| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| CRCW120668K0FKEAHP | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 68kΩ; 0.25W; ±1%; -55÷155°C Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Operating temperature: -55...155°C Tolerance: ±1% Type of resistor: thick film Resistance: 68kΩ Temperature coefficient: 100ppm/°C Max. operating voltage: 200V |
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P6SMB13CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB13CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 13V; 33A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 11.1V Breakdown voltage: 13V Max. forward impulse current: 33A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB27CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB27CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB27CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB27CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 16A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB11CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB11CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB11CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB11CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9.4V Breakdown voltage: 11V Max. forward impulse current: 38.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB120CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 3.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB120CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 3.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB120CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 3.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB120CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 3.6A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB12CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB12CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB12CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB12CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 35.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
Produkt ist nicht verfügbar |
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| WSLP1206R0121FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; sensing; SMD; 1206; 12.1mΩ; 1W; ±1% Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 12.1mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C |
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| WSLP0805R0420FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 0805; 42mΩ Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 42mΩ Power: 0.5W Tolerance: ±1% Operating temperature: -65...170°C |
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| WSLP1206R0240FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; sensing; SMD; 1206; 24mΩ; 1W; ±1%; -65÷170°C Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 24mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C |
Produkt ist nicht verfügbar |
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| ZSC00AP1021JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 63VDC; Ø18x21.5mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 1mF Operating voltage: 63V DC Body dimensions: Ø18x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
Produkt ist nicht verfügbar |
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| ZSC00AF4701JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 47uF; 63VDC; Ø8x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 47µF Operating voltage: 63V DC Body dimensions: Ø8x10mm Tolerance: ±20% Operating temperature: -55...105°C |
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| ZSC00AH1511JARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 63VDC; Ø12.5x13.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 150µF Operating voltage: 63V DC Body dimensions: Ø12.5x13.5mm Tolerance: ±20% Operating temperature: -55...105°C |
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| ZSC00AF2202AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 22uF; 100VDC; Ø8x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 22µF Operating voltage: 100V DC Body dimensions: Ø8x10mm Tolerance: ±20% Operating temperature: -55...105°C |
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| ZSC00AF4R72AARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; low ESR; SMD; 4.7uF; 100VDC; Ø8x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 4.7µF Operating voltage: 100V DC Body dimensions: Ø8x10mm Tolerance: ±20% Operating temperature: -55...105°C |
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| SIHLL014TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| WSLP0603R0500FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 0603; 50mΩ Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 50mΩ Power: 0.4W Tolerance: ±1% Operating temperature: -65...170°C |
Produkt ist nicht verfügbar |
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| WSLP0805R0500FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 0805; 50mΩ Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 50mΩ Power: 0.5W Tolerance: ±1% Operating temperature: -65...170°C |
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| WSLP1206R0500FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 50mΩ; 1W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 50mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C |
Produkt ist nicht verfügbar |
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| WSLP1206R0500FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 50mΩ; 1W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 50mΩ Power: 1W Tolerance: ±1% Operating temperature: -65...170°C |
Produkt ist nicht verfügbar |
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CRCW08051K00FKEAHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 1kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 1kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
auf Bestellung 17360 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIR876BDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51.4A Pulsed drain current: 120A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIZ704DT-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/30W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12/16A Pulsed drain current: 30...40A Power dissipation: 20/30W Gate-source voltage: ±20V On-state resistance: 30/17mΩ Mounting: SMD Gate charge: 12/23nC Kind of package: reel; tape Kind of channel: enhanced |
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| CRCW0603150RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 150Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 150Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
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| SIR106ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83.3W Drain-source voltage: 100V Drain current: 65.8A On-state resistance: 9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 52nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A |
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| SIR106DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A Case: PowerPAK® SO8 Mounting: SMD Power dissipation: 83.3W Drain-source voltage: 100V Drain current: 65.8A On-state resistance: 9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 64nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A |
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| VS-UFB130FA60 | VISHAY |
Category: Diode modules Description: Module: diode; double independent; 600V; 130A; SOT227B; screw; 37ns Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 130A Case: SOT227B Max. forward voltage: 1.82V Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: ultrafast switching Technology: FRED Pt® Reverse recovery time: 37ns |
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| VS-UFB170FA60 | VISHAY |
Category: Diode modules Description: Module: diode; double independent; 600V; 170A; SOT227B; screw; 60ns Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 170A Case: SOT227B Max. forward voltage: 1.03V Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: ultrafast switching Technology: FRED Pt® Reverse recovery time: 60ns |
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| VS-UFB230FA60 | VISHAY |
Category: Diode modules Description: Module: diode; double independent; 600V; 230A; SOT227B; screw; 43ns Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 230A Case: SOT227B Max. forward voltage: 1.78V Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: ultrafast switching Technology: FRED Pt® Reverse recovery time: 43ns |
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| VS-UFL130FA60 | VISHAY |
Category: Diode modules Description: Module: diode; double independent; 600V; 130A; SOT227B; screw; 42ns Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 130A Case: SOT227B Max. forward voltage: 1.68V Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: ultrafast switching Technology: FRED Pt® Reverse recovery time: 42ns |
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| VS-UFL230FA60 | VISHAY |
Category: Diode modules Description: Module: diode; double independent; 600V; 230A; SOT227B; screw; 44ns Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 0.6kV Load current: 230A Case: SOT227B Max. forward voltage: 1.55V Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: ultrafast switching Technology: FRED Pt® Reverse recovery time: 44ns |
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| VS-KBPC806PBF | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 125A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 125A Version: square Case: D72; KBPC8 Electrical mounting: THT Leads: wire Ø 1.1mm Kind of package: bulk Max. forward voltage: 1V |
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| VS-EPH3006-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 220A; TO247AC-2; 26ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: TO247AC-2 Max. forward voltage: 2.65V Reverse recovery time: 26ns |
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| ILQ621GB-X009 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 4 Kind of output: transistor Insulation voltage: 4.42kV CTR@If: 100-600%@5mA Collector-emitter voltage: 70V Case: SMD16 Conform to the norm: UL Turn-on time: 4.3µs Turn-off time: 2.5µs Max. off-state voltage: 6V Manufacturer series: ILQ621GB |
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ILQ621GB | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 4 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-600%@5mA Collector-emitter voltage: 70V Case: DIP16 |
auf Bestellung 635 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7336ADP-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SI7336ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| WSL12067L500FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; sensing; SMD; 1206; 7.5mΩ; 0.5W; ±1% Type of resistor: metal strip Kind of resistor: sensing Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 7.5mΩ Power: 0.5W Tolerance: ±1% Operating temperature: -65...170°C |
Produkt ist nicht verfügbar |
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MMA02040C3600FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 360Ω; 0.4W; ±1%; -55÷155°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 360Ω Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
auf Bestellung 3450 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW020110K0FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0201; 10kΩ; 0.05W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0201 Case - mm: 0603 Resistance: 10kΩ Power: 50mW Tolerance: ±1% Max. operating voltage: 30V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW020110K0FNED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0201; 10kΩ; 0.05W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0201 Case - mm: 0603 Resistance: 10kΩ Power: 50mW Tolerance: ±1% Max. operating voltage: 30V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW040210K0FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 10kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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CRCW040210K0JNED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0402; 10kΩ; 0.063W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 10kΩ Power: 63mW Tolerance: ±5% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02070C4700FBP00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0207 MELF; 470Ω; 1W; ±1%; Ø2.2x5.8mm Type of resistor: thin film Mounting: SMD Case: 0207 MELF Resistance: 470Ω Power: 1W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
auf Bestellung 972 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW2512470RFKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 470Ω Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
Produkt ist nicht verfügbar |
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CRCW2512470RJNEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 470Ω Power: 1W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
Produkt ist nicht verfügbar |
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CRCW2512470RJNTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 470Ω Power: 1W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
auf Bestellung 1060 Stücke: Lieferzeit 14-21 Tag (e) |
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| PRV6SAABAYB25502KA | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 5kΩ; 1.5W; ±10%; 3.17mm; linear IP rating: IP67 Leads: for soldering Operating temperature: -55...125°C Mechanical durability: 50000 cycles Electrical rotation angle: 270° Mechanical rotation angle: 300° Characteristics: linear Shaft length: 9.5mm Type of potentiometer: shaft Shaft diameter: 3.17mm Temperature coefficient: 150ppm/°C Tolerance: ±10% Resistance: 5kΩ Track material: cermet Kind of potentiometer: single turn Power: 1.5W |
Produkt ist nicht verfügbar |
| CRCW120668K0FKEAHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 68kΩ; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Resistance: 68kΩ
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 68kΩ; 0.25W; ±1%; -55÷155°C
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Operating temperature: -55...155°C
Tolerance: ±1%
Type of resistor: thick film
Resistance: 68kΩ
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Produkt ist nicht verfügbar
| P6SMB13CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB13CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 33A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Breakdown voltage: 13V
Max. forward impulse current: 33A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB27CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB27CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB27CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB27CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB11CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB11CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB11CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB11CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 38.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9.4V
Breakdown voltage: 11V
Max. forward impulse current: 38.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB120CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB120CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB120CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB120CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 120V; 3.6A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 3.6A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB12CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB12CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB12CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB12CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 12V; 35.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 35.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| WSLP1206R0121FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 1206; 12.1mΩ; 1W; ±1%
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 12.1mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 1206; 12.1mΩ; 1W; ±1%
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 12.1mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| WSLP0805R0420FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 0805; 42mΩ
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 42mΩ
Power: 0.5W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 0805; 42mΩ
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 42mΩ
Power: 0.5W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| WSLP1206R0240FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 1206; 24mΩ; 1W; ±1%; -65÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 24mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 1206; 24mΩ; 1W; ±1%; -65÷170°C
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 24mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| ZSC00AP1021JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 63VDC; Ø18x21.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 63V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 63VDC; Ø18x21.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 63V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00AF4701JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 47uF; 63VDC; Ø8x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 47µF
Operating voltage: 63V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 47uF; 63VDC; Ø8x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 47µF
Operating voltage: 63V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00AH1511JARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 63VDC; Ø12.5x13.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 150µF
Operating voltage: 63V DC
Body dimensions: Ø12.5x13.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 150uF; 63VDC; Ø12.5x13.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 150µF
Operating voltage: 63V DC
Body dimensions: Ø12.5x13.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00AF2202AARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 22uF; 100VDC; Ø8x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 22µF
Operating voltage: 100V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 22uF; 100VDC; Ø8x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 22µF
Operating voltage: 100V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| ZSC00AF4R72AARL |
|
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 4.7uF; 100VDC; Ø8x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 100V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 4.7uF; 100VDC; Ø8x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 4.7µF
Operating voltage: 100V DC
