![IRFR110TRLPBF IRFR110TRLPBF](https://www.mouser.com/images/mouserelectronics/lrg/TO_252_AA_3_ITP_t.jpg)
auf Bestellung 2059 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.51 EUR |
10+ | 1.32 EUR |
100+ | 0.9 EUR |
500+ | 0.77 EUR |
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Technische Details IRFR110TRLPBF Vishay Semiconductors
Description: MOSFET N-CH 100V 4.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRFR110TRLPBF nach Preis ab 0.95 EUR bis 2.16 EUR
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IRFR110TRLPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR110TRLPBF | Hersteller : Vishay |
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IRFR110TRLPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFR110TRLPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFR110TRLPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Drain-source voltage: 100V Drain current: 4.3A On-state resistance: 0.54Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Mounting: SMD Case: DPAK; TO252 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRFR110TRLPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR110TRLPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Drain-source voltage: 100V Drain current: 4.3A On-state resistance: 0.54Ω Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 17A Mounting: SMD Case: DPAK; TO252 |
Produkt ist nicht verfügbar |