SUM50010E-GE3 Vishay Semiconductors
auf Bestellung 2202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.77 EUR |
| 10+ | 4.86 EUR |
| 25+ | 4.79 EUR |
| 100+ | 3.94 EUR |
| 250+ | 3.87 EUR |
| 500+ | 3.5 EUR |
| 800+ | 2.83 EUR |
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Technische Details SUM50010E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 150A TO263, Packaging: Strip, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V.
Weitere Produktangebote SUM50010E-GE3 nach Preis ab 3.52 EUR bis 5.83 EUR
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SUM50010E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 150A TO263Packaging: Strip Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V |
auf Bestellung 892 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM50010E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 150A 3-Pin(2+Tab) D2PAK |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| SUM50010E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| SUM50010E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |