DMP31D7LFB-7B Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V X1-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 810mA (Ta), Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V.