Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (76369) > Seite 1264 nach 1273
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AP22913W6-7 | DIODES INCORPORATED |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD Supply voltage: 2.7...5.5V DC Kind of package: reel; tape Kind of integrated circuit: high-side; USB switch Mounting: SMD Case: SOT26 Output current: 2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high |
Produkt ist nicht verfügbar |
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| DM1231-02SO-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
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DMN32D2LDF-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353 Mounting: SMD Semiconductor structure: common source Features of semiconductor devices: ESD protected gate Case: SOT353 Power dissipation: 0.28W Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 30V Drain current: 0.4A On-state resistance: 2.2Ω Type of transistor: N-MOSFET x2 |
auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZXMHC10A07T8TA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
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B130LB-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape Mounting: SMD Case: SMB Kind of package: reel; tape Type of diode: Schottky rectifying Capacitance: 90pF Max. off-state voltage: 30V Max. forward voltage: 0.445V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 40A |
auf Bestellung 5489 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT6427-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ8.0A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 110.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2196 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ8.0CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 110.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 0.1mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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SMCJ8.5A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8.5V Breakdown voltage: 9.44...10.4V Max. forward impulse current: 104.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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SMCJ85A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 10.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 2420 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3033LSN-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Power dissipation: 1.4W Case: SC59 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3033LSNQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5A Pulsed drain current: 24A Power dissipation: 1.4W Case: SC59 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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BCW68HTA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.31W Case: SOT23 Current gain: 250...630 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 5180 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTC114TUA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ |
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DDTC114YE-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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DDTC123TCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 2.2kΩ Mounting: SMD Case: SOT23 Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar |
auf Bestellung 3675 Stücke: Lieferzeit 14-21 Tag (e) |
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DDTC123YCA-7-F | DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
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AP7313-12SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT23; SMD Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Manufacturer series: AP7313 Output current: 0.15A Voltage drop: 0.3V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...6V Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.2V |
Produkt ist nicht verfügbar |
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AP7313-15SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 1.5V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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AP7313-20SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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AP7313-25SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.5V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) |
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AP7313-28SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 2.8V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
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AP7313-30SAG-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.3V Output voltage: 3V Output current: 0.15A Case: SOT23 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...6V Manufacturer series: AP7313 |
Produkt ist nicht verfügbar |
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| SBR0240LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 0.25A; X1-DFN1006-2 Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Case: X1-DFN1006-2 Max. forward voltage: 0.59V Max. forward impulse current: 5A Kind of package: reel; tape |
auf Bestellung 2370 Stücke: Lieferzeit 14-21 Tag (e) |
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| SBR02U100LP-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 0.25A; X1-DFN1006-2 Type of diode: Schottky rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 100V Load current: 0.25A Semiconductor structure: single diode Case: X1-DFN1006-2 Max. forward voltage: 0.8V Max. forward impulse current: 5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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DMN2005LPK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3 Case: X1-DFN1006-3 Mounting: SMD On-state resistance: 3.5Ω Kind of package: reel; tape Power dissipation: 0.45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 20V Drain current: 0.44A Type of transistor: N-MOSFET |
auf Bestellung 1150 Stücke: Lieferzeit 14-21 Tag (e) |
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| SD03C-7 | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 3.3V Breakdown voltage: 4V Max. forward impulse current: 55A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protection Capacitance: 150pF |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC1030UFDB-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMC1030UFDBQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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ZXGD3005E6TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOT26; -3.8÷4A; Ch: 1; 25V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOT26 Output current: -3.8...4A Number of channels: 1 Supply voltage: 25V Mounting: SMD Operating temperature: -55...150°C Impulse rise time: 419ns Pulse fall time: 467ns Kind of package: reel; tape Kind of output: non-inverting |
auf Bestellung 2128 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZXGD3009E6TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOT26; -1.38÷1.58A; Ch: 1; 40V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOT26 Output current: -1.38...1.58A Number of channels: 1 Supply voltage: 40V Mounting: SMD Operating temperature: -55...150°C Impulse rise time: 210ns Pulse fall time: 240ns Kind of package: reel; tape Kind of output: non-inverting |
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| ZXGD3104N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8; -7÷2.5A; Ch: 1; 5÷25V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8 Output current: -7...2.5A Number of channels: 1 Supply voltage: 5...25V Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 990ns Pulse fall time: 65ns Kind of package: reel; tape |
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| ZXGD3105N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8; -9÷4A; Ch: 1; 4.5÷25V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8 Output current: -9...4A Number of channels: 1 Supply voltage: 4.5...25V Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 77ns Pulse fall time: 26ns Kind of package: reel; tape |
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| ZXGD3107N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SO8; -9÷4A; Ch: 1; 4.5÷40V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SO8 Output current: -9...4A Number of channels: 1 Supply voltage: 4.5...40V Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 175ns Pulse fall time: 20ns Kind of package: reel; tape |
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| ZXGD3111N7TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO7 Output current: -5...2A Number of channels: 1 Supply voltage: 4...20V Mounting: SMD Operating temperature: -50...150°C Impulse rise time: 695ns Pulse fall time: 131ns Kind of package: reel; tape |
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| ZXGD3112N7TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO7 Output current: -5...2A Number of channels: 1 Supply voltage: 4...20V Mounting: SMD Operating temperature: -50...150°C Impulse rise time: 695ns Pulse fall time: 131ns Kind of package: reel; tape |
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| ZXGD3113W6-7 | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOT26; -3÷1.5A; Ch: 1; 3.5÷40V Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOT26 Output current: -3...1.5A Number of channels: 1 Supply voltage: 3.5...40V Mounting: SMD Operating temperature: -40...150°C Impulse rise time: 360ns Pulse fall time: 210ns Kind of package: reel; tape |
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| ZXGD3114N7TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO7 Output current: -5...2A Number of channels: 1 Supply voltage: 4...20V Mounting: SMD Operating temperature: -50...150°C Impulse rise time: 695ns Pulse fall time: 131ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| AL5810D-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
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| AL5810QD-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
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| AL5810QFJ3-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
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| AL5815W5-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60V Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SOT25 Output current: 15mA Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 4.5...60V Kind of package: reel; tape |
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| AL5816QW5-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
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SMAJ7.5CA-13-F | DIODES INCORPORATED |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 8.33÷9.21V; 31A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
auf Bestellung 1450 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP10H4D2S-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain current: -210mA On-state resistance: 5mΩ Type of transistor: P-MOSFET Power dissipation: 0.44W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Drain-source voltage: -100V |
Produkt ist nicht verfügbar |
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DMP10H4D2S-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Drain current: -210mA On-state resistance: 5Ω Type of transistor: P-MOSFET Power dissipation: 0.38W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: -100V |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3050LVTQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
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DMP2004DMK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW Mounting: SMD Case: SOT26 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.55A On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -1.9A |
Produkt ist nicht verfügbar |
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DMP2004DWK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363 Mounting: SMD Case: SOT363 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
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DMP2004TK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW Mounting: SMD Case: SOT523 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -310mA On-state resistance: 2.4mΩ Type of transistor: P-MOSFET Power dissipation: 0.32W Polarisation: unipolar Gate charge: 970pC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.75A |
Produkt ist nicht verfügbar |
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DMP2004WK-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW Mounting: SMD Case: SOT323 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -400mA On-state resistance: 2mΩ Type of transistor: P-MOSFET Power dissipation: 0.25W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -1.4A |
Produkt ist nicht verfügbar |
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DMP2022LSS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -8A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2022LSSQ-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -7.4A Pulsed drain current: -35A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 60.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMP2170U-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -13A Power dissipation: 1.28W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMP2170U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -13A Power dissipation: 1.28W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP21D0UFB-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.17A Pulsed drain current: -5A Power dissipation: 0.99W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP21D0UFB-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.17A Pulsed drain current: -5A Power dissipation: 0.99W Case: X1-DFN1006-3 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP21D0UFD-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -820mA Pulsed drain current: -4A Power dissipation: 490mW Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMP21D0UT-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -650mA Pulsed drain current: -5A Power dissipation: 0.33W Case: SOT523 Gate-source voltage: ±8V On-state resistance: 960mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP21D2UFA-7B | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -260mA; Idm: -1.5A; 360mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.26A Pulsed drain current: -1.5A Power dissipation: 0.36W Case: X2-DFN0806-3 Gate-source voltage: ±8V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| AP22913W6-7 |
|
Hersteller: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side; USB switch
Mounting: SMD
Case: SOT26
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Produkt ist nicht verfügbar
| DM1231-02SO-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
| DMN32D2LDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Mounting: SMD
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
Case: SOT353
Power dissipation: 0.28W
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 30V
Drain current: 0.4A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353
Mounting: SMD
Semiconductor structure: common source
Features of semiconductor devices: ESD protected gate
Case: SOT353
Power dissipation: 0.28W
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 30V
Drain current: 0.4A
On-state resistance: 2.2Ω
Type of transistor: N-MOSFET x2
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 228+ | 0.31 EUR |
| 264+ | 0.27 EUR |
| 302+ | 0.24 EUR |
| 370+ | 0.19 EUR |
| 438+ | 0.16 EUR |
| 514+ | 0.14 EUR |
| 816+ | 0.088 EUR |
| 864+ | 0.083 EUR |
| ZXMHC10A07T8TA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| B130LB-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; SMB; reel,tape
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Type of diode: Schottky rectifying
Capacitance: 90pF
Max. off-state voltage: 30V
Max. forward voltage: 0.445V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 40A
auf Bestellung 5489 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 570+ | 0.13 EUR |
| 645+ | 0.11 EUR |
| 745+ | 0.096 EUR |
| 785+ | 0.091 EUR |
| MMBT6427-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.29 EUR |
| 355+ | 0.2 EUR |
| 470+ | 0.15 EUR |
| 777+ | 0.092 EUR |
| 1761+ | 0.041 EUR |
| 1866+ | 0.038 EUR |
| SMCJ8.0A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2196 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 281+ | 0.25 EUR |
| 336+ | 0.21 EUR |
| 355+ | 0.2 EUR |
| SMCJ8.0CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 8.89÷9.83V; 110.3A; bidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 110.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.1mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMCJ8.5A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 9.44÷10.4V; 104.2A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.5V
Breakdown voltage: 9.44...10.4V
Max. forward impulse current: 104.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| SMCJ85A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 94.4÷104V; 10.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 10.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 2420 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 325+ | 0.22 EUR |
| 343+ | 0.21 EUR |
| DMN3033LSN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 345+ | 0.2 EUR |
| DMN3033LSNQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; Idm: 24A; 1.4W; SC59
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 1.4W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| BCW68HTA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 310mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.31W
Case: SOT23
Current gain: 250...630
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 247+ | 0.29 EUR |
| 484+ | 0.15 EUR |
| 811+ | 0.088 EUR |
| 857+ | 0.084 EUR |
| 3000+ | 0.08 EUR |
| DDTC114TUA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
| DDTC114YE-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 150mW; SOT523; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
| DDTC123TCA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 2.2kΩ
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; 2.2kΩ
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
auf Bestellung 3675 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1650+ | 0.043 EUR |
| 2550+ | 0.028 EUR |
| 2875+ | 0.025 EUR |
| 3050+ | 0.024 EUR |
| 3225+ | 0.022 EUR |
| DDTC123YCA-7-F |
|
Hersteller: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
| AP7313-12SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT23; SMD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Manufacturer series: AP7313
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.15A; SOT23; SMD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Manufacturer series: AP7313
Output current: 0.15A
Voltage drop: 0.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...6V
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.2V
Produkt ist nicht verfügbar
| AP7313-15SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Produkt ist nicht verfügbar
| AP7313-20SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Produkt ist nicht verfügbar
| AP7313-25SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
auf Bestellung 2970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.24 EUR |
| 455+ | 0.16 EUR |
| 510+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 600+ | 0.12 EUR |
| AP7313-28SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Produkt ist nicht verfügbar
| AP7313-30SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; SOT23; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.3V
Output voltage: 3V
Output current: 0.15A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...6V
Manufacturer series: AP7313
Produkt ist nicht verfügbar
| SBR0240LP-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 0.59V
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 40V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 0.59V
Max. forward impulse current: 5A
Kind of package: reel; tape
auf Bestellung 2370 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 0.22 EUR |
| 365+ | 0.2 EUR |
| 410+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 480+ | 0.15 EUR |
| SBR02U100LP-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 0.8V
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 100V; 0.25A; X1-DFN1006-2
Type of diode: Schottky rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 0.8V
Max. forward impulse current: 5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DMN2005LPK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
On-state resistance: 3.5Ω
Kind of package: reel; tape
Power dissipation: 0.45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 20V
Drain current: 0.44A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3
Case: X1-DFN1006-3
Mounting: SMD
On-state resistance: 3.5Ω
Kind of package: reel; tape
Power dissipation: 0.45W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Drain-source voltage: 20V
Drain current: 0.44A
Type of transistor: N-MOSFET
auf Bestellung 1150 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 447+ | 0.16 EUR |
| 544+ | 0.13 EUR |
| 610+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| SD03C-7 |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 55A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 150pF
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 4V; 55A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Max. forward impulse current: 55A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 150pF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 353+ | 0.2 EUR |
| 676+ | 0.11 EUR |
| 765+ | 0.094 EUR |
| 946+ | 0.076 EUR |
| 1000+ | 0.072 EUR |
| DMC1030UFDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMC1030UFDBQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
| ZXGD3005E6TA |
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -3.8÷4A; Ch: 1; 25V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -3.8...4A
Number of channels: 1
Supply voltage: 25V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 419ns
Pulse fall time: 467ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -3.8÷4A; Ch: 1; 25V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -3.8...4A
Number of channels: 1
Supply voltage: 25V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 419ns
Pulse fall time: 467ns
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 2128 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 0.67 EUR |
| 180+ | 0.4 EUR |
| 199+ | 0.36 EUR |
| 260+ | 0.28 EUR |
| 274+ | 0.26 EUR |
| ZXGD3009E6TA |
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -1.38÷1.58A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -1.38...1.58A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 210ns
Pulse fall time: 240ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -1.38÷1.58A; Ch: 1; 40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -1.38...1.58A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 210ns
Pulse fall time: 240ns
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
| ZXGD3104N8TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -7÷2.5A; Ch: 1; 5÷25V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2.5A
Number of channels: 1
Supply voltage: 5...25V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 65ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -7÷2.5A; Ch: 1; 5÷25V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2.5A
Number of channels: 1
Supply voltage: 5...25V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 65ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXGD3105N8TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -9÷4A; Ch: 1; 4.5÷25V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -9...4A
Number of channels: 1
Supply voltage: 4.5...25V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 77ns
Pulse fall time: 26ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -9÷4A; Ch: 1; 4.5÷25V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -9...4A
Number of channels: 1
Supply voltage: 4.5...25V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 77ns
Pulse fall time: 26ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXGD3107N8TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -9÷4A; Ch: 1; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -9...4A
Number of channels: 1
Supply voltage: 4.5...40V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 175ns
Pulse fall time: 20ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SO8; -9÷4A; Ch: 1; 4.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SO8
Output current: -9...4A
Number of channels: 1
Supply voltage: 4.5...40V
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 175ns
Pulse fall time: 20ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXGD3111N7TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO7
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO7
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXGD3112N7TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO7
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO7
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXGD3113W6-7 |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -3÷1.5A; Ch: 1; 3.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -3...1.5A
Number of channels: 1
Supply voltage: 3.5...40V
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 360ns
Pulse fall time: 210ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -3÷1.5A; Ch: 1; 3.5÷40V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -3...1.5A
Number of channels: 1
Supply voltage: 3.5...40V
Mounting: SMD
Operating temperature: -40...150°C
Impulse rise time: 360ns
Pulse fall time: 210ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ZXGD3114N7TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO7
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO7; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO7
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| AL5810D-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5810QD-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5810QFJ3-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| AL5815W5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; SOT25; 15mA; Ch: 1; 4.5÷60V
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT25
Output current: 15mA
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 4.5...60V
Kind of package: reel; tape
Produkt ist nicht verfügbar
| AL5816QW5-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| SMAJ7.5CA-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 8.33÷9.21V; 31A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 8.33÷9.21V; 31A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 1450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.25 EUR |
| 635+ | 0.11 EUR |
| 715+ | 0.1 EUR |
| 820+ | 0.087 EUR |
| 880+ | 0.082 EUR |
| DMP10H4D2S-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain current: -210mA
On-state resistance: 5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.44W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Drain-source voltage: -100V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -210mA; Idm: -1A; 440mW
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain current: -210mA
On-state resistance: 5mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.44W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Drain-source voltage: -100V
Produkt ist nicht verfügbar
| DMP10H4D2S-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain current: -210mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.21A; 0.38W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Drain current: -210mA
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.38W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.02 EUR |
| DMP3050LVTQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2004DMK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.55A
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.9A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -550mA; Idm: -1.9A; 500mW
Mounting: SMD
Case: SOT26
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.55A
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.9A
Produkt ist nicht verfügbar
| DMP2004DWK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; 250mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| DMP2004TK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Mounting: SMD
Case: SOT523
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 970pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -310mA; Idm: -0.75A; 320mW
Mounting: SMD
Case: SOT523
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -310mA
On-state resistance: 2.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.32W
Polarisation: unipolar
Gate charge: 970pC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.75A
Produkt ist nicht verfügbar
| DMP2004WK-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -400mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.4A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1.4A; 250mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -400mA
On-state resistance: 2mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.25W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1.4A
Produkt ist nicht verfügbar
| DMP2022LSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 87+ | 0.83 EUR |
| 200+ | 0.36 EUR |
| 211+ | 0.34 EUR |
| DMP2022LSSQ-13 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -35A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 60.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.4A; Idm: -35A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -7.4A
Pulsed drain current: -35A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 60.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2170U-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP2170U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -13A; 1.28W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -13A
Power dissipation: 1.28W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP21D0UFB-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP21D0UFB-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.17A; Idm: -5A; 990mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.17A
Pulsed drain current: -5A
Power dissipation: 0.99W
Case: X1-DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP21D0UFD-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -820mA
Pulsed drain current: -4A
Power dissipation: 490mW
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -820mA; Idm: -4A; 490mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -820mA
Pulsed drain current: -4A
Power dissipation: 490mW
Case: X1-DFN1212-3
Gate-source voltage: ±8V
On-state resistance: 1.3Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP21D0UT-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -650mA
Pulsed drain current: -5A
Power dissipation: 0.33W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -650mA; Idm: -5A; 330mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -650mA
Pulsed drain current: -5A
Power dissipation: 0.33W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 960mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP21D2UFA-7B |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -260mA; Idm: -1.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.26A
Pulsed drain current: -1.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -260mA; Idm: -1.5A; 360mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.26A
Pulsed drain current: -1.5A
Power dissipation: 0.36W
Case: X2-DFN0806-3
Gate-source voltage: ±8V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar