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SIR876BDP-T1-RE3 Vishay Siliconix
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Description: N-CHANNEL 100-V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 51.4A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.84 EUR |
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Technische Details SIR876BDP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 51.4A (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 71.4W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 50 V.
Weitere Produktangebote SIR876BDP-T1-RE3 nach Preis ab 0.89 EUR bis 2.02 EUR
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SIR876BDP-T1-RE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 51.4A (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 50 V |
auf Bestellung 5475 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR876BDP-T1-RE3 | Hersteller : Vishay |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR876BDP-T1-RE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51.4A Pulsed drain current: 120A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIR876BDP-T1-RE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 51.4A Pulsed drain current: 120A Power dissipation: 71.4W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |