRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BOTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BXTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CMTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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AP9101CAK6-BPTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CJTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BQTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CFTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BETRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
Produkt ist nicht verfügbar |
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AP9101CAK6-BWTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-CHTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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AP9101CAK6-BUTRG1 | Diodes Incorporated | Description: IC BATT PROT LI-ION 1CELL SOT26 |
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NX5021D0322.289795 | Diodes Incorporated |
Description: CLOCK SAW OSCILLATOR SEAM5032 Packaging: Tape & Reel (TR) |
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S1MSWFMQ-7 | Diodes Incorporated |
Description: DIODE GEN PURP 1KV 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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S1MSWFMQ-7 | Diodes Incorporated |
Description: DIODE GEN PURP 1KV 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Technology: Standard Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 131033 Stücke: Lieferzeit 10-14 Tag (e) |
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AP43776ZDZ20-13 | Diodes Incorporated |
Description: ACDC DECODER W-QFN4040-20 T&R 3K Packaging: Tape & Reel (TR) Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Applications: Quick Charge Decoder Current - Supply: 3mA Supplier Device Package: W-QFN4040-20 (Type A1) Part Status: Active |
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AP43776ZDZ20-13 | Diodes Incorporated |
Description: ACDC DECODER W-QFN4040-20 T&R 3K Packaging: Cut Tape (CT) Package / Case: 20-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Applications: Quick Charge Decoder Current - Supply: 3mA Supplier Device Package: W-QFN4040-20 (Type A1) Part Status: Active |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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GBJ25L06 | Diodes Incorporated | Description: MEDIUM/HIGH POWER BRIDGE GBJ TUB |
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P6SMAJ18ADFQ-13 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR D-F Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 20.5A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: D-Flat Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SBR2U10LP-13 | Diodes Incorporated | Description: DIODE SBR 10V 2A 3DFN |
Produkt ist nicht verfügbar |
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SBR2U10LP-13 | Diodes Incorporated | Description: DIODE SBR 10V 2A 3DFN |
Produkt ist nicht verfügbar |
DGD05463M10-13 |
Hersteller: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50 V
Supplier Device Package: 10-MSOP
Rise / Fall Time (Typ): 17ns, 12ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.43 EUR |
5000+ | 0.4 EUR |
DDTA113TUA-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT323
Description: TRANS PREBIAS PNP 200MW SOT323
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.074 EUR |
DDTA113TCA-7-F |
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Description: TRANS PREBIAS PNP 200MW SOT23-3
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.066 EUR |
ADTA113ZUAQ-7 |
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT323 T&R 3K
Description: PREBIAS TRANSISTOR SOT323 T&R 3K
Produkt ist nicht verfügbar
ADTA113ZUAQ-13 |
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT323
Description: PREBIAS TRANSISTOR SOT323
Produkt ist nicht verfügbar
ADTA113ZCAQ-7 |
Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT23 T&R 3K
Description: PREBIAS TRANSISTOR SOT23 T&R 3K
Produkt ist nicht verfügbar
SB860-T |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
SB860-B |
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Bulk
Part Status: Obsolete
Description: DIODE SCHOTTKY 60V 8A DO201AD
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
DMP32M6SPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
auf Bestellung 547500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.37 EUR |
5000+ | 1.31 EUR |
12500+ | 1.27 EUR |
DMP32M6SPS-13 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
Description: MOSFET P-CH 30V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8594 pF @ 15 V
auf Bestellung 548989 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.03 EUR |
10+ | 2.52 EUR |
100+ | 2 EUR |
500+ | 1.69 EUR |
1000+ | 1.44 EUR |
DMP32D9UFO-7B |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0604
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0604-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 15 V
auf Bestellung 400000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.059 EUR |
30000+ | 0.058 EUR |
50000+ | 0.052 EUR |
100000+ | 0.046 EUR |
250000+ | 0.045 EUR |
PI2MEQX2505 |
Hersteller: Diodes Incorporated
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
Produkt ist nicht verfügbar
PI2MEQX2505 |
Hersteller: Diodes Incorporated
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
Description: MIPI SWITCH V-QFN3555-28 T&R 3.5
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Delay Time: 1ns
Number of Channels: 5
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: Differential
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 1.98V
Applications: I2C
Data Rate (Max): 2.5Gbps
Supplier Device Package: 28-TQFN (3.5x5.5)
Signal Conditioning: Input Equalization, Output Pre-Emphasis
Part Status: Active
auf Bestellung 3448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.9 EUR |
10+ | 2.61 EUR |
25+ | 2.46 EUR |
100+ | 2.1 EUR |
250+ | 1.97 EUR |
500+ | 1.72 EUR |
1000+ | 1.43 EUR |
DMP31D7LT-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Produkt ist nicht verfügbar
DMP31D7LFBQ-7B |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Produkt ist nicht verfügbar
DMP31D7L-13 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Produkt ist nicht verfügbar
DMP31D7LT-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT523 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Produkt ist nicht verfügbar
DMP31D7LFB-7B |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X1-DFN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 810mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 530mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Produkt ist nicht verfügbar
DMP31D7L-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
auf Bestellung 738000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
6000+ | 0.095 EUR |
9000+ | 0.079 EUR |
30000+ | 0.078 EUR |
75000+ | 0.07 EUR |
150000+ | 0.06 EUR |
DMP31D7LDWQ-7 |
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET BVDSS: 25V~30V SOT363 T&R
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
Produkt ist nicht verfügbar
DMP31D7LDWQ-13 |
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.55A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.55A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.093 EUR |
30000+ | 0.091 EUR |
50000+ | 0.075 EUR |
FES1GE |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 400V 1A F1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A F1A
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
FES1GE |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 400V 1A F1A
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A F1A
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2333 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2000+ | 0.11 EUR |
ES2BA-13-F |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE GEN PURP 100V 2A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 531533 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
29+ | 0.61 EUR |
100+ | 0.36 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
2000+ | 0.21 EUR |
AP9101CAK6-BJTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BCTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
AP9101CAK6-COTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BFTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
AP9101CAK6-BYTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BGTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CLTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BTTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Part Status: Active
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
AP9101CAK6-CATRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BNTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BLTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CBTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BKTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CITRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CNTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BITRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BOTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BXTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CMTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
AP9101CAK6-BPTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CJTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BQTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CFTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BETRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Produkt ist nicht verfügbar
AP9101CAK6-BWTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-CHTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
AP9101CAK6-BUTRG1 |
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Description: IC BATT PROT LI-ION 1CELL SOT26
Produkt ist nicht verfügbar
NX5021D0322.289795 |
Hersteller: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM5032
Packaging: Tape & Reel (TR)
Description: CLOCK SAW OSCILLATOR SEAM5032
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
S1MSWFMQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 126000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.17 EUR |
9000+ | 0.15 EUR |
75000+ | 0.14 EUR |
S1MSWFMQ-7 |
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 131033 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
35+ | 0.51 EUR |
100+ | 0.3 EUR |
500+ | 0.28 EUR |
1000+ | 0.19 EUR |
AP43776ZDZ20-13 |
Hersteller: Diodes Incorporated
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: Quick Charge Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: Quick Charge Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
Produkt ist nicht verfügbar
AP43776ZDZ20-13 |
Hersteller: Diodes Incorporated
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: Quick Charge Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
Description: ACDC DECODER W-QFN4040-20 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Applications: Quick Charge Decoder
Current - Supply: 3mA
Supplier Device Package: W-QFN4040-20 (Type A1)
Part Status: Active
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.54 EUR |
10+ | 3.18 EUR |
25+ | 3 EUR |
100+ | 2.56 EUR |
250+ | 2.4 EUR |
500+ | 2.1 EUR |
1000+ | 1.74 EUR |
GBJ25L06 |
Hersteller: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBJ TUB
Description: MEDIUM/HIGH POWER BRIDGE GBJ TUB
Produkt ist nicht verfügbar
P6SMAJ18ADFQ-13 |
Hersteller: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANSIENT VOLTAGE SUPPRESSOR D-F
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: D-Flat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SBR2U10LP-13 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 2A 3DFN
Description: DIODE SBR 10V 2A 3DFN
Produkt ist nicht verfügbar
SBR2U10LP-13 |
Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 2A 3DFN
Description: DIODE SBR 10V 2A 3DFN
Produkt ist nicht verfügbar