Produkte > DIODES INCORPORATED > Alle Produkte des Herstellers DIODES INCORPORATED (76372) > Seite 1263 nach 1273
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DMN3065LW-7 | DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.77W Case: SOT323 Gate-source voltage: ±12V On-state resistance: 85mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1240 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3066LQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 2.9A On-state resistance: 98mΩ Type of transistor: N-MOSFET Power dissipation: 1.33W Polarisation: unipolar Gate charge: 4.1nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 21A Mounting: SMD Case: SOT23 |
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DMP3068L-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.2A; Idm: -18A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -18A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.165Ω Mounting: SMD Gate charge: 15.9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SBR30A60CTBQ-13 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SBR®; SMD; 60V; 30A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward impulse current: 180A Case: TO263 Max. forward voltage: 0.63V Leakage current: 110µA Technology: SBR® |
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DFLT30A-7 | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 225W; 33.3÷36.8V; 4.65A; unidirectional; PowerDI®123 Type of diode: TVS Peak pulse power dissipation: 225W Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 4.65A Semiconductor structure: unidirectional Case: PowerDI®123 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Number of channels: 1 |
auf Bestellung 2126 Stücke: Lieferzeit 14-21 Tag (e) |
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| AL1791AFE-13 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver Type of integrated circuit: driver |
Produkt ist nicht verfügbar |
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| 74AHCT1G02SE-7 | DIODES INCORPORATED |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT Type of integrated circuit: digital Kind of gate: NOR Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SOT353 Supply voltage: 4.5...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of output: totem pole Family: AHCT |
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| AP7354-33FS4-7 | DIODES INCORPORATED |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; AP7354 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 3.3V Output current: 0.15A Case: X2-DFN1010-4 Mounting: SMD Manufacturer series: AP7354 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2...5.5V Integrated circuit features: shutdown mode control input |
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| B320B-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 20V Load current: 3A Semiconductor structure: single diode Capacitance: 200pF Max. forward voltage: 0.5V Case: SMB Kind of package: reel; tape Leakage current: 20mA Max. forward impulse current: 100A |
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| DMP26M7UFG-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14.5A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 9mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMP26M7UFG-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -14.5A Pulsed drain current: -80A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 9mΩ Mounting: SMD Gate charge: 156nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BAV116W-7-F | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 130V; 215mA; 3us; SOD123; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 130V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD123 Kind of package: reel; tape Max. forward voltage: 1.25V |
auf Bestellung 1940 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV116WSQ-7 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD323; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Kind of package: reel; tape Max. forward voltage: 1.25V Application: automotive industry |
auf Bestellung 1029 Stücke: Lieferzeit 14-21 Tag (e) |
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| AL1788W6-7 | DIODES INCORPORATED |
Category: LED drivers Description: IC: driver; buck,flyback; LED driver; SOT26; Ch: 1; 7÷30V Type of integrated circuit: driver Topology: buck; flyback Kind of integrated circuit: LED driver Case: SOT26 Number of channels: 1 Mounting: SMD Operating temperature: -40...105°C Operating voltage: 7...30V Kind of package: reel; tape |
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SMCJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 20.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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KBP005G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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KBP01G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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KBP02G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 1.5A Max. forward impulse current: 40A Version: flat Case: KBP Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBT70A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 0.6kW Mounting: SMD Case: SMB Max. off-state voltage: 70V Semiconductor structure: unidirectional Max. forward impulse current: 5.3A Breakdown voltage: 77.8...89.5V Leakage current: 5µA |
Produkt ist nicht verfügbar |
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SMCJ70A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 1.5kW Mounting: SMD Case: SMC Max. off-state voltage: 70V Semiconductor structure: unidirectional Max. forward impulse current: 13.3A Breakdown voltage: 77.8...86V Leakage current: 5µA |
Produkt ist nicht verfügbar |
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SMCJ170A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 1.5kW Mounting: SMD Case: SMC Max. off-state voltage: 170V Semiconductor structure: unidirectional Max. forward impulse current: 5.5A Breakdown voltage: 189...209V Leakage current: 5µA |
auf Bestellung 2494 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG4496SSS-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Polarisation: unipolar Power dissipation: 1.42W Kind of package: reel; tape Gate charge: 10.2nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 60A Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 29mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| DFLS1200-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape Case: PowerDI®123 Max. off-state voltage: 200V Max. forward voltage: 0.85V Load current: 1A |
Produkt ist nicht verfügbar |
