SI7336ADP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.27 EUR |
| 6000+ | 1.22 EUR |
| 9000+ | 1.18 EUR |
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Technische Details SI7336ADP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V, Power Dissipation (Max): 5.4W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V.
Weitere Produktangebote SI7336ADP-T1-GE3 nach Preis ab 1.33 EUR bis 2.83 EUR
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SI7336ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 30A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 5.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V |
auf Bestellung 11505 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7336ADP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 30A 5.4W 3.0mohm @ 10V |
auf Bestellung 12958 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI7336ADP-T1-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7336ADP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 30A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7336ADP-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI7336ADP-T1-GE3 - N CH MOSFET Transistormontage: Surface Mount Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 30 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - Unlimited Verlustleistung Pd: 5.4 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: N Channel Betriebswiderstand, Rds(on): 0.0024 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1 SVHC: Lead |
Produkt ist nicht verfügbar |
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| SI7336ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7336ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 5.4W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 5.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |