Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (75520) > Seite 140 nach 1259
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ZXMD63C03XTC | Diodes Incorporated |
 Description: MOSFET N/P-CH 30V 8MSOP |
Produkt ist nicht verfügbar |
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ZXMD63N02XTC | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 2.5A 8MSOP |
Produkt ist nicht verfügbar |
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ZXMD63N03XTC | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 2.3A 8MSOP |
Produkt ist nicht verfügbar |
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ZXMD63P02XTC | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-MSOP |
Produkt ist nicht verfügbar |
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ZXMD63P03XTC | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 8MSOP |
Produkt ist nicht verfügbar |
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ZXMD65P02N8TC | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4A 8SOIC |
Produkt ist nicht verfügbar |
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ZXMHC3A01T8TA | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8 Packaging: Tape & Reel (TR) Package / Case: SOT-223-8 Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SM8 Part Status: Active |
auf Bestellung 32000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMHN6A07T8TA | Diodes Incorporated |
Description: MOSFET 4N-CH 60V 1.4A SM8 Packaging: Tape & Reel (TR) Package / Case: SOT-223-8 Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.4A Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SM8 |
Produkt ist nicht verfügbar |
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ZXMN10A07FTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 700MA SOT23-3 |
Produkt ist nicht verfügbar |
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ZXMN10A08DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 100V 1.6A 8SOIC |
Produkt ist nicht verfügbar |
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ZXMN10A08E6TC | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.5A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V |
Produkt ist nicht verfügbar |
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ZXMN10A11GTC | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.7A SOT223 |
Produkt ist nicht verfügbar |
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ZXMN10B08E6TC | Diodes Incorporated |
Description: MOSFET N-CH 100V 1.6A SOT26 |
Produkt ist nicht verfügbar |
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ZXMN2A01E6TC | Diodes Incorporated |
Description: MOSFET N-CH 20V 2.5A SOT23-6 |
Produkt ist nicht verfügbar |
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ZXMN2A01FTC | Diodes Incorporated |
Description: MOSFET N-CH 20V 1.9A SOT23-3 |
Produkt ist nicht verfügbar |
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ZXMN2A02X8TC | Diodes Incorporated |
Description: MOSFET N-CH 20V 6.2A 8-MSOP |
Produkt ist nicht verfügbar |
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ZXMN2A03E6TC | Diodes Incorporated |
Description: MOSFET N-CH 20V 3.7A SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V |
Produkt ist nicht verfügbar |
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ZXMN2A04DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.9A 8SOIC |
Produkt ist nicht verfügbar |
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ZXMN2AM832TA | Diodes Incorporated | Description: MOSFET 2N-CH 20V 2.9A 8MLP |
auf Bestellung 3401 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3A01E6TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.4A SOT23-6 |
Produkt ist nicht verfügbar |
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ZXMN3A01FTC | Diodes Incorporated |
Description: MOSFET N-CH 30V 1.8A SOT23-3 |
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ZXMN3A02X8TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A 8MSOP |
Produkt ist nicht verfügbar |
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ZXMN3A03E6TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 3.7A SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
Produkt ist nicht verfügbar |
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ZXMN3A04DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.5A 8SOIC |
Produkt ist nicht verfügbar |
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ZXMN3A06DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 4.9A 8SOIC |
Produkt ist nicht verfügbar |
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ZXMN3A06N8TA | Diodes Incorporated | Description: MOSFET 2N-CH 30V 8SOIC |
Produkt ist nicht verfügbar |
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ZXMN3AM832TA | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 2.9A 8MLP |
auf Bestellung 3169 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3B01FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 1.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V |
auf Bestellung 537000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3B04N8TC | Diodes Incorporated |
Description: MOSFET N-CH 30V 7.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V |
Produkt ist nicht verfügbar |
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ZXMN3B14FTA | Diodes Incorporated |
Description: MOSFET N-CH 30V 2.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A07FTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V |
Produkt ist nicht verfügbar |
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ZXMN6A08E6TC | Diodes Incorporated |
Description: MOSFET N-CH 60V 2.8A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V |
Produkt ist nicht verfügbar |
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ZXMN6A09DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 4.3A 8SOIC |
Produkt ist nicht verfügbar |
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ZXMN6A11DN8TC | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 2.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
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ZXMN6A11GTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.1A SOT223 |
Produkt ist nicht verfügbar |
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ZXMNS3BM832TA | Diodes Incorporated |
Description: MOSFET N-CH 30V 2A 8-MLP |
Produkt ist nicht verfügbar |
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ZXMP4A16KTC | Diodes Incorporated |
Description: MOSFET P-CH 40V 6.6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP6A18KTC | Diodes Incorporated |
Description: MOSFET P-CH 60V 6.8A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V Power Dissipation (Max): 2.15W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V |
auf Bestellung 152500 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXRE1004CFTC | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V SOT23 |
Produkt ist nicht verfügbar |
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ZXRE1004DFTC | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V SOT23 |
Produkt ist nicht verfügbar |
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,TO-226_straightlead.jpg "ZXRE1004DRSTOA") |
ZXRE1004DRSTOA | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
Produkt ist nicht verfügbar |
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ZXRE1004DRSTOB | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
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ZXRE1004DRSTZ | Diodes Incorporated |
Description: IC VREF SHUNT 1% E-LINE |
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ZXRE1004EFTC | Diodes Incorporated |
Description: IC VREF SHUNT 2% SOT23 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
Produkt ist nicht verfügbar |
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ZXRE1004ER | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
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ZXRE1004ERSTOA | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
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ZXRE1004ERSTOB | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
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ZXRE1004ERSTZ | Diodes Incorporated |
Description: IC VREF SHUNT 2% E-LINE |
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ZXRE1004FFTC | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V SOT23 |
Produkt ist nicht verfügbar |
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ZXRE1004FR | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
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ZXRE1004FRSTOA | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
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ZXRE1004FRSTOB | Diodes Incorporated |
Description: IC VREF SHUNT 1.22V TO92-3 |
Produkt ist nicht verfügbar |
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ZXRE1004FRSTZ | Diodes Incorporated |
Description: IC VREF SHUNT 3% E-LINE |
Produkt ist nicht verfügbar |
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ZXRE125CFTC | Diodes Incorporated |
Description: IC VREF SHUNT 0.5% SOT23 Packaging: Tape & Reel (TR) Tolerance: ±0.5% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
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ZXRE125DFTC | Diodes Incorporated |
Description: IC VREF SHUNT 1% SOT23 Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
Produkt ist nicht verfügbar |
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,TO-226_straightlead.jpg "ZXRE125DRSTOA") |
ZXRE125DRSTOA | Diodes Incorporated |
Description: IC VREF SHUNT 1% E-LINE Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: E-Line-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: E-Line (TO-92 compatible) Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
Produkt ist nicht verfügbar |
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ZXRE125DRSTOB | Diodes Incorporated |
Description: IC VREF SHUNT 1% E-LINE Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: E-Line-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: E-Line (TO-92 compatible) Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
Produkt ist nicht verfügbar |
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ZXRE125DRSTZ | Diodes Incorporated |
Description: IC VREF SHUNT 1% E-LINE Packaging: Tape & Box (TB) Tolerance: ±1% Package / Case: E-Line-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: E-Line (TO-92 compatible) Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
Produkt ist nicht verfügbar |
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ZXRE125EFTC | Diodes Incorporated |
Description: IC VREF SHUNT 2% SOT23 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
Produkt ist nicht verfügbar |
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ZXRE125ERSTOA | Diodes Incorporated |
Description: IC VREF SHUNT 2% E-LINE Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: E-Line-3 Temperature Coefficient: 75ppm/°C Output Type: Fixed Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: E-Line (TO-92 compatible) Voltage - Output (Min/Fixed): 1.22V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 8 µA Current - Output: 20 mA |
Produkt ist nicht verfügbar |
| ZXMD63C03XTC |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8MSOP
Description: MOSFET N/P-CH 30V 8MSOP
Produkt ist nicht verfügbar
| ZXMD63N02XTC |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.5A 8MSOP
Description: MOSFET 2N-CH 20V 2.5A 8MSOP
Produkt ist nicht verfügbar
| ZXMD63N03XTC |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 2.3A 8MSOP
Description: MOSFET 2N-CH 30V 2.3A 8MSOP
Produkt ist nicht verfügbar
| ZXMD63P02XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Description: MOSFET 2P-CH 20V 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-MSOP
Produkt ist nicht verfügbar
| ZXMD63P03XTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 8MSOP
Description: MOSFET 2P-CH 30V 8MSOP
Produkt ist nicht verfügbar
| ZXMD65P02N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4A 8SOIC
Description: MOSFET 2P-CH 20V 4A 8SOIC
Produkt ist nicht verfügbar
| ZXMHC3A01T8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Part Status: Active
Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.3 EUR |
| 2000+ | 1.24 EUR |
| 5000+ | 1.19 EUR |
| 10000+ | 1.18 EUR |
| ZXMHN6A07T8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 4N-CH 60V 1.4A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Description: MOSFET 4N-CH 60V 1.4A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SM8
Produkt ist nicht verfügbar
| ZXMN10A07FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 700MA SOT23-3
Description: MOSFET N-CH 100V 700MA SOT23-3
Produkt ist nicht verfügbar
| ZXMN10A08DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 1.6A 8SOIC
Description: MOSFET 2N-CH 100V 1.6A 8SOIC
Produkt ist nicht verfügbar
| ZXMN10A08E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Description: MOSFET N-CH 100V 1.5A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
Produkt ist nicht verfügbar
| ZXMN10A11GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.7A SOT223
Description: MOSFET N-CH 100V 1.7A SOT223
Produkt ist nicht verfügbar
| ZXMN10B08E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 1.6A SOT26
Description: MOSFET N-CH 100V 1.6A SOT26
Produkt ist nicht verfügbar
| ZXMN2A01E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 2.5A SOT23-6
Description: MOSFET N-CH 20V 2.5A SOT23-6
Produkt ist nicht verfügbar
| ZXMN2A01FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 1.9A SOT23-3
Description: MOSFET N-CH 20V 1.9A SOT23-3
Produkt ist nicht verfügbar
| ZXMN2A02X8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Description: MOSFET N-CH 20V 6.2A 8-MSOP
Produkt ist nicht verfügbar
| ZXMN2A03E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Description: MOSFET N-CH 20V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 837 pF @ 10 V
Produkt ist nicht verfügbar
| ZXMN2A04DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SOIC
Description: MOSFET 2N-CH 20V 5.9A 8SOIC
Produkt ist nicht verfügbar
| ZXMN2AM832TA |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.9A 8MLP
Description: MOSFET 2N-CH 20V 2.9A 8MLP
auf Bestellung 3401 Stücke:
Lieferzeit 10-14 Tag (e)| ZXMN3A01E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.4A SOT23-6
Description: MOSFET N-CH 30V 2.4A SOT23-6
Produkt ist nicht verfügbar
| ZXMN3A01FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.8A SOT23-3
Description: MOSFET N-CH 30V 1.8A SOT23-3
Produkt ist nicht verfügbar
| ZXMN3A02X8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A 8MSOP
Description: MOSFET N-CH 30V 5.3A 8MSOP
Produkt ist nicht verfügbar
| ZXMN3A03E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 30V 3.7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
| ZXMN3A04DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SOIC
Description: MOSFET 2N-CH 30V 6.5A 8SOIC
Produkt ist nicht verfügbar
| ZXMN3A06DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8SOIC
Description: MOSFET 2N-CH 30V 4.9A 8SOIC
Produkt ist nicht verfügbar
| ZXMN3A06N8TA |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 8SOIC
Description: MOSFET 2N-CH 30V 8SOIC
Produkt ist nicht verfügbar
| ZXMN3AM832TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 2.9A 8MLP
Description: MOSFET 2N-CH 30V 2.9A 8MLP
auf Bestellung 3169 Stücke:
Lieferzeit 10-14 Tag (e)| ZXMN3B01FTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
Description: MOSFET N-CH 30V 1.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
auf Bestellung 537000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
| ZXMN3B04N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
Produkt ist nicht verfügbar
| ZXMN3B14FTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.1A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 15 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.36 EUR |
| 9000+ | 0.33 EUR |
| ZXMN6A07FTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Description: MOSFET N-CH 60V 1.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 40 V
Produkt ist nicht verfügbar
| ZXMN6A08E6TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Produkt ist nicht verfügbar
| ZXMN6A09DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 4.3A 8SOIC
Description: MOSFET 2N-CH 60V 4.3A 8SOIC
Produkt ist nicht verfügbar
| ZXMN6A11DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 60V 2.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
| ZXMN6A11GTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3.1A SOT223
Description: MOSFET N-CH 60V 3.1A SOT223
Produkt ist nicht verfügbar
| ZXMNS3BM832TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2A 8-MLP
Description: MOSFET N-CH 30V 2A 8-MLP
Produkt ist nicht verfügbar
| ZXMP4A16KTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V 6.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V
Description: MOSFET P-CH 40V 6.6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 20 V
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.77 EUR |
| ZXMP6A18KTC |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
Description: MOSFET P-CH 60V 6.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
auf Bestellung 152500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.72 EUR |
| 12500+ | 0.68 EUR |
| ZXRE1004CFTC |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V SOT23
Description: IC VREF SHUNT 1.22V SOT23
Produkt ist nicht verfügbar
| ZXRE1004DFTC |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V SOT23
Description: IC VREF SHUNT 1.22V SOT23
Produkt ist nicht verfügbar
| ZXRE1004DRSTOA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004DRSTOB |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004DRSTZ |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1% E-LINE
Description: IC VREF SHUNT 1% E-LINE
Produkt ist nicht verfügbar
| ZXRE1004EFTC |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
| ZXRE1004ER |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004ERSTOA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004ERSTOB |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004ERSTZ |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2% E-LINE
Description: IC VREF SHUNT 2% E-LINE
Produkt ist nicht verfügbar
| ZXRE1004FFTC |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V SOT23
Description: IC VREF SHUNT 1.22V SOT23
Produkt ist nicht verfügbar
| ZXRE1004FR |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004FRSTOA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004FRSTOB |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1.22V TO92-3
Description: IC VREF SHUNT 1.22V TO92-3
Produkt ist nicht verfügbar
| ZXRE1004FRSTZ |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 3% E-LINE
Description: IC VREF SHUNT 3% E-LINE
Produkt ist nicht verfügbar
| ZXRE125CFTC |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 0.5% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 0.5% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
| ZXRE125DFTC |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
| ZXRE125DRSTOA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1% E-LINE
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 1% E-LINE
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
| ZXRE125DRSTOB |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1% E-LINE
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 1% E-LINE
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
| ZXRE125DRSTZ |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 1% E-LINE
Packaging: Tape & Box (TB)
Tolerance: ±1%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 1% E-LINE
Packaging: Tape & Box (TB)
Tolerance: ±1%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
| ZXRE125EFTC |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 2% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar
| ZXRE125ERSTOA |
|
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT 2% E-LINE
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Description: IC VREF SHUNT 2% E-LINE
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: E-Line-3
Temperature Coefficient: 75ppm/°C
Output Type: Fixed
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: E-Line (TO-92 compatible)
Voltage - Output (Min/Fixed): 1.22V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 8 µA
Current - Output: 20 mA
Produkt ist nicht verfügbar