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| DFLS1200Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape Mounting: SMD Application: automotive industry Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 2µA Kind of package: reel; tape Case: PowerDI®123 Capacitance: 23pF Max. off-state voltage: 200V Max. forward voltage: 0.85V Load current: 1A |
Produkt ist nicht verfügbar |
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| DFLS120L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Case: PowerDI®123 Max. off-state voltage: 20V Max. forward voltage: 0.36V Load current: 1A |
Produkt ist nicht verfügbar |
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| DFLS120LQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape Mounting: SMD Application: automotive industry Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 1mA Power dissipation: 1.67W Kind of package: reel; tape Case: PowerDI®123 Capacitance: 75pF Max. off-state voltage: 20V Max. forward voltage: 0.36V Load current: 1A |
Produkt ist nicht verfügbar |
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DFLS160-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward impulse current: 50A Kind of package: reel; tape Case: PowerDI®123 Capacitance: 67pF Max. off-state voltage: 60V Max. forward voltage: 0.5V Load current: 1A |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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| DFLS160Q-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123 Mounting: SMD Application: automotive industry Type of diode: Schottky rectifying Semiconductor structure: single diode Reverse recovery time: 12ns Max. forward impulse current: 50A Leakage current: 0.1mA Kind of package: reel; tape Case: PowerDI®123 Capacitance: 67pF Max. off-state voltage: 60V Max. forward voltage: 0.5V Load current: 1A |
Produkt ist nicht verfügbar |
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| PD3S120L-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Case: PowerDI®323 Mounting: SMD Semiconductor structure: single diode Leakage current: 30mA Max. forward voltage: 0.42V Max. off-state voltage: 20V Load current: 1A Max. forward impulse current: 33A Capacitance: 49pF |
Produkt ist nicht verfügbar |
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| PD3S120LQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Case: PowerDI®323 Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA Max. forward voltage: 0.42V Max. off-state voltage: 20V Load current: 1A Max. forward impulse current: 33A |
Produkt ist nicht verfügbar |
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| PD3S220LQ-7 | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Case: PowerDI®323 Mounting: SMD Semiconductor structure: single diode Leakage current: 30µA Max. forward voltage: 0.49V Max. off-state voltage: 20V Load current: 2A Max. forward impulse current: 33A |
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SMBJ45A-13-F | DIODES INCORPORATED |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 45V Breakdown voltage: 50...57.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| ZXTR1005K4-13 | DIODES INCORPORATED |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 50mA Case: TO252-4 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 10...100V |
Produkt ist nicht verfügbar |
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| ZXTR1005PD8-13 | DIODES INCORPORATED |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 5V Output current: 42mA Case: PowerDI®5060-8 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 10...100V |
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| DMP2012SN-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -900mA Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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DMN66D0LDW-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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AP431G-13 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA Operating temperature: -20...85°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.495V Maximum output current: 200mA Kind of package: reel; tape Case: SOP8 Tolerance: ±1% Operating voltage: 2.495...36V |
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AP431IANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.5V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±0.5% Operating voltage: 2.5...36V |
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AP431IBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.5V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±1% Operating voltage: 2.5...36V |
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AP431IBRTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.5V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT89 Tolerance: ±1% Operating voltage: 2.5...36V |
Produkt ist nicht verfügbar |
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AP431SAG-7 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Operating temperature: -20...85°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.495V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±1% Operating voltage: 2.495...36V |
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AP431SAN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.5V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±0.5% |
auf Bestellung 2525 Stücke: Lieferzeit 14-21 Tag (e) |
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AP431SANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.5V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±0.5% Operating voltage: 2.5...36V |
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AP431SBN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.5V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±1% Operating voltage: 2.5...36V |
auf Bestellung 2275 Stücke: Lieferzeit 14-21 Tag (e) |
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AP431SBNTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.5V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±1% Operating voltage: 2.5...36V |
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AP431SHAN1TR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.495V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±0.5% Operating voltage: 2.495...36V |
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AP431SHANTR-G1 | DIODES INCORPORATED |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape Operating temperature: -40...125°C Mounting: SMD Type of integrated circuit: voltage reference source Reference voltage: 2.495V Maximum output current: 0.1A Kind of package: reel; tape Case: SOT23 Tolerance: ±0.5% Operating voltage: 2.495...36V |
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| ZDT6753TA | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
Produkt ist nicht verfügbar |
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| ZDT6753TC | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 2.75W Case: SM8 Pulsed collector current: 6A Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
Produkt ist nicht verfügbar |
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FZT758TA | DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXGD3003E6TA | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting Type of integrated circuit: driver Kind of integrated circuit: gate driver Case: SOT26 Output current: -5...5A Number of channels: 1 Supply voltage: 40V Mounting: SMD Operating temperature: -55...150°C Impulse rise time: 77ns Pulse fall time: 85ns Kind of package: reel; tape Kind of output: non-inverting |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| B530CQ-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 100A Semiconductor structure: single diode Case: SMC Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Application: automotive industry Capacitance: 300pF Reverse recovery time: 16ns Load current: 5A Max. forward voltage: 0.55V |
Produkt ist nicht verfügbar |
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| ZXGD3108N8TC | DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; SO8; -5÷2A; Ch: 1; 4÷20V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -5...2A Number of channels: 1 Supply voltage: 4...20V Mounting: SMD Operating temperature: -50...150°C Impulse rise time: 695ns Pulse fall time: 131ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| DESD32VS2SO-7 | DIODES INCORPORATED |
Category: Transil diodes - arrays Description: Diode: TVS array Type of diode: TVS array |
Produkt ist nicht verfügbar |
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1SMB5929B-13 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
auf Bestellung 2035 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMT47M2SFVWQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| DMT6017LFV-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W Mounting: SMD Drain-source voltage: 65V Drain current: 29A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.12W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.3nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 140A Case: PowerDI3333-8 |
Produkt ist nicht verfügbar |
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KBJ402G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A Electrical mounting: THT Max. off-state voltage: 200V Load current: 4A Max. forward impulse current: 120A Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: KBJ Leads: flat pin |
Produkt ist nicht verfügbar |
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KBJ404G | DIODES INCORPORATED |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A Electrical mounting: THT Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 120A Kind of package: tube Version: flat Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: KBJ Leads: flat pin |
Produkt ist nicht verfügbar |
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UDZ11B-7 | DIODES INCORPORATED |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 11V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
| DMN3065LW-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 0.77W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.77W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 460+ | 0.16 EUR |
| 520+ | 0.14 EUR |
| 670+ | 0.11 EUR |
| 710+ | 0.1 EUR |
| DMN3066LQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.9A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Gate charge: 4.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 21A
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.9A; Idm: 21A; 1.33W; SOT23
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.9A
On-state resistance: 98mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.33W
Polarisation: unipolar
Gate charge: 4.1nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 21A
Mounting: SMD
Case: SOT23
Produkt ist nicht verfügbar
| DMP3068L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.2A; Idm: -18A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -18A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.2A; Idm: -18A; 1.2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -18A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SBR30A60CTBQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 60V; 30A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: TO263
Max. forward voltage: 0.63V
Leakage current: 110µA
Technology: SBR®
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SBR®; SMD; 60V; 30A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward impulse current: 180A
Case: TO263
Max. forward voltage: 0.63V
Leakage current: 110µA
Technology: SBR®
Produkt ist nicht verfügbar
| DFLT30A-7 |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 225W; 33.3÷36.8V; 4.65A; unidirectional; PowerDI®123
Type of diode: TVS
Peak pulse power dissipation: 225W
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 4.65A
Semiconductor structure: unidirectional
Case: PowerDI®123
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 225W; 33.3÷36.8V; 4.65A; unidirectional; PowerDI®123
Type of diode: TVS
Peak pulse power dissipation: 225W
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 4.65A
Semiconductor structure: unidirectional
Case: PowerDI®123
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 1
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 196+ | 0.37 EUR |
| 315+ | 0.23 EUR |
| 453+ | 0.16 EUR |
| 479+ | 0.15 EUR |
| AL1791AFE-13 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Category: LED drivers
Description: IC: driver
Type of integrated circuit: driver
Produkt ist nicht verfügbar
| 74AHCT1G02SE-7 |
|
Hersteller: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS,TTL; SMD; SOT353; 4.5÷5.5VDC; AHCT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SOT353
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of output: totem pole
Family: AHCT
Produkt ist nicht verfügbar
| AP7354-33FS4-7 |
|
Hersteller: DIODES INCORPORATED
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; AP7354
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 3.3V
Output current: 0.15A
Case: X2-DFN1010-4
Mounting: SMD
Manufacturer series: AP7354
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: shutdown mode control input
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SMD; AP7354
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 3.3V
Output current: 0.15A
Case: X2-DFN1010-4
Mounting: SMD
Manufacturer series: AP7354
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2...5.5V
Integrated circuit features: shutdown mode control input
Produkt ist nicht verfügbar
| B320B-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Case: SMB
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 200pF
Max. forward voltage: 0.5V
Case: SMB
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
Produkt ist nicht verfügbar
| DMP26M7UFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMP26M7UFG-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -14.5A; Idm: -80A; 2.3W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14.5A
Pulsed drain current: -80A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±10V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BAV116W-7-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 215mA; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: switching; SMD; 130V; 215mA; 3us; SOD123; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 130V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD123
Kind of package: reel; tape
Max. forward voltage: 1.25V
auf Bestellung 1940 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.11 EUR |
| 1040+ | 0.069 EUR |
| 1170+ | 0.061 EUR |
| 1230+ | 0.058 EUR |
| 1300+ | 0.055 EUR |
| BAV116WSQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.25V
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Max. forward voltage: 1.25V
Application: automotive industry
auf Bestellung 1029 Stücke:
Lieferzeit 14-21 Tag (e)| AL1788W6-7 |
|
Hersteller: DIODES INCORPORATED
Category: LED drivers
Description: IC: driver; buck,flyback; LED driver; SOT26; Ch: 1; 7÷30V
Type of integrated circuit: driver
Topology: buck; flyback
Kind of integrated circuit: LED driver
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 7...30V
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; buck,flyback; LED driver; SOT26; Ch: 1; 7÷30V
Type of integrated circuit: driver
Topology: buck; flyback
Kind of integrated circuit: LED driver
Case: SOT26
Number of channels: 1
Mounting: SMD
Operating temperature: -40...105°C
Operating voltage: 7...30V
Kind of package: reel; tape
Produkt ist nicht verfügbar
| SMCJ45A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 50÷55.3V; 20.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 20.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| KBP005G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 136+ | 0.53 EUR |
| KBP01G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| KBP02G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 40A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 40A
Version: flat
Case: KBP
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 0.6 EUR |
| 149+ | 0.48 EUR |
| 181+ | 0.4 EUR |
| 249+ | 0.29 EUR |
| 264+ | 0.27 EUR |
| SMBT70A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 77.8÷89.5V; 5.3A; unidirectional; SMB; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Case: SMB
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.3A
Breakdown voltage: 77.8...89.5V
Leakage current: 5µA
Produkt ist nicht verfügbar
| SMCJ70A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 13.3A
Breakdown voltage: 77.8...86V
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 77.8÷86V; 13.3A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 70V
Semiconductor structure: unidirectional
Max. forward impulse current: 13.3A
Breakdown voltage: 77.8...86V
Leakage current: 5µA
Produkt ist nicht verfügbar
| SMCJ170A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 189...209V
Leakage current: 5µA
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 189÷209V; 5.5A; unidirectional; SMC; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 1.5kW
Mounting: SMD
Case: SMC
Max. off-state voltage: 170V
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 189...209V
Leakage current: 5µA
auf Bestellung 2494 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 232+ | 0.31 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
| DMG4496SSS-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8
Polarisation: unipolar
Power dissipation: 1.42W
Kind of package: reel; tape
Gate charge: 10.2nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| DFLS1200-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Produkt ist nicht verfügbar
| DFLS1200Q-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 2µA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 23pF
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 200V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 2µA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 23pF
Max. off-state voltage: 200V
Max. forward voltage: 0.85V
Load current: 1A
Produkt ist nicht verfügbar
| DFLS120L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Produkt ist nicht verfügbar
| DFLS120LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1mA
Power dissipation: 1.67W
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 75pF
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 1mA
Power dissipation: 1.67W
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 75pF
Max. off-state voltage: 20V
Max. forward voltage: 0.36V
Load current: 1A
Produkt ist nicht verfügbar
| DFLS160-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; PowerDI®123; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward impulse current: 50A
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 171+ | 0.41 EUR |
| DFLS160Q-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 0.1mA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; 12ns; PowerDI®123
Mounting: SMD
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 12ns
Max. forward impulse current: 50A
Leakage current: 0.1mA
Kind of package: reel; tape
Case: PowerDI®123
Capacitance: 67pF
Max. off-state voltage: 60V
Max. forward voltage: 0.5V
Load current: 1A
Produkt ist nicht verfügbar
| PD3S120L-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30mA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Capacitance: 49pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30mA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Capacitance: 49pF
Produkt ist nicht verfügbar
| PD3S120LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Max. forward voltage: 0.42V
Max. off-state voltage: 20V
Load current: 1A
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
| PD3S220LQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30µA
Max. forward voltage: 0.49V
Max. off-state voltage: 20V
Load current: 2A
Max. forward impulse current: 33A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 2A; PowerDI®323; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Case: PowerDI®323
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 30µA
Max. forward voltage: 0.49V
Max. off-state voltage: 20V
Load current: 2A
Max. forward impulse current: 33A
Produkt ist nicht verfügbar
| SMBJ45A-13-F |
|
Hersteller: DIODES INCORPORATED
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 50÷57.5V; 8.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| ZXTR1005K4-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: TO252-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.05A; TO252-4; SMD; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 50mA
Case: TO252-4
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Produkt ist nicht verfügbar
| ZXTR1005PD8-13 |
|
Hersteller: DIODES INCORPORATED
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 42mA
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.042A; PowerDI®5060-8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 5V
Output current: 42mA
Case: PowerDI®5060-8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 10...100V
Produkt ist nicht verfügbar
| DMP2012SN-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -900mA
Pulsed drain current: -2.8A
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMN66D0LDW-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.073A; Idm: 0.8A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| AP431G-13 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA
Operating temperature: -20...85°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 200mA
Kind of package: reel; tape
Case: SOP8
Tolerance: ±1%
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOP8; reel,tape; 200mA
Operating temperature: -20...85°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 200mA
Kind of package: reel; tape
Case: SOP8
Tolerance: ±1%
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
| AP431IANTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
| AP431IBNTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
| AP431IBRTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT89
Tolerance: ±1%
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT89; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT89
Tolerance: ±1%
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
| AP431SAG-7 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -20...85°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -20...85°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
| AP431SAN1TR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
auf Bestellung 2525 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 186+ | 0.39 EUR |
| 256+ | 0.28 EUR |
| 332+ | 0.22 EUR |
| 500+ | 0.14 EUR |
| 600+ | 0.12 EUR |
| 635+ | 0.11 EUR |
| AP431SANTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
| AP431SBN1TR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.5...36V
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 0.6 EUR |
| 200+ | 0.36 EUR |
| 244+ | 0.29 EUR |
| 327+ | 0.22 EUR |
| 626+ | 0.11 EUR |
| AP431SBNTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.5...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±1%
Operating voltage: 2.5...36V
Produkt ist nicht verfügbar
| AP431SHAN1TR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
| AP431SHANTR-G1 |
|
Hersteller: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.495...36V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Operating temperature: -40...125°C
Mounting: SMD
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Maximum output current: 0.1A
Kind of package: reel; tape
Case: SOT23
Tolerance: ±0.5%
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
| ZDT6753TA |
|
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
| ZDT6753TC |
|
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 100V; 2A; SM8
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 2.75W
Case: SM8
Pulsed collector current: 6A
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Produkt ist nicht verfügbar
| FZT758TA |
|
Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 81+ | 0.89 EUR |
| 185+ | 0.39 EUR |
| 196+ | 0.37 EUR |
| ZXGD3003E6TA |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; gate driver; SOT26; -5÷5A; Ch: 1; 40V; OUT: non-inverting
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Case: SOT26
Output current: -5...5A
Number of channels: 1
Supply voltage: 40V
Mounting: SMD
Operating temperature: -55...150°C
Impulse rise time: 77ns
Pulse fall time: 85ns
Kind of package: reel; tape
Kind of output: non-inverting
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 91+ | 0.79 EUR |
| 151+ | 0.47 EUR |
| 166+ | 0.43 EUR |
| 219+ | 0.33 EUR |
| 232+ | 0.31 EUR |
| B530CQ-13-F |
|
Hersteller: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; 16ns; SMC; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Case: SMC
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Capacitance: 300pF
Reverse recovery time: 16ns
Load current: 5A
Max. forward voltage: 0.55V
Produkt ist nicht verfügbar
| ZXGD3108N8TC |
|
Hersteller: DIODES INCORPORATED
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO8; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; SO8; -5÷2A; Ch: 1; 4÷20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -5...2A
Number of channels: 1
Supply voltage: 4...20V
Mounting: SMD
Operating temperature: -50...150°C
Impulse rise time: 695ns
Pulse fall time: 131ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| DESD32VS2SO-7 |
|
Hersteller: DIODES INCORPORATED
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
Produkt ist nicht verfügbar
| 1SMB5929B-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
auf Bestellung 2035 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 182+ | 0.39 EUR |
| 291+ | 0.25 EUR |
| 552+ | 0.13 EUR |
| 584+ | 0.12 EUR |
| DMT47M2SFVWQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DMT6017LFV-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 29A; Idm: 140A; 2.12W
Mounting: SMD
Drain-source voltage: 65V
Drain current: 29A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.12W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.3nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 140A
Case: PowerDI3333-8
Produkt ist nicht verfügbar
| KBJ402G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
| KBJ404G |
|
Hersteller: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 120A
Electrical mounting: THT
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 120A
Kind of package: tube
Version: flat
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: KBJ
Leads: flat pin
Produkt ist nicht verfügbar
| UDZ11B-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 11V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 11V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Produkt ist nicht verfügbar