| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BAV101-GS08 | VISHAY |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 120V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V Mounting: SMD Kind of package: reel; tape Reverse recovery time: 50ns Max. forward impulse current: 1A Power dissipation: 0.5W Type of diode: switching Features of semiconductor devices: small signal Case: MiniMELF; SOD80 Capacitance: 1.5pF Max. off-state voltage: 120V Max. load current: 0.625A Max. forward voltage: 1V Load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 7460 Stücke: Lieferzeit 14-21 Tag (e) |
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593D337X06R3D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; D; 2917; ±20% Type of capacitor: tantalum Kind of capacitor: low ESR Mounting: SMD Capacitance: 330µF Operating voltage: 6.3V DC Tolerance: ±20% Operating temperature: -55...125°C Capacitors series: Tantamount ESR value: 125mΩ Case: D Case - inch: 2917 Case - mm: 7343 |
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593D337X06R3E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; E; 2917; ±20% Case: E Mounting: SMD ESR value: 100mΩ Type of capacitor: tantalum Capacitors series: Tantamount Capacitance: 330µF Operating voltage: 6.3V DC Case - inch: 2917 Case - mm: 7343 Tolerance: ±20% Kind of capacitor: low ESR Operating temperature: -55...125°C |
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593D337X96R3E2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; E; 2917; ±10% Type of capacitor: tantalum Kind of capacitor: low ESR Capacitance: 330µF Operating voltage: 6.3V DC Case: E Case - inch: 2917 Case - mm: 7343 ESR value: 100mΩ Capacitors series: Tantamount Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ0805G475KXYTW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 4.7uF; 6.3V; X5R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 4.7µF Operating voltage: 6.3V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...85°C |
Produkt ist nicht verfügbar |
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| SUM50010E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced |
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293D156X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 15uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 15µF Operating voltage: 10V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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293D156X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 15uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Case: C Operating temperature: -55...125°C Mounting: SMD Case - mm: 6032 Case - inch: 2312 Tolerance: ±10% Type of capacitor: tantalum Capacitance: 15µF Operating voltage: 16V DC Capacitors series: Tantamount |
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293D156X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 15uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 15µF Operating voltage: 25V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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293D156X9035D2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 15uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Case - mm: 7343 Case - inch: 2917 Case: D Tolerance: ±10% Type of capacitor: tantalum Capacitance: 15µF Operating voltage: 35V DC Capacitors series: Tantamount |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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293D156X96R3A2TE3 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 15uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 15µF Operating voltage: 6.3V DC Mounting: SMD Case: A Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% Operating temperature: -55...125°C Capacitors series: Tantamount |
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MBB0207VD1002BC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 10kΩ; 0.4W; ±0.1%; Ø2.5x6.3mm; -55÷155°C Type of resistor: metal film Mounting: THT Resistance: 10kΩ Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.3mm Leads dimensions: Ø0.6x28mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C Leads: axial |
auf Bestellung 1585 Stücke: Lieferzeit 14-21 Tag (e) |
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MCT06030C1009FP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 10Ω; 0.1W; ±1%; -55÷125°C Power: 0.1W Mounting: SMD Operating temperature: -55...125°C Max. operating voltage: 75V Tolerance: ±1% Resistance: 10Ω Type of resistor: thin film Case - mm: 1608 Case - inch: 0603 |
Produkt ist nicht verfügbar |
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| IRFR110TRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRFR110TRLPBF-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PTCCL11H251HBE | VISHAY |
Category: PTC Thermistors Description: Fuse: PTC thermistor; 250mA; ceramic; 5mm Terminal pitch: 5mm Operating temperature: 0...70°C Type of fuse: PTC thermistor Max. voltage: 265V Switched current: 375mA Diameter: 10.5mm Current rating: 0.25A Kind of fuse: ceramic |
auf Bestellung 988 Stücke: Lieferzeit 14-21 Tag (e) |
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| MAL225953331E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø22x35mm; ±20% Mounting: SNAP-IN Operating temperature: -40...105°C Operating voltage: 250V DC Capacitance: 330µF Type of capacitor: electrolytic Body dimensions: Ø22x35mm Tolerance: ±20% |
Produkt ist nicht verfügbar |
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SMM02040C3009FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 30Ω; 250mW; ±1%; -55÷155°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 30Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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SMM02040D3001BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 3kΩ; 0.4W; ±0.1%; 25ppm/°C Case: 0204 MiniMELF Mounting: SMD Operating temperature: -55...155°C Resistance: 3kΩ Body dimensions: Ø1.5x3.6mm Power: 0.4W Temperature coefficient: 25ppm/°C Max. operating voltage: 200V Tolerance: ±0.1% Type of resistor: thin film |
auf Bestellung 202 Stücke: Lieferzeit 14-21 Tag (e) |
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SMM02040D3002BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 30kΩ; 0.4W; ±0.1% Case: 0204 MiniMELF Mounting: SMD Operating temperature: -55...155°C Resistance: 30kΩ Body dimensions: Ø1.5x3.6mm Power: 0.4W Temperature coefficient: 25ppm/°C Max. operating voltage: 200V Tolerance: ±0.1% Type of resistor: thin film |
Produkt ist nicht verfügbar |
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SMM02040C3300FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 330Ω; 250mW; ±1%; 50ppm/°C Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 330Ω Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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SMM02040D1300BB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0204 MiniMELF; 130Ω; 0.4W; ±0.1% Type of resistor: thin film Mounting: SMD Case: 0204 MiniMELF Resistance: 130Ω Power: 0.4W Tolerance: ±0.1% Max. operating voltage: 200V Body dimensions: Ø1.5x3.6mm Operating temperature: -55...155°C Temperature coefficient: 25ppm/°C |
Produkt ist nicht verfügbar |
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IL410-X016 | VISHAY |
Category: Optotriacs Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Mounting: THT Number of channels: 1 Slew rate: 10kV/μs |
Produkt ist nicht verfügbar |
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IL4118 | VISHAY |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 0.7mA Mounting: THT |
Produkt ist nicht verfügbar |
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VJ0805A100JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0805 Mounting: SMD Case - inch: 0805 Case - mm: 2012 Tolerance: ±5% Operating temperature: -55...125°C Operating voltage: 50V Type of capacitor: ceramic Dielectric: C0G (NP0) Capacitance: 10pF Kind of capacitor: MLCC |
auf Bestellung 6600 Stücke: Lieferzeit 14-21 Tag (e) |
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TSOP39436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
auf Bestellung 2277 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSOP53436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Frequency: 36kHz Viewing angle: 45° Type of photoelement: integrated IR receiver Mounting: THT Supply voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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TSOP58336 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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| TSOP58436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
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| TSOP94236 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
Produkt ist nicht verfügbar |
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| TSOP94336 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
Produkt ist nicht verfügbar |
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| TSOP94436 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
Produkt ist nicht verfügbar |
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| TSOP94636 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
Produkt ist nicht verfügbar |
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| TSOP98236 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2...3.6V |
Produkt ist nicht verfügbar |
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| TSOP98336 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 2.5÷3.6V; 45° Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...3.6V |
Produkt ist nicht verfügbar |
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P6SMB10A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
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P6SMB10A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
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P6SMB10A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
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P6SMB10A-M3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape Mounting: SMD Kind of package: reel; tape Manufacturer series: P6SMB Leakage current: 10µA Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: unidirectional Max. off-state voltage: 8.55V Type of diode: TVS Tolerance: ±5% Features of semiconductor devices: glass passivated Case: SMB Technology: TransZorb® Peak pulse power dissipation: 0.6kW |
Produkt ist nicht verfügbar |
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P6SMB10CA-E3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB10CA-E3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB10CA-M3/52 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB10CA-M3/5B | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6SMB |
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P6SMB110A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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P6SMB110A-E3/5B | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
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P6SMB110A-M3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6SMB Max. forward impulse current: 3.9A Breakdown voltage: 110V Technology: TransZorb® Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
Produkt ist nicht verfügbar |
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| SIHA21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Pulsed drain current: 37A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
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| SIHB21N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHG21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHG21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHP21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHP21N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.3A Pulsed drain current: 37A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHW21N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Pulsed drain current: 38A Power dissipation: 179W Case: TO247AD Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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CRCW0805348KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 348kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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 |
LVB1560-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A Max. off-state voltage: 0.6kV Load current: 15A Kind of package: tube Max. forward impulse current: 0.4kA Case: GSIB-5S Max. forward voltage: 0.9V Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Leads: flat pin |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFPC50LCPBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR020TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 56A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9020PBF | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9020TRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRFR9020TRPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -9.9A Pulsed drain current: -40A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| BAV101-GS08 |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Power dissipation: 0.5W
Type of diode: switching
Features of semiconductor devices: small signal
Case: MiniMELF; SOD80
Capacitance: 1.5pF
Max. off-state voltage: 120V
Max. load current: 0.625A
Max. forward voltage: 1V
Load current: 0.25A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.25A; 50ns; MiniMELF,SOD80; Ufmax: 1V
Mounting: SMD
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Power dissipation: 0.5W
Type of diode: switching
Features of semiconductor devices: small signal
Case: MiniMELF; SOD80
Capacitance: 1.5pF
Max. off-state voltage: 120V
Max. load current: 0.625A
Max. forward voltage: 1V
Load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 7460 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 295+ | 0.24 EUR |
| 407+ | 0.18 EUR |
| 869+ | 0.082 EUR |
| 975+ | 0.073 EUR |
| 1174+ | 0.061 EUR |
| 1316+ | 0.054 EUR |
| 2193+ | 0.033 EUR |
| 2315+ | 0.031 EUR |
| 593D337X06R3D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; D; 2917; ±20%
Type of capacitor: tantalum
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 125mΩ
Case: D
Case - inch: 2917
Case - mm: 7343
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; D; 2917; ±20%
Type of capacitor: tantalum
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 330µF
Operating voltage: 6.3V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Capacitors series: Tantamount
ESR value: 125mΩ
Case: D
Case - inch: 2917
Case - mm: 7343
Produkt ist nicht verfügbar
| 593D337X06R3E2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; E; 2917; ±20%
Case: E
Mounting: SMD
ESR value: 100mΩ
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 330µF
Operating voltage: 6.3V DC
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Kind of capacitor: low ESR
Operating temperature: -55...125°C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; E; 2917; ±20%
Case: E
Mounting: SMD
ESR value: 100mΩ
Type of capacitor: tantalum
Capacitors series: Tantamount
Capacitance: 330µF
Operating voltage: 6.3V DC
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Kind of capacitor: low ESR
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| 593D337X96R3E2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; E; 2917; ±10%
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 330µF
Operating voltage: 6.3V DC
Case: E
Case - inch: 2917
Case - mm: 7343
ESR value: 100mΩ
Capacitors series: Tantamount
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 330uF; 6.3VDC; SMD; E; 2917; ±10%
Type of capacitor: tantalum
Kind of capacitor: low ESR
Capacitance: 330µF
Operating voltage: 6.3V DC
Case: E
Case - inch: 2917
Case - mm: 7343
ESR value: 100mΩ
Capacitors series: Tantamount
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 51+ | 1.42 EUR |
| 65+ | 1.1 EUR |
| 123+ | 0.58 EUR |
| 130+ | 0.55 EUR |
| VJ0805G475KXYTW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 6.3V; X5R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 4.7uF; 6.3V; X5R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 4.7µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...85°C
Produkt ist nicht verfügbar
| SUM50010E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 212nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 293D156X9010C2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 222+ | 0.32 EUR |
| 327+ | 0.22 EUR |
| 379+ | 0.19 EUR |
| 400+ | 0.17 EUR |
| 293D156X9016C2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Case: C
Operating temperature: -55...125°C
Mounting: SMD
Case - mm: 6032
Case - inch: 2312
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Case: C
Operating temperature: -55...125°C
Mounting: SMD
Case - mm: 6032
Case - inch: 2312
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 16V DC
Capacitors series: Tantamount
Produkt ist nicht verfügbar
| 293D156X9025D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 25V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 130+ | 0.55 EUR |
| 156+ | 0.46 EUR |
| 248+ | 0.29 EUR |
| 262+ | 0.27 EUR |
| 293D156X9035D2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Case - mm: 7343
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 35V DC
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 35VDC; SMD; D; 2917; ±10%; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Case - mm: 7343
Case - inch: 2917
Case: D
Tolerance: ±10%
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 35V DC
Capacitors series: Tantamount
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 92+ | 0.79 EUR |
| 122+ | 0.59 EUR |
| 128+ | 0.56 EUR |
| 293D156X96R3A2TE3 |
|
Hersteller: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 15uF; 6.3VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 15µF
Operating voltage: 6.3V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Capacitors series: Tantamount
Produkt ist nicht verfügbar
| MBB0207VD1002BC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 10kΩ; 0.4W; ±0.1%; Ø2.5x6.3mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 10kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.3mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: metal film; THT; 10kΩ; 0.4W; ±0.1%; Ø2.5x6.3mm; -55÷155°C
Type of resistor: metal film
Mounting: THT
Resistance: 10kΩ
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.3mm
Leads dimensions: Ø0.6x28mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Leads: axial
auf Bestellung 1585 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.46 EUR |
| 54+ | 1.33 EUR |
| 102+ | 0.7 EUR |
| 108+ | 0.67 EUR |
| 500+ | 0.64 EUR |
| MCT06030C1009FP500 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10Ω; 0.1W; ±1%; -55÷125°C
Power: 0.1W
Mounting: SMD
Operating temperature: -55...125°C
Max. operating voltage: 75V
Tolerance: ±1%
Resistance: 10Ω
Type of resistor: thin film
Case - mm: 1608
Case - inch: 0603
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10Ω; 0.1W; ±1%; -55÷125°C
Power: 0.1W
Mounting: SMD
Operating temperature: -55...125°C
Max. operating voltage: 75V
Tolerance: ±1%
Resistance: 10Ω
Type of resistor: thin film
Case - mm: 1608
Case - inch: 0603
Produkt ist nicht verfügbar
| IRFR110TRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR110TRLPBF-BE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PTCCL11H251HBE |
|
Hersteller: VISHAY
Category: PTC Thermistors
Description: Fuse: PTC thermistor; 250mA; ceramic; 5mm
Terminal pitch: 5mm
Operating temperature: 0...70°C
Type of fuse: PTC thermistor
Max. voltage: 265V
Switched current: 375mA
Diameter: 10.5mm
Current rating: 0.25A
Kind of fuse: ceramic
Category: PTC Thermistors
Description: Fuse: PTC thermistor; 250mA; ceramic; 5mm
Terminal pitch: 5mm
Operating temperature: 0...70°C
Type of fuse: PTC thermistor
Max. voltage: 265V
Switched current: 375mA
Diameter: 10.5mm
Current rating: 0.25A
Kind of fuse: ceramic
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.44 EUR |
| 62+ | 1.16 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.8 EUR |
| 400+ | 0.77 EUR |
| MAL225953331E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø22x35mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...105°C
Operating voltage: 250V DC
Capacitance: 330µF
Type of capacitor: electrolytic
Body dimensions: Ø22x35mm
Tolerance: ±20%
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 330uF; 250VDC; Ø22x35mm; ±20%
Mounting: SNAP-IN
Operating temperature: -40...105°C
Operating voltage: 250V DC
Capacitance: 330µF
Type of capacitor: electrolytic
Body dimensions: Ø22x35mm
Tolerance: ±20%
Produkt ist nicht verfügbar
| SMM02040C3009FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30Ω; 250mW; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30Ω; 250mW; ±1%; -55÷155°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 30Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| SMM02040D3001BB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 3kΩ; 0.4W; ±0.1%; 25ppm/°C
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 3kΩ
Body dimensions: Ø1.5x3.6mm
Power: 0.4W
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Tolerance: ±0.1%
Type of resistor: thin film
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 3kΩ; 0.4W; ±0.1%; 25ppm/°C
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 3kΩ
Body dimensions: Ø1.5x3.6mm
Power: 0.4W
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Tolerance: ±0.1%
Type of resistor: thin film
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)| SMM02040D3002BB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30kΩ; 0.4W; ±0.1%
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 30kΩ
Body dimensions: Ø1.5x3.6mm
Power: 0.4W
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Tolerance: ±0.1%
Type of resistor: thin film
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 30kΩ; 0.4W; ±0.1%
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 30kΩ
Body dimensions: Ø1.5x3.6mm
Power: 0.4W
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Tolerance: ±0.1%
Type of resistor: thin film
Produkt ist nicht verfügbar
| SMM02040C3300FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 330Ω; 250mW; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 330Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 330Ω; 250mW; ±1%; 50ppm/°C
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 330Ω
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| SMM02040D1300BB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 130Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 130Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0204 MiniMELF; 130Ω; 0.4W; ±0.1%
Type of resistor: thin film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 130Ω
Power: 0.4W
Tolerance: ±0.1%
Max. operating voltage: 200V
Body dimensions: Ø1.5x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 25ppm/°C
Produkt ist nicht verfügbar
| IL410-X016 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 10kV/μs
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 10kV/μs
Produkt ist nicht verfügbar
| IL4118 |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 0.7mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 0.7mA
Mounting: THT
Produkt ist nicht verfügbar
| VJ0805A100JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0805
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Tolerance: ±5%
Operating temperature: -55...125°C
Operating voltage: 50V
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 10pF; 50V; C0G (NP0); ±5%; SMD; 0805
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Tolerance: ±5%
Operating temperature: -55...125°C
Operating voltage: 50V
Type of capacitor: ceramic
Dielectric: C0G (NP0)
Capacitance: 10pF
Kind of capacitor: MLCC
auf Bestellung 6600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2674+ | 0.027 EUR |
| 3876+ | 0.018 EUR |
| 6098+ | 0.012 EUR |
| 6600+ | 0.011 EUR |
| TSOP39436 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 83+ | 0.87 EUR |
| 89+ | 0.8 EUR |
| 94+ | 0.76 EUR |
| 100+ | 0.74 EUR |
| 400+ | 0.73 EUR |
| TSOP53436 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Frequency: 36kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Mounting: THT
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Frequency: 36kHz
Viewing angle: 45°
Type of photoelement: integrated IR receiver
Mounting: THT
Supply voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| TSOP58336 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| TSOP58436 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Produkt ist nicht verfügbar
| TSOP94236 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
| TSOP94336 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
| TSOP94436 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
| TSOP94636 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
| TSOP98236 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2...3.6V
Produkt ist nicht verfügbar
| TSOP98336 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...3.6V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 2.5÷3.6V; 45°
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...3.6V
Produkt ist nicht verfügbar
| P6SMB10A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
| P6SMB10A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
| P6SMB10A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
| P6SMB10A-M3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; unidirectional; ±5%; SMB; reel,tape
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: P6SMB
Leakage current: 10µA
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: unidirectional
Max. off-state voltage: 8.55V
Type of diode: TVS
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Case: SMB
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Produkt ist nicht verfügbar
| P6SMB10CA-E3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB10CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB10CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB10CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 41.4A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6SMB
Produkt ist nicht verfügbar
| P6SMB110A-E3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Produkt ist nicht verfügbar
| P6SMB110A-E3/5B |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Produkt ist nicht verfügbar
| P6SMB110A-M3/52 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 3.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMB
Max. forward impulse current: 3.9A
Breakdown voltage: 110V
Technology: TransZorb®
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Produkt ist nicht verfügbar
| SIHA21N80AEF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 37A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.4A; Idm: 37A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 37A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHB21N80AE-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHG21N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHG21N80AEF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHP21N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHP21N80AEF-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.3A; Idm: 37A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.3A
Pulsed drain current: 37A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHW21N80AE-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; Idm: 38A; 179W; TO247AD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Pulsed drain current: 38A
Power dissipation: 179W
Case: TO247AD
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| CRCW0805348KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 348kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 348kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 348kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| LVB1560-M3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A
Max. off-state voltage: 0.6kV
Load current: 15A
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: GSIB-5S
Max. forward voltage: 0.9V
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 400A
Max. off-state voltage: 0.6kV
Load current: 15A
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: GSIB-5S
Max. forward voltage: 0.9V
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: flat pin
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.28 EUR |
| 17+ | 4.32 EUR |
| 18+ | 4.08 EUR |
| IRFPC50LCPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR020TRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 56A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9020PBF | |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9020TRLPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR9020TRPBF |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -9.9A; Idm: -40A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -9.9A
Pulsed drain current: -40A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar