ZXMHN6A07T8TA Diodes Incorporated
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Technische Details ZXMHN6A07T8TA Diodes Incorporated
Description: MOSFET 4N-CH 60V 1.4A SM8, Packaging: Tape & Reel (TR), Package / Case: SOT-223-8, Mounting Type: Surface Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 1.4A, Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SM8.
Weitere Produktangebote ZXMHN6A07T8TA
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ZXMHN6A07T8TA | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 60V 1.6A 8-Pin SM8 T/R |
Produkt ist nicht verfügbar |
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ZXMHN6A07T8TA | Hersteller : Diodes Incorporated |
Description: MOSFET 4N-CH 60V 1.4A SM8 Packaging: Tape & Reel (TR) Package / Case: SOT-223-8 Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.4A Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SM8 |
Produkt ist nicht verfügbar |