Body dimensions: Ø8x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Produkt ist nicht verfügbar
| SIHLL014TR-GE3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Pulsed drain current: 22A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| WSLP0603R0500FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 0603; 50mΩ
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 50mΩ
Power: 0.4W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 0603; 50mΩ
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 50mΩ
Power: 0.4W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| WSLP0805R0500FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 0805; 50mΩ
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 50mΩ
Power: 0.5W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 0805; 50mΩ
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 50mΩ
Power: 0.5W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| WSLP1206R0500FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 50mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 50mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 50mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 50mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| WSLP1206R0500FEB |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 50mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 50mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 50mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 50mΩ
Power: 1W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| CRCW08051K00FKEAHP |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
auf Bestellung 17360 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 510+ | 0.14 EUR |
| 1230+ | 0.058 EUR |
| 2520+ | 0.028 EUR |
| 3850+ | 0.019 EUR |
| 4070+ | 0.018 EUR |
| SIR876BDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51.4A
Pulsed drain current: 120A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51.4A
Pulsed drain current: 120A
Power dissipation: 71.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIZ704DT-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/30W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12/16A
Pulsed drain current: 30...40A
Power dissipation: 20/30W
Gate-source voltage: ±20V
On-state resistance: 30/17mΩ
Mounting: SMD
Gate charge: 12/23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 12/16A; 20/30W
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12/16A
Pulsed drain current: 30...40A
Power dissipation: 20/30W
Gate-source voltage: ±20V
On-state resistance: 30/17mΩ
Mounting: SMD
Gate charge: 12/23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| CRCW0603150RFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 150Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 150Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 150Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 150Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Produkt ist nicht verfügbar
| SIR106ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Produkt ist nicht verfügbar
| SIR106DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 64nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 65.8A; Idm: 150A
Case: PowerPAK® SO8
Mounting: SMD
Power dissipation: 83.3W
Drain-source voltage: 100V
Drain current: 65.8A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 64nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Produkt ist nicht verfügbar
| VS-UFB130FA60 |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; double independent; 600V; 130A; SOT227B; screw; 37ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 130A
Case: SOT227B
Max. forward voltage: 1.82V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 37ns
Category: Diode modules
Description: Module: diode; double independent; 600V; 130A; SOT227B; screw; 37ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 130A
Case: SOT227B
Max. forward voltage: 1.82V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 37ns
Produkt ist nicht verfügbar
| VS-UFB170FA60 |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; double independent; 600V; 170A; SOT227B; screw; 60ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 170A
Case: SOT227B
Max. forward voltage: 1.03V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 60ns
Category: Diode modules
Description: Module: diode; double independent; 600V; 170A; SOT227B; screw; 60ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 170A
Case: SOT227B
Max. forward voltage: 1.03V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
| VS-UFB230FA60 |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; double independent; 600V; 230A; SOT227B; screw; 43ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 230A
Case: SOT227B
Max. forward voltage: 1.78V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 43ns
Category: Diode modules
Description: Module: diode; double independent; 600V; 230A; SOT227B; screw; 43ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 230A
Case: SOT227B
Max. forward voltage: 1.78V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 43ns
Produkt ist nicht verfügbar
| VS-UFL130FA60 |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; double independent; 600V; 130A; SOT227B; screw; 42ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 130A
Case: SOT227B
Max. forward voltage: 1.68V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 42ns
Category: Diode modules
Description: Module: diode; double independent; 600V; 130A; SOT227B; screw; 42ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 130A
Case: SOT227B
Max. forward voltage: 1.68V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 42ns
Produkt ist nicht verfügbar
| VS-UFL230FA60 |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; double independent; 600V; 230A; SOT227B; screw; 44ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 230A
Case: SOT227B
Max. forward voltage: 1.55V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 44ns
Category: Diode modules
Description: Module: diode; double independent; 600V; 230A; SOT227B; screw; 44ns
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 0.6kV
Load current: 230A
Case: SOT227B
Max. forward voltage: 1.55V
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: ultrafast switching
Technology: FRED Pt®
Reverse recovery time: 44ns
Produkt ist nicht verfügbar
| VS-KBPC806PBF |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 125A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 125A
Version: square
Case: D72; KBPC8
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 125A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 125A
Version: square
Case: D72; KBPC8
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1V
Produkt ist nicht verfügbar
| VS-EPH3006-N3 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 220A; TO247AC-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: TO247AC-2
Max. forward voltage: 2.65V
Reverse recovery time: 26ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 220A; TO247AC-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: TO247AC-2
Max. forward voltage: 2.65V
Reverse recovery time: 26ns
Produkt ist nicht verfügbar
| ILQ621GB-X009 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-600%@5mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 4.3µs
Turn-off time: 2.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQ621GB
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 4; OUT: transistor; Uinsul: 4.42kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 4
Kind of output: transistor
Insulation voltage: 4.42kV
CTR@If: 100-600%@5mA
Collector-emitter voltage: 70V
Case: SMD16
Conform to the norm: UL
Turn-on time: 4.3µs
Turn-off time: 2.5µs
Max. off-state voltage: 6V
Manufacturer series: ILQ621GB
Produkt ist nicht verfügbar
| ILQ621GB |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-600%@5mA
Collector-emitter voltage: 70V
Case: DIP16
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 4
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-600%@5mA
Collector-emitter voltage: 70V
Case: DIP16
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.72 EUR |
| 32+ | 2.3 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
| SI7336ADP-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI7336ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 5.4W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| WSL12067L500FEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 1206; 7.5mΩ; 0.5W; ±1%
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 7.5mΩ
Power: 0.5W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; sensing; SMD; 1206; 7.5mΩ; 0.5W; ±1%
Type of resistor: metal strip
Kind of resistor: sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 7.5mΩ
Power: 0.5W
Tolerance: ±1%
Operating temperature: -65...170°C
Produkt ist nicht verfügbar
| MMA02040C3600FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 360Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 360Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 360Ω; 0.4W; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 360Ω
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1150+ | 0.063 EUR |
| 1925+ | 0.037 EUR |
| 3100+ | 0.023 EUR |
| 3450+ | 0.02 EUR |
| CRCW020110K0FKED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 10kΩ; 0.05W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 10kΩ
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 10kΩ; 0.05W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 10kΩ
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 930+ | 0.077 EUR |
| 1770+ | 0.04 EUR |
| 2280+ | 0.031 EUR |
| 3050+ | 0.023 EUR |
| 3230+ | 0.022 EUR |
| CRCW020110K0FNED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 10kΩ; 0.05W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 10kΩ
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 10kΩ; 0.05W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 10kΩ
Power: 50mW
Tolerance: ±1%
Max. operating voltage: 30V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.021 EUR |
| CRCW040210K0FKED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| CRCW040210K0JNED |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 0.063W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 63mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 0.063W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 63mW
Tolerance: ±5%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.018 EUR |
| 13000+ | 0.0055 EUR |
| 19000+ | 0.0038 EUR |
| 20000+ | 0.0036 EUR |
| SMM02070C4700FBP00 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 470Ω; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 470Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0207 MELF; 470Ω; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: thin film
Mounting: SMD
Case: 0207 MELF
Resistance: 470Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 610+ | 0.12 EUR |
| 740+ | 0.097 EUR |
| CRCW2512470RFKTHBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 470Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 470Ω
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Produkt ist nicht verfügbar
| CRCW2512470RJNEG |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Produkt ist nicht verfügbar
| CRCW2512470RJNTHBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 470Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 470Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
auf Bestellung 1060 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 650+ | 0.11 EUR |
| 1060+ | 0.067 EUR |
| PRV6SAABAYB25502KA |
|
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 5kΩ; 1.5W; ±10%; 3.17mm; linear
IP rating: IP67
Leads: for soldering
Operating temperature: -55...125°C
Mechanical durability: 50000 cycles
Electrical rotation angle: 270°
Mechanical rotation angle: 300°
Characteristics: linear
Shaft length: 9.5mm
Type of potentiometer: shaft
Shaft diameter: 3.17mm
Temperature coefficient: 150ppm/°C
Tolerance: ±10%
Resistance: 5kΩ
Track material: cermet
Kind of potentiometer: single turn
Power: 1.5W
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 5kΩ; 1.5W; ±10%; 3.17mm; linear
IP rating: IP67
Leads: for soldering
Operating temperature: -55...125°C
Mechanical durability: 50000 cycles
Electrical rotation angle: 270°
Mechanical rotation angle: 300°
Characteristics: linear
Shaft length: 9.5mm
Type of potentiometer: shaft
Shaft diameter: 3.17mm
Temperature coefficient: 150ppm/°C
Tolerance: ±10%
Resistance: 5kΩ
Track material: cermet
Kind of potentiometer: single turn
Power: 1.5W
Produkt ist nicht verfügbar